Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of tu...Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of turn-on voltage(VON),and dual-gate TFTs for acquiring sensor signals and modulating VON have been deployed to improve the robustness and performance of the systems in which they are deployed.Digital circuit building blocks based on fluorinated TFTs have been designed,fabricated,and characterized,which demonstrate the utility of the proposed low-temperature TFT technologies for implementing flexible electronic systems.The construction and characterization of an analog front-end system for the acquisition of bio-potential signals and an active-matrix sensor array for the acquisition of tactile images have been reported recently.展开更多
As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this w...As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this work,the triggering voltage of HCS-induced self-heating(SH)degradation is defined in the output characteristics of amorphous indium-galliumzinc oxide(a-IGZO)TFTs,and used to quantitatively evaluate the thermal generation process of channel donor defects.The fluorinated a-IGZO(a-IGZO:F)was adopted to effectively retard the triggering of the self-heating(SH)effect,and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F.The proposed scheme noticeably enhances the high-current applications of oxide TFTs.展开更多
Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Co...Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Compared to a single p-SnO or n-SnO_(2) charge trapping layer(CTL),the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention.Of the two CTSs,the tunneling layer/p-SnO/nSnO_(2)/blocking layer architecture demonstrates much higher program efficiency,more robust data retention,and comparably superior erase characteristics.The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at-8 V/1 ms,and the ten-year memory window is extrapolated to be 4.41 V.This is attributed to shallow traps in p-SnO and deep traps in n-SnO_(2),and the formation of a built-in electric field in the heterojunction.展开更多
Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in impr...Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in improving the mobility of ITZO TFTs.This paper begins by describing the development and current status of metal-oxide TFTs,and then goes on to explain the advantages of selecting ITZO as the TFT channel layer.The evaluation criteria for TFTs are subsequently introduced,and the reasons and significance of enhancing mobility are clarified.This paper then explores the development of high-mobility ITZO TFTs from five perspectives:active layer optimization,gate dielectric optimization,electrode optimization,interface optimization,and device structure optimization.Finally,a summary and outlook of the research field are presented.展开更多
Since the invention of amorphous indium-gallium-zinc-oxide(IGZO)based thin-film transistors(TFTs)by Hideo Hosono in 2004,investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electri...Since the invention of amorphous indium-gallium-zinc-oxide(IGZO)based thin-film transistors(TFTs)by Hideo Hosono in 2004,investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electrical performance,large-area uniformity,and low processing temperature.This article reviews the recent progress and major trends in the field of IGZO-based TFTs.After a brief introduction of the history of IGZO and the main advantages of IGZO-based TFTs,an overview of IGZO materials and IGZO-based TFTs is given.In this part,IGZO material electron travelling orbitals and deposition methods are introduced,and the specific device structures and electrical performance are also presented.Afterwards,the recent advances of IGZO-based TFT applications are summarized,including flat panel display drivers,novel sensors,and emerging neuromorphic systems.In particular,the realization of flexible electronic systems is discussed.The last part of this review consists of the conclusions and gives an outlook over the field with a prediction for the future.展开更多
The positive gate-bias temperature instability of a radio frequency (RF) sputtered ZnO thin-film transistor (ZnO TFT) is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state cu...The positive gate-bias temperature instability of a radio frequency (RF) sputtered ZnO thin-film transistor (ZnO TFT) is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state current decrease, and the threshold voltage shifts toward the positive direction. The stress amplitude and stress temperature are considered as important factors in threshold-voltage instability, and the time dependences of threshold voltage shift under various bias temperature stress conditions could be described by a stretched-exponential equation. Based on the analysis of hysteresis behaviors in current- voltage and capacitance-voltage characteristics before and after the gate-bias stress, it can be clarified that the threshold- voltage shift is predominantly attributed to the trapping of negative charge carriers in the defect states located at the gate- dielectric/channel interface.展开更多
Annealing effect on the performance of fully transparent thin-film transistor (TTFT), in which zinc tin oxide (ZnSnO) is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO acti...Annealing effect on the performance of fully transparent thin-film transistor (TTFT), in which zinc tin oxide (ZnSnO) is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/(V.s) and 3×10^5 are obtained, respectively. The transfer characteristics of the ZnSnO TPT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.展开更多
