Chalcogenide Ovonic Threshold Switching Selector

Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or DRAM.Intel Optane,commonly referred to as three-dimensional phase change memory,stands out as one of the most promising candidates.The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch(OTS).The OTS device,which employs chalcogenide film,has thereby gathered increased attention in recent years.In this paper,we begin by providing a brief introduction to the discovery process of the OTS phenomenon.Subsequently,we summarize the key elec-trical parameters of OTS devices and delve into recent explorations of OTS materials,which are categorized as Se-based,Te-based,and S-based material systems.Furthermore,we discuss various models for the OTS switching mechanism,including field-induced nucleation model,as well as several carrier injection models.Additionally,we review the progress and innovations in OTS mechanism research.Finally,we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications,such as self-selecting memory and neuromorphic computing.

Volatile threshold switching memristor:An emerging enabler in the AIoT era

With rapid advancement and deep integration of artificial intelligence and the internet-of-things,artificial intelligence of things has emerged as a promising technology changing people’s daily life.Massive growth of data generated from the devices challenges the AIoT systems from information collection,storage,processing and communication.In the review,we introduce volatile threshold switching memristors,which can be roughly classified into three types:metallic conductive filament-based TS devices,amorphous chalcogenide-based ovonic threshold switching devices,and metal-insulator transition based TS devices.They play important roles in high-density storage,energy efficient computing and hardware security for AIoT systems.Firstly,a brief introduction is exhibited to describe the categories(materials and characteristics)of volatile TS devices.And then,switching mechanisms of the three types of TS devices are discussed and systematically summarized.After that,attention is focused on the applications in 3D cross-point memory technology with high storage-density,efficient neuromorphic computing,hardware security(true random number generators and physical unclonable functions),and others(steep subthreshold slope transistor,logic devices,etc.).Finally,the major challenges and future outlook of volatile threshold switching memristors are presented.

Impact of variations of threshold voltage and hold voltage of threshold switching selectors in 1S1R crossbar array

The impact of the variations of threshold voltage（Vth） and hold voltage（Vhold） of threshold switching（TS） selector in1 S1 R crossbar array is investigated. Based on ON/OFF state I–V curves measurements from a large number of Ag-filament TS selectors, Vthand Vholdare extracted and their variations distribution expressions are obtained, which are then employed to evaluate the impact on read process and write process in 32×32 1 S1 R crossbar array under different bias schemes. The results indicate that Vthand Vholdvariations of TS selector can lead to degradation of 1 S1 R array performance parameters,such as minimum read/write voltage, bit error rate（BER）, and power consumption. For the read process, a small Vhold variation not only results in the minimum read voltage increasing but it also leads to serious degradation of BER. As the standard deviation of Vholdand Vthincreases, the BER and the power consumption of 1 S1 R crossbar array under 1/2 bias,1/3 bias, and floating scheme degrade, and the case under 1/2 bias tends to be more serious compared with other two schemes. For the write process, the minimum write voltage also increases with the variation of Vholdfrom small to large value. A slight increase of Vthstandard deviation not only decreases write power efficiency markedly but also increases write power consumption. These results have reference significance to understand the voltage variation impacts and design of selector properly.

Oscillation neuron based on a low-variability threshold switching device for high-performance neuromorphic computing

Low-power and low-variability artificial neuronal devices are highly desired for high-performance neuromorphic computing.In this paper,an oscillation neuron based on a low-variability Ag nanodots(NDs)threshold switching(TS)device with low operation voltage,large on/off ratio and high uniformity is presented.Measurement results indicate that this neuron demonstrates self-oscillation behavior under applied voltages as low as 1 V.The oscillation frequency increases with the applied voltage pulse amplitude and decreases with the load resistance.It can then be used to evaluate the resistive random-access memory(RRAM)synaptic weights accurately when the oscillation neuron is connected to the output of the RRAM crossbar array for neuromorphic computing.Meanwhile,simulation results show that a large RRAM crossbar array(>128×128)can be supported by our oscillation neuron owing to the high on/off ratio(>10^(8))of Ag NDs TS device.Moreover,the high uniformity of the Ag NDs TS device helps improve the distribution of the output frequency and suppress the degradation of neural network recognition accuracy(<1%).Therefore,the developed oscillation neuron based on the Ag NDs TS device shows great potential for future neuromorphic computing applications.

