Terahertz （THz） direct detectors based on superconducting niobium nitride （NbN） hot electron bolometers （HEBs） with microwave （MW） biasing are studied. The MW is used to bias the HEB to the optimum point and t...Terahertz （THz） direct detectors based on superconducting niobium nitride （NbN） hot electron bolometers （HEBs） with microwave （MW） biasing are studied. The MW is used to bias the HEB to the optimum point and to readout the impedance changes caused by the incident THz signals. Compared with the thermal biasing method, this method would be more promising in large scale array with simple readout. The used NbN HEB has an excellent performance as heterodyne detector with the double sideband noise temperature （T N） of 403K working at 4.2K and 0.65THz. As a result, the noise equivalent power of 1.5pW/Hz 1/2 and the response time of 64ps are obtained for the direct detectors based on the NbN HEBs and working at 4.2K and 0.65THz.展开更多
A simple Fourier transform spectrometer was designed and constructed for the measurement of detectors,sources,passive devices and materials in the terahertz(THz) range.It can be operated at frequencies between 0.3 and...A simple Fourier transform spectrometer was designed and constructed for the measurement of detectors,sources,passive devices and materials in the terahertz(THz) range.It can be operated at frequencies between 0.3 and 1.5 THz,using a 50-μm-thick Mylar-film beam splitter.The spectral range can be changed by altering the thickness of the beam splitter.The highest frequency resolution is 750 MHz.We studied the properties of heterodyne detectors including superconductor mixers and semiconductor harmonic mixers,direct detectors including an InSb semiconductor bolometer,superconducting tunnel junctions and the Golay cell,and sources including Gunn oscillators and a microwave source with its multipliers,as well as various materials and passive devices including Si wafers and metal mesh filters.展开更多
In order to improve the performance of a pre-designed direct conversion terahertz detector which is implemented in a 0.25 μm-SiGe-BiCMOS process, we propose some slight modifications in the bipolar section of the SiG...In order to improve the performance of a pre-designed direct conversion terahertz detector which is implemented in a 0.25 μm-SiGe-BiCMOS process, we propose some slight modifications in the bipolar section of the SiGe device physical design. Comparison of our new proposed device and the previously reported device is done by SILVACO TCAD software simulation and we have used previous experimentally reported data to confirm our software simulations. Our proposed modifications in device structural design show a present device responsivity improvement of about 10% from 1 to 1.1 A/W while the bandwidth improvement is about 218 GHz. The minimum noise equivalent power at detector output is increased by about 14.3% and finally power consumption per pixel at the maximum responsivity is decreased by about 5%.展开更多
基金Supported by the National Basic Research Program of China under Grant No 2014CB339800the National Natural Science Foundation of China under Grant Nos 61521001,11173015 and 11227904+1 种基金the Fundamental Research Funds for the Central Universitiesthe Key Laboratory of Advanced Techniques for Manipulating Electromagnetic Waves of Jiangsu Province
文摘Terahertz （THz） direct detectors based on superconducting niobium nitride （NbN） hot electron bolometers （HEBs） with microwave （MW） biasing are studied. The MW is used to bias the HEB to the optimum point and to readout the impedance changes caused by the incident THz signals. Compared with the thermal biasing method, this method would be more promising in large scale array with simple readout. The used NbN HEB has an excellent performance as heterodyne detector with the double sideband noise temperature （T N） of 403K working at 4.2K and 0.65THz. As a result, the noise equivalent power of 1.5pW/Hz 1/2 and the response time of 64ps are obtained for the direct detectors based on the NbN HEBs and working at 4.2K and 0.65THz.
基金supported by the National Basic Research Program of China (2007CB310404 and 2011CBA00107)the National Natural Science Foundation of China (11173015)the Doctoral Funds of the Ministry of Education of China (20090091110039)
文摘A simple Fourier transform spectrometer was designed and constructed for the measurement of detectors,sources,passive devices and materials in the terahertz(THz) range.It can be operated at frequencies between 0.3 and 1.5 THz,using a 50-μm-thick Mylar-film beam splitter.The spectral range can be changed by altering the thickness of the beam splitter.The highest frequency resolution is 750 MHz.We studied the properties of heterodyne detectors including superconductor mixers and semiconductor harmonic mixers,direct detectors including an InSb semiconductor bolometer,superconducting tunnel junctions and the Golay cell,and sources including Gunn oscillators and a microwave source with its multipliers,as well as various materials and passive devices including Si wafers and metal mesh filters.
文摘In order to improve the performance of a pre-designed direct conversion terahertz detector which is implemented in a 0.25 μm-SiGe-BiCMOS process, we propose some slight modifications in the bipolar section of the SiGe device physical design. Comparison of our new proposed device and the previously reported device is done by SILVACO TCAD software simulation and we have used previous experimentally reported data to confirm our software simulations. Our proposed modifications in device structural design show a present device responsivity improvement of about 10% from 1 to 1.1 A/W while the bandwidth improvement is about 218 GHz. The minimum noise equivalent power at detector output is increased by about 14.3% and finally power consumption per pixel at the maximum responsivity is decreased by about 5%.
