Low-Complexity Optimization Algorithm for Irregular Low-Density Parity-Check Codes

A low-complexity algorithm is proposed in this paper in order to optimize irregular low-density parity-check （LDPC） codes.The algorithm proposed can calculate the noise threshold by means of a one-dimensional density evolution and search the optimal degree profiles with fast-convergence differential evolution,so that it has a lower complexity and a faster convergence speed.Simulation resuits show that the irregular LDPC codes optimized by the presented algorithm can also perform better than Turbo codes at moderate block length even with less computation cost.

A novel OCDMA drop unit based on fiber gratings and 2D wavelength-time codes

A novel drop unit for the optical code-division multiple access(OCDMA) based on fiber Bragg gratings and two-dimensional wavelength-time code is studied.The simple OCDMA drop unit can drop a code channel without disturbing the rest code channels.A similar unit for dropping a group of code channels is also proposed.Numerical simulation is given.The system delay can decrease by substituting the electrieal driving optical switch with a specific optical driving.The single channel drop unit can also be the basis for multiple channels drop.

Efficient Early Termination Strategy for LDPC Codes in GPS Systems

By exploiting the structural features of L1C messages,a novel Early Termination( ET) strategy is proposed to speed up the decoding of low-density parity-check( LDPC) codes in the GPS system. The proposed strategy is based on the cyclic redundancy check( CRC) of the messages in the subframes 2 and 3. The simulation results show that average number of iterations of the proposed strategy is less than that of the standard ET strategy,with nearly no degradation in decoding performance. Besides,the proposed ET strategy can be efficiently implemented in a sequential or parallel manner. Thus,the proposed ET strategy is attractive for practical purposes.

Optical and Electrical Properties of Sensitized Polyaniline by Electrochemical Polymerization

To sensitize polyaniline with dyes by electrochemical polymerization, HClO 4 is employed as the dopant and oxidant, and the polyaniline with different sensitive properties is synthesized. The effect of sensitized emeraldine salt on the absorption spectrum is discussed in details. The maximum conductivity of sensitized films reaches 1.22 S/cm, and investigation on dye sensitizing of the polymer reveals that C.I. Direct Blue 71, C.I. Direct Blue 84, C.I. Direct Black 19 and CuPc-(COOH) 4 may enhance the photoconductivity of polyaniline greatly.

Influence on Conductivity of Polyparaphenylene by Chemical Doping and Ion Implantation

Polyparaphenylene(PPP) is prepared by AlCl 3-CuCl 2 catalysts with benzene as the monomer and is doped by chemical method and N + ion implantation. The influences of the concentration, temperature and time of chemical doping and the dose, energy and temperature of ion implantation, on PPP conductivity are investigated. The results showed that the conductivity of PPP can be improved 4～5 orders of magnitude by ion implantation and the conductivity of PPP can reach about 0.11 S·cm -1 by chemical doping. The comparison of stability of the material conductive behavior by using the two doping methods is presented. It shows that ion implantation is better than chemical doping in stabilizing the electric conductive behavior for the material.

Photoelectric Property of Polyaniline Doped with Organic Sulphonic Acid

Photoelectric property of polyaniline doped with dodecyl-benzene sulphonic acid (DBSA) is studied. The result shows that the concentration of carrier increases obviously, when polyaniline doped with DBSA is irradiated with light. Mixture of sensitive material is advantageous to the absorption of polyaniline in visible light spectrum, and the conductivity is also improved. The results of dielectric measurements on polyaniline doped with DBSA in an Al-PAn-DBSA-Al configuration as function of frequency and temperature are reported. The space-charge polarization phenomenon is observed. Carrier lifetime is microsecond magnitude and mobility is (0.001～0.1) cm 2/V·s, which are obtained by calculation or experiment. The active energy is obtained from the relation between conductivity and temperature. The conducting mechanism of PAn-DBSA is analyzed.

Optical Fiber Displacement Sensor with Ultra-high Resolution

A low fineness fiber optic Fabry-Perot interferometric displacement sensor has been developed and tested.A 0.005 nm displacement resolution is obtained by using He-Ne laser with a high performance ,photodetectors with low noise ,low drift operational amplifiers,6-pole Butterworth filters and perfect digital signal processing circuits.

