EFFECT OF RESIDUAL STRESS ON THE MARTENSITIC TRANSFORMATION OF SPUTTER-DEPOSITED SMA THIN FILMS

TiNi thin films were sputter-deposited on circular single-crystal silicon substrates un-der various sputtering parameters. The crystal structure and residual stress of the as-deposited films were determined by X-ray diffraction and substrate-curvature method. The phenomenon of stress-suppressed martensitic transformation was observed. R is considered that the residual stresses in SMA thin films based on circular substrates act as balanced biaxial tensile stresses. The status of equilibrant delays the align-ment of self-accommodated variants and the volume shrinkage during the martensitic transformation.

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

The time and temperature dependence of threshold voltage shift under positive-bias stress（PBS） and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide（a-IGZO） thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτ stress= 0.72 eV for the PBS process and an average effective energy barrier Eτ recovery= 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development.

Effects of gradient interlayer on residual stress and cracking in TiN thin films

The influence of a gradient interlayer on the residual stress and cracking in TiN thin films was studied as a function of the thickness of gradient interlayer. Both X ray in situ tensile testing and grazing method were used to measure the residual stress in thin films. In TiN films, there exists a residual stress of 10 GPa, which can be remarkably decreased by a gradient interlayer between film and substrate. The cracking behavior of films after tension shows that the crack of film/substrate system begins at interface between film and substrate.

Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors

The instability of p-channel low-temperature polycrystalline silicon thin film transistors(poly-Si TFTs)is investigated under negative gate bias stress(NBS)in this work.Firstly,a series of negative bias stress experiments is performed,the significant degradation behaviors in current-voltage characteristics are observed.As the stress voltage decreases from-25 V to-37 V,the threshold voltage and the sub-threshold swing each show a continuous shift,which is induced by gate oxide trapped charges or interface state.Furthermore,low frequency noise(LFN)values in poly-Si TFTs are measured before and after negative bias stress.The flat-band voltage spectral density is extracted,and the trap concentration located near the Si/SiO2 interface is also calculated.Finally,the degradation mechanism is discussed based on the current-voltage and LFN results in poly-Si TFTs under NBS,finding out that Si-OH bonds may be broken and form Si*and negative charge OH-under negative bias stress,which is demonstrated by the proposed negative charge generation model.

Influence of residual stress on the phase equilibrium of Ti(C_xN_y) thin films

In order to provide a theoretic basis for the research of Ti(C_xN_y) thinfilms, the thermodynamic database of Ti-C-N ternary system is established and the phase diagramsections are calculated. In addition to the assessed thermodynamic properties of Ti-C-N system, theinfluence of the residual strain energy of Ti(C_xN_y) thin films on the phase equilibria isanalyzed. The classical formula for calculating the elastic strain energy is expressed into aRedlich-Kister form in order to perform the thermodynamic and equilibrium calculations using theThermo-Calc software. Isothermal sections at 900 and 1100 K are calculated with this database andcompared with those calculated without considering the residual stress. As a result, with theaddition of strain energy delta-fcc Ti(C_xN_y) phase area shrinks. It is therefore concluded thatwith the influence of the residual stress in Ti(C_xN_y) thin solid film, the precipitation of puredelta film requires more precise control of composition.

Positive gate bias stress-induced hump-effect in elevated-metal metal-oxide thin film transistors

Under the action of a positive gate bias stress, a hump in the subthreshold region of the transfer characteristic is observed for the amorphous indium-gallium-zinc oxide thin film transistor, which adopts an elevated-metal metal-oxide structure. As stress time goes by, both the on-state current and the hump shift towards the negative gate-voltage direction. The humps occur at almost the same current levels for devices with different channel widths, which is attributed to the parasitic transistors located at the channel width edges. Therefore, we propose that the positive charges trapped at the back-channel interface cause the negative shift, and the origin of the hump is considered as being due to more positive charges trapped at the edges along the channel width direction. On the other hand, the hump-effect becomes more significant in a short channel device （L=2 μm）. It is proposed that the diffusion of oxygen vacancies takes place from the high concentration source/drain region to the intrinsic channel region.

