In this paper, we use differential game theory to study the three-dimensional two-aircraft air-to-air combat problem. We give the ways to determine the Capture Ranges (CR) and the Dangerous Ranges (DR) for these two a...In this paper, we use differential game theory to study the three-dimensional two-aircraft air-to-air combat problem. We give the ways to determine the Capture Ranges (CR) and the Dangerous Ranges (DR) for these two aircraft according to the target entry directions, barrier and isochronic lines respectively. The simulations are given by referring to two sets of real aircraft parameters. After discussing the simulation results, we have obtained some conclusions that match the real air-to-air combat situation quite well.展开更多
A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation i...A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation in the carrier filling capacitance transient, and full consideration is given to the charge-potential feedback effect on carrier capture process. A simplified calculation of the effect is also given. The interface states have been investigated with this technique at the Si-SiO_2 interface in an n-type Si MOS diode. The results show that the electron capture cross-section strongly depends on both temperature and energy.展开更多
基金research was supported by Aviation Science Fund.
文摘In this paper, we use differential game theory to study the three-dimensional two-aircraft air-to-air combat problem. We give the ways to determine the Capture Ranges (CR) and the Dangerous Ranges (DR) for these two aircraft according to the target entry directions, barrier and isochronic lines respectively. The simulations are given by referring to two sets of real aircraft parameters. After discussing the simulation results, we have obtained some conclusions that match the real air-to-air combat situation quite well.
文摘A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation in the carrier filling capacitance transient, and full consideration is given to the charge-potential feedback effect on carrier capture process. A simplified calculation of the effect is also given. The interface states have been investigated with this technique at the Si-SiO_2 interface in an n-type Si MOS diode. The results show that the electron capture cross-section strongly depends on both temperature and energy.
