High quality TiC whiskers have been prepared by a modified chemical vapor deposition (CVD) method using TiCl4 and CH4 as reactant gases and Ni as substrate. The deposition temperature and gas flow mies have ampreciabl...High quality TiC whiskers have been prepared by a modified chemical vapor deposition (CVD) method using TiCl4 and CH4 as reactant gases and Ni as substrate. The deposition temperature and gas flow mies have ampreciable effect on the whisker growth.The whisker orientations and morphology are determined by X-my diffraction (XRD),scanning electron micmpmph (SEM) and transmission electron microgmph (TEM).In addition to the spherical tips, spiral growth microsteps and obvious terraces are observed at the tips and side faces of whiskers in the present eoperiment. The whiskers grow mostly along (100) direction. The whisker growth mechanism is discussed in detail.展开更多
The cemented carbide material (YG10F) with different additions of TiC whisker (0%, 0.3%, 0.6%, mass fraction) was prepared by different techniques. The effect of TiC whisker addition on the density, microhardness and ...The cemented carbide material (YG10F) with different additions of TiC whisker (0%, 0.3%, 0.6%, mass fraction) was prepared by different techniques. The effect of TiC whisker addition on the density, microhardness and toughness of the experimental material was investigated. The results indicate that after the wet-milling for 8 h and sintering in vacuum at 1 440 ℃, the toughness of YG10F is remarkably improved and meanwhile higher microhardness is obtained by 0.3% TiC whisker addition. Preliminary analysis suggests that the main toughening mechanism of TiC whisker in YG10F is whisker pull-out and bridging phenomena.展开更多
文摘High quality TiC whiskers have been prepared by a modified chemical vapor deposition (CVD) method using TiCl4 and CH4 as reactant gases and Ni as substrate. The deposition temperature and gas flow mies have ampreciable effect on the whisker growth.The whisker orientations and morphology are determined by X-my diffraction (XRD),scanning electron micmpmph (SEM) and transmission electron microgmph (TEM).In addition to the spherical tips, spiral growth microsteps and obvious terraces are observed at the tips and side faces of whiskers in the present eoperiment. The whiskers grow mostly along (100) direction. The whisker growth mechanism is discussed in detail.
基金Project(550108) supported by the Natural Science Foundation of Jiangxi Province, China
文摘The cemented carbide material (YG10F) with different additions of TiC whisker (0%, 0.3%, 0.6%, mass fraction) was prepared by different techniques. The effect of TiC whisker addition on the density, microhardness and toughness of the experimental material was investigated. The results indicate that after the wet-milling for 8 h and sintering in vacuum at 1 440 ℃, the toughness of YG10F is remarkably improved and meanwhile higher microhardness is obtained by 0.3% TiC whisker addition. Preliminary analysis suggests that the main toughening mechanism of TiC whisker in YG10F is whisker pull-out and bridging phenomena.