Redox Memristors with Volatile Threshold Switching Behavior for Neuromorphic Computing

The spiking neural network(SNN),closely inspired by the human brain,is one of the most powerful platforms to enable highly efficient,low cost,and robust neuromorphic computations in hardware using traditional or emerging electron devices within an integrated system.In the hardware implementation,the building of artificial spiking neurons is fundamental for constructing the whole system.However,with the slowing down of Moore’s Law,the traditional complementary metal-oxide-semiconductor(CMOS)technology is gradually fading and is unable to meet the growing needs of neuromorphic computing.Besides,the existing artificial neuron circuits are complex owing to the limited bio-plausibility of CMOS devices.Memristors with volatile threshold switching(TS)behaviors and rich dynamics are promising candidates to emulate the biological spiking neurons beyond the CMOS technology and build high-efficient neuromorphic systems.Herein,the state-of-the-art about the fundamental knowledge of SNNs is reviewed.Moreover,we review the implementation of TS memristor-based neurons and their systems,and point out the challenges that should be further considered from devices to circuits in the system demonstrations.We hope that this review could provide clues and be helpful for the future development of neuromorphic computing with memristors.

Ag-GST/HfO_(x)-based unidirectional threshold switching selector with low leakage current and threshold voltage distribution for high-density cross-point arrays

The use of electrochemical-metallization-based volatile threshold switching selectors in cross-point arrays has been widely explored owing to their high on-off ratios and simple structure.However,these devices are unsuitable for cross-point architectures because of the difficulty in controlling the random filament formation that results in large fluctuations in the threshold voltage during operation.In this study,we investigated the unidirectional threshold transition characteristics associated with an Ag/GST/HfO_(x)/Pt-based bilayer selector and demonstrated the occurrence of a low leakage current(<1×10^(-11) A) and low distribution of the threshold voltage(Δ0.11 V).The bilayer structure could control the filament formation in the intermediate state through the insertion of an HfO_(x) tunneling barrier.By stacking a bilayer selector with NiO_(x)based resistive random-access memory,the leakage and programming currents of the device could be significantly decreased.For the crossbar array configuration,we performed equivalent circuit analysis of a one-selector oneresistor(1S1R) devices and estimated the optimal array size to demonstrate the applicability of the proposed structure.The maximum acceptable crossbar array size of the 1S1R device with the Ag/GST/HfO_(x)/Pt/Ti/NiO_(x)/Pt structure was 5.29×10^(14)(N^(2),N=2.3×10^(7)).

Stationary Analysis of Geo/Geo/1 Queue with Two-Speed Service and the Optimal Switching Threshold for the Service Rate

This paper considers a Geo/Geo/1 queueing system with infinite capacity, in which the service rate changes depending on the workload. Initially, when the number of customers in the system is less than a certain threshold L, low service rate is provided for cost saving. On the other hand, the high service rate is activated as soon as L customers accumulate in the system and such service rate is preserved until the system becomes completely empty even if the number of customers falls below L. The steady-state probability distribution and the expected number of customers in the system are derived. Through the first-step argument, a recursive algorithm for computing the first moment of the conditional sojourn time is obtained. Furthermore, employing the results of regeneration cycle analysis, the direct search method is also implemented to determine the optimal value of L for minimizing the long-run average cost rate function.

