为了探索超高分子量聚乙烯 (UHMWPE)与钛基 - Ti N- Ti C系梯度薄膜材料组合作为人工关节置换材料的可能性 ,利用离子注入和等离子体化学气相沉积 (PCVD)方法制备了 Ti6 Al4V- Ti N- Ti C系梯度薄膜材料。通过摩擦系数和 UHMWPE磨损失...为了探索超高分子量聚乙烯 (UHMWPE)与钛基 - Ti N- Ti C系梯度薄膜材料组合作为人工关节置换材料的可能性 ,利用离子注入和等离子体化学气相沉积 (PCVD)方法制备了 Ti6 Al4V- Ti N- Ti C系梯度薄膜材料。通过摩擦系数和 UHMWPE磨损失重的测定和用 SEM对磨损后的 U HMWPE表面形貌分析 ,研究了 U HMWPE与Ti6 Al4V- Ti N- Ti C系梯度薄膜材料摩擦副的生物摩擦磨损特性。研究表明 :在人血清润滑下 ,随配对的梯度薄膜材料表面硬度的增加 ,UHMWPE磨损量减小。与硬度大的 Ti6 Al4V- Ti N- Ti C梯度薄膜材料对磨时 ,UHMWPE的磨损量最小 ,为该摩擦副作为人工关节置换材料提供了依据。还对各摩擦副的 U展开更多
In this paper, the synthesis process of TiC+TiN multiple films on super-low-carbon stainless steels is reported. The TiC layer is coated as the first layer in the multiple film, the change of growth rate of the film o...In this paper, the synthesis process of TiC+TiN multiple films on super-low-carbon stainless steels is reported. The TiC layer is coated as the first layer in the multiple film, the change of growth rate of the film on the 316L Stainless steel is not same as the one on carbides substrates, while the mole ratio of CRi to TiCLi (mCH/TiCl4) is changed from 1.2 to 2.0. The Ti [C, N], as a kind of inter-layer between TiC and TiN layers, is helpful to improve the adhesion between the TiC and TiN layer. The cooling rate greatly influences the quality of the adhesion between the TiC+TiN film and substrates.展开更多
文摘为了探索超高分子量聚乙烯 (UHMWPE)与钛基 - Ti N- Ti C系梯度薄膜材料组合作为人工关节置换材料的可能性 ,利用离子注入和等离子体化学气相沉积 (PCVD)方法制备了 Ti6 Al4V- Ti N- Ti C系梯度薄膜材料。通过摩擦系数和 UHMWPE磨损失重的测定和用 SEM对磨损后的 U HMWPE表面形貌分析 ,研究了 U HMWPE与Ti6 Al4V- Ti N- Ti C系梯度薄膜材料摩擦副的生物摩擦磨损特性。研究表明 :在人血清润滑下 ,随配对的梯度薄膜材料表面硬度的增加 ,UHMWPE磨损量减小。与硬度大的 Ti6 Al4V- Ti N- Ti C梯度薄膜材料对磨时 ,UHMWPE的磨损量最小 ,为该摩擦副作为人工关节置换材料提供了依据。还对各摩擦副的 U
文摘In this paper, the synthesis process of TiC+TiN multiple films on super-low-carbon stainless steels is reported. The TiC layer is coated as the first layer in the multiple film, the change of growth rate of the film on the 316L Stainless steel is not same as the one on carbides substrates, while the mole ratio of CRi to TiCLi (mCH/TiCl4) is changed from 1.2 to 2.0. The Ti [C, N], as a kind of inter-layer between TiC and TiN layers, is helpful to improve the adhesion between the TiC and TiN layer. The cooling rate greatly influences the quality of the adhesion between the TiC+TiN film and substrates.