Spectral Property and Thermal Quenching Behavior of Tb^(3+)-Doped YAG:Ce Phosphor

A series of YAG：Ce,Tb phosphors were synthesized by vacuum sintering method.Moreover,their spectral properties,thermal quenching behaviors and color rendering properties were investigated systematically.The photoluminescence emission spectra of YAG：Ce,Tb show a great red shift compared with that of YAG：Ce.Direct energy transfer from Tb^（3＋） to Ce^（3＋） ions is verified based on the analysis of different photoluminescence spectra.The quenching temperature for Tb^（3＋）-doped YAG：Ce phosphors is about 490 K.The thermal activation energy is estimated to be 0.18 and 0.291 eV for Tb^（3＋）-doped YAG：Ce and YAG：Ce phosphors,respectively.The smaller activation energy for Tb^（3＋）-doped YAG：Ce means a more rapid nonradiative transition from 5d to 4f state,thus resulting in the lower quenching temperature.In addition,white LEDs with improved color rendering properties are achieved by using modified YAG：Ce,Tb phosphors.

Preparation and characterization of a new orange-red phosphor Ba_(2)LaTaO_(6):Eu^(3+)with abnormal thermal quenching

Herein,double-perovskite Ba_(2)LaTaO_(6) Eu-doped orange-red phosphors were successfully synthesized using a high-temperature solid-phase method.The phosphor phase purity was investigated using X-ray diffraction and microscopic morphology analyses.Their luminescence properties were investigated using absorption,emission,excitation,and temperature-dependent spectra.The transition mechanism mainly involves a magnetic-dipole transition with an energy transfer mode featuring multipole-multipole interactions,and concentration quenching is achieved via dipole-dipole interactions.In addition,the intensity of the temperature-dependent spectrum increases abnormally between 298 and 373 K,with the luminous intensity at 373 K increasing to 110%of that observed at room temperature.This phenomenon can be attributed to lattice defects in Ba_(2)LaTaO_(6):Eu^(3+),and the phosphor luminous intensity at473 K remains at 80.62%of that at room temperature.In addition,white-light-emitting diode devices based on this novel Ba_(2)LaTaO_(6):0.35Eu^(3+)phosphor were fabricated to evaluate the potential applications of the as-prepared phosphor.

Gradient defects mediate negative thermal quenching in phosphors

Luminescent materials often suffer from thermal quenching(TQ),limiting the continuation of their applications under high temperatures up to 473 K.The formation of defect levels could suppress TQ,but rational synthesis and deep understanding of multiple defects-regulated luminescent materials working in such a wide temperature range still remain challenging.Here,we prepare a negative thermal quenching(NTQ)phosphor LiTaO_(3)∶Tb^(3+)by introducing gradient defects V_(Ta)^(5−),Tb_(Li)^(2+),and(V_(Ta)Tb_(Li))^(3−)as identified by advanced experimental and theoretical studies.Its photoluminescence significantly becomes intense with rising temperatures and then slowly increases at 373 to 473 K.The mechanism studies reveal that gradient defects with varied trapping depths could act as energy buffer layers to effectively capture the carriers.Under thermal disturbance,the stored carriers could successively migrate to the activators in consecutive and wide temperature zones,compensating for TQ to enhance luminescence emission.This study initiates the synthesis of multi-defect NTQ phosphors for temperature-dependent applications.

Temperature-Dependent Luminescence Characteristic of SrSi_2O_2N_2:Eu^(2+) Phosphor and Its Thermal Quenching Behavior

The yellow SrSi2O2N2：Eu2＋ phosphor has been synthesized by using a simple solid-state reaction method with Sr2SiO4：Eu2＋ as the precursor. It shows a broad excitation band extending from 250 to 520 nm and an asymmetric emission band with a main peak at about 550 nm. The emission intensity of the SrSi202N2：Eu2＋ is about 1.2 times higher than the commercial yellow phosphor YAG：Ce3＋ （P46-Y3）. The temperature- dependent luminescence characteristic of SrSi202N2：Eu2＋ has been investigated in this paper. With increasing temperature, the emission band of SrSi202N2：Eu2＋ shows anomalous blue-shift along with decreasing emission intensity and the broadening full width at half maximum （FWHM）. Particularly, compared with YAG：Ce3＋ （P46-Y3）, the yellow SrSi202N2：Eu2＋ phosphors exhibit higher thermal stability due to their weaker electron-phonon coupling strength （1.1）, lower stokes shift （0.0576 eV） and larger activation energy （0.288 eV）. All these results indicate that SrSi202N2：Eu2＋ yellow phosphors have potential application for white light-emitting diodes （LEDs）, What＇s more, an energy level scheme is constructed to explain the anomalous blue-shift phenomenon.