Differential pressure difference based altitude control of a stratospheric satellite

An autonomous altitude adjustment system for a stratospheric satellite(StratoSat)platform is proposed.This platform consists of a helium balloon,a ballonet,and a two-way blower.The helium balloon generates lift to balance the platform gravity.The two-way blower inflates and deflates the ballonet to regulate the buoyancy.Altitude adjustment is achieved by tracking the differential pressure difference(DPD),and a threshold switching strategy is used to achieve blower flow control.The vertical acceleration regulation ability is decided not only by the blower flow rate,but also by the designed margin of pressure difference(MPD).Pressure difference is a slow-varying variable compared with altitude,and it is adopted as the control variable.The response speed of the actuator to disturbance can be delayed,and the overshoot caused by the large inertia of the platform is inhibited.This method can maintain a high tracking accuracy and reduce the complexity of model calculation,thus improving the robustness of controller design.

基于阈值控制策略的Filippov Chay神经元动力学及其耦合同步

细胞内外带电离子的连续泵送和传递产生的电磁感应效应对神经元的电活动及模态转换会产生一定的影响,促使其展现出更加丰富的放电特性.文章基于电磁感应影响下的Chay神经元模型,引入了一种以膜电压为阈值的不连续控制策略,建立了相应的Filippov Chay神经元模型,探究了在阈值控制策略影响下的神经元放电节律转迁及相应的边界运动.首先,对系统的边界动力学及滑膜动力学进行了理论分析.其次,利用单双参数分岔图探究了系统多样的放电模式.再次,结合Matcont仿真及稳定性理论详细分析了系统的平衡点及其稳定性,并且利用快慢动力学分析法进一步研究了在阈值影响下所产生的滑膜动力学及各种边界运动的切换.最后,通过电突触耦合,对不同阈值条件下耦合神经元的同步问题进行了讨论.数值仿真结果表明,在阈值的调控下Filippov Chay系统会产生滑膜放电活动及相应的穿越运动和擦边运动,同时其放电周期数也会随着阈值呈现出不同的变化规律,且对于不同阈值下的电耦合情况而言,在系统实现完全同步后都会稳定在周期数较低的放电态.以上所得结果有助于更好地理解神经元滑膜的相关控制,对进一步探究生物神经系统中复杂放电活动和信息处理的动力学行为提供了一定的帮助.

双波长LD泵浦Nd^(3+)∶YAG免温控被动调Q激光器的研究

传统的固体激光器体积、重量大,功耗高,限制了其在空间受限设备中的应用。被动调Q的LD泵浦免温控固体激光器省去了复杂的温度控制装置,调Q机构简单,能够满足复杂温度环境的特殊应用场景的小型化、低功耗要求。提出了基于双波长LD泵浦实现宽温度范围免温控阈值自适应的1.06μm激光脉冲输出方法。基于Nd∶YAG晶体设计了角锥棱镜谐振腔,仿真分析了LD泵浦源到激光棒的面心距对热负载的影响,并确定4 mm的最佳面心距。数值分析了相同泵浦功率下-40~60℃温度范围内激光静态能量输出变化,以及不同初始透过率的可饱和吸收体对激光阈值脉宽的影响。计算结果表明在-37℃~60℃范围内,阈值脉宽都在200μs以下,阈值脉宽最低点达到了29.4μs。构建主波实时探测的阈值自适应调节装置并搭建实验系统,实验结果表明,在温度范围为-35~60℃时,阈值脉宽变化范围为40~180μs。采用激光腔体一体加工成型,应用轻量化的铝合金材料,实现工程化应用,体积83.5 mm×44 mm×29.5 mm,重量约为230 g。在23.8%初始透过率的饱和吸收体条件下实现单脉冲输出能量42 mJ,脉冲宽度5.2 ns。

Multilayer doped-GeSe OTS selector for improved endurance and threshold voltage stability

Selector devices are indispensable components of large-scale memristor array systems.The thereinto,ovonic threshold switching(OTS)selector is one of the most suitable candidates for selector devices,owing to its high selectivity and scalability.However,OTS selectors suffer from poor endurance and stability which are persistent tricky problems for applica-tion.Here,we report on a multilayer OTS selector based on simple GeSe and doped-GeSe.The experimental results show im-proving selector performed extraordinary endurance up to 1010 and the fluctuation of threshold voltage is 2.5%.The reason for the improvement may lie in more interface states which strengthen the interaction among individual layers.These develop-ments pave the way towards tuning a new class of OTS materials engineering,ensuring improvement of electrical perform-ance.

