A RTD-based TSRAM cell is introduced.The mechanism of different types of access transistors in this cell is described and NMOS is found most suitable from consideration of the cell size and power consumption.The archi...A RTD-based TSRAM cell is introduced.The mechanism of different types of access transistors in this cell is described and NMOS is found most suitable from consideration of the cell size and power consumption.The architecture of a TSRAM system is presented.Simulation results show that the RTD-based TSRAM has advanced characteristics of small area,low power,and high speed.展开更多
文摘A RTD-based TSRAM cell is introduced.The mechanism of different types of access transistors in this cell is described and NMOS is found most suitable from consideration of the cell size and power consumption.The architecture of a TSRAM system is presented.Simulation results show that the RTD-based TSRAM has advanced characteristics of small area,low power,and high speed.