Equipped with a two-dimensional topological structure,a group of masses,springs and dampers can be demonstrated to model the internal dynamics of a thin-film transistor(TFT).In this paper,the two-dimensional Mass-Spri...Equipped with a two-dimensional topological structure,a group of masses,springs and dampers can be demonstrated to model the internal dynamics of a thin-film transistor(TFT).In this paper,the two-dimensional Mass-Spring-Damper(MSD)representation of an inverted staggered TFT is proposed to explore the TFT’s internal stress/strain distributions,and the stress-induced effects on TFT’s electrical characteristics.The 2DMSD model is composed of a finite but massive number of interconnected cellular units.The parameters,such as mass,stiffness,and damping ratios,of each cellular unit are approximated from constitutive equations of the compositematerials,while the electrical properties of the inverted staggered TFT are characterized by utilizing an electro-mechanical coupling relation derived from the quantum mechanics.TFTs are often used in biomedical sensors/transducers attached to human skins,and,for the purpose of simulation and validation,the boundary conditions on the interface between the TFT and the human skin were modeled as a spatially distributed sinusoidal excitation with a frequency of 50 Hz,assuming the TFT thickness is more than tens of microns.The fidelity of the 2D MSD structure in the modeling of an inverted staggered TFT is verified by comparing its simulated total displacement fieldwith that of a finite element analysis(FEA)model.The advantages of the MSD model include a dramatic reduction in memory use by up to 60%and faster computation times that are up to 80%lower.More importantly,the MSD model is better suited than FEA to many problems in accurate tissue modeling for medical applications,for which FEA is becoming a bottleneck.This work develops a novel modeling approach,which can be extended to other types of flexible thin film transistors.展开更多
Flexible thin-film transistors(TFTs)have attracted wide interest in the development of flexible and wearable displays or sensors.However,the conventional high processing temperatures hinder the preparation of stable a...Flexible thin-film transistors(TFTs)have attracted wide interest in the development of flexible and wearable displays or sensors.However,the conventional high processing temperatures hinder the preparation of stable and reliable dielectric materials on flexible substrates.Here,we develop a stable laminated Al_(2)O_(3)/HfO_(2) insulator by atomic layer deposition at a relatively lower temperature of 150℃.A sputtered amorphous indium-gallium-zinc oxide(IGZO)with the stoichiometry of In_(0.37)Ga_(0.20)Zn_(0.18)O_(0.25) is used as the active channel material.The flexible TFTs with bottom-gate top-contacted configuration are further fabricated on a flexible polyimide substrate with the Al_(2)O_(3)/HfO_(2) nanolaminates.Benefited from the unique structural and compositional configuration in the nanolaminates consisting of amorphous Al_(2)O_(3),crystallized HfO_(2),and the aluminate Al-Hf-O phase,the as-prepared TFTs present the carrier mobilities of 9.7 cm^(2) V^(−1) s^(−1),ON/OFF ratio of-1.3×10^(6),subthreshold voltage of 0.1 V,saturated current up to 0.83 mA,and subthreshold swing of 0.256 V dec^(−1),signifying a high-performance flexible TFT,which simultaneously able to withstand the bending radius of 40 mm.The TFTs with nanolaminate insulator possess satisfactory humidity stability and hysteresis behavior in a relative humidity of 60-70%,a temperature of 25-30℃ environment.The yield of IGZO-based TFTs with the nanolaminate insulator reaches 95%.展开更多
An analytical model for current-voltage behavior of amorphous In-Ga-Zn-O thin-film transistors(a-IGZO TFTs)with dual-gate structures is developed.The unified expressions for synchronous and asynchronous operating mo...An analytical model for current-voltage behavior of amorphous In-Ga-Zn-O thin-film transistors(a-IGZO TFTs)with dual-gate structures is developed.The unified expressions for synchronous and asynchronous operating modes are derived on the basis of channel charges,which are controlled by gate voltage.It is proven that the threshold voltage of asynchronous dual-gate IGZO TFTs is adjusted in proportion to the ratio of top insulating capacitance to the bottom insulating capacitance(C_(TI)/C_(BI)).Incorporating the proposed model with Verilog-A,a touch-sensing circuit using dual-gate structure is investigated by SPICE simulations.Comparison shows that the touch sensitivity is increased by the dual-gate IGZO TFT structure.展开更多
The time and temperature dependence of threshold voltage shift under positive-bias stress(PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide(a-IGZO) thin-film transisto...The time and temperature dependence of threshold voltage shift under positive-bias stress(PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide(a-IGZO) thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτ stress= 0.72 eV for the PBS process and an average effective energy barrier Eτ recovery= 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development.展开更多
