The short-wave HgCdTe thin film material was grown by liquid phase epitaxy on CdTe substrate,Adopt n on p injection bonding and function and flip-flop mixing process,With a low noise readout circuit,sealed with a high...The short-wave HgCdTe thin film material was grown by liquid phase epitaxy on CdTe substrate,Adopt n on p injection bonding and function and flip-flop mixing process,With a low noise readout circuit,sealed with a high airtightness cellular-metal shell,Using a four-stage Thermo Electric Cooler(TEC),320×256 Short Wave Infrared Focal Plane Cooling Detecto r available to operate at near room temperature(210K).Its main photoelectric performance are signal-to-noise ratio greater than 400,nonuniformity equivalent to 4.69%,operability equivalent to 99.76%,frame rate equivalent to 115Hz,component weight less than 150grams.展开更多
文摘The short-wave HgCdTe thin film material was grown by liquid phase epitaxy on CdTe substrate,Adopt n on p injection bonding and function and flip-flop mixing process,With a low noise readout circuit,sealed with a high airtightness cellular-metal shell,Using a four-stage Thermo Electric Cooler(TEC),320×256 Short Wave Infrared Focal Plane Cooling Detecto r available to operate at near room temperature(210K).Its main photoelectric performance are signal-to-noise ratio greater than 400,nonuniformity equivalent to 4.69%,operability equivalent to 99.76%,frame rate equivalent to 115Hz,component weight less than 150grams.
