Service life of two different oxide anodes in phenolsulfonic acid (PSA) solution was investigated by accelerated electrolysis. The durability of Ti/IrO_2+Ta_2 O_5 anode increased by the addition of SnO_2 in the mixed...Service life of two different oxide anodes in phenolsulfonic acid (PSA) solution was investigated by accelerated electrolysis. The durability of Ti/IrO_2+Ta_2 O_5 anode increased by the addition of SnO_2 in the mixed oxides. The degradation mechanisms of Ti/IrO_2+ Ta_2 O_5 and Ti/IrO_2 +Ta_2 O_5 +SnO+2 anodes were different. It was shown from the observation of scanning electron microscopy (SEM) and the electrochcmical measurement that, the deactivation of Ti/IrO_2 + Ta_2 O_5 anode was due to the build-up of an organic film on surface. The growth of the covered film on surface was restricted by addition of SnO_2, which resulted in increasing of the service life of anodes. The over-potential for oxygen evolution on Ti/IrO_2 +Ta_2 O_5 electrode increased after doping SnO_2, and the intermediate products of PSA building-up on the surface was much more rapidly oxidized. Meanwhile, a certain part of the surface oxide deposit entered into the solution leading to loss of oxides, which resulted in degradation of Ti/IroO_2 + Ta_2 O_5 anode containing SnO_2 component.展开更多
Pt/ZrO_(2)catalysts promoted with MoO_(3)and Nb_(2)O_(5)were tested for the combustion of short-chain alkanes(namely,methane,ethane,propane,and n-hexane).For short-chain alkane combustion,the inhibition of MoO_(3)(for...Pt/ZrO_(2)catalysts promoted with MoO_(3)and Nb_(2)O_(5)were tested for the combustion of short-chain alkanes(namely,methane,ethane,propane,and n-hexane).For short-chain alkane combustion,the inhibition of MoO_(3)(for the methane reaction)dramatically transformed to promotion(for the ethane,propane,and n-hexane reactions)as the carbon chain length increased,whereas the remarkable promotion of Nb_(2)O_(5)gradually weakened with an increase in the carbon chain length.Based on a detailed study of the oxidation reactions of methane and propane over the catalysts,the different roles of the promoters in the reactions were ascribed to differences in the acidic properties of the surface and the oxidation or reduction states of the Pt species.The MoO_(3)promoter could decorate the surface of the Pt species for a Pt-Mo/ZrO_(2)catalyst,whereas the Nb_(2)O_(5)promoter on the support could be partially covered by Pt particles for a Pt-Nb/ZrO_(2)catalyst.The formation of accessible Pt-MoO_(3)interfacial sites,a high concentration of metallic Pt species,and a high surface acidity in Pt-Mo/ZrO_(2)were responsible for the enhanced activity for catalytic propane combustion.The lack of enough accessible Pt-Nb_(2)O_(5)interfacial sites but an enhanced surface acid sites in Pt-Nb/ZrO_(2)explained the slight improvement in activity for catalytic propane combustion.However,the stabilized Pt^(n+)species in Pt-Nb/ZrO_(2)were responsible for the much-improved activity for methane combustion,whereas the Pt^(n+)species in Pt-Mo/ZrO_(2)could be reduced during the oxidation reaction,and the fewer exposed surface Pt species because of MoO_(3)decoration accounted for the inhibited activity for methane combustion.In addition,it can be concluded that MoO_(3)promotion is favorable for the activation of C-C bonds,whereas Nb_(2)O_(5)promotion is more beneficial for the activation of C-H bonds with high energy.展开更多
The multilevel storage capability of nonvolatile resistive random access memory(ReRAM)is greatly de-sired to accomplish high functioning memory density.In this study,Ta_(2)O_(5) thin film with different thick-nesses(2...The multilevel storage capability of nonvolatile resistive random access memory(ReRAM)is greatly de-sired to accomplish high functioning memory density.In this study,Ta_(2)O_(5) thin film with different thick-nesses(2,4,and 6 nm)was exploited as an appropriate interfacial barrier layer for limiting the formation of the interfacial layer between the 10 nm thick sputtering deposited resistive switching(RS)layer and Ta ohmic electrode to improve the switching cycle endurance and uniformity.Results show that lower form-ing voltage,narrow distribution of SET-voltages,good dc switching cycles(10^(3)),high pulse endurance(10^(6) cycles),long retention time(10^(4) s at room temperature and 100℃),and reliable multilevel resis-tance states were obtained at an appropriate thickness of∼2 nm Ta_(2)O_(5) interfacial barrier layer instead of without Ta_(2)O_(5) and with∼4 nm,and∼6 nm Ta_(2)O_(5) barrier layer,ZrO_(2)-based memristive devices.Besides,multilevel resistance states have been scientifically investigated via modulating the compliance current(CC)and RESET-stop voltages,which displays that all of the resistance states were distinct and stayed stable without any considerable deprivation over 10^(4) s retention time and 104 pulse endurance cycles.The I-V characteristics of RESET-stop voltage(from−1.7 to−2.3 V)of HRS are found to be a good linear fit with the Schottky equation.It can be seen that Schottky barrier height rises by increasing the stop-voltage during RESET-operation,resulting in enhancing the data storage memory window(on/offratio).Moreover,RESET-voltage and CC control of HRS and LRS revealed the physical origin of the RS mecha-nism,which entails the formation and rupture of conducting nanofilaments.It is thoroughly investigated that proper optimization of the barrier layer at the ohmic interface and the switching layer is essential in memristive devices.These results demonstrate that the ZrO_(2)-based memristive device with an optimized∼2 nm Ta_(2)O_(5) barrier layer is a promising candidate for multilevel data storage memory applications.展开更多
文摘Service life of two different oxide anodes in phenolsulfonic acid (PSA) solution was investigated by accelerated electrolysis. The durability of Ti/IrO_2+Ta_2 O_5 anode increased by the addition of SnO_2 in the mixed oxides. The degradation mechanisms of Ti/IrO_2+ Ta_2 O_5 and Ti/IrO_2 +Ta_2 O_5 +SnO+2 anodes were different. It was shown from the observation of scanning electron microscopy (SEM) and the electrochcmical measurement that, the deactivation of Ti/IrO_2 + Ta_2 O_5 anode was due to the build-up of an organic film on surface. The growth of the covered film on surface was restricted by addition of SnO_2, which resulted in increasing of the service life of anodes. The over-potential for oxygen evolution on Ti/IrO_2 +Ta_2 O_5 electrode increased after doping SnO_2, and the intermediate products of PSA building-up on the surface was much more rapidly oxidized. Meanwhile, a certain part of the surface oxide deposit entered into the solution leading to loss of oxides, which resulted in degradation of Ti/IroO_2 + Ta_2 O_5 anode containing SnO_2 component.