Preparation and Luminescent Characteristics of LaPO_4∶Eu Nanoparticles and Nanowires

Nanoparticles and nanowires of LaPO 4: Eu phosphors were synthesized by hydrothermal method. Their luminescent properties including electronic transition, surface effect, and temperature-dependent luminescent characteristics were systemically studied and compared to the bulk powders. It can be concluded that in comparison with the bulk powders, the fluorescence intensity decreases in nanoparticles and nanowires, while the lifetime increases, indicating that the radiative transition rate decreases. The nonradiative transition rate in nanowires decreases than that in nanoparticles due to its decreased surface to volume ratio. The temperature-dependent experiments indicate that the thermal quenching in nanopowders becomes weaker than that in the bulk powders.

Luminescence Properties of Sm^(3+) doped Bi_2ZnB_2O_7

The phosphors of （Bi1- x Smx ） 2ZnB2O7 （ x = 0. 01, 0. 03, 0. 05, 0. 07, and 0. 09） were synthesized by conventional solid state reaction. The purity of all samples was checked by X-ray powder diffraction （XRD）. XRD analysis shows that all these compounds are of a single phase of Bi2ZnB2O7, indicating that the Bi^3＋ in Bi2ZnB2O7 can be partly replaced by the Sm^3＋ without the change of crystal structure. The excitation and emission spectra at room temperature show the typical 4f-4f transitions of Sm^3＋ . The dominant excitation line is around 404 nm due to ^6H5/2→^4K11/2 and the emission spectrum consists of a series of lines at 563, 599, 646, and 704 nm due to ^4G5/2→^6H5/2, ^6H7/2, ^6H9/2, and ^6H11/2, respectively. The optimal concentration of Sm^3＋ in Bi2ZnB2O7 is about 3mol% （relative to lmol Bi^3＋ ） and the critical distance Rc was calculated as 2.1 nm. The temperature dependence of the emission intensity of Bi1.94Sm0.06ZnB2O7 was examined in the temperature range between 100 and 450 K. The quenching temperature where the intensity has dropped to half of the initial intensity is 280 K. The lifetime for Sm^3＋ in Bi1.94Sm0.06ZnB2O7 is fitted as a value of 0.29 and 1.03 ms.

Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells

The structural and optical properties of InGaN/GaN multiple quantum wells （MQWs） with different barrier thick-nesses are studied by means of high resolution X-ray diffraction （HRXRD）, a cross-sectional transmission electron mi-croscope （TEM）, and temperature-dependent photoluminescence （PL） measurements. HRXRD and cross-sectional TEM measurements show that the interfaces between wells and barriers are abrupt and the entire MQW region has good periodic- ity for all three samples. As the barrier thickness is increased, the temperature of the turning point from blueshift to redshift of the S-shaped temperature-dependent PL peak energy increases monotonously, which indicates that the localization po- tentials due to In-rich clusters is deeper. From the Arrhenius plot of the normalized integrated PL intensity, it is found that there are two kinds of nonradiative recombination processes accounting for the thermal quenching of photoluminescence, and the corresponding activation energy （or the localization potential） increases with the increase of the barrier thickness. The dependence on barrier thickness is attributed to the redistribution of In-rich clusters during the growth of barrier layers, i.e., clusters with lower In contents aggregate into clusters with higher In contents.

Photoluminescence characteristics and energy transfer between Bi^(3+) and Eu^(3+) in Na_2O–CaO–GeO_2–SiO_2 glass

We report the photoluminescence（PL） of Eu^3＋-doped glass with Bi^3＋as a sensitizer. The specific glass system with the strong enhancement of the red emission of Eu3＋is obtained by adding a small number of Bi3＋ions instead of increasing the Eu^3＋ concentration. The emission band of Bi3＋overlaps with the excitation band of Eu^3＋ and the lifetime decay curves,resulting in a very efficient energy transfer from Bi^3＋ to Eu^3＋. The probability of energy transfer is strongly dependent on Bi^3＋ concentration. In addition, the intensity of 4f–4f transition is much stronger than that of a charge-transfer（CT） band in the excitation spectrum, which indicates that the Na2O–Ca O–Ge O2-Si O2 glass is a suitable red-emitting phosphor with high stability as a candidate for light-emitting diodes（LEDs）.

