Comparison of Threshold Power between Methylene Blue Degradation and KI Oxidation Reaction Using Ultrasound

Ultrasound is used in various chemical reaction processes, and these reactions are influenced by ultrasonic frequency. A threshold power is required for the ultrasonic degradation reaction and oxidation reaction caused by hydroxyl radicals, and the cavitation threshold power is also influenced by frequency generally. In this study, the effects of frequency on the threshold power of methylene blue degradation and KI oxidation were investigated in the range between 22.8 kHz and 1640 kHz. The threshold power of KI oxidation reaction increased with increasing frequency. This phenomenon well agrees with previous study, and it is revealed that the generation of I-3?ion is caused by oxidation reaction of Iˉ ions with hydroxyl radicals. On the other hand, the threshold power of methylene blue degradation reaction was not affected by frequency. The ultrasonic degradation of methylene blue is considered to be caused by hydroxyl radicals, and there is a linear relationship between degradation rate constant and sonochemical efficiency value. However, it is guessed that the degradation of methylene blue is occurred inside cavitation bubble by pyrolysis at high frequency regions.

Production threshold impact on a GEANT4 calculation of the power deposition in a fast domain: MEGAPIE spallation target

The calculation time in the Monte Carlo simulations consistently represents an essential issue. It is often very long, and its decrease constitutes a challenge for the simulator. Generally, an MC simulation is qualified as quality or not according to two main criteria: the calculation time and the accuracy of the results. However, in most cases, the optimization of one criterion affects negatively the other. Therefore, a compromise between both of them is always required in this kind of simulation. The present work aims at studying the impact of the production threshold(or cut) of the GEANT4 toolkit on the calculation of the power deposition in the MEGAPIE spallation target.The production threshold of secondaries is a GEANT4 intrinsic parameter. It indicates the limit of energy we can reach in the production of secondary particles. This study has allowed us to make the following conclusions. First,the influence of the cut on the calculation of the deposited power depends on the volume size, its arrangement and the importance of the electromagnetic processes occurring within. Second, the accuracy of the calculations can be acceptable only below a given value of the cut energy.Third, this accuracy remains almost unchangeable from a certain value of the cut. The study has also made it possible to explore the prevalence of certain interactions in the zone of spallation in the MEGAPIE target.

A new model of the L–H transition and H-mode power threshold

In order to understand the mechanism of the confinement bifurcation and H-mode power threshold in magnetically confined plasma,a new dynamical model of the L-H transition based on edge instability phase transition（EIPT） has been developed.With the typical plasma parameters of the EAST tokamak,the self-consistent turbulence growth rate is analyzed using the simplest case of pressure-driven ballooning-type instability,which indicates that the L-H transition can be caused by the stabilization of the edge instability through EIPT.The weak E？×？B flow shear in L-mode is able to increase the ion inertia of the electrostatic motion by increasing the radial wave number of the tilted turbulence structures,which play an important role for accelerating the trigger process of EIPT rather than directly to suppress the turbulent transport.With the acceleration mechanism of E？×？B flow shear,fast L-H and H-L transitions are demonstrated under the control of the input heating power.Due to the simplified scrape-offlayer boundary condition applied,the ratio between the heating powers at the H-L and L-H transition respectively differs from the ratio by Nusselt number.The results of the modeling reveal a scaling of the power threshold of the L-H transition,P_（L-H）？∝？n^（0.76） B^（0.8） for deuterium plasma.It is found finite Larmor radius induces an isotope effect of the H-mode power threshold.

Analytical Expression of the Threshold Pump Power of Erbium－doped Fiber Lasers Pumped at 980nm and 1480nm Wavelengths

The rate equations,which is suitable to erbium-doped fiber lasers pumped at 980 nm and 1 480nm wavelengths respectively,are investigated,and analytical expressions of the threshold pump powers under two pump wavelengths are derived.As a result,some important parameters can be quantitatively specified.

