期刊文献+

二次检索

题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息
共找到6篇文章
< 1 >
每页显示 20 50 100
The Influence of Temperature on Ethene Diffusion in HZSM-5 Studied by Molecular Dynamics
1
作者 FAN Jian fen XIA Qi ying +1 位作者 GONG Xue dong XIAO He ming 《Chemical Research in Chinese Universities》 SCIE CAS CSCD 2002年第3期321-324,共4页
Molecular dynamics(MD) simulation of ethene diffusion in the lattice of HZSM 5 was performed at the temperature ranging from 300 K to 700 K. The calculated diffusion coefficients increase with the temperature from 2.6... Molecular dynamics(MD) simulation of ethene diffusion in the lattice of HZSM 5 was performed at the temperature ranging from 300 K to 700 K. The calculated diffusion coefficients increase with the temperature from 2.60×10 -9 m 2/s at 300 K to 12.78×10 -9 m 2/s at 700 K. The Arrhenius plot gives an activation energy of 6.31 kJ/mol . The anisotropy of the diffusion process was examined. 展开更多
关键词 MD simulation Ethene diffusion H[Al]ZSM-5 influence of temperature
下载PDF
Influence of Temperature on Nitrogen Ion Implantation of Ti6Al4V Alloy
2
作者 赵青 郑永真 +3 位作者 莫志涛 唐德礼 童洪辉 耿漫 《Plasma Science and Technology》 SCIE EI CAS CSCD 2001年第2期721-726,共6页
in order to achieve increased layer thickness, and wearing resistance, enhanced ion implantation with nitrogen has been carried out at temperatures of 100, 200, 400, and 600℃ with a dose of 4x 1018 ions' cm-2. U... in order to achieve increased layer thickness, and wearing resistance, enhanced ion implantation with nitrogen has been carried out at temperatures of 100, 200, 400, and 600℃ with a dose of 4x 1018 ions' cm-2. Using the Plasma Source ion Implantation (PSII) device, specimens of Ti6Al4V alloy were implanted at elevated temperatures, using the ion flux as the heating source. Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), micro-hardness measurements and pin-on-disk wearing tester were utilized to evaluate the surface property improvements. The thickness of the implanted layer increased by about an order of magnitude when the temperature was elevated from 100 to 600℃. Higher surface hardness and wearing resistance was also obtained in implantation under higher temperature. XRD image showed the presence of titanium nitrides on the implanted surface. 展开更多
关键词 TIN influence of temperature on Nitrogen Ion Implantation of Ti6Al4V Alloy
下载PDF
Investigation of Temperature Dependency of Morphological Properties of Thermoplastic Polyurethane using WAXS and SAXS Monitoring 被引量:1
3
作者 Steffen Thomas Witzleben Katharina Walbrueck +1 位作者 Stephanie Elisabeth Klein Margit Schulze 《Journal of Chemistry and Chemical Engineering》 2015年第8期494-499,共6页
Polyether and polyether/ester based TPU (thermoplastic polyurethanes) were investigated with wide-angle XRD (X-ray diffraction) and SAXS (small angle X-ray scattering). Furthermore, SAXS measurements were perfor... Polyether and polyether/ester based TPU (thermoplastic polyurethanes) were investigated with wide-angle XRD (X-ray diffraction) and SAXS (small angle X-ray scattering). Furthermore, SAXS measurements were performed in the temperature range of 30 ℃ to 130 ℃. Polyether based polymers exhibit only one broad diffraction signal in a region of 2 θ 15° to 25°. In case of polyurethanes with ether/ester modification, the broad diffraction signal arises with small sharp diffraction signals. SAXS measurements of polymers reveal the size and shape of the crystalline zones of the polymer. Between 30 ℃ and 130 ℃ the size of the crystalline zone changes significantly. The size decreases in most of investigated TPU. In the case of Desmopan 9365D an increase of the particle size was observed. 展开更多
关键词 Thermoplastic polyurethanes MORPHOLOGY mechanical properties SAXS WAXS temperature influence CRYSTALLINITY
下载PDF
DYNAMICAL FORMATION OF CAVITY FOR COMPOSED THERMAL HYPERELASTIC SPHERES IN NONUNIFORM TEMPERATURE FIELDS
4
作者 程昌钧 梅波 《Applied Mathematics and Mechanics(English Edition)》 SCIE EI 2006年第4期443-452,共10页
