We obtain molybdenum disulfide （MoS2） nanosheets （NSs） with edge sizes of 18μm by direct sulfuration of MoO3 powder spread on the SiO2/Si substrates. However, the undesirable MoO3 nanoparticles （NPs） left on th...We obtain molybdenum disulfide （MoS2） nanosheets （NSs） with edge sizes of 18μm by direct sulfuration of MoO3 powder spread on the SiO2/Si substrates. However, the undesirable MoO3 nanoparticles （NPs） left on the surface of MoS22 NSs poison the MoO3 precursor. Introducing Te vapors to react with MoS2 to form low melting point intermediate MoSxTe2-x, the evaporations of MoO3 precursor recover and MoO3 NPs disappear. Thus Te vapor is effective to suppress poisoning of the MoO3 precursor. Selecting the appropriate amount of Te vapor, we fabricate monolayer MoS22 NSs up to 70μm in edge length. This finding can be significant to understand the role of Te in the Te-assisted chemical vapor deposition growth process of layered chalcogenide materials.展开更多
基金Supported by the Fundamental Research Funds for the Central Universitiesthe Research Funds of Renmin University of China under Grant No 14XNLQ07
文摘We obtain molybdenum disulfide （MoS2） nanosheets （NSs） with edge sizes of 18μm by direct sulfuration of MoO3 powder spread on the SiO2/Si substrates. However, the undesirable MoO3 nanoparticles （NPs） left on the surface of MoS22 NSs poison the MoO3 precursor. Introducing Te vapors to react with MoS2 to form low melting point intermediate MoSxTe2-x, the evaporations of MoO3 precursor recover and MoO3 NPs disappear. Thus Te vapor is effective to suppress poisoning of the MoO3 precursor. Selecting the appropriate amount of Te vapor, we fabricate monolayer MoS22 NSs up to 70μm in edge length. This finding can be significant to understand the role of Te in the Te-assisted chemical vapor deposition growth process of layered chalcogenide materials.
