A program of adaptive quadrature demodulation is proposed to supply the gaps in the traditional analog detection technology of a silicon micro-machined gyroscope (SMG). This program is suitable for digital phase locke...A program of adaptive quadrature demodulation is proposed to supply the gaps in the traditional analog detection technology of a silicon micro-machined gyroscope (SMG). This program is suitable for digital phase locked loop (DPLL) drive technology that proposed in other papers. In addition the program adopts an adaptive filtering algorithm, which selects the in-phase and quadrature components that are outputs of the DPLL of the SMG's drive mode as reference signals to update the amplitude of the in-phase and quadrature components of the input signal by iteratively. An objective of the program is to minimize the mean square error of the accurate amplitudes and the estimated amplitudes of SMG's detection mode. The simulation and test results prove the feasibility of the program that lays the foundation for the further improvement of the SMG's system performance and the implementation of the SMG system's self-calibration and self-demarcation in future.展开更多
This paper mainly describes a research of fabrication-technology of silicon magnetic-sensitive transistor (SMST) with rectangle-plank-cubic structure fabricated on silicon wafer by MEMS technique.An experiment researc...This paper mainly describes a research of fabrication-technology of silicon magnetic-sensitive transistor (SMST) with rectangle-plank-cubic structure fabricated on silicon wafer by MEMS technique.An experiment research on basic characteristic of the silicon magnetic-sensitive transistor was done.Anisotropic etching and reliable technique project were provided and applied in order to fabricate SMST with rectangle-plank-cubic construction.This means that a new kind of fabrication technology for silicon magnetic-sensitive transistor was provided.The result shows that the technique can be not only compatible with IC technology but also integrated easily,and has a wide application field.展开更多
The influence of silicon slice flatness on bonding technology and the relation between a foreign particle and resulting bubble are quantitatively presented by the elastic theory. It is demonstrated experimentally by X...The influence of silicon slice flatness on bonding technology and the relation between a foreign particle and resulting bubble are quantitatively presented by the elastic theory. It is demonstrated experimentally by X-ray double crystal diffractometry and infrared imager.展开更多
A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit ...A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.展开更多
The wedge-shaped and leaf-type silicon light-emitting devices(LED)are designed and fabricated with the Singapore Chartered Semi Inc.'s dual-gate standard 0.35μm CMOS process.The basic structure of the two devices...The wedge-shaped and leaf-type silicon light-emitting devices(LED)are designed and fabricated with the Singapore Chartered Semi Inc.'s dual-gate standard 0.35μm CMOS process.The basic structure of the two devices is N well-P+ junction.P+ area is the wedge-shaped structure,which is embedded in N well.The leaf-type silicon LED device is a combination of the three wedge-shaped LED devices.The main difference between the two devices is their different electrode distribution,which is mainly in order to analyze the application of electric field confinement(EFC).The devices' micrographs were measured with the Olympus IC test microscope.The forward and reverse bias electrical characteristics of the devices were tested.Light measurements of the devices show that the electrode layout is very important when the electric field confinement is applied.展开更多
A single mode hybrid Ⅲ-Ⅴ/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP...A single mode hybrid Ⅲ-Ⅴ/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AIGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Then, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. The single mode laser is flip-chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3roW, and the threshold is 37mA at room temperature and continuous wave operation.展开更多
文摘A program of adaptive quadrature demodulation is proposed to supply the gaps in the traditional analog detection technology of a silicon micro-machined gyroscope (SMG). This program is suitable for digital phase locked loop (DPLL) drive technology that proposed in other papers. In addition the program adopts an adaptive filtering algorithm, which selects the in-phase and quadrature components that are outputs of the DPLL of the SMG's drive mode as reference signals to update the amplitude of the in-phase and quadrature components of the input signal by iteratively. An objective of the program is to minimize the mean square error of the accurate amplitudes and the estimated amplitudes of SMG's detection mode. The simulation and test results prove the feasibility of the program that lays the foundation for the further improvement of the SMG's system performance and the implementation of the SMG system's self-calibration and self-demarcation in future.
文摘This paper mainly describes a research of fabrication-technology of silicon magnetic-sensitive transistor (SMST) with rectangle-plank-cubic structure fabricated on silicon wafer by MEMS technique.An experiment research on basic characteristic of the silicon magnetic-sensitive transistor was done.Anisotropic etching and reliable technique project were provided and applied in order to fabricate SMST with rectangle-plank-cubic construction.This means that a new kind of fabrication technology for silicon magnetic-sensitive transistor was provided.The result shows that the technique can be not only compatible with IC technology but also integrated easily,and has a wide application field.
文摘The influence of silicon slice flatness on bonding technology and the relation between a foreign particle and resulting bubble are quantitatively presented by the elastic theory. It is demonstrated experimentally by X-ray double crystal diffractometry and infrared imager.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60536030,61036002,60776024,60877035 and 61036009)National High Technology Research and Development Program of China(Grant Nos.2007AA04Z329 and 2007AA04Z254)
文摘A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.
基金National Natural Science Foundation Subject(60536030,60676038)Tianjin Key Basic Research Project(06YFJZJC00200)
文摘The wedge-shaped and leaf-type silicon light-emitting devices(LED)are designed and fabricated with the Singapore Chartered Semi Inc.'s dual-gate standard 0.35μm CMOS process.The basic structure of the two devices is N well-P+ junction.P+ area is the wedge-shaped structure,which is embedded in N well.The leaf-type silicon LED device is a combination of the three wedge-shaped LED devices.The main difference between the two devices is their different electrode distribution,which is mainly in order to analyze the application of electric field confinement(EFC).The devices' micrographs were measured with the Olympus IC test microscope.The forward and reverse bias electrical characteristics of the devices were tested.Light measurements of the devices show that the electrode layout is very important when the electric field confinement is applied.
基金Supported by the National Basic Research Program of China under Grant No 2012CB933501the National Natural Science Foundation of China under Grant Nos 61307033,61274070,61137003 and 61321063
文摘A single mode hybrid Ⅲ-Ⅴ/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry-Perot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AIGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Then, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. The single mode laser is flip-chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3roW, and the threshold is 37mA at room temperature and continuous wave operation.
