Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with differ-ent Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-...Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with differ-ent Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectrophotometry and photoconductivity study. The variation observed in the properties of the measured films agrees with a difference in the film's thickness, which decreases when Al concentration augments. X-ray diffraction analysis reveals that all films are polycrystal-line with tetragonal structure, (110) plane being the strongest diffraction peak. The crystallite size calculated by the Debye Scher-rer’s formula decreases from 11.92 to 8.54 nm when Al concentration increases from 0 to 5 wt.%. AFM images showed grains uni-formly distributed in the deposited films. An average transmittance greater than 80% was measured for the films and an en-ergy gap value of about 3.9 eV was deduced from the optical analysis. Finally, the photosensitivity properties like current-voltage characteristics, ION/IOFF ratio, growth and decay time are studied and reported. Also, we have calculated the trap depth energy using the decay portion of the rise and decay curve photocurrent.展开更多
In this study, we have explored the ways to fabricate and optimize high-quality ultrathin YBa2 Cu3 O7-δ(YBCO) films grown on single-crystal(001) SrTiO3 substrates. Nearly atomic-flat YBCO films are obtained by pulsed...In this study, we have explored the ways to fabricate and optimize high-quality ultrathin YBa2 Cu3 O7-δ(YBCO) films grown on single-crystal(001) SrTiO3 substrates. Nearly atomic-flat YBCO films are obtained by pulsed laser deposition.Our result shows that the termination of SrTiO3 has only a negligible effect on the properties of YBCO. In contrast, we found that capping a non-superconducting oxide layer can generally enhance the superconductivity of YBCO. PrBa2 Cu3 O7,La2 CuO4, LaMnO3, SrTiO3, and LaAlO3 have been examined as capping layers, and the minimum thickness of superconducting YBCO with capping is ~ 2 unit cells–3 unit cells. This result might be useful in constructing good-performance YBCO-based field effect devices.展开更多
Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations （ULSIs） was provided. Diffusion coefficients of Cu in Co at l...Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations （ULSIs） was provided. Diffusion coefficients of Cu in Co at low temperature were determined to analyze Cu migration to Co surface layer. The diffusion depths were analyzed using X-ray photoelectron spectroscopy （XPS） depth profile to investigate the diffusion effect of Cu in Co at different temperatures. The possible pretreatment temperature and time of barrier layer can be predicted according to the diffusion coefficients of Cu in Co.展开更多
Cu-W thin film with high W content was deposited by dual-target DC-magnetron co-sputtering technology.Effects of the substrates surface treating technique on the adhesive strength of Cu-W thin films were studied.It is...Cu-W thin film with high W content was deposited by dual-target DC-magnetron co-sputtering technology.Effects of the substrates surface treating technique on the adhesive strength of Cu-W thin films were studied.It is found that the technique of ion beam assisting bombardment implanting of W particles can remarkably improve the adhesive property of Cu-W thin films. Indentation and scratching test show that,the critical load is doubled over than the sample only sputter-cleaned by ion beam.The enhancing mechanism of ion beam assisting bombardment implanting of Cu-W thin films was analyzed.With the help of mid-energy Ar+ion beam,W atoms can diffuse into the Fe-substrate surface layer;Fe atoms in the substrate surface layer and W atoms interlace with one another;and microcosmic mechanical meshing and diffusing combination on atom-scale among the Fe and W atoms through the film/substrate interface can be formed.The wettability and thermal expansion properties of the W atoms diffusion zone containing plentiful W atoms are close to those of pure W or W-based Cu-W film.展开更多
Excellent epitaxial growth of supercon-ducting YBaCuOthin films have beenrealized on(100)SrTiOand(100)ZrOsubstrates by a planar rf or DC-magnetronsputtering apparatus with UHV system.Thequality of growth and the epita...Excellent epitaxial growth of supercon-ducting YBaCuOthin films have beenrealized on(100)SrTiOand(100)ZrOsubstrates by a planar rf or DC-magnetronsputtering apparatus with UHV system.Thequality of growth and the epitaxial orientationof the film strongly depended on substratetemperature,the substrate orientation and ox-ygen partial pressure.The films exhibitedsuperconducting onset at 92K and zero resist-ance at 90K with critical current density of展开更多