Dynamical formation and growth of compressible thermal-hyperelastic Gent-Thomas cavity in a sphere composed of two inmaterials were discussed under the case of a non-uniform temperature field and the surface dead load... Dynamical formation and growth of compressible thermal-hyperelastic Gent-Thomas cavity in a sphere composed of two inmaterials were discussed under the case of a non-uniform temperature field and the surface dead loading. The mathematical model was first presented based on the dynamical theory of finite deformations. An exact differential relation between the void radius and surface load was obtained by using the variable transformation method. By numerical computation, critical loads and cavitation growth curves were obtained for different temperatures. The influence of the temperature and material parameters of the composed sphere on the void formation and growth was considered and compared with those for static analysis. The results show that the cavity occurs stiddenly with a finite radius and its evolvement with time displays a non-linear periodic vibration and that the critical load decreases with the increase of temperature and also the dynamical critical load is lower than the static critical load under the same conditions. 展开更多
关键词 composed thermal-hyperelastic sphere non-uniform temperature field dynamical formation and growth of cavity nonlinear periodic vibration influence of temperature
下载PDF
Analysis on Change Characteristics of Diurnal Temperature Range in Benxi County from 1958 to 2010
5
作者 Wang Fuchun Song Jifeng 《Meteorological and Environmental Research》 CAS 2014年第9期1-4,共4页
Based on annual mean maximum and minimum temperatures,diurnal temperature range,precipitation,sunshine,total cloud cover and water barometric pressure data in Benxi County from 1958 to 2010,using statistical analysis,... Based on annual mean maximum and minimum temperatures,diurnal temperature range,precipitation,sunshine,total cloud cover and water barometric pressure data in Benxi County from 1958 to 2010,using statistical analysis,the results show that the annual and seasonal diurnal temperature ranges present significant decreasing tendencies,and the reducing tendency is the most remarkable in winter. Autumn reducing tendency is stronger than that in spring,and it is the weakest in summer. Annual and seasonal average temperatures,average maximum and minimum temperatures all present the remarkable rising trends. Rising trend of the minimum temperature is more significant than that of the maximum temperature. The monthly mean diurnal temperature range also presents reducing tendency,and the most reducing scope appear in January and February. Annual and season diurnal temperature range changes are related to sunshine,mean minimum temperature,mean maximum temperature,precipitation,total cloud cover and water barometric pressure,but various essential factors are different in each season. Annual mean temperature,annual mean minimum temperature,annual mean maximum temperature and annual diurnal temperature range all have sudden changes,but the age is inconsistent. 展开更多
关键词 Diurnal temperature range Change characteristics influence factor China
下载PDF
Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO2/H2O technology 被引量:1
6
作者 Meihua Liu Zhangwei Huang +3 位作者 Kuan-Chang Chang Xinnan Lin Lei Li Yufeng Jin 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第12期419-423,共5页
The impact of supercritical CO2/H2O technology on the threshold-voltage instability of AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors(MIS-HEMTs) is investigated. The MIS-HEMTs were placed i... The impact of supercritical CO2/H2O technology on the threshold-voltage instability of AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors(MIS-HEMTs) is investigated. The MIS-HEMTs were placed in a supercritical fluid system chamber at 150℃ for 3 h. The chamber was injected with CO2 and H2O at pressure of 3000 psi(1 psi ≈ 6.895 kPa). Supercritical H2O fluid has the characteristics of liquid H2O and gaseous H2O at the same time, that is, high penetration and high solubility. In addition, OH-produced by ionization of H2O can fill the nitrogen vacancy near the Si3N4/GaN/AlGaN interface caused by high temperature process. After supercritical CO2/H2O treatment, the threshold voltage shift is reduced from 1 V to 0.3 V. The result shows that the threshold voltage shift of MIS-HEMTs could be suppressed by supercritical CO2/H2O treatment. 展开更多
关键词 MIS-HEMTs threshold-voltage instability gate stress temperature influence
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部