Rare earth complex TbY(m-MOBA)_6(phen)_2·2H_2O was synthesized, which was first used as an emitting material in electroluminescence. The properties of monolayer device with the rate of 1000 r·min^(-1) (70 nm...Rare earth complex TbY(m-MOBA)_6(phen)_2·2H_2O was synthesized, which was first used as an emitting material in electroluminescence. The properties of monolayer device with the rate of 1000 r·min^(-1) (70 nm) and the impure concentration of 1∶5 were the best. And the highest brightness of this device reached 21.8 cd·cm^(-2) at a fixed bias of 20 V. Bright green emission can be obtained from the optimized double-layer device, and the highest EL brightness of the device reached 289 cd·m^(-2) at the voltage of 21 V.展开更多
Rare earth complex with a structure of [Tb(m-MBA)_3phen]_2·2H_2O was synthesized,which was used as light-emitting material in electroluminescence. The terbium complex was dispersed in poly (N-vinylcarbazole) (PVK...Rare earth complex with a structure of [Tb(m-MBA)_3phen]_2·2H_2O was synthesized,which was used as light-emitting material in electroluminescence. The terbium complex was dispersed in poly (N-vinylcarbazole) (PVK) as an emitting layer which is made by spin coating. Two kinds of devices were fabricated with structures: as following device Ⅰ: glass/ITO/PVK: terbium complex/PBD/LiF/Al, and device Ⅱ: glass/ITO/PVK: terbium complex/AlQ/LiF/Al. The photoluminescent (PL) and electroluminescent (EL) behaviors of the devices were investigated. Bright green emission can be obtained from optimized device Ⅱ,and the highest EL brightness of it reaches 140 cd·m (-2) at the voltage of 20 V.展开更多
A new rare earth complex Tb(p-MBA)_3phen was synthesized, which is first used as an emitting material in organic electroluminescence. By doping it into the conjugated polymer PVK, single-layer and double-layer devices...A new rare earth complex Tb(p-MBA)_3phen was synthesized, which is first used as an emitting material in organic electroluminescence. By doping it into the conjugated polymer PVK, single-layer and double-layer devices were fabricated with structures: device 1: ITO/PVK∶Tb(p-MBA)_3phen/Al; device 2∶ ITO/PVK: Tb(p-MBA)_3phen/AlQ/LiF/Al. The characteristics of these devices have been investigated. The emission of PVK is completely restrained, and only the pure green emission from Tb^(3+) can be observed in electroluminescence. The optimized device 2 has better monochromatic characteristics with the maximal brightness of 152 cd·m^(-2) at the voltage of 20 V.展开更多
Rare earth complex Tb（BA）3phen was synthesized, which is first used as an emitting material in electroluminescence. The properties of monolayer device with the swing film rote of 1000 r·min^-1（70 nm） and the ...Rare earth complex Tb（BA）3phen was synthesized, which is first used as an emitting material in electroluminescence. The properties of monolayer device with the swing film rote of 1000 r·min^-1（70 nm） and the weight ratio of 1：5 （PVK：Tb（BA）3phen） are the best. And the highest brightness of this device reached 26.8 cd·cm^-2 at a fixed bias of 21 V. Bright green emission could be obtained from the optimized double-layer device and the highest EL brightness of the device reached 322 cd·m^-2 at the voltage of 22 V.展开更多
In this work,efficient green electroluminescent（EL）devices with simplified device structure were prepared by doping trivalent terbium complex Tb（PMIP）3into hole block material Tm Py PB.The high triplet energy of T...In this work,efficient green electroluminescent（EL）devices with simplified device structure were prepared by doping trivalent terbium complex Tb（PMIP）3into hole block material Tm Py PB.The high triplet energy of Tm Py PB helps to confine excitons within light-emitting layer,while the electron transport characteristic of Tm Py PB facilitates the balance of carriers on Tb（PMIP）a3molecules.By optimizing the doping concentration of Tb（PMIP）a3and the thickness of each functional layer,highly efficient green EL device with the structure of ITO/Mo Oa3（3 nm）/TAPC（50 nm）/Tb（PMIP）a3（30 wt%）：Tm Py PB（25 nm）/Tm Py PB（60 nm）/Li F（1 nm）/Al（100 nm）displayed pure Tb^3＋ characteristic emission with maximum current efficiency,power efficiency and brightness up to 47.24 cd/A（external quantum efficiency（EQE）of 14.4%）,43.63 lm/W and 1694 cd/m^2,respectively.At certain brightness of 100 cd/m^2,the device still maintained a current efficiency of 19.96 cd/A（EQE=6.1%）.Such a device design strategy helps to improve the EL performances of Tb（PMIP）a3and to simplify device fabrication processes,thus reduce the fabrication cost.展开更多
A rare earth complex TbY （o-MBA）6（phen）2 was synthesized, which was first used as an emitting material in electroluminescence. By doping it into the conjugated polymer PVK, single-layer and double-layer devices we...A rare earth complex TbY （o-MBA）6（phen）2 was synthesized, which was first used as an emitting material in electroluminescence. By doping it into the conjugated polymer PVK, single-layer and double-layer devices were fabricated with structures： device A ： ITO/PVK ： rpDY （o-MBA）6（phen）2/LiF/Al; B ： ITO/PVK ： rpDY （o-MBA）6（phen）2/AIQ/LiF/Al; C： ITO/PVK： TbY（o-MBA）6（phen）2/BCP/AlQ/LiF/Al. The characteristics of these devices were investigated. For single-layer and double-layer devices, the emission of PVK was completely restrained, and only the green emission from rpD^3＋ was observed in electroluminescence. The above mentioned observation is attributed to the different mechanism of electroluminescence and photoluminescence. In photoluminescence process, the energy of Tb complex may come from PVK through Forster energy transfer process, while in electroluminescence process direct sequential charge trapping appeares to be the main operating mechanism. From the optimized device B, brightly green emission can be obtained, and the highest EL brightness of the device reaches 213 cd·m^-2 at 14 V.展开更多
文摘Rare earth complex TbY(m-MOBA)_6(phen)_2·2H_2O was synthesized, which was first used as an emitting material in electroluminescence. The properties of monolayer device with the rate of 1000 r·min^(-1) (70 nm) and the impure concentration of 1∶5 were the best. And the highest brightness of this device reached 21.8 cd·cm^(-2) at a fixed bias of 20 V. Bright green emission can be obtained from the optimized double-layer device, and the highest EL brightness of the device reached 289 cd·m^(-2) at the voltage of 21 V.