Development of Surface Grating Distributed Feedback Quantum Cascade Laser for High Output Power and Low Threshold Current Density

We report on the room-temperature cascade laser （QCL） at λ -4.7μm. cw operation of a surface grating Both grating design and material distributed feedback （DFB） quantum optimization are used to decrease the threshold current density and to increase the output power. For a high-reflectivity-coated 13-μm-wide and 4- mm-long laser, high wall-plug efficiency of 6% is obtained at 20℃ from a single facet producing over I W of ew output power. The threshold current density of DFB QCL is as low as 1.13kA/cm^2 at 10℃ and 1.34kA/cm2 at 30℃ in cw mode. Stable single-mode emission with a side-mode suppression ratio of about 30 dB is observed in tile working temperature range of 20-50℃.

电能质量扰动的Block-Thresholding去噪方法

提出一种基于block-thresholding阈值估计量的电能质量扰动小波去噪算法。在小波域,各个尺度携带信号信息的小波系数其分布具有"簇聚"性质,即大部分系数成簇聚集在信号突变位置。所提算法将各个尺度的小波系数分成若干块,针对各个块进行阈值处理;而不像传统的小波阈值去噪算法,如Donoho等提出的VisuShrink那样预先确定一个阈值,对所有小波系数逐项比较进行去留处理。将所提算法与传统阈值去噪方法进行比较研究,仿真和实验结果表明所提算法在全局适应性和空间适应性方面的优越性。

不同型号的星用Power MOSFET的辐射响应特性

利用60Co源对将应用于空间系统的两种Power MOSFET进行了不同总剂量辐照实验,并从微观氧化物陷阱电荷和界面态的辐射感生角度,对比分析了不同型号Power MOSFET器件在60Coγ射线辐射下的总剂量效应以及辐照后100℃下退火特性,并侧重分析了总剂量实验中阈值电压和击穿电压的变化关系。为此类器件在航天系统中的应用提供了辐照数据基础和依据。

Three-dimensional simulation method of multipactor in microwave components for high-power space application

Based on the particle-in-cell technology and the secondary electron emission theory, a three-dimensional simulation method for multipactor is presented in this paper. By combining the finite difference time domain method and the panicle tracing method, such an algorithm is self-consistent and accurate since the interaction between electromagnetic fields and particles is properly modeled. In the time domain aspect, the generation of multipactor can be easily visualized, which makes it possible to gain a deeper insight into the physical mechanism of this effect. In addition to the classic secondary electron emission model, the measured practical secondary electron yield is used, which increases the accuracy of the algorithm. In order to validate the method, the impedance transformer and ridge waveguide filter are studied. By analyzing the evolution of the secondaries obtained by our method, multipactor thresholds of these components are estimated, which show good agreement with the experimental results. Furthermore, the most sensitive positions where multipactor occurs are determined from the phase focusing phenomenon, which is very meaningful for multipactor analysis and design.

High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers

A high power GaSb-based laser diode with lasing wavelength at 2 μm was fabricated and optimized. With the optimized epitaxial laser structure, the internal loss and the threshold current density decreased and the internal quantum efficiency increased. For uncoated broad-area lasers, the threshold current density was as low as 144 A/cm2 （72 A/cm^2 per quantum well）, and the slope efficiency was 0.2 W/A. The internal loss was 11 cm^-1 and the internal quantum efficiency was 27.1%. The maximum output power of 357 mW under continuous-wave operation at room temperature was achieved. The electrical and optical properties of the laser diode were improved.

An Improved SOI CMOS Technology Based Circuit Technique for Effective Reduction of Standby Subthreshold Leakage

