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Effects of Growth Conditions on the Microstructure Characteristics of CdS Thin Films by AP-MOCVD
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作者 Dong Dong Xiao-Bo Liu Jiang-Bo Li Cheng-Wei Shang Wen-Cheng Hu 《Journal of Electronic Science and Technology》 CAS 2010年第2期149-153,共5页
Growth of cadmium sulfide (CdS) thin films on glass substrates was carried out by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) using Cd(S2CNEt2)2 as the single precursor. Changes in th... Growth of cadmium sulfide (CdS) thin films on glass substrates was carried out by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) using Cd(S2CNEt2)2 as the single precursor. Changes in the surface morphology of the deposited CdS thin films were investigated by atomic force microscope (AFM) as the function of substrate temperature (Ts), vaporizing temperature (Tv), and Ar flow rate. With the increase of Tv, CdS thin films evolved from pyramidal structure with fine grains to columnar structure with large grains. X-ray diffraction (XRD) patterns indicated that the CdS films had random orientation at the lower Tv and preferred orientation at the higher Tv. In addition, Ts had a great effect on the surface roughness of the CdS films, and a quantum dot-like structural CdS films were obtained in a narrow range of Ts with high Ar flow rate. Furthermore, the optical properties of the CdS films were measured using ultraviolet-visible (UV/VIS) spectrometer. 展开更多
关键词 Index terms---atmospheric pressure cadmium sulfide (CdS) metal-organic chemical vapor deposition (MOCVD) single precursor surface morphology.
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