期刊文献+
共找到2篇文章
< 1 >
每页显示 20 50 100
正电子湮没研究Al、Nb共掺CaCu3Ti4O12陶瓷高介电常数机理 被引量:1
1
作者 温阿利 朱基亮 +3 位作者 范平 马海亮 张乔丽 袁大庆 《原子能科学技术》 EI CAS CSCD 北大核心 2019年第6期961-969,共9页
关于CaCu3Ti4O12陶瓷的高介电常数机理,目前广泛接受的是非本征的内阻挡层电容模型。该模型认为在多晶中元素变价、缺陷和非化学计量比等导致的半导化晶粒被绝缘晶界层,即内阻挡层所包围。其中内阻挡层的厚度对材料的介电性能影响较大,... 关于CaCu3Ti4O12陶瓷的高介电常数机理,目前广泛接受的是非本征的内阻挡层电容模型。该模型认为在多晶中元素变价、缺陷和非化学计量比等导致的半导化晶粒被绝缘晶界层,即内阻挡层所包围。其中内阻挡层的厚度对材料的介电性能影响较大,而扫描电子显微镜(SEM)测试表明样品晶界呈稀烂的果酱状,SEM难以测量晶界区域绝缘内阻挡层厚度。本文采用正电子湮没技术表征其厚度,通过对CaCu3Ti4O12陶瓷共掺不同浓度的Al、Nb(CaCu3Ti4-xAl0.5xNb0.5xO12,x=0.2%、0.5%、5.0%)改变其晶粒和晶界的微观结构,研究CaCu3Ti4O12陶瓷高介电常数机理。正电子湮没结果显示,掺杂样品符合多普勒展宽谱S参数的变化趋势与平均寿命的变化趋势一致。x=0.5%掺杂样品的介电常数最高,其平均寿命、S参数和湮没长寿命成分均最小,阻挡层最薄。实验结果验证了描述CaCu3Ti4O12陶瓷高介电常数机理的内阻挡层电容模型的预测。 展开更多
关键词 CaCu3ti4O12陶瓷 alnb共掺 高介电常数 内阻挡层电容 正电子湮没
下载PDF
Hot deformation behavior and processing maps of Ti-15Al-12Nb alloy 被引量:4
2
作者 Ravindranadh Bobbili Vemuri Madhu 《Rare Metals》 SCIE EI CAS CSCD 2022年第7期2316-2323,共8页
The isothermal hot compression tests of Ti-15Al-12Nb alloy under wide range of strain rates(0.01-10.00 s^(-1)and deformation temperatures(950,1000,1050,and 1100℃)were carried out using Gleeble-3500 thermo-simulation ... The isothermal hot compression tests of Ti-15Al-12Nb alloy under wide range of strain rates(0.01-10.00 s^(-1)and deformation temperatures(950,1000,1050,and 1100℃)were carried out using Gleeble-3500 thermo-simulation machine.A constitutive equation represented as a function of temperature,strain rate and true strain was developed,and the hot deformation appar-ent activation energy is calculated to be about 453 kJ·mol^(-1).By employing dynamic material model(DMM),the processing maps of Ti-15Al-12Nb alloy at various strains were established.Maximum efficiency of about 57%for power dissipation is obtained at high temperature and low strain rate.Owing to the high power dissipation efficiency and excellent processing ability in dynamic recrystallization(DRX)zone for metal material,the optimum processing conditions are selected as the temperature range of 1050-1100℃and the strain rate range of 0.01-0.10 s^(-1).Using transmission electron microscopy(TEM)studies,it is found that the dislocation density is directly associated with the value of processing efficiency.It is observed that when the processing effi-ciency is about 22%,the dislocation density is reasonably large.The flow instability region occurs at strain rate of 10.00 s^(-1)with cracks,which should be avoided during hot processing to obtain the required mechanical properties. 展开更多
关键词 Hot deformation Processing map ti–15al–12nb
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部