Silicon-on-insulator (SOI) CMOS technology is a very attractive option for implementing digital integrated circuits for low power applications. This paper presents migration of standby subthreshold leakage control technique from a bulk CMOS to SOI CMOS technology. An improved SOI CMOS technology based circuit technique for effective reduction of standby subthreshold leakage power dissipation is proposed in this paper. The proposed technique is validated through design and simulation of a one-bit full adder circuit at a temperature of 27℃, supply voltage, VDD of 0.90 V in 120 nm SOI CMOS technology. Existing standby subthreshold leakage control techniques in CMOS bulk technology are compared with the proposed technique in SOI CMOS technology. Both the proposed and existing techniques are also implemented in SOI CMOS technology and compared. Reduction in standby subthreshold leakage power dissipation by reduction factors of 54x and 45x foraone-bit full adder circuit was achieved using our proposed SOI CMOS technology based circuit technique in comparison with existing techniques such as MTCMOS technique and SCCMOS technique respectively in CMOS bulk technology. Dynamic power dissipation was also reduced significantly by using this proposed SOI CMOS technology based circuit technique. Standby subthreshold leakage power dissipation and dynamic power dissipation were also reduced significantly using the proposed circuit technique in comparison with other existing techniques, when all circuit techniques were implemented in SOI CMOS technology. All simulations were performed using Microwindver 3.1 EDA tool.

Characterization of a Novel Low-Power SRAM Bit-Cell Structure at Deep Sub-Micron CMOS Technology for Multimedia Applications

To meet the increasing demands for higher performance and low-power consumption in present and future Systems-on-Chips (SoCs) require a large amount of on-die/embedded memory. In Deep-Sub-Micron (DSM) technology, it is coming as challenges, e.g., leakage power, performance, data retentation, and stability issues. In this work, we have proposed a novel low-stress SRAM cell, called as IP3 SRAM bit-cell, as an integrated cell. It has a separate write sub-cell and read sub-cell, where the write sub-cell has dual role of data write and data hold. The data read sub-cell is proposed as a pMOS gated ground scheme to further reduce the read power by lowering the gate and subthreshold leakage currents. The drowsy voltage is applied to the cell when the memory is in the standby mode. Further, it utilizes the full-supply body biasing scheme while the memory is in the standby mode, to further reduce the subthreshold leakage current to reduce the overall standby power. To the best of our knowledge, this low-stress memory cell has been proposed for the first time. The proposed IP3 SRAM Cell has a significant write and read power reduction as compared to the conventional 6 T and PP SRAM cells and overall improved read stability and write ability performances. The proposed design is being simulated at VDD = 0.8 V and 0.7 V and an analysis is presented here for 0.8 V to adhere previously reported works. The other design parameters are taken from the CMOS technology available on 45 nm with tOX = 2.4 nm, Vthn = 0.224 V, and Vthp = 0.24 V at T = 27?C.

Correlation between Coating Adhesion and Damage Threshold: Simple Method of Reliability Assessment for Optoelectronic Applications

It is demonstrated that inherent coating adhesion and damage threshold are correlated for Ta2O5 and HfO2 coatings widely used in optoelectronic devices. By utilizing a newly proposed 1-h boiling water test combined with the optical aging under high-power laser irradiation, we show that an optical coating that survives the 1-h boiling water test withstands the damage threshold, ensuring the field service life even in harsh environments. Besides the standard evaluation methods, which may have limitations for applications required in harsh environments, the 1-h boiling water test can serve as an alternative method of reliability assessment for optical coatings. A heuristics herein can be used as a gating item for qualification of optical coatings for various applications.

SRAM Cell Leakage Control Techniques for Ultra Low Power Application: A Survey

Low power supply operation with leakage power reduction is the prime concern in modern nano-scale CMOS memory devices. In the present scenario, low leakage memory architecture becomes more challenging, as it has 30% of the total chip power consumption. Since, the SRAM cell is low in density and most of memory processing data remain stable during the data holding operation, the stored memory data are more affected by the leakage phenomena in the circuit while the device parameters are scaled down. In this survey, origins of leakage currents in a short-channel device and various leakage control techniques for ultra-low power SRAM design are discussed. A classification of these approaches made based on their key design and functions, such as biasing technique, power gating and multi-threshold techniques. Based on our survey, we summarize the merits and demerits and challenges of these techniques. This comprehensive study will be helpful to extend the further research for future implementations.

