The change in electron mobility of n-Si with increasing the temperature which may be due to the inclusion of gLOphonon energy of 720 K, is presented. Under orientation of the uniaxial pressure X//[110]//J, g-transitio...The change in electron mobility of n-Si with increasing the temperature which may be due to the inclusion of gLOphonon energy of 720 K, is presented. Under orientation of the uniaxial pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The f-transitions are not completely removed from valleys located in the plane (100). In this case, there is no change in the slope of the dependence logρ vs. logT for the temperature range 77 to 450 K. So, no appreciable contribution of g-transitions to intervalley scattering occurs, while the observed is the decisive role of f-transitions to intervalley scattering. The results of measuring of the tensoresistivity effect for n-Si crystals under X//[001]//J are presented at these temperatures too.展开更多
In this paper the pressure-magneto-electric effect of Junction Field Effect Transistor（JFET）is discussed by using standard relaxation techniques.A theoretical evaluation of thepressure sensitivity and Hall sensitivi...In this paper the pressure-magneto-electric effect of Junction Field Effect Transistor（JFET）is discussed by using standard relaxation techniques.A theoretical evaluation of thepressure sensitivity and Hall sensitivity of the n-channel silicon JFET with various geometries（W/L）,gate voltages(V<sub>FS</sub>)and drain voltages(V<sub>DS</sub>)is made.The results show that whenP≠0,B=0,the current-pressure sensitivity is about 2.5%.cm<sup>2</sup>/N,supposing W/L（?）1/2-1.Based on that,a junction field effect pressure sensor with high stability and low noise is designed.展开更多
文摘The change in electron mobility of n-Si with increasing the temperature which may be due to the inclusion of gLOphonon energy of 720 K, is presented. Under orientation of the uniaxial pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The f-transitions are not completely removed from valleys located in the plane (100). In this case, there is no change in the slope of the dependence logρ vs. logT for the temperature range 77 to 450 K. So, no appreciable contribution of g-transitions to intervalley scattering occurs, while the observed is the decisive role of f-transitions to intervalley scattering. The results of measuring of the tensoresistivity effect for n-Si crystals under X//[001]//J are presented at these temperatures too.
文摘In this paper the pressure-magneto-electric effect of Junction Field Effect Transistor（JFET）is discussed by using standard relaxation techniques.A theoretical evaluation of thepressure sensitivity and Hall sensitivity of the n-channel silicon JFET with various geometries（W/L）,gate voltages(V<sub>FS</sub>)and drain voltages(V<sub>DS</sub>)is made.The results show that whenP≠0,B=0,the current-pressure sensitivity is about 2.5%.cm<sup>2</sup>/N,supposing W/L（?）1/2-1.Based on that,a junction field effect pressure sensor with high stability and low noise is designed.