Kravchenko probabilityweight functions in problems of radar signals correlation processing

In this report the combined method of correlation radar signal(RS)processing based on the theory of atomic functions(AF)is examined.Examples of using of new Kravchenko probability weight functions(WF)designs are presented.Quality functional to estimate accuracy and efficiency of RS processing for concrete physical models is constructed.It is shown that the proposed approach significantly improves the quality of the coherent analysis of RS.

Comparison of Ge_xSi_(1- x) Grown by UHV/CVD from Si_2H_6/GeH_4 and SiH_4/GeH_4

Using double crystal X-rays diffraction (DCXRD) and atomic force microscopy (AFM), the results of Ge x Si 1- x grown by UHV/CVD from Si 2H 6 and SiH 4 are analyzed and compared. Adsorbates can migrate to the energy-favoring position due to the slow growth rate from SiH 4. In this case, a Si buffer that isolates the effect of substrate on epilayer could not be grown, which results in a pit penetrating into epilayer and buffer. The FWHM is 0.055° in DCXRD from SiH 4. The presence of diffraction fringes is an indication of an excellent crystalline quality. The roughness of the surface is improved if grown by Si 2H 6; however, the crystal quality of the Ge x Si 1- x material became worse than that from SiH 4 due to much larger growth rate from Si 2H 6. The content of Ge is obtained from DCXRD, which indicates the growth rate from Si 2H 6 is largest, then GeH 4, and that from SiH 4 is least.

A new algorithm for wireless sensor network based on NS-2

Considering wireless sensor network characteristics,this paper uses network simulator,version2(NS-2)algorithm to improve Ad hoc on-demand distance vector(AODV)routing algorithm,so that it can be applied to wireless sensor networks.After studying AODV routing protocol,a new algorithm called Must is brought up.This paper introduces the background and algorithm theory of Must,and discusses the details about how to implement Must algorithm.At last,using network simulator(NS-2),the performance of Must is evaluated and compared with that of AODV.Simulation results show that the network using Must algorithm has perfect performance.

AltBOC navigation signal quality assessment and measurement

In order to ensure that Chinese BeiDou satellite navigation system runs smoothly,the assessment of signal quality has become a significant task.Alternative binary offset carrier(AltBOC)is BeiDou B2 frequency signal.The acquisition of BeiDou signal is processed in off-line mode and the evaluation is performed by taking signal power spectrum,eye diagram,constellation,correlation,loss and s-curve deviation on AltBOC as signal quality evaluation parameters.The results illustrate that the new system signal,namely AltBOC signal,has the best performance in code tracking precision,anti-jamming and anti-multipath.

Wireless sensor network based on CC2530

This paper designs a wireless sensor network based on CC2530.The sensor nodes consist of multi-ranged accelerometer and CC2530,covering all the ranges of the acceleration signals which can be measured.The designed system solves the problems such as cable installation trouble of testing system,vulnerability to interference and complexity of circuit.Test results show that the designed wireless sensor network can transmit the signals that multi-ranged micro-accelerometer emits without spoilage,thus the measurement of acceleration of the covering region is completed.

Enhanced Efficiency and Durability of Organic Electroluminescent Devices by Doping in Emitting Layer

Remarkable improvement in efficiency and stability has been observed in a doped organic electroluminescence device, which consists of a hole-transport layer, an electron-transport layer and a luminescent layer. The hole-transport layer is a N,N’-bis(3-methyphenyl)-N,N’-diphenylbenzidine film. The doped emitting layer consists of 8-(quinolinolate)-aluminum as the host and rubrene as the emission dopant. The doped device demonstrated a brightness in excess of 40 000 cd/m 2 and the maximum external quantum efficiency of 3.4%, which is about six times and four times respectively greater than those of the undoped device. For no packaged deviced, a luminance half-life on the order of about 230 h has been achieved under a constant current density of 15 mA/cm 2, starting at 500 cd/m 2 at the room temperature.

Efficient Organic Multi-quantum Well Electroluminescent Devices Using Aluminum as Cathodes

Organic green light emitting devices(LEDs) with multi-quantum well(MQW) structure were fabricated. Aromatic diamine(TPD) was used as hole-transporting layer and potential barrier layer; Tris(8-hydroxyquinoline) aluminum(Alq 3) was acted as electron-transporting emitter and MQW green emitter. Air-stable aluminum(Al) was used as electron-injection contact. The influence of the thickness of potential barrier layer and the number of quantum well on the electroluminescent(EL) efficiencies of the devices was investigated. The organic LEDs with two quantum wells showed enhanced EL efficiencies. Maximum external quantum efficiency and brightness were 1.04 % and 7 000 cd/m 2, respectively.

