Influence of Bath Temperature, Deposition Time and S/Cd Ratio on the Structure, Surface Morphology, Chemical Composition and Optical Properties of CdS Thin Films Elaborated by Chemical Bath Deposition

Cadmium sulphide (CdS) thin films were deposited on glass substrates by the chemical bath deposition (CBD) method, using anhydrous cadmium chloride (CdCl2) and thiourea (CS(NH2)2) as sources of cadmium and sulphur ions respectively. The influence of bath temperature (Tb), deposition time (td) aSnd [S]/[Cd] ratio in the solution on the structural, morphological, chemical composition and optical properties of these films were investigated. XRD studies revealed that all the deposited films were polycrystalline with hexagonal structure and exhibited (002) preferential orientation. The films deposited under optimum conditions (Tb = 75?C, td = 60 min and [S]/[Cd] ratio = 2.5) were relatively well crystallized. These films showed large final thickness and their surface morphologies were composed of small grains with an approximate size of 20 to 30 nm and grains grouped together to form large clusters. EDAX analysis revealed that these films were nonstoichiometric with a slight sulphur deficiency. These films exhibited also a transmittance value about 80% in the visible and infra red range.

Effect of Concentration on the Optical and Solid State Properties of CoO Thin Films Deposited Using the Aqueous Chemical Growth (ACG) Method

Thin films of Cobalt(II) Oxide were deposited from equimolar concentrations of Cobalt Chloride, and Hexamethylenetetramine on clean glass substrates using the Aqueous Chemical Growth method in order to determine the effect of precursor concentration on their optical and solid state properties. The analytical tools used for the study include, Rutherford Back Scattering (RBS) spectroscopy for elemental analysis and determination of film thickness, X-Ray Difftraction (XRD) for crystallographic structure, a UV-VIS spectrophotometer for optical and other solid state properties and a photomicroscope for photomicrographs. The results indicate that an increase in the concentration of precursor materials makes ACG CoO thin film a better absorber of ultraviolet radiation, a better transmitter of infra-red radiation, a reflector of visible radiation and a material having an increased band gap. The ACG CoO thin film deposited from 0.1 M precursor concentration was found to be a suitable material for the construction of thermographic devices, poultry houses etc. It can also serve as window layer in solar cells among other optoelectronic applications.

Microstructure and optical absorption properties of Au/NiO thin films

Au nanoparticles dispersed NiO composite films were prepared by a chemical solution method.The phase structure,microstructure,surface chemical state,and optical absorption properties of the films were characterized by X-ray diffraction,transmission electron microscopy,X-ray photoelectron spectroscopy,and Uv-vis spectrometer.The results indicate that Au particles with the average diameters of 35-42 nm are approximately spherical and disperse in the NiO matrix.The optical absorption peaks due to the surface plasmon resonance of Au particles shift to the shorter wavelength and intensify with the increase of Au content.The bandwidth narrows when the Au content increases from 8.4wt% to 45.2wt%,but widens by further increasing the Au content from 45.2wt% to 60.5wt%.The band gap Eg increases with the increase of Au contents from 8.4wt% to 45.2wt%,but decreases by further increasing the Au content.

Synthesis and optical properties of zinc phosphate microspheres

Monodisperse zinc phosphate microspheres were synthesized by a facile solvothermal method in the presence of oleic acid.X-ray powder diffraction（XRD）,Fourier transform infrared spectrum（FT-IR）,emission scanning electron microscopy（SEM）,and energy dispersive X-ray spectrum（EDX） were used to characterize the microstructures and morphologies of the as-obtained zinc phosphate samples.The experimental results indicate that the zinc phosphate products are well crystallized,and the morphologies of the samples can be easily controlled by the elaborate choice of oleic acid addition and the content of NaOH.Furthermore,self-activated luminescent properties of the products are observed.The as-obtained samples show an intense blue emission under a long-wavelength UV light excitation of 400 nm.The possible luminescent mechanism may be ascribed to the carbon-related surface impurities or defects.