Design of Ultra-Low Power PMOS and NMOS for Nano Scale VLSI Circuits

CMOS devices play a major role in most of the digital design, since CMOS devices have larger density and consume less power. The integrated circuit performance mostly depends on the basic devices and its scaling methods, but in conventional CMOS devices in ultra deep submicron technology, leakage power becomes the major portion apart of dynamic power. The demerits of the conventional CMOS is less speed and, more leakage, for any digital design PDP is the figure of merit which can be used to determine energy consumed per switching event, hence we designed a NOVEL NMOS and PMOS which has superior performance than conventional PMOS and NMOS, the design and performance checked at 90 nm, 180 nm and 45 nm technology and calculate the performance values.

煤矿井下爆炸性环境下电磁波热效应的安全性研究

GB/T 3836.1—2021《爆炸性环境第1部分:设备通用要求》规定爆炸性环境中射频设备的阈功率不得大于6 W,该规定限制了大功率射频设备在煤矿井下的应用,而现有针对爆炸性环境电磁安全性的相关研究缺乏完善的理论分析和实验验证。针对上述问题,推导了电磁波热效应方程,分析得出影响电磁波耦合瓦斯和煤尘混合气体产生热能的可控参数为电磁波耦合时间、电场强度和电磁波频率。以GB/T 3836.1—2021中可能堆积煤尘的电气设备表面温度最高不能超过150℃的规定为依据,采用多物理场仿真软件COMSOL对不同发射功率的电磁波耦合瓦斯和煤尘混合气体的热效应安全性进行了仿真实验,结果表明:满足温度不超过150℃的电磁波热效应安全阈发射功率为16.48 W;随着电磁波发射功率的增加,电磁波热效应安全时长(电磁波耦合瓦斯和煤尘混合气体产生的热能不会使环境温度超过150℃对应的时间段)逐渐减少,但只要在安全时长内,电磁波的发射功率不受限制。

Investigation of high power laser coatings

High laser-induced damage threshold and large aperture were focuses on the studies of high power laser coatings. This paper reports the research activities at our center. Several measures were developed for evaluating characters of laser damage, including determination of laser induced damage threshold and detection of absorption based on surface thermal lensing technique. Defect was deemed to be the initial source of laser damage, and was the main factor restricting the laser damage resistance of optical coatings. The contribution of several kinds of typical defects to laser damage was analyzed, and some deposition measures were adopted to control and eliminate the origin of defect. Furthermore, some post-treatment methods were also employed to alleviate the influence of the defect and to improve the laser damage resistance. Correction mask was introduced to improve the thickness uniformity, and the thickness uniformity can be amended to less than 1% in the range of Φ650 mm. Preliminary investigation related to surface deformation was also conducted.

基于条件预充电技术的低功耗真单相时钟触发器

基于条件预充电技术,设计了一种高速低功耗真单相时钟触发器。在存在冗余开关活动的关键路径中,通过增加场效应管和控制条件,控制内部节点的冗余预充电活动;通过消除冗余结构,消除冗余的场效应管,从而改善电路结构,降低功耗和总功耗延时积。通用电路分析程序(simulation program with integrated circuit emphasis,HSPICE)仿真结果表明,在100 MHz的工作频率与低阈值电压下,触发器功耗低至158.6127 nW、总功耗延时积低至0.048735 fJ,电路具有正确的逻辑功能,且在功耗、延迟方面均优于近几年提出的电路。

