Optimal impurity distribution model and experimental verification of variation of lateral doping termination

Based on the charge balance principle,an optimal impurity distribution variation of lateral doping termination(OIDVLD)and its ion-injection mask design method are proposed and verified.The comparative simulations and experiments show that OID-VLD can achieve better blocking ability and reliability than the traditional VLD(T-VLD).Vertical double diffusion MOSFET(VDMOS)with OID-VLD achieved breakdown voltage(BV)of 1684 V and passed the 168 hours 100℃-110℃-120℃-125℃high-temperature reverse bias(HTRB)test,while VDMOS with T-VLD obtained BV of 1636 V and failed in the 20 hours 120℃HTRB test.

Cardiovascular complications following medical termination of pregnancy: An updated review

BACKGROUND Around 1 million cases of medical termination of pregnancy(MTP)take place yearly in the United States of America with around 2 percent of this population developing complications.The cardiovascular(CVD)complications occurring post MTP or after stillbirth is not very well described.AIM To help the reader better understand,prepare,and manage these complications by reviewing various cardiac comorbidities seen after MTP.METHODS We performed a literature search in PubMed,Medline,RCA,and google scholar,using the search terms“abortions”or“medical/legal termination of pregnancy”and“cardiac complications”or“cardiovascular complications”.RESULTS The most common complications described in the literature following MTP were infective endocarditis(IE)(n=16),takotsubo cardiomyopathy(TTC)(n=7),arrhythmias(n=5),and sudden coronary artery dissection(SCAD)(n=4).The most common valve involved in IE was the tricuspid valve in 69%(n=10).The most observed causative organism was group B Streptococcus in 81%(n=12).The most common type of TTC was apical type in 57%(n=4).Out of five patients de veloping arrhythmia,bradycardia was the most common and was seen in 60%(3/5)of the patients.All four cases of SCAD-P type presented as acute coronary syndrome 10-14 d post termination of pregnancy with predominant involvement of the right coronary artery.Mortality was only reported following IE in 6.25%.Clinical recovery was reported consistently after optimal medical management following all these complications.CONCLUSION In conclusion,the occurrence of CVD complications following pregnancy termination is infrequently documented in the existing literature.In this review,the most common CVD complication following MTP was noted to be IE and TTC.

A Structural Insight into Gene Transcription Termination

Scientists have long studied gene transcription to better understand gene regulation and expression in living organisms.Transcription is the process by which DNA is copied into RNA,which then produces proteins that perform various functions in the body.Efficient and accurate transcription termination is crucial for controlling gene expression and maintaining genomic integrity.

Determination of Work Function for p-and n-Type 4H-SiC Single Crystals via Scanning Kelvin Probe Force Microscopy

Silicon carbide(SiC) is a promising platform for fabricating high-voltage, high-frequency and high-temperature electronic devices such as metal oxide semiconductor field effect transistors in which many junctions or interfaces are involved. The work function(WF) plays an essential role in these devices. However, studies of the effect of conductive type and polar surfaces on the WF of SiC are limited. Here, we report the measurement of WFs of Si-and C-terminated polar surfaces for both p-type and n-type conductive 4H-SiC single crystals by scanning Kelvin probe microscopy(SKPFM). The results show that p-type SiC exhibits a higher WF than n-type SiC.The WF of a C-terminated polar surface is higher than that of a Si-terminated polar surface, which is further confirmed by first-principles calculations. By revealing this long-standing knowledge gap, our work facilitates the fabrication and development of SiC-based electronic devices, which have tremendous potential applications in electric vehicles, photovoltaics, and so on. This work also shows that SKPFM is a good method for identifying polar surfaces of SiC and other polar materials nondestructively, quickly and conveniently.

福建仙云洞石笋记录的Termination I事件缓变特征

末次冰期终止事件(Termination I,简称TI)是发生在末次冰消期约14.7 ka B.P.北半球最显著的一次快速升温事件,其气候突变的全球响应及转型特征是末次冰消期研究的重点。基于中国东南地区福建西部仙云洞两支石笋(样品编号为XY11和XYⅢ-21)17个高精度230 Th年龄和567个氧同位素数据,建立了12.67~16.10 ka B.P.时段内平均分辨率达十年际的东亚夏季风强度演变序列,捕捉到了Termination I转型缓变特征。仙云洞石笋记录揭示Termination I事件缓变特征持续时间达800 a,明显比也门(约13 a)以及中国西南地区(约35 a)和长江中下游地区(约200 a)石笋记录的转型时间长很多,存在显著的区域差异。仙云洞石笋记录的Termination I转型时段季风开始增强响应于北高纬气候,但仙云洞石笋记录的Termination I缓变特征指示其可能受到热带低纬西太平洋暖池水文循环过程的影响。