Effects of the ion-beam voltage on the properties of the diamond-like carbon thin film prepared by ion-beam sputtering deposition

Diamond-like carbon （DLC） thin film is one of the most widely used optical thin films. The fraction of chemical bondings has a great influence on the properties of the DLC film. In this work, DLC thin films are prepared by ion-beam sputtering deposition in Ar and CH4 mixtures with graphite as the target. The influences of the ion-beam voltage on the surface morphology, chemical structure, mechanical and infrared optical properties of the DLC films are investigated by atomic force microscopy （AFM）, Raman spectroscopy, nanoindentation, and Fourier transform infrared （FTIR） spec- troscopy, respectively. The results show that the surface of the film is uniform and smooth. The film contains sp2 and sp3 hybridized carbon bondings. The film prepared by lower ion beam voltage has a higher sp3 bonding content. It is found that the hardness of DLC films increases with reducing ion-beam voltage, which can be attributed to an increase in the fraction of sp3 carbon bondings in the DLC film. The optical constants can be obtained by the whole infrared optical spectrum fitting with the transmittance spectrum. The refractive index increases with the decrease of the ion-beam voltage, while the extinction coefficient decreases.

Optical properties of cobalt xanthate films on different substrates

Cobalt isopropyl xanthate thin films （CXTFs） were deposited via chemical bath deposition onto different substrates：commercial glass （CG）, indium tin oxide （ITO）, and poly（methyl methacrylate） （PMM）. Isopropyl xanthate was synthesized according to a method described in the literature. The cobalt nitrate and isopropyl xanthate were mixed in a beaker, which allowed the thin films to be deposited via a simple ion-ion mechanism. The transmission, reflectivity, refractive index, dielectric constant, and optical conductivity were investigated for various thin films coated onto different substrates. An ultraviolet-visible spectrophotometer was used to measure the optical properties of the thin films. The lowest value of the transmission and the highest value of the refractive index were observed for the thin films deposited onto PMM. The structure of the cobalt xanthate was characterized by Fourier transform infrared （FTIR） spectroscopy, which was measured using a Perkin-Elmer Spectrum 400 spectrometer. The stretching vibration of the Co-S bonds was observed at 359 cm^-1 in the FTIR spectrum of the CXTFs.

Production of HfO_2 thin films using different methods: chemical bath deposition, SILAR and sol–gel process

Hafnium oxide thin films （HOTFs） were successfully deposited onto amorphous glasses using chemical bath deposition, successive ionic layer absorption and reaction （SILAR）, and sol-gel methods. The same reactive precursors were used for all of the methods, and all of the films were annealed at 300℃ in an oven （ambient conditions）. After this step, the optical and structural properties of the films produced by using the three different methods were compared. The structures of the films were analyzed by X-ray diffTaction （XRD）. The optical properties are investigated using the ultraviolet-visible （UV-VIS） spectroscopic technique. The film thickness was measured via atomic force microscopy （AFM） in the tapping mode. The surface properties and elemental ratios of the films were investigated and measured by scanning electron microscopy and energy-dispersive X-ray spectroscopy （EDX）. The lowest transmittance and the highest reflectance values were observed for the films produced using the SILAR method. In addition, the most intense characteristic XRD peak was observed in the diffraction pattern of the film produced using the SILAR method, and the greatest thickness and average grain size were calculated for the film produced using the SILAR method. The films produced using SILAR method contained fewer cracks than those produced using the other methods. In conclusion, the SILAR method was observed to be the best method for the production of HOTFs.

Synthesis and Pigmental Properties of Nickel Phosphates by the Substitution with Tetravalent Cerium Cation

In this paper, we report the preparation of nickel phosphate in aqueous solution and its use as inorganic pigment. Because cerium phosphate is insoluble in acidic and basic solution, the addition of cerium was tried to improve the acid and base resistance of nickel phosphate pigment. The cerium substituted nickel phosphates were prepared from phosphoric acid, nickel nitrate, and ammonium cerium nitrate solution. The additional effects of tetravalent cerium cation were studied on the chemical composition, particle shape and size distribution, specific surface area, color, acid and base resistance of the precipitates and their thermal products.

Structural and optical studies on PVA capped SnS films grown by chemical bath deposition for solar cell application

Tin monosulphide(SnS) thin films capped by PVA have been successfully deposited on glass substrates for cost effective photovoltaic device applications by a simple and low-cost wet chemical process, chemical bath deposition(CBD) at different bath temperatures varying in the range, 50–80 °C. X–ray diffraction analysis showed that the deposited films were polycrystalline in nature, showing orthorhombic structure with an intense peak corresponding to(040) plane of SnS. These observations were further confirmed by Raman analysis. FTIR spectra showed the absorption bands which corresponds to PVA in addition to SnS.The scanning electron microscopy and atomic force microscopy studies revealed that the deposited SnS films were uniform and nanostructured with an average particle size of 4.9 to 7.6 nm. The optical investigations showed that the layers were highly absorbing with the optical absorption coefficient ～10~5 cm^(-1). A decrease in optical band gap from 1.92 to 1.55 eV with an increase of bath temperature was observed. The observed band gap values were higher than the bulk value of 1.3 eV, which might be due to quantum confinement effect. The optical band gap values were also used to calculate particle size and the results are discussed.