Precursor pastes were obtained by milling Cu-In alloys and Se powders. CulnSe2 thin films were successfully prepared by precursor layers, which were coated using these pastes, and were annealed in a H2 atmosphere. The...Precursor pastes were obtained by milling Cu-In alloys and Se powders. CulnSe2 thin films were successfully prepared by precursor layers, which were coated using these pastes, and were annealed in a H2 atmosphere. The pastes were tested by laser particle diameter analyzer, simultaneous thermogravimetric and differential thermal analysis instruments （TG-DTA）, and X-ray diffractometry （XRD）. Selenized films were characterized by XRD, scanning electron microscopy （SEM）, and energy dispersive spectroscopy （EDS）. The results indicate that chalcopyrite CuInSe2 is formed at 180℃ and the crystallinity of this phase is improved as the temperature rises. All the CuInSe2 thin films, which were annealed at various temperatures, exhibit the preferred orientation along the （112） plane. The compression of precursor layers before selenization step is one of the most essential factors for the preparation of perfect CuInSe2 thin films.展开更多
Cu films with thickness of 630-1300nm were deposited on glass substrates without heating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to 0.5, 1.0 and 1.5Pa respectively. The target voltage was...Cu films with thickness of 630-1300nm were deposited on glass substrates without heating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to 0.5, 1.0 and 1.5Pa respectively. The target voltage was fixed at 500V but the target current increased from 200 to 1150mA with Ar pressure increasing. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. At all the Ar pressures, the Cu films have mixture crystalline orientations of [111], [200] and [220] in the direction of the film growth. The film deposited at lower pressure shows more [111] orientation while that deposited at higher pressure has more [220] orientation. The amount of larger grains in the film prepared at 0.5Pa Ar pressure is slightly less than that prepared at 1.0Pa and 1.5Pa Ar pressures. The resistivities of the films prepared at three different Ar pressures represent few differences, about 3-4 times of that of bulk material. Besides the deposition rate increases with Ar pressure because of the increase in target current. The contribution of the bombardment of energetic reflected Argon atoms to these phenomena is discussed.展开更多
Cu2ZnSnS4 (CZTS) thin films were successfully prepared by sulfurization of ion bean sputtered precursors on soda-lime glass substrate. The single phase of stannite-type structure CZTS films were obtained as revealed i...Cu2ZnSnS4 (CZTS) thin films were successfully prepared by sulfurization of ion bean sputtered precursors on soda-lime glass substrate. The single phase of stannite-type structure CZTS films were obtained as revealed in EDS and XRD analysis when the ratios of the constituents of CZTS thin films are close to stoichiometric by optimizing the conditions of precursor preparation and sulfurization. A low sheet resistivity as about 0.156 Ω·cm and a high absorption coefficient as 1×104 cm-1 were achieved in this method by Hall effect measurements and UV-VIS spectrophotometer. The optical band-gap energy of the CZTS sample is about 1.51 eV, which is very close to the optimum value for a solar-cell absorber.展开更多
The TiN films were deposited on 316 L stainless steel substrates at low temperature by arc ion plating. The influences of substrate bias voltage and temperature on microstructure, residual stress and mechanical proper...The TiN films were deposited on 316 L stainless steel substrates at low temperature by arc ion plating. The influences of substrate bias voltage and temperature on microstructure, residual stress and mechanical properties of the films were investigated by EDS, SEM, XRD and nanoindenter tester, respectively. The results showed that the TiN films were highly oriented in（111） orientation with a face-centered cubic structure. With the increase of substrate bias voltage and temperature, the diffraction peak intensity increased sharply with simultaneous peak narrowing, and the small grain sizes increased from 6.2 to 13.8 nm. As the substrate temperature increased from 10 to 300℃, the residual compressive stress decreased sharply from 10.2 to 7.7 GPa, which caused the hardness to decrease from 33.1 to 30.6 GPa, while the adhesion strength increased sharply from 9.6 to 21 N.展开更多
CoPt thin films with various Cu contents varying from 0 vol.% to 21.5 vol.% were deposited on glass substrates by magnetron sputtering. The effects of Cu additive on the structural and magnetic properties and the orde...CoPt thin films with various Cu contents varying from 0 vol.% to 21.5 vol.% were deposited on glass substrates by magnetron sputtering. The effects of Cu additive on the structural and magnetic properties and the ordering temperature of CoPt films were investigated in detail. The results show that the Cu in CoPt films plays an important role in promoting the ordering parameter S and reducing the ordering temperature of CoPt films. A nearly perfect （001） texture was obtained in a CoPt film doped with 15.3 vol.% Cu. Besides, the preferred orientation of the CoPt film can be changed by annealing temperature. The perpendicular growth of the CoPt film is favored at a high annealing temperature.展开更多