Sence-Switch型pFLASH单元制备及特性

基于0.13μm eFLASH工艺技术,成功制备了Sence-Switch型pFLASH单元,并对其性能进行了研究。该单元由两个共享浮栅和控制栅的编程/擦除管（T_1）和信号传输管（T_2）组成,采用带带遂穿（BTBT）编程方式和福勒-诺德海姆（FN）遂穿擦除方式实现了其＂开/关＂态功能,并对其＂开/关＂态特性进行表征,同时,研究了其耐久性和电荷保持特性。实验结果表明,该单元具有较优的＂开/关＂态特性和电参数一致性,T_1/T_2管阈值窗口的均值、均一性分别约为9.2 V和2.4%;在工作电压为-1.5 V条件下,T_2管＂关＂态的漏电流均在1 p A/μm以下,T_2管＂开＂态的驱动电流均值为116.22μA/μm,均一性为5.61%;该单元循环擦/写次数可达10 000次。同时,在25℃的＂开/关＂态应力条件下,该Sence-Switch型pFLASH单元寿命大于10年。

A NOVEL LOW DISTORTION HIGH LINEARITY CMOS BOOTSTRAPPED SWITCH

This paper proposes a novel low distortion high linearity CMOS bootstrapped switch, and the proposed switch can alleviate the nonlinear distortion of the on-resistance by eliminating first order signal-dependent variation of the overdrive voltage. Based on a 0.18 mm standard CMOS process, the simulation results show that at 100 MHz sampling clock frequency and 49 MHz input signal with 2Vpp, the proposed switch in differential mode has a Spurious-Free Dynamic Range(SFDR) of 90.1 dB.

Closed-Form Absolute Ruin Problems of the Risk Models with State-Dependent Switched Claims

This letter mainly investigates a general risk model with the threshold dividend strategy under assumption that the claim amounts obey a state-dependent switched exponential distribution. By establishing the differential-integral equations for the Gerber-Shiu discounted penalty function, and applying the hypergeometric functions, the closed-form absolute ruin probability is derived.

AN EFFICIENT SCHEDULING ALGORITHM FOR INPUT-QUEUED SWITCHES

This letter presents an efficient scheduling algorithm DTRR (Dual-Threshold Round Robin) for input-queued switches. In DTRR, a new matched input and output by round robin in a cell time will be locked by two self-adaptive thresholds whenever the queue length or the wait-time of the head cell in the corresponding Virtual Output Queue (VOQ) exceeds the thresholds. The locked input and output will be matched directly in the succeeding cell time until they are unlocked. By employing queue length and wait-time thresholds which are updated every cell time simultane- ously, DTRR achieves a good tradeoff between the performance and hardware complexity. Simula- tion results indicate that the delay performance of DTRR is competitive compared to other typical scheduling algorithms under various traffic patterns especially under diagonal traffic.

一种均衡阈值可调的双模式电池均衡电路

均衡电路对于提高串联电池组内部一致性、容量利用率和寿命具有重要意义。针对现有单模式均衡电路的局限性,提出了一种基于准谐振开关电容和互补三谐振LC变换器的双模式电池均衡电路,可以根据电压分布情况在任意电池至任意电池间传输模式和直接电池至电池间传输模式之间切换,且两种模式均实现了零电流开关,减少了电路损耗。为了获得最优的均衡速度,提出一种具有双阈值的均衡电路控制策略,通过对均衡阈值的调整可以获得最佳的均衡速度。分析了两种均衡模式的运行状态、均衡功率和均衡效率,并搭建了4节电池的实验样机,在不同均衡阈值下进行了均衡实验,实验结果说明均衡阈值的调整使得双模式均衡电路获得了最佳的均衡速度,实验验证了该双模式电池均衡电路的有效性。

