In this letter, a phase change random access memory(PCRAM) chip based on Ti0.4Sb2Te3 alloy material was fabricated in a 40-nm 4-metal level complementary metal-oxide semiconductor(CMOS) technology. The phase change re...In this letter, a phase change random access memory(PCRAM) chip based on Ti0.4Sb2Te3 alloy material was fabricated in a 40-nm 4-metal level complementary metal-oxide semiconductor(CMOS) technology. The phase change resistor was then integrated after CMOS logic fabrication. The PCRAM was successfully embedded without changing any logic device and process, in which 1.1 V negative-channel metal-oxide semiconductor device was used as the memory cell selector. The currents and the time of SET and RESET operations were found to be 0.2 and 0.5 m A, 100 and 10 ns,respectively. The high speed performance of this chip may highlight the design advantages in many embedded applications.展开更多
Thermoelectric properties of orthorhombic or rhombohedral GeSe have attracted great attention recently,with the rise of its structural analog Sn Se.However,the p-type cubic GeSe with higher symmetry and higher valence...Thermoelectric properties of orthorhombic or rhombohedral GeSe have attracted great attention recently,with the rise of its structural analog Sn Se.However,the p-type cubic GeSe with higher symmetry and higher valence band degeneracy,which might exhibit higher thermoelectric performance,has never been synthesized.Here we report on the successful synthesis of p-type crystalline cubic GeSe by alloying with Sb2Te3 and the spontaneously formed Ge-vacancies.An unexpected glass-like temperature independent lattice thermal conductivity is observed in crystalline cubic GeSe,which results from strong phonon scattering by vacancy-induced disorders.Combining the multiple scattering theory and chemical bond analysis,we further reveal the existence of Anderson localization induced by Ge-vacancies.The Anderson localization results in a nearly constant Seebeck coefficient with increasing the carrier concentration.These results provide a general insight towards understanding and improving the thermoelectric properties of thermoelectric materials with vacancies and atomic-scale disorders.展开更多
基金supported by the‘‘Strategic Priority Research Program’’of the Chinese Academy of Sciences(XDA09020402)National Key Basic Research Program of China(2013CBA01900,2010CB934300,2011CBA00607,2011CB932804)+2 种基金National Integrate Circuit Research Program of China(2009ZX02023-003)National Natural Science Foundation of China(61176122,61106001,61261160500,61376006)Science and Technology Council of Shanghai(12nm0503701,13DZ2295700,12QA1403900,13ZR1447200,14ZR1447500)
文摘In this letter, a phase change random access memory(PCRAM) chip based on Ti0.4Sb2Te3 alloy material was fabricated in a 40-nm 4-metal level complementary metal-oxide semiconductor(CMOS) technology. The phase change resistor was then integrated after CMOS logic fabrication. The PCRAM was successfully embedded without changing any logic device and process, in which 1.1 V negative-channel metal-oxide semiconductor device was used as the memory cell selector. The currents and the time of SET and RESET operations were found to be 0.2 and 0.5 m A, 100 and 10 ns,respectively. The high speed performance of this chip may highlight the design advantages in many embedded applications.
基金financial support from Dalian Institute of Chemical Physics(Grant:DICP ZZBS201608)。
文摘Thermoelectric properties of orthorhombic or rhombohedral GeSe have attracted great attention recently,with the rise of its structural analog Sn Se.However,the p-type cubic GeSe with higher symmetry and higher valence band degeneracy,which might exhibit higher thermoelectric performance,has never been synthesized.Here we report on the successful synthesis of p-type crystalline cubic GeSe by alloying with Sb2Te3 and the spontaneously formed Ge-vacancies.An unexpected glass-like temperature independent lattice thermal conductivity is observed in crystalline cubic GeSe,which results from strong phonon scattering by vacancy-induced disorders.Combining the multiple scattering theory and chemical bond analysis,we further reveal the existence of Anderson localization induced by Ge-vacancies.The Anderson localization results in a nearly constant Seebeck coefficient with increasing the carrier concentration.These results provide a general insight towards understanding and improving the thermoelectric properties of thermoelectric materials with vacancies and atomic-scale disorders.
