Total Dose Radiation Hardened PDSOI CMOS 64k SRAMs

The first domestic 1×10^6rad（Si） total dose hardened 1.2μm partially depleted silicon-on-insulator （PDSOI） 64k SRAM fabricated in SIMOX is demonstrated.The address access time is independent of temperature from -55 to 125℃ and independent of radiation up to 1×10^6rad（Si） for the supply voltage VDD.The standby current is 0.65μA before the total dose of radiation and is only 0.80mA after radiation exposure,which is much better than the specified 10mA.The operating power supply current is 33.0mA before and only 38.1mA afterward,which is much better than the specified 100mA.

Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts

Both nMOS and pMOS transistors with two-edged and multi-finger layouts are fabricated in a standard commercial 0.6μm CMOS/bulk process to study their total ionizing dose （TID） radiation effects. The leakage current, threshold voltage shift, and transconductance of the devices are monitored before and after T-ray irradiation. Different device bias conditions are used during irradiation. The experiment results show that TID radiation effects on nMOS devices are very sensitive to their layout structures. The impact of the layout on TID effects on pMOS devices is slight and can be neglected.

Variation Trend of Total Solar Radiation in Nujiang Basin in Recent 30 Years

Based on the data of sunshine duration,cloud cover and relative humidity from 9 stations in 1981-2008,the spatial and temporal distribution and change trend of total solar radiation in river valley basin of Nujiang were analyzed,as well as its impact factors.The results showed that annual solar radiation decreased obviously in Nujiang basin from 1981 to 1997,with the rate of-161.1 MJ/(m2·10 a),while it went up after 1997 at the rate of 111.3 MJ/(m2·10 a).Annual total cloud cover showed significant decrease trend with the rate of 1.8%/10 a,but annual low cloud cover increased at the rate of 3.2%/10 a.Contrary to the change trend of annual solar radiation,relative humidity rose at the increase of 3.1%/10 a from 1981 to 1997 and decreased significantly at the rate of 5.6%/10 a in 1997-2008.The change of water vapor pressure was consistent with relative humility change.Low cloud cover was the main impact factor of total solar radiation and had a negative correlation with total solar radiation.

A Total Dose Radiation Hardened PDSOI CMOS 3-Line to 8-Line Decoder

The first domestic total dose hardened 2μm partially depleted silicon-on-insulator （PDSOI） CMOS 3-line to 8- line decoder fabricated in SIMOX is demonstrated. The radiation performance is characterized by transistor threshold voltage shifts,circuit static leakage currents,and I-V curves as a function of total dose up to 3× 10^5rad（Si）. The worst case threshold voltage shifts of the front channels are less than 20mV for nMOS transistors at 3 × 10^5rad（Si） and follow-up irradiation and less than 70mV for the pMOS transistors. Furthermore, no significant radiation induced leakage currents and functional degeneration are observed.

Ground-based Observations of Ultraviolet and Total Solar Radiation in Shenyang,Northeast China

Objective This work explores the diurnal variation of Solar ultraviolet radiation （UVR） and total solar radiation （TSR） in northeast China,using daily observations of UVR and TSR in Shenyang.Methods UVR and TSR measurements were carried out from March 1st,2006 to December 31st,2009 in Shenyang,Liaoning province,China （41°51＇ N,123°27＇ E）.Results Both TSR and UVR showed seasonal variation,reaching the highest levels in summer and the lowest in winter.They showed the greatest fluctuation in summer and autumn.The irradiance of TSR and UVR on clear days around the equinoxes and solstices increased substantially compared with the mean seasonal irradiance,especially in autumn.The whole day accumulated dose of UVR in winter was far less than that during the middle part of a summer day （i.e.between 10：00 and 14：00）.It was also less than the accumulated summer dose of morning and afternoon （i.e.between 8：00 and 10：00 and 14：00 and 16：00）.Conclusion The instant irradiance and daily accumulated amount of UVR are low in Shenyang,especially in autumn and winter.Thus concern about the health effects arising because shortage of UVR in northeast China is warranted.

Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide

Nitrogen ions of various doses are implanted into the buried oxide （BOX） of commercial silicon-on-insulator （SOI） materials, and subsequent annealings are carried out at various temperatures. The total dose radiation responses of the nitrogen-implanted SOI wafers are characterized by the high frequency capacitance-voltage （C-V） technique after irradi- ation using a Co-60 source. It is found that there exist relatively complex relationships between the radiation hardness of the nitrogen implanted BOX and the nitrogen implantation dose at different irradiation doses. The experimental results also suggest that a lower dose nitrogen implantation and a higher post-implantation annealing temperature are suitable for improving the radiation hardness of SOI wafer. Based on the measured C V data, secondary ion mass spectrometry （SIMS）, and Fourier transform infrared （FTIR） spectroscopy, the total dose responses of the nitrogen-implanted SOI wafers are discussed.

Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology

This paper studies the total ionizing dose radiation effects on MOS （metal-oxide-semiconductor） transistors with normal and enclosed gate layout in a standard commercial CMOS （compensate MOS） bulk process. The leakage current, threshold voltage shift, and transconductance of the devices were monitored before and after γ-ray irradiation. The parameters of the devices with different layout under different bias condition during irradiation at different total dose are investigated. The results show that the enclosed layout not only effectively eliminates the leakage but also improves the performance of threshold voltage and transconductance for NMOS （n-type channel MOS） transistors. The experimental results also indicate that analogue bias during irradiation is the worst case for enclosed gate NMOS. There is no evident different behaviour observed between normal PMOS （p-type channel MOS） transistors and enclosed gate PMOS transistors.

Effects of cloud,atmospheric water vapor,and dust on photosynthetically active radiation and total solar radiation in a Mongolian grassland

Photosynthetically active radiation （PAR） is an important input parameter for estimating plant produc- tivity due to its key role in the growth and development of plants. However, a worldwide routine network for sys- tematic PAR measurements is not yet established, and PAR is often calculated as a constant fraction of total solar radiation （SR）. Although the ratio of PAR to SR （PAR/SR） has been reported from many places, few studies have been performed for dry regions. The present study was therefore carried out in an arid region of Mongolia to obtain PAP-JSR and examine its dependency on sky clearness （the clearness index）, water vapor in the atmosphere and aeolian dust. Continuous measurements of PAR and SR were taken every one second using quantum and pyranometer sensors, respectively, and the readings were averaged and recorded at intervals of 30 minutes for a period of 12 months. The lowest monthly mean daily PAR/SR occurred in April （0.420）, while the highest ratio was observed in July （0.459）. Mean daily PAR/SR during plant growing season （May-August） was estimated to be 0.442, which could be useful for modeling plant productivity in the study area. The annual mean daily PAR/SR （0.435） was lower than the values reported in many previous studies. This difference could be explained with the regional variation in climate： i.e. drier climatic condition in the study area. PAR/SR was negatively correlated with the clearness index （r= -0.36, P〈0.001）, but positively with atmospheric water vapor pressure （r=0.47, P〈0.001）. The average PAR/SR was significantly lower （P=0.02） on the dusty days compared to the non-dust days. Water vapor in the atmosphere was shown to be the strongest factor in the variation of PAR/SR. This is the first study examining PAR/SR under a semi-arid condition in Mongolia.

Numerical Experiment of Combined Infrared and Ultraviolet Radiation Remote Sensing to Determine the Profile and Total Content of Atmospheric Ozone

A new remote sensing method is described to determine the vertical distribution and total content of atmospheric ozone. The method combines surface infrared, satellite infrared and ultraviolet channels. The width of the infrared channels is 0.01 cm-1, less than Lorentz half-width at the earth's surface, rather than the present width, because these channels can obtain information about variations in the ozone profile below the profile main-peak. The numerical experiments show that the method has a satisfactory precision in determining total ozone content, just about I percent error, and vertical distribution from the earth to 65 km space. In addition, some semi-analysis functions lor calculating backscattered ultraviolet and a relaxation equation are described in this paper.

