The effect of deposition temperature on the intermixing and microstructure of Fe/Ni thin film

The physical vapour deposition of Ni atoms on α-Fe（001） surface under different deposition temperatures were simulated by molecular dynamics to study the intermixing and microstructure of the interracial region. The results indicate that Ni atoms hardly penetrate into Fe substrate while Fe atoms easily diffuse into Ni deposition layers. The thickness of the intermixing region is temperature-dependent, with high temperatures yielding larger thicknesses. The deposited layers are mainly composed of amorphous phase due to the abnormal deposition behaviour of Ni and Fe. In the deposited Ni-rich phase, the relatively stable metallic compound B2 structured FeNi is found under high deposition temperature conditions.

EFFECT OF SURFACE ENERGY ON DISLOCATION-INDUCED FIELD IN HALF-SPACE WITH APPLICATION TO THIN FILM-SUBSTRATE SYSTEMS

In this work the elastic field of an edge dislocation in a half-space with the effect of surface energy has been obtained. The elastic field is then used to study the image force on the dislocation, the critical thickness for dislocation generation in epitaxial thin films with strain mismatch and the yielding strength of thin films on substrates. The results show that the image forces on the dislocation deviate from the conventional solutions when the distance of the dislocation from the free surface is smaller than several times of the characteristic length. Also due to the effect of surface energy, the critical thickness for dislocation generation is smaller than that predicted by the conventional elastic solutions and the extent of the deviation depends on the magnitude of mismatch strain. In contrast, the effect of surface energy on the yielding strength for many practical thin films can be neglected except for some soft ones where the characteristic length is comparable to the thickness.

Study on superprism effect in the multilayer optical thin film stack

Researches show that multilayer optical thin film stack can exhibit superprism effect due to their large abnormal dispersions. We investigated and simulated this effect numerically in a 1-D non-periodic film structure-Fabry-Perot filters (FPF), which possess drastic change in phase and large group delay around wavelength of peak transmittance, and fabricated this device to realize remarkable superprism effect. We tested experimentally with the maximum spatial separation shift up to 65 μm, and the experimental result is in good agreement with the theory. Compared with the traditional prism, the total thickness of our structure is only 3.3 μm, and our prism shows a stronger angular resolution of 1.8°/nm.

Matching effect in superconducting NbN thin film with a square lattice of holes

A square hole array is fabricated over a micro-bridge of NbN thin film by electron beam lithography and reactive ion milling. Magneto-resistance is measured across the micro-bridge filled with a hole array near the superconducting transition temperature. It is found that magneto-resistance minima occur when the number of vortices is an integer multiple or a fractional multiple of the number of holes. The temperature and the current dependences of the matching effect are studied.

Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance

In this article, an organic thin-film field-effect transistor （OTFFET） with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained from the OTFFET device. The alternating-current （AC） resistance value of the OTFFET device is calculated using the derivation method from the experimental data, and the AC resistance trend curves of the OTFFET device are obtained with the region fitting method. We analyse the characteristics of the OTFFET device with an AC resistance trend curve. To discover whether it has a high resistance, it is proposed to judge the region of the source/drain voltage （VDs） less than the transition voltage, thereby determining whether the contact between the metal electrode and the organic semiconductor layer of the OTFFET device is Ohmic or non-Ohmic. The theoretical analysis shows that the field-effect mobility and the AC resistance are in reverse proportion. Therefore, we point out that reducing AC resistance is necessary if field-effect mobility is to be improved.

The spin Hall effect in single-crystalline gold thin films

The spin Hall effect has been investigated in 10-nm-thick epitaxial Au(001) single crystal films via H-pattern devices,whose minimum characteristic dimension is about 40 nm. By improving the film quality and optimizing the in-plane geometry parameters of the devices, we explicitly extract the spin Hall effect contribution from the ballistic and bypass contribution which were previously reported to be dominating the non-local voltage. Furthermore, we calculate a lower limit of the spin Hall angle of 0.08 at room temperature. Our results indicate that the giant spin Hall effect in Au thin films is dominated not by the interior defects scattering, but by the surface scattering. Besides, our results also provide an additional experimental method to determine the magnitude of spin Hall angle unambiguously.

Effect of Ge Incorporation on Bandgap and Photosensitivity of Amorphous SiGe Thin Films

We investigated the structural and optical properties of amorphous-SiGe thin films synthesized via a low-cost, high-growth rate deposition method. Films were formed by e-beam evaporation of mixed pellets of Si and Ge. Film composition was varied by changing the weight ratio of Si and Ge pellets mixture. Films were amorphous with a composition uniform. Ge-rich films are in tensile stress, while Si-rich films are in compressive stress. As the Ge fraction increases (from 22 at.% to 94 at.%), the optical bandgap decreases (from 1.7 eV to 0.9 eV) and the photosensitivity of the films extends into IR band of solar spectrum. By changing the weighted ratio of the evaporation source mixture, the bandgap and optical sensitivity of a-SiGe films can be easily tuned. Our studies prove that a-SiGe films are a tunable absorber. This can be used for photo-detector, photovoltaic and microelectronic applications to extend the spectral response.