Synthesis and Evaluation of the Semiconductor Behavior in Vanadium Indanone Derivatives Thin Films

In this work, we propose a method to synthesize vanadium (IV) 2-benzyli-dene-1-indanone derivatives, used to prepare film structures by thermal evaporation. The complexes possess high melting point allowing the using of vacuum deposition methods. All the samples were grown at room temperature (25℃) and low deposition rates (0.4 Å/s). The surface morphology and structure of the deposited films were studied by scanning electron microscopy (SEM) and spectroscopy dispersive energy (EDS). Optical absorption studies of the complex films were performed in the 200 - 1100 nm wavelength range. The Tauc band gap (Eg) of the thin films was determined from the (αhν)1/2 vs. hν plots for indirect transitions. The vanadium (IV) complex films show optical activation energies in the range of organic semiconductors. Multilayer nylon 11/vanadium indanone devices were fabricated using ITO and silver electrodes. The d.c. electrical properties of the device were also investigated. It was found that the temperature-dependent electric current in the structure showed a semiconductor behavior. At lower voltages below 7 V, the current density in the forward direction was found to obey an ohmic I-V relationship;for higher voltages above 7 V, the conduction was dominated by a space-charge-limited (SCLC) mechanism. The electrical activation energies (Ea) of the complexes were in the 2.17 - 2.31 eV range.

Effects of various substrate materials on structural and optical properties of amorphous silicon nitride thin films deposited by plasma-enhanced chemical vapor deposition

The plasma-enhanced chemical vapor deposition(PECVD)technique is well suited for fabricating optical filters with continuously variable refractive index profiles;however,it is not clear how the optical and structural properties of thin films differ when deposited on different substrates.Herein,silicon nitride films were deposited on silicon,fused silica,and glass substrates by PECVD,using silane and ammonia,to investigate the effects of the substrate used on the optical properties and structures of the films.All of the deposited films were amorphous.Further,the types and amounts of Si-centered tetrahedral Si–SivN4-v bonds formed were based upon the substrates used;Si–N4 bonds with higher elemental nitrogen content were formed on Si substrates,which lead to obtaining higher refractive indices,and the Si–SiN3 bonds were mainly formed on glass and fused silica substrates.The refractive indices of the films formed on the different substrates had a maximum difference of0.05(at 550 nm),the refractive index of SiNx films formed on silicon substrates was 1.83,and the refractive indices of films formed on glass were very close to those formed on fused silica.The deposition rates of these SiNx films are similar,and the extinction coefficients of all the films were lower than 10-4.

DOPED SnO_2 FILMS GROWN BY THE METALLORGANIC CHEMICAL VAPOUR DEPOSITION TECHNIQUE

1 INTRODUCTIONStannic oxide as a wide-band gap semiconductor（Eg≈3.5eV）,has high transparency in thevisible spectral region（index of refraction,n≈1.9）and resistance to acids and bases at roomtemperature.The SnO2 thin film.the most useful form in application,has been prepared by avariety of physical and chemical deposition processes.It has been found that undoped SnO2films have high resistivity(about 108--15Ω·cm)at room temperature[1].For manyapplications requiring not too low sheet resistance。

A simple and distinguished nebulizer approach to prepare CdS thin films

In this paper, we report the substrate temperature induced change in structural, optical, morphological,luminescence and photoelectrochemical properties of CdS films deposited by a simple and facile approach called nebulized spray pyrolysis technique. X-ray diffraction study confirmed the deposited CdS films belong to hexagonal wurtzite structure, with preferential orientation along c-axis,(002) direction perpendicular to the substrate plane. The crack free, uniform, and homogeneously distributed spherical particles are witnessed from AFM image. Various optical parameters like energy band gap, optical conductivity,refractive index, extinction coefficient, dielectric constants, and dispersion energy parameters of the films were evaluated. The strong band edge emission observed in the PL study may be attributed to the recombination of excitations and/or shallowly trapped electron-hole pairs. The first and second overtone of LO modes of CdS at 302 and 600 cm-1are observed in the Raman study. The photoelectrochemical properties of the films were also tested.