Titanium nitride （TIN） films were deposited on AISI 304 stainless steel substrates using hollow cathode plasma physical vapor deposition （HC-PVD）. Titanium was introduced by eroding the Ti cathode nozzle and TiN w...Titanium nitride （TIN） films were deposited on AISI 304 stainless steel substrates using hollow cathode plasma physical vapor deposition （HC-PVD）. Titanium was introduced by eroding the Ti cathode nozzle and TiN was formed in the presence of a nitrogen plasma excited by radio frequency （RF）. The substrate bias voltage was varied from 0 to -300 V and the uniformity in film thickness, surface roughness, crystal size, microhardness and wear resistance for the film with a diameter of 20 mm was evaluated. Although the central zone of the plasma had the highest ion density, the film thickness did not vary appreciably across the sample. The results from atomic force microscopy （AFM） revealed a low surface roughness dominated by an island-like morphology with a similar crystal size on the entire surface. Higher microhardness was measured at the central zone of the sample. The sample treated at -200 V had excellent tribological properties and uniformity.展开更多
ZnO/Cu/ZnO transparent conductive thin films were prepared by RF sputtering deposition of ZnO target and DC sputtering deposition of Cu target on n-type （001） Si and glass substrates at room temperature. The mor- ph...ZnO/Cu/ZnO transparent conductive thin films were prepared by RF sputtering deposition of ZnO target and DC sputtering deposition of Cu target on n-type （001） Si and glass substrates at room temperature. The mor- phology, structure, optical, and electrical properties of the multilayer films were characterized by field emission scanning electron microscope （FESEM）, X-ray diffraction （XRD）, UV/Vis spectrophotometer, and Hall effect mea- surement system. The influence of Cu layer thickness and the oxygen pressure in sputtering atmosphere on the film properties were studied. ZnO/Cu/ZnO transparent conduc- tive film fabricated in pure Ar atmosphere with 10 nm Cu layer thickness has the best performance： resistivity of 2.3 × 10^-4 Ω.cm, carrier concentration of 6.44 × 10^16 cm-2, mobility of 4.51 cm2.（V.s）-1, and acceptable aver- age transmittance of 80 % in the visible range. The trans- mittance and conductivity of the films fabricated with oxygen are lower than those of the films fabricated without oxygen, which indicates that oxygen atmosphere does not improve the optical and electrical properties of ZnO/Cu/ ZnO films.展开更多
In this paper, the synthesis process of TiC+TiN multiple films on super-low-carbon stainless steels is reported. The TiC layer is coated as the first layer in the multiple film, the change of growth rate of the film o...In this paper, the synthesis process of TiC+TiN multiple films on super-low-carbon stainless steels is reported. The TiC layer is coated as the first layer in the multiple film, the change of growth rate of the film on the 316L Stainless steel is not same as the one on carbides substrates, while the mole ratio of CRi to TiCLi (mCH/TiCl4) is changed from 1.2 to 2.0. The Ti [C, N], as a kind of inter-layer between TiC and TiN layers, is helpful to improve the adhesion between the TiC and TiN layer. The cooling rate greatly influences the quality of the adhesion between the TiC+TiN film and substrates.展开更多
Metallic copper（Cu） films were deposited on a Si （100） substrate by unbalanced magnetron sputtering enhanced by radio-frequency plasma and external magnetic field confinement. The morphology and structure of the f...Metallic copper（Cu） films were deposited on a Si （100） substrate by unbalanced magnetron sputtering enhanced by radio-frequency plasma and external magnetic field confinement. The morphology and structure of the films were examined by scanning electron microscopy （SEM）, atomic force microscope （AFM） and X-ray diffraction （XRD）. The surface average roughness of the deposited Cu films was characterized by AFM data and resistivity was measured by a four-point probe. The results show that the Cu films deposited with radio-frequency discharge enhanced ionization and external magnetic field confinement have a smooth surface, low surface roughness and low resistivity. The reasons may be that the radio-frequency discharge and external magnetic field enhance the plasma density, which further improves the ion bombardment effect under the same bias voltage conditions. Ion bombardment can obviously influence the growth features and characteristics of the deposited Cu films.展开更多