EFFECTS OF MASS TRANSFER ON THE THINNING AND RUPTURE OF A PLANE PARALLEL LIQUID FILM

The effects of mass transfer and physical properties upon the thinning and rupture of adraining plane parallel film are investigated.An equation is derived in which the thinning rate is afunction of bulk properties.surface properties(surface tension,surface viscosities,and the variationof surface tension with surface concentration),intermolecular forces(London-van der Waals forcesand electrostatic double layer forces),adsorption and surface diffusion coefficients,bubble size andfilm thickness.An estimation for the critical thickness at which a film rupture is carried out and thecoalescence time is obtained by integration to the critical thickness,The coalescence time is predictedas a function of bulk and surface properties,London-van der forces,adsorption and surfacediffusion coefficients,and bubble size.

Origin of ultraviolet photovoltaic effect in Fe3O4 thin films

We have investigated the transport and ultraviolet photovoltaic properties of Fe3O4 thin films grown on glass substrates by facing-target sputtering technique. The nonlinear dependence of current-density on voltage suggests that the transport process is most likely the tunnelling process and grain boundaries act as barriers. Furthermore, nonequilibrium electron-hole pairs are excited in the grains and grain boundary regions for Fe3O4 film under ultraviolet laser, since the energy gap of Fe3O4 is smaller than the ultraviolet photon energy. And then the built-in electric field near the grain boundaries will separate carriers, leading to the appearance of an instant photovoltage.

Size Effects of the Critical Temperature in Ferroelectric Thin Films

The size effects of the critical behaviors for the systems of interacting spins are discussed extensively inliterature.In this paper,the finite-size dependence of the critical temperature and susceptibility of the ferroelectric thinfilm are investigated numerically based on the four-state Potts model with the nearest-neighbor interactions between thedipole moments.The four orientations of the domains exist in the ferroelectric film and the movement of the domainwalls determines the polarization switching process besides the boundary conditions of the film.The critical exponentsare obtained and our investigations show that the boundary conditions play the important roles for the ferroelectricproperties of the thin films and the critical behavior of the thin films strongly depends on the feature of the surface.

X-Ray Radiation Sensing Properties of ZnS Thin Film:A Study on the Effect of Annealing

Chemically synthesized ZnS thin film is found to be a good x-ray radiation sensor. We report the effect of annealing on the x-ray radiation detection sensitivity of a ZnS thin film synthesized by a chemical bath deposition technique. The chemically synthesized ZnS films are annealed at 333, 363 and 393K for 1 h. Structural analyses show that the lattice defects in the films decrease with annealing. Further, the band gap is also found to decrease from 3.38 to 3.21 eV after annealing at 393K. Current-voltage characteristics of the films are studied under dark and x-ray irradiation conditions. Due to the decrease of lattice defects and band gap, the conductivity under dark conditions is found to increase from 2.06 × 10^-6 to 1.69 × 10^-5 S/em, while that under x-ray irradiation increases from 4.13 × 10^-5 to 5.28 ×10^-5 S/cm. On the other hand, the x-ray radiation detection sensitivity of the films is found to decrease with annealing. This decrease of detection sensitivity is attributed to the decrease of the band gap as well as some structural and surface morphological changes occurring after annealing.

Bauschinger and size effects in thin-film plasticity due to defect-energy of geometrical necessary dislocations

The Bauschinger and size effects in the thinfilm plasticity theory arising from the defect-energy of geometrically necessary dislocations （GNDs） are analytically investigated in this paper. Firstly, this defect-energy is deduced based on the elastic interactions of coupling dislocations （or pile-ups） moving on the closed neighboring slip plane. This energy is a quadratic function of the GNDs density, and includes an elastic interaction coefficient and an energetic length scale L. By incorporating it into the work- conjugate strain gradient plasticity theory of Gurtin, an energetic stress associated with this defect energy is obtained, which just plays the role of back stress in the kinematic hardening model. Then this back-stress hardening model is used to investigate the Bauschinger and size effects in the tension problem of single crystal Al films with passivation layers. The tension stress in the film shows a reverse dependence on the film thickness h. By comparing it with discrete-dislocation simulation results, the length scale L is determined, which is just several slip plane spacing, and accords well with our physical interpretation for the defect- energy. The Bauschinger effect after unloading is analyzed by combining this back-stress hardening model with a friction model. The effects of film thickness and pre-strain on the reversed plastic strain after unloading are quantified and qualitatively compared with experiment results.