如何翻译Termination——以《国际商事合同通则2004》为考察对象

《国际商事合同通则2004》两个翻译版本就"Termination"制度均将其翻译为"合同终止"。然而,无论是从"合同解除""合同终止"制度内涵来看,还是从Termination的词义内涵、法律语言实践以及比较法的角度而言,该词在《国际商事合同通则2004》中均应翻译为"合同解除"。

Evaluation of the passivation effect and the first-principles calculation on surface termination of germanium detector

The point-contact high-purity germanium detector(HPGe)has the advantages of low background,low energy threshold,and high energy resolution and can be applied in the detection of rare-event physics.However,the performance of HPGe must be further improved to achieve superior energy resolution,low noise,and long-term reliability.In this study,we combine computational simulations and experimental comparisons to deeply understand the passivation mechanism of Ge.The surface passivation effect is calculated and inferred from the band structure and density of interface states,and further con-firmed by the minority carrier lifetime.The first-principles method based on the density functional theory was adopted to systematically study the lattice structure,band structure,and density of state(DOS)of four different systems:Ge–H,Ge–Ge-NH 2,Ge-OH,and Ge-SiO_(x).The electronic char-acteristics of the Ge(100)unit cell with different passi-vation groups and Si/O atomic ratios were compared.This shows that H,N,and O atoms can effectively reduce the surface DOS of the Ge atoms.The passivation effect of the SiO_(x) group varied with increasing O atoms and Si/O atomic ratios.Experimentally,SiO and SiO_(2) passivation films were fabricated by electron beam evaporation on a Ge substrate,and the valence state of Si and resistivity was measured to characterize the film.The minority carrier lifetime of Ge-SiO_(2) is 21.3 ls,which is approximately quadruple that of Ge-SiO.The passivation effect and mechanism are discussed in terms of hopping conduction and surface defect density.This study builds a relationship between the passivation effect and different termination groups,and provides technical support for the potential passivation layer,which can be applied in Ge detectors with ultralow energy thresholds and especially in HPGe for rare-event physics detection experiments in future.

Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

The vertical GaN-on-GaN Schottky barrier diode with boron-implanted termination was fabricated and characterized.Compared with the Schottky barrier diode(SBD)without boron-implanted termination,this SBD effectively improved the breakdown voltage from 189 V to 585 V and significantly reduced the reverse leakage current by 10^5 times.In addition,a high Ion/Ioff ratio of ~10^8 was achieved by the boron-implanted technology.We used Technology Computer Aided Design(TCAD)to analyze reasons for the improved performance of the SBD with boron-implanted termination.The improved performance of diodes may be attributed to that B+could confine free carriers to suppress electron field crowding at the edge of the diode,which could improve the breakdown voltage and suppress the reverse leakage current.

Continental reconstruction and metallogeny of the Circum-Junggar areas and termination of the southern Central Asian Orogenic Belt

Continental reconstructions in Central Asia are represented by orogenesis along some large orogenic belts in the Altaid collage （Fig. 1 ） or Central Asian Orogenic Belt （CAOB）, which separate the East European and Siberian cratons to the north from the Tarim and North China cratons to the south （$eng0r et al,, 1993; Jahn et al., 2004; Windley et al., 2007; Qu et al., 2008; Xiao et al., 2010; Xiao and Santosh, 2014）. The Altaid Collage was characterized by complex long tectonic and structural evolution from at least ca. 1.0 Ga to late Paleozoic-early Mesozoic with considerable continental growth （Khain et al., 2002; Jahn et al., 2004; Xiao et al., 2009, 2014; KrOner et al., 2014）, followed by Cenozoic intracontinental evolution related to far-field effect of the collision of the In- dian Plate to the Eurasian Accompanying with these complex world-class ore deposits developed 2001; Goldfarb et al., 2003, 2014）. Plate （Cunningham, 2005）. geodynamic evolutions, many （Qin, 2000; Yakubchuk et al,2001; Goldfarb et al., 2003, 2014）.