Preparation , Structure and DC Conductivity of Organic Semiconductor PA NI-C_4H_6O_6

A new organic semiconductor tartaric acid doped salt of emeraldine polyaniline (PANI-C 4H 6O 6) has been obtained by the method of oxidative polymerization of monomeric aniline with ammonium persulfate in acidic solution. The structure was characterized by Fourier Transform Infrared technique (FTIR) and X-ray diffraction (XRD). The temperature dependence dc conductivity δ dc ( T ) shows a semiconductor behavior and follows the quasi one dimensional variable range hopping (Q1D-VRH) model. Data on δ dc ( T ) are also discussed.

Low Distortion 1.31μm AlGaInAs/InP MQW DFB Laser Module for CATV Systems

A high power and low distortion 1.31 μm AlGaInAs/InP multiquantum well distributed feedback laser diode (MQW DFB LD) with RWG structure has been developed by MOCVD technique. The fiber output power of butterfly packaged module with optic isolator P f is more than 10 mW, threshold current is in the range of (13～20) mA, slope efficiency, E s>0.30 W/A and side mode suppression ratio, R S,M,S >35 dB. The composite second order, O C,S <-61 dBc and composite triple beat, B C,T <-65 dBc are obtained by test frequencies of (45～550) MHz with 60 PAL channels. In the test conditions the carrier to noise ratio, R C,N >51 dB.

Charged Centers in ZnS- type Thin Film Electroluminescent Devices

Charged centers exist in the phosphor layer of the common thin film electroluminescent devices. In this article, electron scattering process due to these centers is studied through phase shift analysis. The scattering rates in different cases are obtained and compared with other important scattering processes. Electron transport processed under different charged centers conditions are simulated by means of Monte Carlo method. The quantitative results about the influence of charged centers on electron energy are obtained.

Spectral Properties of Yellow Fluorescent Powder for White LEDs

Much attention has been paid to white LEDs because of their potential applications in the illumination.The doping of rare earth ions plays an important role in the optical properties of yellow fluorescent powder.And mainly aiming to raise the intensity and the luminous rate of the white LEDs and by photoluminescence and electroluminescence,the luminescence spectrum of yellow fluorescent powder bought from different places is measured.Furthermore, the luminous intensity in the normal direction and the angle distribution of half maximum power for the white LEDs packed with cylindrical Φ 5 epoxy on the same blue GaN chips are also measured under the same manufacture conditions. The results show that the yellow fluorescent powder bought from China mainland has higher optical output rate than that bought from China Taiwan and hence is more suitable to fabricate the white LEDs for practical use.

Effects of Substrate Pretreatment Conditions on Quality of GaN Epilayer

The pure cubic GaN(c-GaN) has been grown on (001)GaAs substrates by ECR-PAMOCVD technique at low temperature using TMGa and high pure N2 as Ga and N sources, respectively. The effects of substrate pretreatment conditions on quality of cubic GaN epilayer are investigated by the measurements of TEM and XRD.It is found that hydrogen plasma cleaning, nitridation and buffer layer growth are very important for quality of cubic GaN epilayer.

Deposition of Silicon Nitride Films by Silane Hydrazine Process

A new catalytic chemical vapor process for depositing silicon nitride films using silane hydrazine gaseous mixture is described. This system can be useful at a temperature of lower than 400 ℃. The catalytic process gives more rapid deposition rate than 10 nm/min. The atomic composition ratio, N/Si, which is evaluated by Rutherfold backscattering method is about 1.4 under a given experimental conditions more than the stoichiometric value of 1.33 in Si 3N 4. The infrared transmission spectra show a large dip at 850 cm -1 due to Si-N bonds and no clear dip due to Si-O bonds. High N-H bond density is the evidence that the deposition mechanism is limited by N-N bond breaking of the hydrazine. The H contents, evaluated from Si-H and N-H bonds in the infrared absorption spectra, and the deposition rate are measured as a function of the substrate temperature. In addition some film properties such as the resistivity and the breakdown electric field are presented.