文摘Pt/ZrO_(2)catalysts promoted with MoO_(3)and Nb_(2)O_(5)were tested for the combustion of short-chain alkanes(namely,methane,ethane,propane,and n-hexane).For short-chain alkane combustion,the inhibition of MoO_(3)(for the methane reaction)dramatically transformed to promotion(for the ethane,propane,and n-hexane reactions)as the carbon chain length increased,whereas the remarkable promotion of Nb_(2)O_(5)gradually weakened with an increase in the carbon chain length.Based on a detailed study of the oxidation reactions of methane and propane over the catalysts,the different roles of the promoters in the reactions were ascribed to differences in the acidic properties of the surface and the oxidation or reduction states of the Pt species.The MoO_(3)promoter could decorate the surface of the Pt species for a Pt-Mo/ZrO_(2)catalyst,whereas the Nb_(2)O_(5)promoter on the support could be partially covered by Pt particles for a Pt-Nb/ZrO_(2)catalyst.The formation of accessible Pt-MoO_(3)interfacial sites,a high concentration of metallic Pt species,and a high surface acidity in Pt-Mo/ZrO_(2)were responsible for the enhanced activity for catalytic propane combustion.The lack of enough accessible Pt-Nb_(2)O_(5)interfacial sites but an enhanced surface acid sites in Pt-Nb/ZrO_(2)explained the slight improvement in activity for catalytic propane combustion.However,the stabilized Pt^(n+)species in Pt-Nb/ZrO_(2)were responsible for the much-improved activity for methane combustion,whereas the Pt^(n+)species in Pt-Mo/ZrO_(2)could be reduced during the oxidation reaction,and the fewer exposed surface Pt species because of MoO_(3)decoration accounted for the inhibited activity for methane combustion.In addition,it can be concluded that MoO_(3)promotion is favorable for the activation of C-C bonds,whereas Nb_(2)O_(5)promotion is more beneficial for the activation of C-H bonds with high energy.
基金supported in part by the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIP) (No.2021R1C1C1004422)the Dongguk University Research Fund of 2020supported through the National Research Foundation of Korea (NRF) funded by the Ministry of Science,ICT & Future Planning (Nos.NRF2020M3F3A2A02082449 and NRF-2016R1A6A1A03013422)。
文摘The multilevel storage capability of nonvolatile resistive random access memory(ReRAM)is greatly de-sired to accomplish high functioning memory density.In this study,Ta_(2)O_(5) thin film with different thick-nesses(2,4,and 6 nm)was exploited as an appropriate interfacial barrier layer for limiting the formation of the interfacial layer between the 10 nm thick sputtering deposited resistive switching(RS)layer and Ta ohmic electrode to improve the switching cycle endurance and uniformity.Results show that lower form-ing voltage,narrow distribution of SET-voltages,good dc switching cycles(10^(3)),high pulse endurance(10^(6) cycles),long retention time(10^(4) s at room temperature and 100℃),and reliable multilevel resis-tance states were obtained at an appropriate thickness of∼2 nm Ta_(2)O_(5) interfacial barrier layer instead of without Ta_(2)O_(5) and with∼4 nm,and∼6 nm Ta_(2)O_(5) barrier layer,ZrO_(2)-based memristive devices.Besides,multilevel resistance states have been scientifically investigated via modulating the compliance current(CC)and RESET-stop voltages,which displays that all of the resistance states were distinct and stayed stable without any considerable deprivation over 10^(4) s retention time and 104 pulse endurance cycles.The I-V characteristics of RESET-stop voltage(from−1.7 to−2.3 V)of HRS are found to be a good linear fit with the Schottky equation.It can be seen that Schottky barrier height rises by increasing the stop-voltage during RESET-operation,resulting in enhancing the data storage memory window(on/offratio).Moreover,RESET-voltage and CC control of HRS and LRS revealed the physical origin of the RS mecha-nism,which entails the formation and rupture of conducting nanofilaments.It is thoroughly investigated that proper optimization of the barrier layer at the ohmic interface and the switching layer is essential in memristive devices.These results demonstrate that the ZrO_(2)-based memristive device with an optimized∼2 nm Ta_(2)O_(5) barrier layer is a promising candidate for multilevel data storage memory applications.
