Thin films of tin selenide（Sn_xSe_y） with an atomic ratio of r =[y/x]= 0.5,1 and 1.5 were prepared on a glass substrate at T = 470℃using a spray pyrolysis technique.The initial materials for the preparation of the ...Thin films of tin selenide（Sn_xSe_y） with an atomic ratio of r =[y/x]= 0.5,1 and 1.5 were prepared on a glass substrate at T = 470℃using a spray pyrolysis technique.The initial materials for the preparation of the thin films were an alcoholic solution consisting of tin chloride（SnCl_4·5H_2O） and selenide acide（H_2SeO_3）.The prepared thin films were characterized by X-ray diffraction（XRD）,scanning electron microscopy,scanning tunneling microscopy,scanning helium ion microscopy,and UV-vis spectroscopy.The photoconductivity and thermoelectric effects of the Sn_xSe_ythin films were then studied.The Sn_xSe_y thin films had a polycrystalline structure with an almost uniform surface and cluster type growth.The increasing atomic ratio of r in the films,the optical gap,photosensitivity and Seebeck coefficient were changed from 1.6 to 1.37 eV,0.01 to 0.31 and -26.2 to—42.7 mV/K （at T = 350 K）,respectively.In addition,the XRD patterns indicated intensity peaks in r = 1 that corresponded to the increase in the SnSe and SnSe_2 phases.展开更多
We studied fluorine-doped tin oxide on a glass substrate at 350℃using an ultrasonic spray technique. Tin（Ⅱ） chloride dehydrate,ammonium fluoride dehydrate,ethanol and NaOH were used as the starting material, dopan...We studied fluorine-doped tin oxide on a glass substrate at 350℃using an ultrasonic spray technique. Tin（Ⅱ） chloride dehydrate,ammonium fluoride dehydrate,ethanol and NaOH were used as the starting material, dopant source,solvent and stabilizer,respectively.The SnO_2：F thin films were deposited at 350℃and a pending time of 60 and 90 s.The as-grown films exhibit a hexagonal wurtzite structure and have（101） orientation.The G = 31.82 nm value of the grain size is attained from SnO_2：F film grown at 90 s,and the transmittance is greater than 80%in the visible region.The optical gap energy is found to measure 4.05 eV for the film prepared at 90 s, and the increase in the electrical conductivity of the film with the temperature of the sample is up to a maximum value of 265.58（Ω·cm）^（-1）,with the maximum activation energy value of the films being found to measure 22.85 meV,indicating that the films exhibit an n-type semiconducting nature.展开更多
文摘Thin films of tin selenide（Sn_xSe_y） with an atomic ratio of r =[y/x]= 0.5,1 and 1.5 were prepared on a glass substrate at T = 470℃using a spray pyrolysis technique.The initial materials for the preparation of the thin films were an alcoholic solution consisting of tin chloride（SnCl_4·5H_2O） and selenide acide（H_2SeO_3）.The prepared thin films were characterized by X-ray diffraction（XRD）,scanning electron microscopy,scanning tunneling microscopy,scanning helium ion microscopy,and UV-vis spectroscopy.The photoconductivity and thermoelectric effects of the Sn_xSe_ythin films were then studied.The Sn_xSe_y thin films had a polycrystalline structure with an almost uniform surface and cluster type growth.The increasing atomic ratio of r in the films,the optical gap,photosensitivity and Seebeck coefficient were changed from 1.6 to 1.37 eV,0.01 to 0.31 and -26.2 to—42.7 mV/K （at T = 350 K）,respectively.In addition,the XRD patterns indicated intensity peaks in r = 1 that corresponded to the increase in the SnSe and SnSe_2 phases.
文摘We studied fluorine-doped tin oxide on a glass substrate at 350℃using an ultrasonic spray technique. Tin（Ⅱ） chloride dehydrate,ammonium fluoride dehydrate,ethanol and NaOH were used as the starting material, dopant source,solvent and stabilizer,respectively.The SnO_2：F thin films were deposited at 350℃and a pending time of 60 and 90 s.The as-grown films exhibit a hexagonal wurtzite structure and have（101） orientation.The G = 31.82 nm value of the grain size is attained from SnO_2：F film grown at 90 s,and the transmittance is greater than 80%in the visible region.The optical gap energy is found to measure 4.05 eV for the film prepared at 90 s, and the increase in the electrical conductivity of the film with the temperature of the sample is up to a maximum value of 265.58（Ω·cm）^（-1）,with the maximum activation energy value of the films being found to measure 22.85 meV,indicating that the films exhibit an n-type semiconducting nature.