The Preparation and Characterization of Amorphous SiCN Thin Films

Radio Frequency plasma enhanced Chemical Vapor Deposition (RF CVD) using N2, SiH4 and C2H4 as the reaction sources was used to prepare amorphous ternary Si x C y N z thin films. The chemical states of the C, Si and N atoms in the films were characterized by X-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FTIR). The refractive indexn, extinction coefficientk and optical band gapE opt of the thin films were investigated by UV-visible spectrophotometer and spectroscopic ellipsometer. The results show that a complex chemical bonding network rather than a simple mixture of Si3N4, SiC, CN x and a-C etc., may exist in the ternary thin films. Then's of the films are within the range of 1. 90–2. 45, andE opt's of all samples are within the range of 2. 71–2. 86 eV.

The Optical Property of CPD Prepared CdS Films

CdS films were prepared with chemical pyrolysis deposition (CPD) at 450℃ during film growth, and these CdS films were also annealed at different temperature from 200-500℃.The optical property of the CdS films before and after annealing was investigated at different measuring temperature from 10K to 300K. Optical absorption spectra show that the absorption edge is towards the shorter wavelengths, and the energy band gaps deduced from the plots of (α·hν) 2 vs. hν are increased when the measuring temperature is decreased. The optical behaviors of the CdS films annealed at a certain temperature seem to have the similar tendency at different measuring temperature. Based on dE- ex/dT curve dependent on annealing temperature, some phenomena related microstructure in CdS films could be found.

Characterization of Undoped and Cu-Doped ZnO Thin Films Deposited on Glass Substrates by Spray Pyrolysis

Undoped and copper doped zinc oxide （ZnO） thin films have been prepared on glass substrates by spray pyrolysis technique. The films were doped with copper using the direct method by addition of a copper salt （CuCl2） in the spray solution of ZnO. Variation of structural, electrical, optical and thermoluminescence （TL） properties with doping concentrations is investigated in detail.

Nd:Bi_(2)WO_(6)/ZnS纳米复合材料的制备及其光学性能研究

采用简易的化学溶液法结合采用外延生长技术制备Nd:Bi_(2)WO_(6)/ZnS掺杂纳米复合材料。详细地研究了Nd:Bi_(2)WO_(6)/ZnS纳米复合材料的结构、光谱性质和光学性能。通过掺杂的策略,调控了Bi_(2)WO_(6)/ZnS复合结构的光学带隙调控,优化了样品对可见光的利用。当掺杂浓度为5 at%时,样品的禁带宽度最小,对可见光的吸收能力最强,此时产物的光致发光性能最低。

Annealing Effects on Structural,Optical Properties and Laser-Induced Damage Threshold of MgF2 Thin Films

The chemical structures, optical properties and laser-induced damage thresholds of magnesium fluoride films annealed at different temperatures were investigated. The results showed that the stoichiometry of MgF2 film changed a little with the increase in annealing temperature. Analysis of the optical properties indicated that excellent antireflection behavior of the film in the range of 200-400 nm can be obtained by the samples coated with MgF2 film. The refractive index increased and the extinction coefficient decreased with increasing annealing temperature. Compared with the asdeposited films, the laser-induced damage threshold was improved after annealing process and decreased with the increase in annealing temperature, which was probably due to the denser film and more absorption centers under higher annealing temperature.

Effects of K ions doping on the structure, morphology and optical properties of Cu_2FeSnS_4 thin films prepared by blade-coating process

Quaternary chalcogenide Cu2FeSnS4 （CFTS） nanoparticles, as a kind of potential absorber layer material in thin film solar cells （TFSCs）, were successfully synthesized by using a convenient solvothermal method. Alkali element K is incorporated into CFTS thin films in order to fiLrther improve the surface morphology and the optical properties of related films. X-ray diffraction （XRD）, Raman spectroscopy and field emission scanning electron microscopy （FESEM） were used to characterize the phase purity, morphology and composition of CFTS particles and thin films. The results show that the particle elemental ratios of Cu/（Fe＋Sn） and Fe/Sn are 1.2 and 0.9, respectively, which are close to the characteristics of stoichiometric CFTS. The band gaps of CFTS films before and after doping K ions are estimated to be 1.44 eV and 1.4 eV with an error of ±0.02 eV.