Total dose radiation characteristics of n-channel MOSFETs fabricated using FIPOS technology

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Simple Analysis on Change Features of Total Solar Radiation in Sanjiang Plain

The yearly,quarterly,monthly and daily change tendencies of total solar radiation at Jiamusi station of Sanjiang Plain were analyzed by statistical approach such as linear tendency estimate with its hourly ground meteorological observation data during 1986 to 2015.The research results indicated that the yearly tendency rate of total solar radiation was increasing obviously,with the velocity of 114.30 MJ/(m2·10 a),while the yearly total solar radiation was 3 667.28-4 935.88 MJ/m^2,and that of March to September was higher than the average.The summer total solar radiation was the most,followed by spring,and that of all the seasons increased except autumn which decreased.The daily total solar radiation increased rapidly from the last ten days of January and reached the peak at the end of June,while it plummeted from the beginning of September to the middle ten days of November,then tended to be gentle.The amount of 5-year total solar radiation was less after 1980s while it was more before1990s,and the total solar radiation was decreasing from 1996 to 2005 but on the contrary it kept increasing in recent ten years.Over the years the earliest record of solar radiation appeared at 05:00 and the latest at 20:00,and the daily variation of the hourly solar radiation got a normal distribution centered on 12:00 to 13:00.

Advances in Monitorinq Methods of Downward Surface Net Radiation

Downward surface net radiation,the net energy of the earth's surface obtained through shortwave and longwave radiation process,is the main driving force for material and energy cycle in the whole earth system.In this study,the main research results of monitoring methods of downward surface net radiation at home and abroad in recent decades have been summarized,and main remote sensing radiation products produced according to various sensors have been introduced.Moreover,the monitoring methods of downward shortwave and long-wave radiation have been discussed,and their principles,advantages and disadvantages have been analyzed to provide scientific references for further study of downward surface solar net radiation in future.

Predictive formulas expressing relationship between dose rate and survival time in total body irradiation in mice

The Gompertz model is the long-time well-known mathematical model of exponential expression among mortality models in the literature that are used to describe mortality and survival data of a population. The death rate of the “probacent” model developed by the author based on animal experiments, clinical applications and mathematical reasoning was applied to predict age-specific death rates in the US elderly population, 2001, and to express a relationship among dose rate, duration of exposure and mortality probability in total body irradiation in humans. The results of both studies revealed a remarkable agreement between “probacent”-formula-predicted and published-reported values of death rates in the US elderly population or mortality probabilities in total body irradiation in humans (p - value > 0.995 in χ2 test in each study). In this study, both the Gompertz and “probacent” models are applied to the Sacher’s comprehensive experimental data on survival times of mice daily exposed to various doses of total body irradiation until death occurs with an assumption that each of both models is applicable to the data. The purpose of this study is to construct general formulas expressing relationship between dose rate and survival time in total body irradiation in mice. In addition, it is attempted to test which model better fits the reported data. The results of the comparative study revealed that the “probacent” model not only fit the Sacher’s reported data but also remarkably better fit the reported data than the Gompertz model. The “probacent” model might be hopefully helpful in research in human tolerance to low dose rates for long durations of exposure in total body irradiation, and further in research in a variety of biomedical phenomena.

Monitoring Bridge Deformation Using Auto-Correlation Adjustment Technique for Total Station Observations

Bridges are omnipresent in every society and they affect its human, social, ecological, economical and cultural aspects. This is why a durable and safe usage of bridges is an imperative goal of structural management. Measurement and monitoring have an essential role in structural management. The benefits of the information obtained by monitoring are apparent in several domains. In deformation analysis, the functional relationship between the acting forces and the resulting deformations should be established. If time depending observations are given, a regression could be used as a functional model. In case of stochastic model uncorrelated observations with identical variance are assumed. Due to the high sampling rate, a small time difference arises between two observations. Thus the assumed stochastic model is not suitable. The calculation has to be effected by means of auto-correlated observations. This paper investigates an integrated monitoring system for the estimation of the deformation (i.e., static, quasi-static) behavior of bridges from total station observations and studies the effect of autocorrelation technique on the accuracy of the estimated parameters and variances. The results have shown that autocorrelation technique is reduced the standard deviation of X&Y-direction about 6.7% to 29.4% and 6.5% to 15.5% of the original value, respectively, but the situation was differ in Z direction;the standard deviation in vertical component Z was increased.