Luminescence properties of Eu^(2+) -doped Ba_3Si_6O_12N_2 green phosphor: concentration quenching and thermal stability

The efficient Eu2＋ -doped Ba3 Si6O12N2 green phosphors were prepared by a traditional solid state reaction method under N2 /H2 atmosphere at a temperature up to 1350 ℃ for 12h. Photoluminescence （PL） properties showed a broad emission band with a peak of 525 nm and the full width of half-emission maximums （FWHM） of 70 nm under 460 nm light irradiation. The X-ray diffraction patterns （XRD） and scanning electron microscope （SEM） images of the synthesized powder demonstrated its pure phase and excellent crystallization. Quenching concentration in this phosphor was found to be 0.3. The mechanisms of concentration quenching and redshift of emission peak with increasing concentration of Eu2＋ were studied. The temperature dependence measurement of this green phosphor revealed excellent thermal quenching property compared to silicate green phosphor. It is believed that Ba3 Si6O12N2 ：Eu2＋ is an excellent green phosphor for UV or blue chip based white LEDs.

A highly sensitive multiple-mode optical thermometer designed in Eu^(2+)/^(3+)and Li^(+)co-doped polymorphism compound LaSc_(3)(BO_(3))_(4)

Noncontact optical thermometers have attracted widespread attention,but existing problems such as single-mode and low-sensitivity thermometers still urgently need to be solved.Herein,a novel multiple-mode thermometer was designed for the polymorphism LaSc_(3)(BO_(3))_(4):Eu^(2+/3+),Li^(+).X-ray diffraction(XRD)patterns revealed a slight transition betweenα-andβ-phases with the concentrations of the dopants,which is further proved by structure refinements and first-principles calculations.The coexistence of Eu^(2+)and Eu^(3+)in the phosphors and their relative percentages were confirmed by X-ray absorption near-edge structure(XANES)spectra.Benefiting from appropriate emissions from Eu^(2+)and Eu^(3+)without obvious energy transfer and their opposite changing trends with temperatures under 307 nm excitation,a triple-mode optical thermometer is obtained for this material within the temperature range of 150–450 K.The highest sensitivities of 27.65,14.05,and 7.68%·K^(−1)are achieved based on two fluorescence intensity ratio(FIR)modes of Eu^(2+)and Eu^(3+)(5d–4f/^(5)D_(0)–^(7)F_(2,4))and the fluorescence lifetime(FL)mode of Eu^(2+),respectively.To the best of our knowledge,the former is almost the highest in Eu^(2+)and Eu^(3+)co-doped thermometers.These results indicate that this material may be used as an excellent multiple-mode optical thermometer.

Entanglement entropy of an annulus in holographic thermalization

The thermalization process of the holographic entanglement entropy(HEE)of an annular domain is investigated in the Vaidya-AdS geometry.We determine numerically the Hubeny-Rangamani-Takayanagi(HRT)surface,which may be a hemi-torus or two disks,depending on the ratio of the inner radius to the outer radius of the annulus.More importantly,for some fixed ratio of the two radii,the annulus undergoes a phase transition,or a double phase transition,during thermalization from a hemi-torus to a two-disk configuration,or vice versa.The occurrence of various phase transitions is determined by the ratio of the two radii of the annulus.The rate of entanglement growth is also investigated during the thermal quench.The local maximal rate of entanglement growth occurs in the region with a double phase transition.Finally,if the quench process is sufficiently slow,which may be controlled by the thickness of the null shell,the region with a double phase transition vanishes.

