Influence of Temperature on Nitrogen Ion Implantation of Ti6Al4V Alloy

in order to achieve increased layer thickness, and wearing resistance, enhanced ion implantation with nitrogen has been carried out at temperatures of 100, 200, 400, and 600℃ with a dose of 4x 1018 ions' cm-2. Using the Plasma Source ion Implantation (PSII) device, specimens of Ti6Al4V alloy were implanted at elevated temperatures, using the ion flux as the heating source. Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD), micro-hardness measurements and pin-on-disk wearing tester were utilized to evaluate the surface property improvements. The thickness of the implanted layer increased by about an order of magnitude when the temperature was elevated from 100 to 600℃. Higher surface hardness and wearing resistance was also obtained in implantation under higher temperature. XRD image showed the presence of titanium nitrides on the implanted surface.

Tribological behavior of different films on Ti-6Al-4V alloy prepared by plasma-based ion implantation

The tribological behaviors of TiN coating and TiN+TiC+Ti(C, N)/diamond like carbon (DLC), TiN/DLC, TiC/DLC multilayers on Ti 6Al 4V alloy prepared by plasma based ion implantation (PBII) were compared. Under the test conditions of counterbody AISI 52100, load 1 N and speed 0.05 m/s, the tribological properties of the alloy are improved by these films in the order of TiN, TiC/DLC, TiN/DLC and TiN+TiC+Ti(C,N)/DLC. Tribological behavior is affected by the conditions of surface modification and triboexperiments. The appearance of “peaks” in the wear dynamic resistance profiles may be due or correspond to the process of formation and breaking apart of transition films. The breakthrough of the DLC coated samples may start from partially wearing out, and end with joining piece dilamination. There are transition films on all counterbodies AISI 52100. When AISI 52100 counterbody is changed to Ti 6Al 4V, the wear of most modified samples is changed from only disc to both disc and ball abrasive dominated.

Structure and visible photocatalytic activity of nitrogen-doped meso-porous TiO_2 layer on Ti6Al4V substrate by plasma-based ion implantation

The nitrogen-doped porous TiO2 layer on Ti6Al4V substrate was fabricated by plasma-based ion implantation of He, O and N. In order to increase the photodegradation efficiency of TiO2 layer, two methods were used in the process by forming mesopores to increase the specific surface area and by nitrogen doping to increase visible light absorption. Importantly, TiO2 formation, porosity architectures and nitrogen doping can be performed by implantation of He, O and N in one step. After implantation, annealing at 650 ℃ leads to a mixing phase of anatase with a little rutile in the implanted layer. By removing the near surface compact layer using argon ion sputtering, the meso-porous structure was exposed on surfaces. Nitrogen doping enlarges the photo-response region of visible light. Moreover, the nitrogen dose of 8×1015 ion/cm2 induces a stronger visible light absorption. The photodegradation of rhodamine B solution with visible light sources indicates that the mesopores on surfaces and nitrogen doping contribute to an apparent increase of photocatalysis efficiency.

Composition and Structure of Ti-6Al-4V Alloy Plasma-based Ion Implanted with Nitrogen

The composition and structure of Ti 6Al 4V alloy plasma based ion implanted with nitrogen was investigated.The nitrogen depth distribution shows more antiballistic with distribution peak heightened with increased implantation time(dose),and more like a parabola at the low implantation pulse voltage.When implantation pulse voltage is increased,the implantation depth increased with the nitrogen distribution peak being deepened,widened and lowered somewhat.TiN,TiN+Ti 2N,or Ti 2N second phases were formed in the implanted layer.The relative percentage of nitrogen content in the form of TiN increases when going deeper into the implanted(TiN formed) layer.The increase of implantation pulse width and/or time is favourable for the formation of TiN rather than Ti 2N.It is unfavourable for formation of any nitrides when implantation pulse voltage is decreased to 30kV or less.Tiny crystalline particles (made mainly of Ti 2N and a smaller percentage of TiO 2 phases) of regular shapes such as triangle and tetragon, etc .(about 20 nm) are found distrbuted dispersively in the near surface region of samples implanted at the high implantation pulse voltage (75kV).