A simulation study of field plate termination in Ga2O3 Schottky barrier diodes

In this work, the field plate termination is studied for Ga2O3Schottky barrier diodes(SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field distribution are demonstrated.It is found that the optimal thickness increases with reverse bias increasing for all the three dielectrics of SiO2, Al2O3, and HfO2. As the thickness increases, the maximum electric field intensity decreases in SiO2and Al2O3, but increases in HfO2.Furthermore, it is found that SiO2and HfO2are suitable for the 600 V rate Ga2O3SBD, and Al2O3is suitable for both600 V and 1200 V rate Ga2O3SBD. In addition, the comparison of Ga2O3SBDs between the SiC and GaN counterpart reveals that for Ga2O3, the breakdown voltage bottleneck is the dielectric. While, for SiC and GaN, the bottleneck is mainly the semiconductor itself.

Research on high-voltage 4H-SiC P-i-N diode with planar edge junction termination techniques

The planar edge termination techniques of junction termination extension （JTE） and offset field plates and fieldlimiting rings for the 4H-SiC P i-N diode were investigated and optimized by using a two-dimensional device simulator ISE-TCAD10.0. By experimental verification, a good consistency between simulation and experiment can be observed. The results show that the reverse breakdown voltage for the 4H-SiC P-i-N diode with optimized JTE edge termination can accomplish near ideal breakdown voltage and much lower leakage current. The breakdown voltage can be near 1650 V, which achieves more than 90 percent of ideal parallel plane junction breakdown voltage and the leakage current density can be near 3 ×10^-5 A/cm2.

Early termination of immune tolerance state of hepatitis B virus infection explains liver damage

AIM: To assess an early termination of immune toler-ance state of chronic hepatitis B virus infection in Ban-gladesh and its clinical significance. METHODS: From a series of 167 treatment-naive chronic hepatitis B patients aged between 12 to 20 years(mean ± SD; 17.5 ± 2.8 years), percutaneous liver biopsies of 89 patients who were all hepatitis B e antigen negative at presentation were done. Of them, 81 were included in the study. They had persistently normal or raised serum alanine aminotransferase(ALT) values. A precore mutation(PCM) study was accom-plished in 8 patients who were randomly selected. RESULTS: Forty-four(53.7%) patients had significant necroinflammation(HAI-NI > 7), while significant fi-brosis(HAI-F ≥ 3) was seen in 15(18.5%) patients. Serum ALT(cut off 42 U/L) was raised in 29(35.8%) patients, while low HBV DNA load(< 105 copies/mL)was observed in 57(70.4%) patients. PCM was nega-tive in all 8 patients. CONCLUSION: This study indicates that the current concept of age-related immune tolerance state of HBV infection deserves further analyses in different popula-tion groups.

Determination of the Content of Total Saponins in Paris daliensis H.Li et V. G. Soukoup and Paris dulongensis H. Li et S. kurita

[Objectives]To determine the content of total saponins in Paris daliensis H. Li et V. G. Soukoup and Paris dulongensis H. Li et S.kurita,fill the gap in the study of Paris daliensis H. Li et V. G. Soukoup and Paris dulongensis H. Li et S. kurita,and lay a foundation for searching new medicinal resources of Paris L. [Methods]The perchloric acid colorimetric method and UV spectrophotometer were used to determine the content of total saponins in Paris daliensis H. Li et V. G. Soukoup and Paris dulongensis H. Li et S. kurita at 406 nm. [Results]The lowest content of total saponins in Paris daliensis H. Li et V. G. Soukoup was 2. 637%,while the highest content reached 5. 474%; the lowest content of total saponins in Paris dulongensis was 1. 806%,while the highest content reached 3. 532%. Through the methodological examination,it was found that this method was stable and reliable. [Conclusions] The content of total saponins was high in Paris daliensis H.Li et V. G. Soukoup and Paris dulongensis H. Li et S. kurita,and it was suggested to further study and find the medicinal resources of Paris L.

TERMINATION AND TRANSFER OF THE CHAIN RADICALS IN THE POLYMERIZATION OF ACRYLONITRILE INITIATED BY VANADIUM(V)-THIOUREA REDOX SYSTEM

The dependence of the molecular weights on the concentration of reactants in the polymerization of acrylonitrile initiated by vanadium (V)-thiourea redox system has been investigated. It was found that the molecular weights of the polymer change nonlinearly with increasing concentrations of nitric acid and thiourea. Probably, the composition of the complexes exert a great influence on the chain initiation and termination. The reaction of 'complextermination' gives rise to the decrease of the molecular weights markedly while the concentrations of thiourea and vanadium (V)in the range from one to three molar ratios.

Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension

This paper investigates the behaviours of 4H--SiC merged PiN Schottky （MPS） rectifiers with junction termination extension （JTE） by extensive numerical simulations. The simulated results show that the present model matches the experimental data very well. The influences of the JTE design parameters such as the doping concentration and length of the JTE on the breakdown characteristics are discussed in detail. Then the temperature sensitivity of the forward behaviour is studied in terms of the different designs of 4H--SiC MPS with JTE, which provides a particularly useful guideline for the optimal design of MPS rectifiers with JTE.

Prenatal congenital heart defects in southern China:detection rate and termination of preqnancy,2006-2016

Objective Congenital heart defect (CHD) is one of the most common birth anomalies with high morbidity and mortality. Previous studies of CHD mostly focus on the postnatal prevalence, mortality and successful rate of operation, etc. This study aimed to explore the detection rate of prenatal CHD and CHD factors that attribute to termination of pregnancy (TOP).

Determination of band alignment between GaO_(x)and boron doped diamond for a selective-area-doped termination structure

An n-GaO_(x)thin film is deposited on a single-crystal boron-doped diamond by RF magnetron sputtering to form the pn heterojunction.The n-Ga Ox thin film presents a small surface roughness and a large optical band gap of 4.85 e V.In addition,the band alignment is measured using x-ray photoelectron spectroscopy to evaluate the heterojunction properties.The GaO_(x)/diamond heterojunction shows a type-Ⅱstaggered band configuration,where the valence and conduction band offsets are 1.28 e V and 1.93 e V,respectively.These results confirm the feasibility of the use of n-GaO_(x)as a termination structure for diamond power devices.

4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination

Based on the theoretical analysis of the 4H-SiC Schottky-barrier diodes （SBDs） with field plate termination, 4H-SiC SBD with semi-insulating polycrystalline silicon （SIPOS） FP termination has been fabricated. The relative dielectric con-stant of the SIPOS dielectric first used in 4H-SiC devices is 10.4, which is much higher than that of the SiO2 dielectric, leading to benefitting the performance of devices. The breakdown voltage of the fabricated SBD could reach 1200 V at leak-age current 20 μA, about 70% of the theoretical breakdown voltage. Meanwhile, both of the simulation and experimental results show that the length of the SIPOS FP termination is an important factor for structure design.

A new algorithm based on C-V characteristics to extract the epitaxy layer parameters for power devices with the consideration of termination

Doping concentration and thickness of an epitaxy layer are the most essential parameters for power devices.The conventional algorithm extracts these two parameters by calculating the doping profile from its capacitance-voltage(C-V)characteristics.Such an algorithm treats the device as a parallel-plane junction and ignores the influence of the terminations.The epitaxy layer doping concentration tends to be overestimated and the thickness underestimated.In order to obtain the epitaxy layer parameters with higher accuracy,a new algorithm applicable for devices with field limited ring(FLR)terminations is proposed in this paper.This new algorithm is also based on the C-V characteristics and considers the extension manner of the depletion region under the FLR termination.Such an extension manner depends on the design parameters of the FLR termination and is studied in detail by simulation and modeling.The analytical expressions of the device C-V characteristics and the effective doping profile are derived.More accurate epitaxy layer parameters can be extracted by fitting the effective doping profile expression to the C-V doping profile calculated from the C-V characteristics.The relationship between the horizontal extension width and the vertical depth of the depletion region is also acquired.The credibility of the new algorithm is verified by experiments.The applicability of our new algorithm to FLR/field plate combining terminations is also discussed.Our new algorithm acts as a powerful tool for analyses and improvements of power devices.

GaN Schottky Barrier Diodes with High-Resistivity Edge Termination Formed by Boron Implantation

Edge termination is one of the key technologies for fabricating high voltage Schottky barrier diodes(SBDs),which could effectively reduce the peak electric field along the Schottky contact edge and enhance the breakdown voltage.We adopt a high-resistivity ring structure as the edge termination for planar GaN SBDs.The edge termination is formed by self-aligned boron implantation on the edge of devices to form a highly damaged layer.In the implant dose and energy ranges studied experimentally,the GaN SBDs show improved blocking characteristics in terms of reverse leakage current and breakdown voltage at higher implant dose or implant energy.Meanwhile,the forward turn-on characteristics of the GaN SBDs exhibit no apparent change.