Synthesis, structure and luminescent properties of yellow phosphor La3Si6N11 ：Ce^3＋ for high power white-LEDs

A series of high phase purity blue light excitable yellow-emitting LaSiN:xCephosphors were synthesized by the high temperature solid state reactions method. The structure and luminescent properties were investigated. The phase structure was studied by means of X-ray diffraction, structures refinements and energy dispersive X-ray spectroscopy. The phosphors effectively excited by the light of450 nm and show intense yellow emission at 535 nm with FWHM of 115 nm corresponding to the5 d →~2 Fand 5 d →~2 Ftransitions of Ce. In addition,the optimized LaSiN:0.14 Ceexhibits a weak thermal quenching, which remains 98.2% of the initial emission intensity when heated to 200 ℃,the thermal quenching properties exhibit a modest decline when the temperature returned to room temperature. The above results indicate that LaSiN:Cecan be regarded as a high promising phosphor for applications in high power white-light LED.

Effect of Polymer Matrix on Temperature Sensitivity of Temperature Sensitive Paints

The thermal quenching behaviors of the temperature sensitivity paints （TSP） composed of europium（III） thenoyltrifluoroacetonate （EuTTA） and Eu-phenanthrene complex （Eu-2） in polystyrene （PS）, polymethylmethacrylate （PMMA） and epoxy resin （EP） were investigated. It is found that both the emission intensity and temperature sensitivity were not only affected by the luminescence probes, but also by the polymer matrix. The interaction between probes and matrix results in the alteration of both the non-radiation decay rate and the activation energy of the non-radiative process for the thermal quenching process, i.e. larger activation energy of the non-radiative process shows higher temperature sensitivity and less emission intensity. Therefore, it was confirmed that the temperature sensitivity and luminescent intensity of TSP depended not only on the luminescence probes but also on the polymer matrix.

Ce^(3+) doped BaLu_(2)Al_(2)Ga_(2)SiO_(12)——A novel blue-light excitable cyan-emitting phosphor with ultra-high quantum efficiency and excellent stability for full-spectrum white LEDs

It is well known that cyan-emitting phosphors play a very important role in full-spectrum white LEDs.A large number of cyan-emitting phosphors have been reported in the past few years,however,most of them can only be effectively excited by near-ultraviolet light.There are very few cyan-emitting phosphors that can be intensively excited by blue light(440 and 470 nm).Here,a novel blue-light excitable cyan-emitting phosphor BaLu_(1.95)Ce_(0.05)Al_(2)Ga_(2)SiO_(12)with excellent performance is reported.The cyan phosphor has a cubic structure in space group Ia3^(-)d with a=1.205379(3)nm,which can be easily obtained through a solid-state reaction pathway.The emission peak of the cyan phosphor is located at 500 nm and its internal quantum efficiency is as high as 90.01%when excited at 455 nm at 25℃.The cyan phosphor exhibits superior resistance against thermal quenching of luminescence,and its intensity at 125℃is as strong as 92.14%of the intensity at room temperature.Meanwhile,it also shows an outstanding resistance against water,where its luminescence intensity is hardly changed after being immersed in pure water for 528 h.The white LED lamp prepared by employing the obtained BaLu_(1.95)-Ce_(0.05)Al_(2)Ga_(2)SiO_(12)as cyan phosphor displays remarkable optical properties with CCT=4441 K,Ra=93.7,CRI=90.4 and CIE 1931(x,y)as(x=0.3648,y=0.3752).The experimental results demonstrate that BaLu_(1.95)Ce_(0.05)Al_(2)Ga_(2)SiO_(12)is a promising cyan-emitting phosphor with great application potential in full-spectrum white LEDs.

Synthesis and luminescence properties of Sr_(3-z)(Al_xSi_(1-x))O_(5-x)F_x:zCe^(3+) phosphors

Sr3-z（AlxSi1-x）O5-xFx：zCe^3＋ phosphors were synthesized by high-temperature solid-state reaction. The structure and lumi- nescence properties of phosphors with various A1/Si ratios and Ce3＋ concentrations were characterized using various methods such as X-ray diffraction, photoluminescence excitation and photoluminescence spectra. XRD result displayed that a complete solid solution between Sr3AlO4F and Sr3SiO5 was formed. With the increasing ofx value, a broader excitation band and stronger absorption appeared in the blue light region. Moreover, the emission band shifted to a shorter wavelength and the emission intensity reached a maximum at x=0.6. By adjusting the concentration of Ce3＋, a widely tunable range of emission wavelength under the excitation of 460 um was obtained from the green to yellow regions. In addition, the concentration and thermal quenching were also discussed.