水导激光烧蚀碳化硅仿真与实验研究

目的探究碳化硅水导激光加工烧蚀机理。方法采用实验与仿真相结合的方式对碳化硅烧蚀过程进行研究分析。结果水射流持续冷却作用极大地降低了碳化硅加工过程中的热累积效应,通过烧蚀阈值计算方法得到了多脉冲水导激光烧蚀碳化硅功率阈值(约为0.1565 W),烧蚀阈值基本不随脉冲数的改变而发生波动。通过对碳化硅刻蚀形貌进行分析发现,烧蚀宽度随着脉冲数整体在3.1~4.1μm之间波动,基本不受脉冲数的影响,烧蚀深度随着脉冲数的增加而增大,但随着烧蚀深度的增加,水导激光烧蚀能力逐渐被削弱,适当增加激光功率可以抑制水导激光烧蚀能力减弱的趋势,通过较大的激光功率更易加工出深宽比较大的沟槽。确定了碳化硅烧蚀功率与烧蚀直径之间的等量关系,通过激光功率能够合理预测烧蚀宽度,经与实验结果进行对比发现较符合,这也间接说明脉冲数对于水导激光烧蚀直径不是主要影响因素。碳化硅水导激光刻蚀截面呈现倒梯形,由于水射流冲刷作用的存在,重凝物质无法富集在材料表面,使得SiC烧蚀表面与未烧蚀区域之间过渡较为平滑,沟槽侧壁带状条纹特征也证实了水射流冲刷作用的存在。结论水射流冷却及冲刷作用的存在,使得水导激光在加工硬脆性材料具有独特的优势,能够实现对硬脆性材料的无裂纹及无热影响区加工。

针对多目标跟踪的组网雷达检测门限与功率分配联合优化算法

为了提升组网雷达多目标跟踪(MTT)时的射频隐身性能,本文研究了针对MTT的组网雷达检测门限与功率联合优化算法。首先,在采用检测跟踪一体化结构的基础上,分别推导相关波门内的平均检测概率和预测贝叶斯克拉美罗下界作为衡量目标检测性能和MTT性能的指标。其次,以有限的辐射资源和满足一定的目标检测和MTT性能为约束条件,以最小化组网雷达的总功率资源消耗为目标,建立组网雷达检测门限与功率联合优化模型,联合优化雷达节点选择方式、各雷达的检测门限和辐射功率。在此基础上,结合改进的概率数据互联算法和序贯二次规划算法求解上述问题。仿真结果表明,所提算法在满足目标检测和跟踪性能需求时有效降低组网雷达功率资源消耗,提升射频隐身性能。

普惠金融数字化、消费环境优化与农村居民消费动力释放

扩大内需、培育完整的内需体系亟需释放农村居民消费动力,普惠金融数字化是否有效释放了农村居民消费动力?消费环境优化又在其中起到什么作用?文章在系统梳理普惠金融数字化、消费环境优化与农村居民消费动力释放的关系原理基础上,利用我国2011—2021年的省际面板数据,从消费环境优化的视角出发,实证检验了普惠金融数字化对农村居民消费动力的释放作用、传导机制以及门槛效应。研究发现:普惠金融数字化对农村居民消费具有显著的正向影响,意味着普惠金融数字化促进了农村居民消费,有利于释放农村居民消费动力;普惠金融数字化可以通过促进消费环境优化进而释放农村居民消费动力,即消费环境优化是普惠金融数字化释放农村居民消费动力的传导机制;普惠金融数字化对农村居民消费动力的释放作用存在基于消费环境的门槛效应,即在消费环境的不同门槛区间范围,普惠金融数字化对农村居民消费动力的释放作用差异较为明显,随着消费环境的进一步优化,普惠金融数字化对农村居民消费动力的释放作用也会不断增强;普惠金融数字化对农村居民的生存型消费与发展享受型消费均产生了促进作用,有利于农村居民消费动力的全面释放,但相对于生存型消费,普惠金融数字化更有利于释放农村居民发展享受型消费动力,从而推动农村居民消费结构升级。文章研究结论所蕴含的政策含义包括:深耕普惠金融数字化,促进其与农村产业发展的深度融合,加强网络消费贷款与互联网金融等数字化金融产品创新,统筹区域间普惠金融数字化的协调发展,助力农村居民消费动力释放;全力推进消费环境优化,将消费环境治理聚焦于农村流通领域,构建通畅高效的农村流通设施体系,建设系统的农村消费者权益保护平台,营造安全良好的农村消费环境,充分激发农村居民消费潜能;制定差异化的居民收入提升策略,科学规划小城市与城镇协调发展,统筹解决“一老一小”人口结构问题,系统发挥农村居民收入、城镇化发展、人口年龄结构等因素的居民消费协同效应。