Effect of slip velocity on Casson thin film flow and heat transfer due to unsteady stretching sheet in presence of variable heat flux and viscous dissipation

The aim of the present paper is to study flow and heat transfer charac- teristics of a viscous Casson thin film flow over an unsteady stretching sheet subject to variable heat flux in the presence of slip velocity condition and viscous dissipation. The governing equations are partial differential equations. They are reduced to a set of highly nonlinear ordinary differential equations by suitable similarity transformations. The re- sulting similarity equations are solved numerically with a shooting method. Comparisons with previous works are macle, and the results are found to be in excellent agreement. In the present work, the effects of the unsteadiness parameter, the Casson parameter, the Eckert number, the slip velocity parameter, and the Prandtl number on flow and heat transfer characteristics are discussed. Also, the local skin-friction coefficient and the local Nusselt number at the stretching sheet are computed and discussed.

Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors

The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises (LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease, while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated. Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.

Localization correction to the anomalous Hall effect in amorphous CoFeB thin films

An obvious weak localization correction to anomalous Hall conductance（AHC） in very thin CoFeB film is reported.We find that both the weak localization to AHC and the mechanism of the anomalous Hall effect are related to the CoFeB thickness.When the film is thicker than 3 nm,the side jump mechanism dominates and the weak locaUzation to AHC vanishes.For very thin CoFeB films,both the side jump and skew scattering mechanisms contribute to the anomalous Hall effect,and the weak localization correction to AHC is observed.

EFFECT OF HEAT TREATMENTS ON THE MICROSTRUCTURE AND TRANSFORMATION CHARACTERISTICS OF TiNiPd SHAPE MEMORY ALLOY THIN FILMS

Microstructure and phase transformation behaviors of the film annealed at different temperatures were studied by X-ray diffractometry （XRD）, transmission electron microscopy and differential scanning calorimeter （DSC）. Also tensile tests were examined. For increasing annealed temperature, multiple phase transformations, transformations via a B19-phase or direct martensite/austenite transformtion are observed. The TiNiPd thin film annealed at 750℃ had relatively uniform martensite/austenite transformtion and shape memory effect. Martensite/austenite transformtion was also found in strain-temperature curves. Subsequent annealing at 450℃ had minor effect on transformation temperatures of Ti-Ni-Pd thin films but resulted in more uniform transformation and improved shape memory effect.

Micromechanics of substrate-supported thin films

The mechanical properties of metallic thin films deposited on a substrate play a crucial role in the performance of micro/nano-electromechanical systems(MEMS/NEMS)and flexible electronics. This article reviews ongoing study on the mechanics of substrate-supported thin films, with emphasis on the experimental characterization techniques,such as the rule of mixture and X-ray tensile testing. In particular, the determination of interfacial adhesion energy, film deformation, elastic properties and Bauschinger effect are discussed.

Thickness Dependence of Dielectric Characteristics of SrTiO₃Thin Films on MgAl₂O₄Substrates

SrTiO3 (STO) thin films of different thicknesses were deposited on MgAl2O4 (MAO) substrates to investigate the in-plane strain effect on the soft-mode frequency of the STO films. X-ray reciprocal space mapping (X-RSM) results indicate that there was no relaxation of the in-plane lattice strain of the STO films on MAO. Shifts in the soft-mode frequencies with a decrease in the film thickness were observed using terahertz time-domain spectroscopy (THz-TDS). However, despite the larger lattice mismatch between STO and MAO than that between STO and DyScO3 (DSO), the shifts in the soft-mode frequencies of the STO films on MAO were smaller than those on DSO. The results indicate that the soft-mode frequencies of the STO films on MAO are affected by the c-axis (out-of-plane) lengths.

Properties of PET/ITO Thin Films Deposited by DC Magnetron Sputtering

In_2O_3∶SnO_2(ITO) thin films were fabricated on the substrate of flexible polyethylene terephthalate(PET) by DC magnetron sputtering from a ceramic target of In_2O_3/SnO_2(90∶10). Properties of the thin films were characterized by X-ray diffraction(XRD), four-point probe, Hall-effect measurement, UV-Vis spectrophotometer, and scanning electron microscopy(SEM). The effects of sputtering pressure, oxygen partial pressure and deposition temperature on properties of microstructure and optoelectronics properties of PET/ITO thin films were investigated in detail. High-quality ITO thin films on PET substrates with the resistivity as low as 8.5×10-4 Ω·cm and the optical transmittance over 80% in the visible spectrum range were obtained.