Flexible and transparent electronics enters into a new era of electronic technologies.Ubiquitous applications involve wearable electronics,biosensors,flexible transparent displays,radio-frequency identifications(RFID...Flexible and transparent electronics enters into a new era of electronic technologies.Ubiquitous applications involve wearable electronics,biosensors,flexible transparent displays,radio-frequency identifications(RFIDs),etc.Zinc oxide(ZnO) and relevant materials are the most commonly used inorganic semiconductors in flexible and transparent devices,owing to their high electrical performances,together with low processing temperatures and good optical transparencies.In this paper,we review recent advances in flexible and transparent thin-film transistors(TFTs) based on ZnO and relevant materials.After a brief introduction,the main progress of the preparation of each component(substrate,electrodes,channel and dielectrics) is summarized and discussed.Then,the effect of mechanical bending on electrical performance is highlighted.Finally,we suggest the challenges and opportunities in future investigations.展开更多
High-performance thin-film transistors (TFTs) with a low thermal budget are highly desired for flexible electronic applications. In this work, the TFTs with atomic layer deposited ZnO-channel/Al2O3-dielectric are fa...High-performance thin-film transistors (TFTs) with a low thermal budget are highly desired for flexible electronic applications. In this work, the TFTs with atomic layer deposited ZnO-channel/Al2O3-dielectric are fabricated under the maximum process temperature of 200℃. First, we investigate the effect of post-annealing environment such as N2, H2-N2 (4%) and O2 on the device performance, revealing that o2 annealing can greatly enhance the device performance. Further, we compare the influences of annealing temperature and time on the device performance. It is found that long anneMing at 200℃is equivalent to and even outperforms short annealing at 300℃. Excellent electrical characteristics of the TFTs are demonstrated after 02 anneMing at 200℃ for 35 rain, including a low off-current of 2.3 × 10-13 A, a small sub-threshold swing of 245 m V/dec, a large on/off current ratio of 7.6×10s, and a high electron effective mobility of 22.1cm2/V.s. Under negative gate bias stress at -10 V, the above devices show better electrical stabilities than those post-annealed at 300℃. Thus the fabricated high-performance ZnO TFT with a low thermal budget is very promising for flexible electronic applications.展开更多
In this study,indium oxide(In2O3) thin-film transistors(TFTs) are fabricated by two kinds of low temperature solution-processed technologies(Ta ≤ 300℃),i.e.,water-based(DIW-based) process and alkoxide-based...In this study,indium oxide(In2O3) thin-film transistors(TFTs) are fabricated by two kinds of low temperature solution-processed technologies(Ta ≤ 300℃),i.e.,water-based(DIW-based) process and alkoxide-based(2-ME-based)process.The thickness values,crystallization properties,chemical structures,surface roughness values,and optical properties of In2O3 thin-films and the electrical characteristics of In2O3 TFTs are studied at different annealing temperatures.Thermal annealing at higher temperature leads to an increase in the saturation mobility(μsat) and a negative shift in the threshold voltage(VTH).The DIW-based processed In2O3-TFT annealed at 300℃ exhibits excellent device performance,and one annealed at 200℃ exhibits an acceptable μsat of 0.86 cm^2/V·s comparable to that of a-Si:H TFTs,whereas the 2-ME-based TFT annealed at 300℃ exhibits an abundant μsat of 1.65 cm^2/Vs and one annealed at 200℃ is inactive.The results are attributed to the fact that the DIW-based process induces a higher degree of oxidation and less defect states than the 2-ME-based process at the same temperature.The DIW-based process for fabricating the In2O3 TFT opens the way for the development of nontoxic,low-cost,and low-temperature oxide electronics.展开更多
Strontium-zinc-oxide(SrZnO) films forming the semiconductor layers of thin-film transistors(TFTs) are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-...Strontium-zinc-oxide(SrZnO) films forming the semiconductor layers of thin-film transistors(TFTs) are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-state current can be dramatically reduced by three orders of magnitude. This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby improving the TFT. Additionally, the presence of strontium inhibits the formation of zinc oxide(ZnO) with the hexagonal wurtzite phase and permits the formation of an unusual phase of ZnO, thus significantly changing the surface morphology of ZnO and effectively reducing the trap density of the channel.展开更多
A new type of degradation phenomena featured with increased subthreshold swing and threshold voltage after negative gate bias stress(NBS)is observed for amorphous InGaZnO(a-IGZO)thin-film transistors(TFTs),which can r...A new type of degradation phenomena featured with increased subthreshold swing and threshold voltage after negative gate bias stress(NBS)is observed for amorphous InGaZnO(a-IGZO)thin-film transistors(TFTs),which can recover in a short time.After comparing with the degradation phenomena under negative bias illumination stress(NBIS),positive bias stress(PBS),and positive bias illumination stress(PBIS),degradation mechanisms under NBS is proposed to be the generation of singly charged oxygen vacancies(V_(o)^(+))in addition to the commonly reported doubly charged oxygen vacancies(V_(o)^(2+)).Furthermore,the NBS degradation phenomena can only be observed when the transfer curves after NBS are measured from the negative gate bias to the positive gate bias direction due to the fast recovery of V_(o)^(+)under positive gate bias.The proposed degradation mechanisms are verified by TCAD simulation.展开更多
