以Ti/Al/Ni/Au作为欧姆接触金属体系,通过电感耦合等离子体(ICP)刻蚀的预处理,在氢化物气相外延法生长的单晶氮化镓(GaN)材料的N面实现了良好的欧姆接触,其比接触电阻率为3.7×10-4Ω·cm^2。通过扫描电子显微镜、原子力显微镜...以Ti/Al/Ni/Au作为欧姆接触金属体系,通过电感耦合等离子体(ICP)刻蚀的预处理,在氢化物气相外延法生长的单晶氮化镓(GaN)材料的N面实现了良好的欧姆接触,其比接触电阻率为3.7×10-4Ω·cm^2。通过扫描电子显微镜、原子力显微镜、阴极荧光和光致发光谱对GaN N面的表面、光学特性进行了对比表征。结果表明:未刻蚀GaN衬底的N面表面存在一定的损伤层,导致近表面处含有大量缺陷,不利于欧姆接触的形成;而ICP刻蚀处理有效地去除了损伤层。X射线光电子能谱(XPS)分析显示刻蚀后样品的Ga 3d结合能比未刻蚀样品向高能方向移动了约0.3 e V,其肖特基势垒则相应降低,有利于欧姆接触的形成。同时对Fe掺杂半绝缘GaN的N面也进行了刻蚀处理,同样实现了良好的Ti/Al/Ni/Au欧姆接触,其比接触电阻率为0.12Ω·cm^2。展开更多
The Ti/Al/Ni/Au metals were deposited on undoped AlN films by electron beam evaporation. The influence of annealing temperature on the properties of contacts was investigated. When the annealing temperatures were betw...The Ti/Al/Ni/Au metals were deposited on undoped AlN films by electron beam evaporation. The influence of annealing temperature on the properties of contacts was investigated. When the annealing temperatures were between 800 and 950 ℃, the AlN-Ti/Al/Ni/Au contacts became ohmic contacts and the resistance decreased with the increase of annealing temperature. A lowest specific contacts resistance of 0.379 Ω·cm^2 was obtained for the sample annealed at 950 ℃. In this work, we confirmed that the formation mechanism of ohmic contacts on Al N was due to the formation of Al-Au, Au-Ti and Al-Ni alloys, and reduction of the specific contacts resistance could originate from the formation of Au2Ti and AlAu2 alloys. This result provided a possibility for the preparation of Al N-based high-frequency, high-power devices and deep ultraviolet devices.展开更多
In a previous paper it was shown that the normal spectral emissivity at 684.5 nm of a binary alloy can be lower than that of the pure constituent components. For the actual probes it was found that the observed values...In a previous paper it was shown that the normal spectral emissivity at 684.5 nm of a binary alloy can be lower than that of the pure constituent components. For the actual probes it was found that the observed values of normal spectral emissivity of the alloys are in between or higher than those of the pure constituent components. Experiments were conducted on the alloy systems Ni-Ti and Au-Ni. Their emissivity as well as electrical resistivity and enthalpy as a function of temperature is presented.展开更多
文摘以Ti/Al/Ni/Au作为欧姆接触金属体系,通过电感耦合等离子体(ICP)刻蚀的预处理,在氢化物气相外延法生长的单晶氮化镓(GaN)材料的N面实现了良好的欧姆接触,其比接触电阻率为3.7×10-4Ω·cm^2。通过扫描电子显微镜、原子力显微镜、阴极荧光和光致发光谱对GaN N面的表面、光学特性进行了对比表征。结果表明:未刻蚀GaN衬底的N面表面存在一定的损伤层,导致近表面处含有大量缺陷,不利于欧姆接触的形成;而ICP刻蚀处理有效地去除了损伤层。X射线光电子能谱(XPS)分析显示刻蚀后样品的Ga 3d结合能比未刻蚀样品向高能方向移动了约0.3 e V,其肖特基势垒则相应降低,有利于欧姆接触的形成。同时对Fe掺杂半绝缘GaN的N面也进行了刻蚀处理,同样实现了良好的Ti/Al/Ni/Au欧姆接触,其比接触电阻率为0.12Ω·cm^2。
文摘The Ti/Al/Ni/Au metals were deposited on undoped AlN films by electron beam evaporation. The influence of annealing temperature on the properties of contacts was investigated. When the annealing temperatures were between 800 and 950 ℃, the AlN-Ti/Al/Ni/Au contacts became ohmic contacts and the resistance decreased with the increase of annealing temperature. A lowest specific contacts resistance of 0.379 Ω·cm^2 was obtained for the sample annealed at 950 ℃. In this work, we confirmed that the formation mechanism of ohmic contacts on Al N was due to the formation of Al-Au, Au-Ti and Al-Ni alloys, and reduction of the specific contacts resistance could originate from the formation of Au2Ti and AlAu2 alloys. This result provided a possibility for the preparation of Al N-based high-frequency, high-power devices and deep ultraviolet devices.
基金This work is financially supported by the "Austrian Science Fund - FWF", Sensengasse 1, 1090 Vienna, under contract No. P15055
文摘In a previous paper it was shown that the normal spectral emissivity at 684.5 nm of a binary alloy can be lower than that of the pure constituent components. For the actual probes it was found that the observed values of normal spectral emissivity of the alloys are in between or higher than those of the pure constituent components. Experiments were conducted on the alloy systems Ni-Ti and Au-Ni. Their emissivity as well as electrical resistivity and enthalpy as a function of temperature is presented.
文摘研究了Al2O3/Ti(C,N)-Ni-Ti陶瓷复合刀具对淬硬35CrMo合金钢进行连续干切削时各切削参数对切削力的影响.结果表明:切削深度对切削力的影响最显著,切削速度的影响最小.对比研究了Al2O3/Ti(C,N)和Al2O3/Ti(C,N)-Ni-Ti陶瓷刀具的耐磨性能和磨损形态:后者的耐磨性能明显优于前者,其中Al2O3/Ti(C,N)-5%(Ni,Ti)的耐磨性能最高.Al2O3/Ti(C,N)-Ni-Ti刀具的磨损形态主要表现为后刀面的磨粒磨损和疲劳磨损,由于这种材料具有较高的弯曲强度和断裂韧性,能有效防止前刀面出现崩刃破损现象,因此具有较高的可靠性,适用于高速切削.在高速切削条件(ap=0.06 mm,vc=254.9 m/min,vf=0.09 mm/r)下,Al2O3/Ti(C,N)-5%(Ni,Ti)刀具的切削耐用度为150 min.