Coefficient of thermal expansion of stressed thin films

A new technique was proposed to determine the coefficient of thermal expansion (CTE) of thin films at low temperature. Different pre-stress could be applied and the elastic modulus of materials at different temperatures was measured with CTE simultaneously to eliminate the influence of mechanical deformation caused by the pre-stress. By using this technique, the CTEs of polyimide/silica nanocomposite films with different silica doping levels were experimentally studied at temperature from 77 K to 287 K, and some characteristics related to this new technique were discussed.

Influence of Extended Bias Stress on the Electrical Parameters of Mixed Oxide Thin Film Transistors

This paper investigates the variation of electrical characteristic of indium gallium zinc oxide (IGZO) thin film transistors (TFTs) under gate bias stress. The devices are subjected to positive and negative gate bias stress for prolonged time periods. The effect of bias stress time and polarity on the transistor current equation is investigated and the underlying effects responsible for these variations are determined. Negative gate stress produces a positive shift in the threshold voltage. This can be noted as a variation from prior studies. Due to variation of power factor (n) from two, the integral method is implemented to extract threshold voltage (vt) and power factor (n). Effective, mobility (ueff), drain to source resistance (RDS) and constant k' is also extracted from the device characteristics. The unstressed value of n is deter-mined to be 2.5. The power factor increases with gate bias stress time. The distribution of states in the conduction band is revealed by the variation in power factor.

Bauschinger and size effects in thin-film plasticity due to defect-energy of geometrical necessary dislocations

The Bauschinger and size effects in the thinfilm plasticity theory arising from the defect-energy of geometrically necessary dislocations （GNDs） are analytically investigated in this paper. Firstly, this defect-energy is deduced based on the elastic interactions of coupling dislocations （or pile-ups） moving on the closed neighboring slip plane. This energy is a quadratic function of the GNDs density, and includes an elastic interaction coefficient and an energetic length scale L. By incorporating it into the work- conjugate strain gradient plasticity theory of Gurtin, an energetic stress associated with this defect energy is obtained, which just plays the role of back stress in the kinematic hardening model. Then this back-stress hardening model is used to investigate the Bauschinger and size effects in the tension problem of single crystal Al films with passivation layers. The tension stress in the film shows a reverse dependence on the film thickness h. By comparing it with discrete-dislocation simulation results, the length scale L is determined, which is just several slip plane spacing, and accords well with our physical interpretation for the defect- energy. The Bauschinger effect after unloading is analyzed by combining this back-stress hardening model with a friction model. The effects of film thickness and pre-strain on the reversed plastic strain after unloading are quantified and qualitatively compared with experiment results.

Influence of Magnetic Annealing on Properties of SmFe Thin Films

SmFe thin films were prepared by DC magietron sputtering at room temperature and 300 %. The influence of magnetic annealing temperature on the phase structure and magnetic properties was investigated. Results showed that thermal sputtering followed by a heat treatment process helped to obtain a structure with a relatively large fraction of SmFe2. Residual phases observed were α-Fe, Sm2O3, and unknown phases. During the annealing treatment, the intrinsic compressive stress in SmFe films was relieved and could become tensile at higher annealing temperatures. The degree of in-plane anisotropy weakened, and furthermore, the anisotropy transformed into out-of-plane anisotropy.

Three dimensional phase field study on the thickness effect of ferroelectric polymer thin film

The electromechanical behavior of poly(vinylidene fluoride-trifluoroethylene)[P(VDF -TrFE)]ferroelectric thin film was investigated using the three dimensional(3D) phase-field method. Various energetic contributions,including elastic,electrostatic,and domain wall energy were taken into account in the variational functional of the phase field model.Evolution of the microscopic domain structures of P(VDF-TrFE) polymer film was simulated.Effects of the in-plane residual stress,the film thickness and externally applied electric bias field on the electromechanical properties of the film were explored.The obtained numerical results showed that the macroscopic responses of the electric hysteresis loops are sensitive to the residual stress and electric bias field.It was also found that thickness has a great effect on the electric hysteresis loops and remanent polarization.