The properties of top-contact organic thin-film transistors (TC-OTFTs) using ultra-thin 2, 9-dimethyl-4, 7- diphenyl-1, 10-phenanthroline (BCP) as a hole-blocking interlayer have been improved significantly and a ...The properties of top-contact organic thin-film transistors (TC-OTFTs) using ultra-thin 2, 9-dimethyl-4, 7- diphenyl-1, 10-phenanthroline (BCP) as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer. This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels. The accumulation and transfer of the hole carriers arc limited by the BCP interlayer in the vertical region of the channel. A huge amount of carriers is located not only at the interface between pentacene and the gate insulator, but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator, respectively. The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer, and can increase the hole mobility and output current of OTFTs. The TC-OTFTs with a BCP interlayer at VDS = --20 V showed excellent hole mobility μFE and threshold voltage VTH of 0.58 cm^2/(V-s) and -4.6 V, respectively.展开更多
The negative gate bias stress(NBS)reliability of n-type polycrystalline silicon(poly-Si)thin-film transistors(TFTs)with a distinct defective grain boundary(GB)in the channel is investigated.Results show that conventio...The negative gate bias stress(NBS)reliability of n-type polycrystalline silicon(poly-Si)thin-film transistors(TFTs)with a distinct defective grain boundary(GB)in the channel is investigated.Results show that conventional NBS degradation with negative shift of the transfer curves is absent.The on-state current is decreased,but the subthreshold characteristics are not affected.The gate bias dependence of the drain leakage current at V_(ds)of 5.0 V is suppressed,whereas the drain leakage current at V_(ds)of 0.1 V exhibits obvious gate bias dependence.As confirmed via TCAD simulation,the corresponding mechanisms are proposed to be trap state generation in the GB region,positive-charge local formation in the gate oxide near the source and drain,and trap state introduction in the gate oxide.展开更多
Persistent photoconductivity(PPC)effect and its light-intensity dependence of both enhancement and depletion(E-/D-)mode amorphous InGaZnO(a-IGZO)thin-film transistors(TFTs)are systematically investigated.Density of ox...Persistent photoconductivity(PPC)effect and its light-intensity dependence of both enhancement and depletion(E-/D-)mode amorphous InGaZnO(a-IGZO)thin-film transistors(TFTs)are systematically investigated.Density of oxygen vacancy(V O)defects of E-mode TFTs is relatively small,in which formation of the photo-induced metastable defects is thermally activated,and the activation energy(E a)decreases continuously with increasing light-intensity.Density of V O defects of D-mode TFTs is much larger,in which the formation of photo-induced metastable defects is found to be spontaneous instead of thermally activated.Furthermore,for the first time it is found that a threshold dose of light-exposure is required to form fully developed photo-induced metastable defects.Under low light-exposure below the threshold,only a low PPC barrier is formed and the PPC recovery is fast.With increasing the light-exposure to the threshold,the lattice relaxation of metal cations adjacent to the doubly ionized oxygen vacancies(V O^2+)is fully developed,and the PPC barrier increases to∼0.25 eV,which remains basically unchanged under higher light-exposure.Based on the density of V O defects in the channel and the condition of light illumination,a unified model of formation of photo-induced metastable defects in a-IGZO TFTs is proposed to explain the experimental observations.展开更多
In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain(S/D) series resistance in operating amorphous indium–gallium–zinc–oxide(a-IGZO) thin-film transist...In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain(S/D) series resistance in operating amorphous indium–gallium–zinc–oxide(a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metalsemiconductor junction.展开更多
基金supported by Grant RGC 16215720 from the Science and Technology Program of Shenzhen under JCYJ20200109140601691Grant GHP/018/21SZ from the Innovation and Technology Fund+1 种基金Grant SGDX20211123145404006 from the Science and Technology Program of ShenzhenFundamental and Applied Fundamental Research Fund of Guangdong Province 2021B1515130001。
文摘Here we review two 300℃metal–oxide(MO)thin-film transistor(TFT)technologies for the implementation of flexible electronic circuits and systems.Fluorination-enhanced TFTs for suppressing the variation and shift of turn-on voltage(VON),and dual-gate TFTs for acquiring sensor signals and modulating VON have been deployed to improve the robustness and performance of the systems in which they are deployed.Digital circuit building blocks based on fluorinated TFTs have been designed,fabricated,and characterized,which demonstrate the utility of the proposed low-temperature TFT technologies for implementing flexible electronic systems.The construction and characterization of an analog front-end system for the acquisition of bio-potential signals and an active-matrix sensor array for the acquisition of tactile images have been reported recently.
基金supported by National Key Research and Development Program under Grant No.2022YFB3607100Shenzhen Research Programs under Grant Nos.JCYJ20200109140601691,JCYJ20190808154803565,SGDX20201103095607022,SGDX20211123145404006,and GXWD20201231165807007-20200807025846001。
文摘As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this work,the triggering voltage of HCS-induced self-heating(SH)degradation is defined in the output characteristics of amorphous indium-galliumzinc oxide(a-IGZO)TFTs,and used to quantitatively evaluate the thermal generation process of channel donor defects.The fluorinated a-IGZO(a-IGZO:F)was adopted to effectively retard the triggering of the self-heating(SH)effect,and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F.The proposed scheme noticeably enhances the high-current applications of oxide TFTs.
