An In As Sb C H system composed of 5 phases and 54 gaseous species is set up to simulate the MOVPE process of the In(As,Sb) semiconductor. Several phase diagram sections and the composition dependences of semicond...An In As Sb C H system composed of 5 phases and 54 gaseous species is set up to simulate the MOVPE process of the In(As,Sb) semiconductor. Several phase diagram sections and the composition dependences of semiconductors on the input Ⅲ Ⅴ sources are calculated with the conditions defined according to practical MOVPE processes. The experimental data are collected and compared with the calculated results.展开更多
Based on thermodynamic equilibrium theory,a chemical equilibrium model for GaN g rowth is given in electron cyclotron resonance plasma enhanced metalorganic chem ical vapor deposition (ECR-PEMOCVD) system.Calculation ...Based on thermodynamic equilibrium theory,a chemical equilibrium model for GaN g rowth is given in electron cyclotron resonance plasma enhanced metalorganic chem ical vapor deposition (ECR-PEMOCVD) system.Calculation indicates that the growt h driving force are functions of growth conditions:group Ⅲ input partial press ure,input Ⅴ/Ⅲ ratio,and growth temperature.Furthermore,the growth phase diag rams of hexagonal and cubic GaN film growth are obtained,which are consistent wi th our experimental conditions to some extent.Through analysis,it is explained t he reason that high temperature and high input Ⅴ/Ⅲ ratio are favorable for he xagonal GaN film growth.This model can be extended to the similar systems used f or GaN single-crystal film growth.展开更多
The epitaxial techniques are the most important processes in the production of semiconductor materials and optoelectronic devices. Liquid phase epitaxy (LPE) and metal organic vapor phase epitaxy (MOVPE) particularly...The epitaxial techniques are the most important processes in the production of semiconductor materials and optoelectronic devices. Liquid phase epitaxy (LPE) and metal organic vapor phase epitaxy (MOVPE) particularly have many applications.The process characteristics and crystalline properties of both LPE and MOVPE techniques were introduced briefly, the compositional space suitable for LPE and MOVPE growth was discussed from the view point of thermodynamic equilibrium. The analysis and comparison show that on the one hand LPE and MOVPE have some advantages and characteristics in common; on the other hand, they may overcome each other′s weaknesses and deficiencies by offering their own special features.展开更多
文摘An In As Sb C H system composed of 5 phases and 54 gaseous species is set up to simulate the MOVPE process of the In(As,Sb) semiconductor. Several phase diagram sections and the composition dependences of semiconductors on the input Ⅲ Ⅴ sources are calculated with the conditions defined according to practical MOVPE processes. The experimental data are collected and compared with the calculated results.
文摘Based on thermodynamic equilibrium theory,a chemical equilibrium model for GaN g rowth is given in electron cyclotron resonance plasma enhanced metalorganic chem ical vapor deposition (ECR-PEMOCVD) system.Calculation indicates that the growt h driving force are functions of growth conditions:group Ⅲ input partial press ure,input Ⅴ/Ⅲ ratio,and growth temperature.Furthermore,the growth phase diag rams of hexagonal and cubic GaN film growth are obtained,which are consistent wi th our experimental conditions to some extent.Through analysis,it is explained t he reason that high temperature and high input Ⅴ/Ⅲ ratio are favorable for he xagonal GaN film growth.This model can be extended to the similar systems used f or GaN single-crystal film growth.
文摘The epitaxial techniques are the most important processes in the production of semiconductor materials and optoelectronic devices. Liquid phase epitaxy (LPE) and metal organic vapor phase epitaxy (MOVPE) particularly have many applications.The process characteristics and crystalline properties of both LPE and MOVPE techniques were introduced briefly, the compositional space suitable for LPE and MOVPE growth was discussed from the view point of thermodynamic equilibrium. The analysis and comparison show that on the one hand LPE and MOVPE have some advantages and characteristics in common; on the other hand, they may overcome each other′s weaknesses and deficiencies by offering their own special features.
