Monocrystals are synthesized and grown according to Bridgman-Stockbarger method, and the influence of rare earth elements (REE) as well as of γ-irradiation on electrophysical properties of (SnSe)1-x - (SnSe)x (Ln - P...Monocrystals are synthesized and grown according to Bridgman-Stockbarger method, and the influence of rare earth elements (REE) as well as of γ-irradiation on electrophysical properties of (SnSe)1-x - (SnSe)x (Ln - Pr, Tb, Er) alloy system is investigated. During transition from SnSe to (SnSe)1-x - (SnSe)x solid solutions, a partial compensation of charge carriers occurs and additional scattering centres appear. At low temperatures T after irradiation with γ-quanta, thermoemf in samples of p-type conduction becomes higher and decreases in those of n-type conduction. In addition, under the influence of γ-rays radiation, defects come into being causing a decrease in lattice heat conduction and a rise in electron heat conduction. REE impurities are supposed to be positioned among the points of crystal lattice during irradiation with γ-quanta and, moreover, Frenkel defects are formed.展开更多
Results of experimental investigation of detection (rectification) of high power X-band microwave signal in diodes of various design (semiconductor p-n-junction, point-contact, Schottky, Metal-Isolator-Metal—MIM) are...Results of experimental investigation of detection (rectification) of high power X-band microwave signal in diodes of various design (semiconductor p-n-junction, point-contact, Schottky, Metal-Isolator-Metal—MIM) are reported. The maximum of the detected direct voltage V vs. power P of microwave signal and subsequent polarity reversal, previously found in MIM diodes in the optical and microwave bands, have found to be characteristic of all investigated diodes as well. After the reversal of polarity, this dependence comes linear, and the sign of the voltage corresponds to thermoEMF. In some diodes, the hysteresis on V(P) was observed. All 5 types of V(P) of MIM diodes (have made from different pairs of metals), reported earlier, were reproduced on same p-n-junction diode by variable external DC bias. These results joined with abnormal frequency cutoff forced to suggest that there is an unknown mechanism for direct flow of charge carriers (and for generate direct current) in the high-frequency electrical field, which differs from the conventional rectification.展开更多
文摘Monocrystals are synthesized and grown according to Bridgman-Stockbarger method, and the influence of rare earth elements (REE) as well as of γ-irradiation on electrophysical properties of (SnSe)1-x - (SnSe)x (Ln - Pr, Tb, Er) alloy system is investigated. During transition from SnSe to (SnSe)1-x - (SnSe)x solid solutions, a partial compensation of charge carriers occurs and additional scattering centres appear. At low temperatures T after irradiation with γ-quanta, thermoemf in samples of p-type conduction becomes higher and decreases in those of n-type conduction. In addition, under the influence of γ-rays radiation, defects come into being causing a decrease in lattice heat conduction and a rise in electron heat conduction. REE impurities are supposed to be positioned among the points of crystal lattice during irradiation with γ-quanta and, moreover, Frenkel defects are formed.
文摘Results of experimental investigation of detection (rectification) of high power X-band microwave signal in diodes of various design (semiconductor p-n-junction, point-contact, Schottky, Metal-Isolator-Metal—MIM) are reported. The maximum of the detected direct voltage V vs. power P of microwave signal and subsequent polarity reversal, previously found in MIM diodes in the optical and microwave bands, have found to be characteristic of all investigated diodes as well. After the reversal of polarity, this dependence comes linear, and the sign of the voltage corresponds to thermoEMF. In some diodes, the hysteresis on V(P) was observed. All 5 types of V(P) of MIM diodes (have made from different pairs of metals), reported earlier, were reproduced on same p-n-junction diode by variable external DC bias. These results joined with abnormal frequency cutoff forced to suggest that there is an unknown mechanism for direct flow of charge carriers (and for generate direct current) in the high-frequency electrical field, which differs from the conventional rectification.