文摘Rare earth complex with a structure of [Tb(m-MBA)_3phen]_2·2H_2O was synthesized,which was used as light-emitting material in electroluminescence. The terbium complex was dispersed in poly (N-vinylcarbazole) (PVK) as an emitting layer which is made by spin coating. Two kinds of devices were fabricated with structures: as following device Ⅰ: glass/ITO/PVK: terbium complex/PBD/LiF/Al, and device Ⅱ: glass/ITO/PVK: terbium complex/AlQ/LiF/Al. The photoluminescent (PL) and electroluminescent (EL) behaviors of the devices were investigated. Bright green emission can be obtained from optimized device Ⅱ,and the highest EL brightness of it reaches 140 cd·m (-2) at the voltage of 20 V.
文摘A new rare earth complex Tb(p-MBA)_3phen was synthesized, which is first used as an emitting material in organic electroluminescence. By doping it into the conjugated polymer PVK, single-layer and double-layer devices were fabricated with structures: device 1: ITO/PVK∶Tb(p-MBA)_3phen/Al; device 2∶ ITO/PVK: Tb(p-MBA)_3phen/AlQ/LiF/Al. The characteristics of these devices have been investigated. The emission of PVK is completely restrained, and only the pure green emission from Tb^(3+) can be observed in electroluminescence. The optimized device 2 has better monochromatic characteristics with the maximal brightness of 152 cd·m^(-2) at the voltage of 20 V.
基金Project supported bythe National Natural Science Foundation of China (90201004) and Beijing Science &Technology Founda-tion
文摘Rare earth complex Tb（BA）3phen was synthesized, which is first used as an emitting material in electroluminescence. The properties of monolayer device with the swing film rote of 1000 r·min^-1（70 nm） and the weight ratio of 1：5 （PVK：Tb（BA）3phen） are the best. And the highest brightness of this device reached 26.8 cd·cm^-2 at a fixed bias of 21 V. Bright green emission could be obtained from the optimized double-layer device and the highest EL brightness of the device reached 322 cd·m^-2 at the voltage of 22 V.
基金supported by the Research Equipment Development Project of Chinese Academy of Sciences(Grant No.YZ201562)the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.Y72014)+3 种基金the Program of Science and Technology Development Plan of Jilin Province of China(Grant No.20170519006JH)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB20000000)the National Natural Science Foundation of China(Grant Nos.21771172,21521092,21590794,21210001)the National Key Basic Research Program of China(Grant No.2014CB643802)
文摘In this work,efficient green electroluminescent（EL）devices with simplified device structure were prepared by doping trivalent terbium complex Tb（PMIP）3into hole block material Tm Py PB.The high triplet energy of Tm Py PB helps to confine excitons within light-emitting layer,while the electron transport characteristic of Tm Py PB facilitates the balance of carriers on Tb（PMIP）a3molecules.By optimizing the doping concentration of Tb（PMIP）a3and the thickness of each functional layer,highly efficient green EL device with the structure of ITO/Mo Oa3（3 nm）/TAPC（50 nm）/Tb（PMIP）a3（30 wt%）：Tm Py PB（25 nm）/Tm Py PB（60 nm）/Li F（1 nm）/Al（100 nm）displayed pure Tb^3＋ characteristic emission with maximum current efficiency,power efficiency and brightness up to 47.24 cd/A（external quantum efficiency（EQE）of 14.4%）,43.63 lm/W and 1694 cd/m^2,respectively.At certain brightness of 100 cd/m^2,the device still maintained a current efficiency of 19.96 cd/A（EQE=6.1%）.Such a device design strategy helps to improve the EL performances of Tb（PMIP）a3and to simplify device fabrication processes,thus reduce the fabrication cost.
文摘A rare earth complex TbY （o-MBA）6（phen）2 was synthesized, which was first used as an emitting material in electroluminescence. By doping it into the conjugated polymer PVK, single-layer and double-layer devices were fabricated with structures： device A ： ITO/PVK ： rpDY （o-MBA）6（phen）2/LiF/Al; B ： ITO/PVK ： rpDY （o-MBA）6（phen）2/AIQ/LiF/Al; C： ITO/PVK： TbY（o-MBA）6（phen）2/BCP/AlQ/LiF/Al. The characteristics of these devices were investigated. For single-layer and double-layer devices, the emission of PVK was completely restrained, and only the green emission from rpD^3＋ was observed in electroluminescence. The above mentioned observation is attributed to the different mechanism of electroluminescence and photoluminescence. In photoluminescence process, the energy of Tb complex may come from PVK through Forster energy transfer process, while in electroluminescence process direct sequential charge trapping appeares to be the main operating mechanism. From the optimized device B, brightly green emission can be obtained, and the highest EL brightness of the device reaches 213 cd·m^-2 at 14 V.