本征可拉伸阈值型忆阻器及其神经元仿生特性

研制具有生物神经元信息功能的柔性电子器件对于发展智能穿戴技术具有重要意义。传统阈值型忆阻器可模仿神经元信息整合功能,但因缺乏本征柔韧性,难以满足应用需求。本工作制备了一种基于本征可拉伸阈值型忆阻器的柔性人工神经元,它由银纳米线–聚氨酯复合介质薄膜和液态金属电极构成。在外加电压下,器件呈现良好的阈值电阻转变特性,这归因于银纳米线间形成非连续银导电细丝的动态通断。该器件可模仿生物神经元的信息整合–发放及脉冲强度和脉冲间隔调制的尖峰放电功能。在20%拉伸应变下,器件工作参数基本保持稳定,性能未发生明显退化。本工作为发展可拉伸柔性人工神经元及下一代智能穿戴设备提供重要材料和技术参考。

电极材料对NbO_(x)Mott忆阻器稳定性的影响

为了改善NbO_(x)Mott忆阻器电学稳定性和一致性,提升NbO_(x)Mott忆阻器构建人工脉冲神经元的应用潜力,研究制备了通孔型NbO_(x)Mott忆阻器,并对比研究了Pt、W电极材料对器件稳定性和一致性的影响。研究结果表明,相较于常见报道的Pt电极器件,采用W电极的NbO_(x)Mott忆阻器表现出了更为优越的稳定性和一致性。此外,利用NbO_(x)Mott忆阻器搭建了振荡电路,成功实现了人工脉冲神经元的功能。基于W电极NbO_(x)Mott忆阻器的人工脉冲神经元可以稳定振荡时间超过106 s,循环耐久性可达1012次以上,其振荡波形的幅度及频率稳定性远好于基于Pt电极的人工脉冲神经元。进一步的XPS结果显示,在基于W电极的NbO_(x)Mott忆阻器中,W和NbO_(x)界面生成了一层致密的WO_(x)层,有效地阻挡了氧空位在NbO_(x)材料中的迁移。相比之下,基于Pt电极的NbO_(x)Mott忆阻器因Pt层存在大量晶界且对氧空位有较强的吸附作用,导致在电激活和阈值阻变过程中氧空位发生跳动,从而降低了器件的电学稳定性。该研究为提升NbO_(x)Mott忆阻器的稳定性和一致性提供了新的途径,有望推动其在脉冲型神经形态计算系统中的产业化应用。

工艺误差下MEMS惯性触发开关的阈值特性研究

为促进MEMS惯性触发开关实现工程化应用,对工艺误差下MEMS惯性触发开关的阈值特性进行了研究。加工了相关MEMS万向惯性开关器件并进行加速度阈值测试,从尺寸与弹性模量两方面分析其误差来源与产生机理,测量器件的结构尺寸与弹性模量,构建一个考虑工艺尺寸与弹性模量的仿真模型并进行仿真精度分析。仿真结果表明,工艺尺寸与弹性模量误差对开关的阈值特性有重要影响,所构建的仿真模型能够较好地预测开关性能。

基于分块Otsu法的车窗开关缺陷阈值分割方法

车窗开关的外观与性能有着不可分割的关系,表面缺陷检测是阻止缺陷产品流入市场的重要手段。针对用传统的阈值算法对车窗开关进行分割时容易造成误分现象,提出一种分块Otsu阈值法。对开关组图像去噪后分割开关,然后对开关图像进行分块阈值处理,通过提取特征进行缺陷判断。分块阈值处理是将图像分块,以整幅图像灰度最高值作为基准,对每块图像进行灰度补偿,并进行Otsu阈值法处理。实验结果表明:分块Otsu法能有效分割出车窗开关的缺陷,同时消除了光照不均现象的影响,充分验证该方法的可行性;利用多种常见阈值分割处理进行对比实验,其效果优于其他处理方法,充分验证方法的高效性。