基金Project supported by the National Natural Science Foundation of China (Grant No.61874029)。
文摘Amorphous In–Ga–Zn–O(a-IGZO)thin-film transistor(TFT)memories with novel p-SnO/n-SnO_(2) heterojunction charge trapping stacks(CTSs)are investigated comparatively under a maximum fabrication temperature of 280℃.Compared to a single p-SnO or n-SnO_(2) charge trapping layer(CTL),the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention.Of the two CTSs,the tunneling layer/p-SnO/nSnO_(2)/blocking layer architecture demonstrates much higher program efficiency,more robust data retention,and comparably superior erase characteristics.The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at-8 V/1 ms,and the ten-year memory window is extrapolated to be 4.41 V.This is attributed to shallow traps in p-SnO and deep traps in n-SnO_(2),and the formation of a built-in electric field in the heterojunction.
基金financially supported in part by Shenzhen Municipal Research Program(Grant NO.SGDX20211123145404006)in part by National Natural Science Foundation of China(Grant NO.62274111)+1 种基金in part by Guangdong Basic and Applied Basic Research Foundation(Grant NO.2021A1515011858)in part by Innovation and Technology Fund of Hong Kong(Grant NO.GHP/018/21SZ)。
文摘Indium-tin-zinc oxide(ITZO)thin-film transistor(TFT)technology holds promise for achieving high mobility and offers significant opportunities for commercialization.This paper provides a review of progress made in improving the mobility of ITZO TFTs.This paper begins by describing the development and current status of metal-oxide TFTs,and then goes on to explain the advantages of selecting ITZO as the TFT channel layer.The evaluation criteria for TFTs are subsequently introduced,and the reasons and significance of enhancing mobility are clarified.This paper then explores the development of high-mobility ITZO TFTs from five perspectives:active layer optimization,gate dielectric optimization,electrode optimization,interface optimization,and device structure optimization.Finally,a summary and outlook of the research field are presented.
基金The authors are grateful for the financial support from the National Natural Science Foundation of China(Grant No.62074075,61834001)the National Key R&D Program of China(Grant No.2019YFB2205400).
文摘Since the invention of amorphous indium-gallium-zinc-oxide(IGZO)based thin-film transistors(TFTs)by Hideo Hosono in 2004,investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electrical performance,large-area uniformity,and low processing temperature.This article reviews the recent progress and major trends in the field of IGZO-based TFTs.After a brief introduction of the history of IGZO and the main advantages of IGZO-based TFTs,an overview of IGZO materials and IGZO-based TFTs is given.In this part,IGZO material electron travelling orbitals and deposition methods are introduced,and the specific device structures and electrical performance are also presented.Afterwards,the recent advances of IGZO-based TFT applications are summarized,including flat panel display drivers,novel sensors,and emerging neuromorphic systems.In particular,the realization of flexible electronic systems is discussed.The last part of this review consists of the conclusions and gives an outlook over the field with a prediction for the future.
基金supported by the National Natural Science Foundation of China(Grant Nos.61076113 and 61274085)the Research Grants Council of Hong Kong,China(Grant No.7133/07E)
文摘The positive gate-bias temperature instability of a radio frequency (RF) sputtered ZnO thin-film transistor (ZnO TFT) is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state current decrease, and the threshold voltage shifts toward the positive direction. The stress amplitude and stress temperature are considered as important factors in threshold-voltage instability, and the time dependences of threshold voltage shift under various bias temperature stress conditions could be described by a stretched-exponential equation. Based on the analysis of hysteresis behaviors in current- voltage and capacitance-voltage characteristics before and after the gate-bias stress, it can be clarified that the threshold- voltage shift is predominantly attributed to the trapping of negative charge carriers in the defect states located at the gate- dielectric/channel interface.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.61290305 and 91021020)the Natural Science Foundation of Zhejiang Province,China (Grant No.Z6100117)
文摘Annealing effect on the performance of fully transparent thin-film transistor (TTFT), in which zinc tin oxide (ZnSnO) is used as the channel material and SiO2 as the gate insulator, is investigated. The ZnSnO active layer is deposited by radio frequency magnetron sputtering while a SiO2 gate insulator is formed by plasma-enhanced chemical vapor deposition. The saturation field-effect mobility and on/off ratio of the TTFT are improved by low temperature annealing in vacuum. Maximum saturation field-effect mobility and on/off ratio of 56.2 cm2/(V.s) and 3×10^5 are obtained, respectively. The transfer characteristics of the ZnSnO TPT are simulated using an analytical model and good agreement between measured and the calculated transfer characteristics is demonstrated.
基金This work was supported in part by the National Science Foundation through grant CNS-1726865 and by the USDA under grant 2019-67021-28990.
