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Influence of Yb_2O_3-MgO on Mechanical Properties and Thermal Conductivity of Silicon Nitride Ceramics via Gas Pressure Sintering 被引量:2
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作者 LIN Sen YAO Dongxu +3 位作者 XIA Yongfeng ZUO Kaihui YIN Jinwei ZENG Yuping 《China's Refractories》 CAS 2015年第3期34-39,共6页
In this work,Yb2O3 and Mg O were used as sintering aids in preparing silicon nitride ceramics by gas pressure sintering( 0. 6 MPa N2atmosphere) to investigate how the amounts of Yb2O3- Mg O influence the mechanical ... In this work,Yb2O3 and Mg O were used as sintering aids in preparing silicon nitride ceramics by gas pressure sintering( 0. 6 MPa N2atmosphere) to investigate how the amounts of Yb2O3- Mg O influence the mechanical properties and thermal conductivity of silicon nitride ceramics. The total contents of Yb2O3- Mg O added were 1 mol%,2 mol%,4 mol%,6 mol%,8 mol%,10 mol%,12 mol%,14 mol%,keeping the Yb2O3-Mg O molar ratio of 1 ∶ 1 steadily. Curves of the relative density,thermal conductivity and bending strength plotted against the aids content present a ‘mountain'shape with a maximum at nearly 10 mol% aids. The fracture toughness increased with the amounts of additives up to10 mol% and decreased slightly thereafter. The mechanical properties and thermal conductivity were almost proportional to the amount of the additives before10 mol%. When the content of aids exceeded 10 mol%,it would weaken the mechanical properties and thermal conductivity of the ceramics. The optimum content of Yb2O3- Mg O was 10 mol% by gas pressure sintering( 0. 6MPa) at 1 850 ℃ for 4 h,which led to a relative density of 98. 9%,a flexural strength of( 966 ± 38)MPa as well as a fracture toughness of( 6. 29 ± 0. 29)MPa·m1 /2and thermal conductivity of 82 W /( m·K). 展开更多
关键词 silicon nitride sintering mechanical properties thermal conductivity
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Microstructure and properties of electronic packaging shell with high silicon carbide aluminum-base composites by semi-solid thixoforming
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作者 郭明海 刘俊友 +2 位作者 贾成厂 贾琪瑾 果世驹 《Journal of Central South University》 SCIE EI CAS 2014年第11期4053-4058,共6页
The electronic packaging shell with high silicon carbide aluminum-base composites was prepared by semi-solid thixoforming technique. The flow characteristic of the Si C particulate was analyzed. The microstructures of... The electronic packaging shell with high silicon carbide aluminum-base composites was prepared by semi-solid thixoforming technique. The flow characteristic of the Si C particulate was analyzed. The microstructures of different parts of the shell were observed by scanning electron microscopy and optical microscopy, and the thermophysical and mechanical properties of the shell were tested. The results show that there exists the segregation phenomenon between the Si C particulate and the liquid phase during thixoforming, the liquid phase flows from the shell, and the Si C particles accumulate at the bottom of the shell. The volume fraction of Si C decreases gradually from the bottom to the walls. Accordingly, the thermal conductivities of bottom center and walls are 178 and 164 W·m-1·K-1, the coefficients of thermal expansion(CTE) are 8.2×10-6 and 12.6×10-6 K-1, respectively. The flexural strength decreases slightly from 437 to 347 MPa. The microstructures and properties of the shell show gradient distribution. 展开更多
关键词 high silicon carbide aluminum-base composites electronic packaging semi-solid thixoforming thermal conductivity coefficient of thermal expansion
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