Relationship between Solar Activity, Total Ozone, and Solar Ultraviolet Radiation: Multifractal Analysis

We investigated the relationship between solar activity, total ozone, and solar ultraviolet B (UV-B) radiation from the perspective of multi-fractality. Fractal properties are observed in the time series of the dynamics of complex systems. To detect the changes in fractality, we performed a multifractal analysis using a wavelet transform. The changes in fractality indicated that solar activity was closely related to the total ozone and that the total ozone had a strong effect on UV-B radiation. For high solar activity, the F10.7 flux and global total ozone exhibited monofractality. The F10.7 flux and total ozone also increased, and a change from multifractality to monofractality was observed. This corresponded to the formation of the order. The strong interactions between the solar flux and ozone occur during the high solar activity. In contrast, UV-B radiation increased and showed multifractality, when fluctuations in UV-B radiation became large. For low solar activity, the F10.7 flux and total ozone exhibited multifractality, and UV-B radiation exhibited monofractality. Hence, the change in fractality of the F10.7 flux and total ozone was the opposite of UV-B radiation. A significant change in fractality for F10.7 flux and SSN, which had a significant fluctuation and a slight change in fractality for UV-B radiation, and total ozone were identified.

Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors

The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises (LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease, while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated. Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.

Optimization of Extraction Conditions for Total Flavonoids from Fructus Aurantii Immaturus and Its Anti-UVB Radiation Activity

[Objectives]Optimum extraction conditions of total flavonoids from Fructus Aurantii Immaturus(TFFAI)and its resistance activity to ultraviolet radiation were investigated in present research.[Methods]The optimal extraction conditions of TFFAI were determined by single factor and orthogonal experiments,and the survival rate of TFFAI on HaCaT cells irradiated with UVB rays was investigated.It s antioxidant capacity was determined by ABTS.[Results]The results showed that the highest yield of TFFAI was obtained with 70%ethanol at a solid-to-liquid ratio of 1:50(w/v)and 40℃for 1.5 h by single-factor and orthogonal experiments.Total flavonoids(0.25-1.00 mg/ml)could significantly improve the survival rate of HaCaT cell line.Meanwhile,the maximum absorption peak of TFFAI was found at 283 nm,and in-vitro antioxidant experiment identified that TFFAI had a good clearance rate to ABTS.It suggestes that TFFAI could protect the cells from UVB damage by absorption of UVB rays and anti-oxidation.[Conclusions]TFFAI played a protective role on UVB irradiated cells through UVB ultraviolet absorption and antioxidant pathways.

Total dose radiation effects of pressure sensors fabricated on Unibond-SOI materials

Piezoresistive pressure sensors with a twin-island structure were suc- cessfully fabricated using high quality Unibond-SOI (On Insulator) materials. Since the piezoresistors were structured by the single crystalline silicon overlayer of the SOI wafer and were totally isolated by the buried SiO2. the sensors are radiation-hard. The sensitivity and the linearity of the pressure sensors keep their original values after being irradiated by 60Co γ-rays up to 2.3×104Gy (H2O). However, the offset voltage of the sensor has a slight drift, increasing with the radiation dose. The absolute value of the offset voltage deviation depends on the pressure sensor itself. For comparison, corresponding polysilicon pressure sensors were fabricated using the similar process and irradiated at the same condition.

On-Line Monitoring of Grinding Status Based on Rough Set Theory

This paper focuses on the new approach of on line monitoring of grinding burn and wheel wear based on the rough set theory. This method adopts the grinding chip flow thermal signal, and acquires identification rules by establishing sensitive characteristic parameters and constructing the knowledge system through continuum attribute discretization, attribute reduction and knowledge acquisition, and then monitors grinding burn and wheel wear in accordance with the acquired rules. The experiment results show that the new method is effective.