Formation mechanism of ordered stress-relief patterns in a free sustained Cu film system

A nearly free sustained copper （Cu） film system has been successfully fabricated by thermal evaporation deposition of Cu atoms on silicone oil surfaces, and a characteristic ordered pattern has been systematically studied. The ordered pattern, namely, band, is composed of a large number of parallel key-formed domains with different width w but nearly uniform length L; its characteristic values of w and L are very susceptible to the growth period, deposition rate and nominal film thickness. The formation mechanism of the ordered patterns is well explained in terms of the relaxation of the internal stress in the films, which is related to the nearly zero adhesion of the solid-liquid interface. By using a two-time deposition method, it is confirmed that the ordered patterns really form in the vacuum chamber.

Evaluation of multiaxial stress in textured cubic films by x-ray diffraction

X-ray diffraction is used extensively to determine the residual stress in bulk or thin film materials on the as- sumptions that the material is composed of fine crystals with random orientation and the stress state is biaxial and homogeneous through the x-ray penetrating region. The stress is calculated from the gradient of ε ～ sin^2 φ linear relation. But the method cannot be used in textured films due to nonlinear relation. In this paper, a novel method is proposed for measuring the multiaxial stresses in cubic films with any [hkl] fibre texture. As an example, a detailed analysis is given for measuring three-dimensional stresses in FCC films with [111] fibre texture.

汽车用硫系玻璃元件红外双波段增透膜的研制

基于硫系玻璃IRG206(As40Se60)基底,研制了3.7~4.8μm及7.5~9.5μm双波段增透膜,可用于汽车红外夜视成像系统。采用电子束和电阻蒸发离子辅助沉积技术,结合化学键分析选取连接层材料,提高基底与膜层之间的结合力;利用离子辅助应力调控技术,优化膜层应力,实现膜层应力的匹配,解决硫系玻璃表面脱膜问题。测试结果表明,该膜层在3.7~4.8μm波段平均透过率为98.31%,在7.5~9.5μm波段平均透过率为97.43%,通过了牢固度、盐雾、高低温、摩擦等环境测试,能够满足汽车红外夜视成像系统的使用要求。

用于柔性电子器件的有机/无机薄膜封装技术研究进展

有机/无机薄膜封装技术被广泛用于有机发光二极管(OLED)、量子点显示及有机光伏等领域,是一种新型的柔性封装技术。综述近年来有机/无机薄膜封装技术的发展趋势,首先概述了传统硬质盖板封装方式与薄膜封装方式的发展及其优缺点。其次,系统地总结了有机/无机薄膜的制备方法,如原子层沉积、等离子体化学气相沉积等,详细阐述了不同制备方法的原理及其应用。再次,讨论了薄膜的微观缺陷、内应力,以及材料界面工程对有机/无机薄膜封装性能的影响,分析总结了有机/无机封装薄膜制备的技术要点,如采用基底表面预处理、引入中性层、调节层间应力等方式获得优质的封装薄膜。最后,探究了有机/无机封装薄膜的内在阻隔机理,提出气体在有机/无机薄膜中的传输方式以努森扩散为主,并总结了提高薄膜封装的策略,即延长气体扩散路径、“主动”引入阻隔基团及薄膜表面改性。提出了未来薄膜封装技术面临的问题,拟为柔性电子器件封装技术的发展提供一定参考。