文摘Equipped with a two-dimensional topological structure,a group of masses,springs and dampers can be demonstrated to model the internal dynamics of a thin-film transistor(TFT).In this paper,the two-dimensional Mass-Spring-Damper(MSD)representation of an inverted staggered TFT is proposed to explore the TFT’s internal stress/strain distributions,and the stress-induced effects on TFT’s electrical characteristics.The 2DMSD model is composed of a finite but massive number of interconnected cellular units.The parameters,such as mass,stiffness,and damping ratios,of each cellular unit are approximated from constitutive equations of the compositematerials,while the electrical properties of the inverted staggered TFT are characterized by utilizing an electro-mechanical coupling relation derived from the quantum mechanics.TFTs are often used in biomedical sensors/transducers attached to human skins,and,for the purpose of simulation and validation,the boundary conditions on the interface between the TFT and the human skin were modeled as a spatially distributed sinusoidal excitation with a frequency of 50 Hz,assuming the TFT thickness is more than tens of microns.The fidelity of the 2D MSD structure in the modeling of an inverted staggered TFT is verified by comparing its simulated total displacement fieldwith that of a finite element analysis(FEA)model.The advantages of the MSD model include a dramatic reduction in memory use by up to 60%and faster computation times that are up to 80%lower.More importantly,the MSD model is better suited than FEA to many problems in accurate tissue modeling for medical applications,for which FEA is becoming a bottleneck.This work develops a novel modeling approach,which can be extended to other types of flexible thin film transistors.
基金This work was supported by the Competitive Research Program(Award No.NRF-CRP13-2014-02),RIE2020 ASTAR AME IAF-ICP(I1801E0030)Campus for Research Excellence and Technological Enterprise(CREATE)that was supported by the National Research Foundation,Prime Minister’s Office,Singapore+1 种基金Q.W.S.thanks to the Natural Science Foundation of China(52003122)the"Longshan scholar"start-up foundation of NUIST.
文摘Flexible thin-film transistors(TFTs)have attracted wide interest in the development of flexible and wearable displays or sensors.However,the conventional high processing temperatures hinder the preparation of stable and reliable dielectric materials on flexible substrates.Here,we develop a stable laminated Al_(2)O_(3)/HfO_(2) insulator by atomic layer deposition at a relatively lower temperature of 150℃.A sputtered amorphous indium-gallium-zinc oxide(IGZO)with the stoichiometry of In_(0.37)Ga_(0.20)Zn_(0.18)O_(0.25) is used as the active channel material.The flexible TFTs with bottom-gate top-contacted configuration are further fabricated on a flexible polyimide substrate with the Al_(2)O_(3)/HfO_(2) nanolaminates.Benefited from the unique structural and compositional configuration in the nanolaminates consisting of amorphous Al_(2)O_(3),crystallized HfO_(2),and the aluminate Al-Hf-O phase,the as-prepared TFTs present the carrier mobilities of 9.7 cm^(2) V^(−1) s^(−1),ON/OFF ratio of-1.3×10^(6),subthreshold voltage of 0.1 V,saturated current up to 0.83 mA,and subthreshold swing of 0.256 V dec^(−1),signifying a high-performance flexible TFT,which simultaneously able to withstand the bending radius of 40 mm.The TFTs with nanolaminate insulator possess satisfactory humidity stability and hysteresis behavior in a relative humidity of 60-70%,a temperature of 25-30℃ environment.The yield of IGZO-based TFTs with the nanolaminate insulator reaches 95%.
基金Supported by the National Key Research and Development Program of China under Grant No 2017YFA0204600the National Natural Science Foundation of China under Grant No 61404002the Science and Technology Project of Hunan Province under Grant No 2015JC3041
文摘An analytical model for current-voltage behavior of amorphous In-Ga-Zn-O thin-film transistors(a-IGZO TFTs)with dual-gate structures is developed.The unified expressions for synchronous and asynchronous operating modes are derived on the basis of channel charges,which are controlled by gate voltage.It is proven that the threshold voltage of asynchronous dual-gate IGZO TFTs is adjusted in proportion to the ratio of top insulating capacitance to the bottom insulating capacitance(C_(TI)/C_(BI)).Incorporating the proposed model with Verilog-A,a touch-sensing circuit using dual-gate structure is investigated by SPICE simulations.Comparison shows that the touch sensitivity is increased by the dual-gate IGZO TFT structure.
基金Project supported by the National Basic Research Program of China(Grant Nos.2011CB301900 and 2011CB922100)the Priority Academic Program Development of Jiangsu Higher Education Institutions,China
文摘The time and temperature dependence of threshold voltage shift under positive-bias stress(PBS) and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide(a-IGZO) thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτ stress= 0.72 eV for the PBS process and an average effective energy barrier Eτ recovery= 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development.
