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Curvature Compensated CMOS Bandgap Reference with Novel Process Variation Calibration Technique 被引量:1
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作者 Jiancheng Zhang Mao Ye +1 位作者 Yiqiang Zhao Gongyuan Zhao 《Journal of Beijing Institute of Technology》 EI CAS 2018年第2期182-188,共7页
A lowtemperature coefficient( TC) bandgap reference( BGR) with novel process variation calibration technique is proposed in this paper. This proposed calibration technique compensating both TC and output value of ... A lowtemperature coefficient( TC) bandgap reference( BGR) with novel process variation calibration technique is proposed in this paper. This proposed calibration technique compensating both TC and output value of BGR achieves fine adjustment step towards the reference voltage,while keeping optimal TC by utilizing large resistance to help layout match. The high-order curvature compensation realized by poly and p-diffusion resistors is introduced into the design to guarantee the temperature characteristic. Implemented in 180 nm technology,the proposed BGR has been simulated to have a power supply rejection ratio( PSRR) of 91 dB@100 Hz. The calibration technique covers output voltage scope of 0. 49 V-0. 56 Vwith TC of 9. 45 × 10^(-6)/℃-9. 56 × 10^(-6)/℃ over the temperature range of-40 ℃-120 ℃. The designed BGR provides a reference voltage of 500 mV,with measured TC of 10. 1 × 10^(-6)/℃. 展开更多
关键词 bandgap reference voltage process variation resistance-trimming current-calibration curvature compensation temperature coefficient
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