管式PECVD工艺对“SE+PERC”晶体硅太阳电池镀膜均匀性的影响及改善研究

针对在“SE+PERC”晶体硅太阳电池制备过程中,采用管式等离子体增强化学气相沉积(PECVD)工艺沉积正面钝化介质膜后,硅片正面会出现角部发红色差,即镀膜均匀性异常的问题,通过实验,对硅片厚度、工器具状态、背面膜层结构、正面钝化介质膜沉积工艺等影响因素对硅片正面角部发红色差的影响分别进行分析和讨论,并提出解决方案。研究结果表明:硅片正面角部发红色差的产生与硅片自身厚度、工器具状态、背面膜层结构、正面钝化介质膜沉积工艺均存在一定关系。通过采用最具优势的管式PECVD工艺条件,即优化自动化装片技术、控制石墨舟形变量、采用合适的背面膜层结构,以及正面钝化介质膜沉积工艺采用高射频功率叠加高腔体压力,可将正面角部发红色差硅片的占比降低至0%,从而可有效提升“SE+PERC”晶体硅太阳电池的成品率,提升生产线的经济效益。

X-ray diffraction study of effect of deposition conditions on α-β phase transition and stress evolution in sputter-deposited W coatings

Pure W and W-Cu-W trilayer coatings were deposited on an Fe substrate by d.c. magnetron sputtering. The α-β phase evolution, intragranular stress evolution in sputter-deposited W layer were investigated by x-ray diffraction. They are directly related to the film microstructure, density and adhesion. Therefore, control of the film stress and phase component transition is essential for its applications. The phase component transition from β-W to α-W and intragranular stress evolution from tensile to compressive strongly depend on the deposition parameters and can be induced by lowering Ar pressure and rising target power. The compressively stressed films with α-W phase have a dense microstructure and high adhesion to Fe substrate.

真空热处理对不锈钢表面TiN薄膜结构及性能的影响

为提高不锈钢材料在海洋环境中的耐腐蚀能力,采用磁控溅射技术在304不锈钢表面沉积TiN薄膜,并在不同温度下对其进行真空热处理,研究热处理温度对TiN薄膜结构及性能的影响。结果表明:适当的真空热处理可提高304不锈钢表面TiN薄膜的结晶度及致密性,缓解其残余应力。与未处理薄膜相比,500℃真空热处理后薄膜内部应力可降低87%,与基底的结合强度提高78%,其腐蚀电流密度由2.42×10^(-6)A/cm^(2)降低到4.43×10^(-7)A/cm^(2),腐蚀电位由-0.247 V提高到-0.044 V,耐腐蚀性能明显提升。

大口径主镜反射膜生长热应力及重力仿真

为了充分了解大口径主镜镀膜时热应力及自身重力的分布规律,达到控制反射镜面形变化、提高成膜质量的目的,采用有限元分析方法,对大口径主镜反射膜的生长热应力及重力对反射镜面形的影响进行了理论分析和研究。结果表明,大口径主镜反射膜更容易在靠近边缘位置处出现剥落和损坏情况;大口径主镜镀膜过程中,自身重力引起的反射镜面形变化对镀膜质量会产生较大影响,需要进行重力消除处理;3000 mm口径的主镜在采用镜面向上、向下蒸发膜料的方式镀膜时,需要对支撑方式进行优化设计。该研究为大口径反射镜镀膜时控制热应力及重力对反射镜面形的影响提供了参考。

锑掺杂对柔性Cu_(2)ZnSn(S,Se)_(4)薄膜应力及其太阳电池性能的影响

Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)薄膜中的应力是影响其柔性太阳电池弯曲稳定性的重要因素。采用电子束蒸发法在Cu_(2)ZnSnS_(4)(CZTS)金属预制层中蒸发不同厚度(20、40、60、80 nm)的Sb薄膜,并结合后硒化的方法对CZTSSe薄膜进行Sb掺杂。研究发现Sb掺杂可以有效改善CZTSSe薄膜的结晶质量,提高太阳电池的光电转换效率(PCE)和弯曲稳定性。当Sb掺杂层的厚度为40 nm时,可以在最大程度上提升CZTSSe薄膜的结晶质量,相比未掺杂Sb的情况,其残余应力从-3.93 GPa降低至-2.19 GPa,其太阳电池的PCE由2.04%提升至4.41%;在弯曲角度60°、弯曲100次后,柔性CZTSSe薄膜太阳电池的PCE仍能保持原有效率的89.8%以上,表现出优异的弯曲稳定性。