基金Project supported by the National Natural Science Foundation of China(Grants Nos.61306011,11274366,51272280,11674405,and 11675280)
文摘Flexible and transparent electronics enters into a new era of electronic technologies.Ubiquitous applications involve wearable electronics,biosensors,flexible transparent displays,radio-frequency identifications(RFIDs),etc.Zinc oxide(ZnO) and relevant materials are the most commonly used inorganic semiconductors in flexible and transparent devices,owing to their high electrical performances,together with low processing temperatures and good optical transparencies.In this paper,we review recent advances in flexible and transparent thin-film transistors(TFTs) based on ZnO and relevant materials.After a brief introduction,the main progress of the preparation of each component(substrate,electrodes,channel and dielectrics) is summarized and discussed.Then,the effect of mechanical bending on electrical performance is highlighted.Finally,we suggest the challenges and opportunities in future investigations.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61474027 and 61376008
文摘High-performance thin-film transistors (TFTs) with a low thermal budget are highly desired for flexible electronic applications. In this work, the TFTs with atomic layer deposited ZnO-channel/Al2O3-dielectric are fabricated under the maximum process temperature of 200℃. First, we investigate the effect of post-annealing environment such as N2, H2-N2 (4%) and O2 on the device performance, revealing that o2 annealing can greatly enhance the device performance. Further, we compare the influences of annealing temperature and time on the device performance. It is found that long anneMing at 200℃is equivalent to and even outperforms short annealing at 300℃. Excellent electrical characteristics of the TFTs are demonstrated after 02 anneMing at 200℃ for 35 rain, including a low off-current of 2.3 × 10-13 A, a small sub-threshold swing of 245 m V/dec, a large on/off current ratio of 7.6×10s, and a high electron effective mobility of 22.1cm2/V.s. Under negative gate bias stress at -10 V, the above devices show better electrical stabilities than those post-annealed at 300℃. Thus the fabricated high-performance ZnO TFT with a low thermal budget is very promising for flexible electronic applications.
基金Project supported by the National Natural Science Foundation of China(Grant No.61675024)the National Basic Research Program of China(Grant No.2014CB643600)
文摘In this study,indium oxide(In2O3) thin-film transistors(TFTs) are fabricated by two kinds of low temperature solution-processed technologies(Ta ≤ 300℃),i.e.,water-based(DIW-based) process and alkoxide-based(2-ME-based)process.The thickness values,crystallization properties,chemical structures,surface roughness values,and optical properties of In2O3 thin-films and the electrical characteristics of In2O3 TFTs are studied at different annealing temperatures.Thermal annealing at higher temperature leads to an increase in the saturation mobility(μsat) and a negative shift in the threshold voltage(VTH).The DIW-based processed In2O3-TFT annealed at 300℃ exhibits excellent device performance,and one annealed at 200℃ exhibits an acceptable μsat of 0.86 cm^2/V·s comparable to that of a-Si:H TFTs,whereas the 2-ME-based TFT annealed at 300℃ exhibits an abundant μsat of 1.65 cm^2/Vs and one annealed at 200℃ is inactive.The results are attributed to the fact that the DIW-based process induces a higher degree of oxidation and less defect states than the 2-ME-based process at the same temperature.The DIW-based process for fabricating the In2O3 TFT opens the way for the development of nontoxic,low-cost,and low-temperature oxide electronics.
基金Project supported by the National Natural Science Foundation of China(Grant No.6140031454)the Innovation Program of Chinese Academy of Sciences and State Key Laboratory of Luminescence and Applications
文摘Strontium-zinc-oxide(SrZnO) films forming the semiconductor layers of thin-film transistors(TFTs) are deposited by using ion-assisted electron beam evaporation. Using strontium-oxide-doped semiconductors, the off-state current can be dramatically reduced by three orders of magnitude. This dramatic improvement is attributed to the incorporation of strontium, which suppresses carrier generation, thereby improving the TFT. Additionally, the presence of strontium inhibits the formation of zinc oxide(ZnO) with the hexagonal wurtzite phase and permits the formation of an unusual phase of ZnO, thus significantly changing the surface morphology of ZnO and effectively reducing the trap density of the channel.
基金Project supported in part by the National Natural Science Foundation of China(Grant Nos.61971299 and 61974101)the Natural Science Foundation of Jiangsu Province,China(Grant No.SBK2020021406)+2 种基金the Fund from the State Key Laboratory of ASIC and System,Fudan University(Grant No.2019KF007)the Fund from the Suzhou Science and Technology Bureau(Grant No.SYG201933)the Fund from the Jiangsu Higher Education Institute of China(Grant No.19KJB510058).
文摘A new type of degradation phenomena featured with increased subthreshold swing and threshold voltage after negative gate bias stress(NBS)is observed for amorphous InGaZnO(a-IGZO)thin-film transistors(TFTs),which can recover in a short time.After comparing with the degradation phenomena under negative bias illumination stress(NBIS),positive bias stress(PBS),and positive bias illumination stress(PBIS),degradation mechanisms under NBS is proposed to be the generation of singly charged oxygen vacancies(V_(o)^(+))in addition to the commonly reported doubly charged oxygen vacancies(V_(o)^(2+)).Furthermore,the NBS degradation phenomena can only be observed when the transfer curves after NBS are measured from the negative gate bias to the positive gate bias direction due to the fast recovery of V_(o)^(+)under positive gate bias.The proposed degradation mechanisms are verified by TCAD simulation.
基金supported by the National High Technology Research and Development Program of China (Grant No 2006AA03Z0412)the National Natural Science Foundation of China (Grant Nos 10774013 and 10804006)+4 种基金the Excellent Doctor’s Science and Technology Innovation Foundation of Beijing Jiaotong University (Grant No 48024)the Foundation of Beijing Jiaotong University (Grant No 2005SM057)the Research Fund for the Youth Scholars of the Doctoral Program of Higher Education (Grant No 20070004031)the Beijing NOVA program (Grant No 2007A024)Sponsored by the Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Education Ministry
文摘The properties of top-contact organic thin-film transistors (TC-OTFTs) using ultra-thin 2, 9-dimethyl-4, 7- diphenyl-1, 10-phenanthroline (BCP) as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer. This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels. The accumulation and transfer of the hole carriers arc limited by the BCP interlayer in the vertical region of the channel. A huge amount of carriers is located not only at the interface between pentacene and the gate insulator, but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator, respectively. The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer, and can increase the hole mobility and output current of OTFTs. The TC-OTFTs with a BCP interlayer at VDS = --20 V showed excellent hole mobility μFE and threshold voltage VTH of 0.58 cm^2/(V-s) and -4.6 V, respectively.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61971299 and 61974101)the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20201201)+1 种基金the Fund from Suzhou Science and Technology Bureau(Grant No.SYG201933)the Fund from the State Key Laboratory of ASIC and System,Fudan University(Grant No.2021KF005)
文摘The negative gate bias stress(NBS)reliability of n-type polycrystalline silicon(poly-Si)thin-film transistors(TFTs)with a distinct defective grain boundary(GB)in the channel is investigated.Results show that conventional NBS degradation with negative shift of the transfer curves is absent.The on-state current is decreased,but the subthreshold characteristics are not affected.The gate bias dependence of the drain leakage current at V_(ds)of 5.0 V is suppressed,whereas the drain leakage current at V_(ds)of 0.1 V exhibits obvious gate bias dependence.As confirmed via TCAD simulation,the corresponding mechanisms are proposed to be trap state generation in the GB region,positive-charge local formation in the gate oxide near the source and drain,and trap state introduction in the gate oxide.
基金Project supported in part by the National Natural Science Foundation of China(Grant Nos.61974101 and 61971299)the State Key Laboratory of ASIC and System,Fudan University(Grant No.2019KF007)+2 种基金the Natural Science Foundation of Jiangsu Province,China(Grant No.SBK2020021406)the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(Grant No.19KJB510058)the Suzhou Science and Technology Bureau(Grant No.SYG201933).
文摘Persistent photoconductivity(PPC)effect and its light-intensity dependence of both enhancement and depletion(E-/D-)mode amorphous InGaZnO(a-IGZO)thin-film transistors(TFTs)are systematically investigated.Density of oxygen vacancy(V O)defects of E-mode TFTs is relatively small,in which formation of the photo-induced metastable defects is thermally activated,and the activation energy(E a)decreases continuously with increasing light-intensity.Density of V O defects of D-mode TFTs is much larger,in which the formation of photo-induced metastable defects is found to be spontaneous instead of thermally activated.Furthermore,for the first time it is found that a threshold dose of light-exposure is required to form fully developed photo-induced metastable defects.Under low light-exposure below the threshold,only a low PPC barrier is formed and the PPC recovery is fast.With increasing the light-exposure to the threshold,the lattice relaxation of metal cations adjacent to the doubly ionized oxygen vacancies(V O^2+)is fully developed,and the PPC barrier increases to∼0.25 eV,which remains basically unchanged under higher light-exposure.Based on the density of V O defects in the channel and the condition of light illumination,a unified model of formation of photo-induced metastable defects in a-IGZO TFTs is proposed to explain the experimental observations.
基金Project supported by the Key Industrial R&D Program of Jiangsu Province,China(Grant No.BE2015155)the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province,Chinathe Fundamental Research Funds for the Central Universities,China(Grant No.021014380033)
文摘In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain(S/D) series resistance in operating amorphous indium–gallium–zinc–oxide(a-IGZO) thin-film transistors. The asymmetry behavior of S/D contact resistance is deduced and the underlying physics is discussed. The present results suggest that the asymmetry of S/D contact resistance is caused by the difference in bias conditions of the Schottky-like junction at the contact interface induced by the parasitic reaction between contact metal and a-IGZO. The overall contact resistance should be determined by both the bulk channel resistance of the contact region and the interface properties of the metalsemiconductor junction.