Foreign body reactions to the wear debris and corrosion products from the implants,and bacterial infections are the main factors leading to the implant failures.In order to resolve these problems,the antibacterial TiN...Foreign body reactions to the wear debris and corrosion products from the implants,and bacterial infections are the main factors leading to the implant failures.In order to resolve these problems,the antibacterial TiN/Cu nanocomposite coatings with various N_(2) partial pressures were deposited on 304 stainless steels(SS)using an arc ion plating(AIP)system,named TiN/Cu-x(x=0.5,1.0,1.5 Pa).The results of X-ray diffraction analysis,energy-dispersive X-ray spectroscopy,and scanning electron microscopy showed that the N_(2) partial pressures determined the Cu contents,surface defects,and crystallite sizes of TiN/Cu nanocomposite coatings,which further influenced the comprehensive abilities.And the hardness and wear resistances of TiN/Cu coatings were enhanced with increase of the crystallite sizes.Under the co-actions of surface defects,crystallite sizes,and Cu content,TiN/Cu-1.0 and TiN/Cu-1.5 coatings possessed excellent corrosion resistance.Besides,the biological tests proved that all the TiN/Cu coatings showed no cytotoxicity with strong antibacterial ability.Among them,TiN/Cu-1.5 coating significantly promoted the cell proliferation,which is expected to be a novel antibacterial,corrosion-resistant,and wear-resistant coating on the surfaces of medical implants.展开更多
Thin films of copper indium gallium selenide Cu（In,Ga）Se2 （CIGS） were prepared by sequential elemental layer deposition in vacuum at room temperature. The as-deposited films were heated in vacuum for compound form...Thin films of copper indium gallium selenide Cu（In,Ga）Se2 （CIGS） were prepared by sequential elemental layer deposition in vacuum at room temperature. The as-deposited films were heated in vacuum for compound formation, and were studied at temperature as high as 1250℃ for the first time. These films were concurrently studied for their structural properties by X-ray diffraction （XRD） technique. The XRD analyses include phase transition studies, grain size variation and microstrain measurements with the reaction temperature and time.It has been observed that there are three distinct regions of variation in all these parameters. These regions belong to three temperature regimes： 〈450℃, 450-950℃, and 〉950℃. It is also seen that the compound formation starts at 250℃, with ternary phases appearing at 350℃ or above. Whereas, there is another phase shift at 950℃ without any preference to the quaternary compound.展开更多
基金support of the laboratory of active components and materials,Oum El Bouaghi University.
文摘Transparent conducting aluminum doped tin oxide thin films were prepared by sol-gel dip coating method with differ-ent Al concentrations and characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-Vis spectrophotometry and photoconductivity study. The variation observed in the properties of the measured films agrees with a difference in the film's thickness, which decreases when Al concentration augments. X-ray diffraction analysis reveals that all films are polycrystal-line with tetragonal structure, (110) plane being the strongest diffraction peak. The crystallite size calculated by the Debye Scher-rer’s formula decreases from 11.92 to 8.54 nm when Al concentration increases from 0 to 5 wt.%. AFM images showed grains uni-formly distributed in the deposited films. An average transmittance greater than 80% was measured for the films and an en-ergy gap value of about 3.9 eV was deduced from the optical analysis. Finally, the photosensitivity properties like current-voltage characteristics, ION/IOFF ratio, growth and decay time are studied and reported. Also, we have calculated the trap depth energy using the decay portion of the rise and decay curve photocurrent.
基金Project supported by the National Key Research and Development Program of the Ministry of Science and Technology of China(Grants Nos.2017YFA0303002and 2016YFA0300204)the Fundamental Research Funds for the Central Universities,China
文摘In this study, we have explored the ways to fabricate and optimize high-quality ultrathin YBa2 Cu3 O7-δ(YBCO) films grown on single-crystal(001) SrTiO3 substrates. Nearly atomic-flat YBCO films are obtained by pulsed laser deposition.Our result shows that the termination of SrTiO3 has only a negligible effect on the properties of YBCO. In contrast, we found that capping a non-superconducting oxide layer can generally enhance the superconductivity of YBCO. PrBa2 Cu3 O7,La2 CuO4, LaMnO3, SrTiO3, and LaAlO3 have been examined as capping layers, and the minimum thickness of superconducting YBCO with capping is ~ 2 unit cells–3 unit cells. This result might be useful in constructing good-performance YBCO-based field effect devices.
文摘Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations （ULSIs） was provided. Diffusion coefficients of Cu in Co at low temperature were determined to analyze Cu migration to Co surface layer. The diffusion depths were analyzed using X-ray photoelectron spectroscopy （XPS） depth profile to investigate the diffusion effect of Cu in Co at different temperatures. The possible pretreatment temperature and time of barrier layer can be predicted according to the diffusion coefficients of Cu in Co.
基金Project(05JJ3005)supported by the Natural Science Foundation of Hunan Province,China
文摘Cu-W thin film with high W content was deposited by dual-target DC-magnetron co-sputtering technology.Effects of the substrates surface treating technique on the adhesive strength of Cu-W thin films were studied.It is found that the technique of ion beam assisting bombardment implanting of W particles can remarkably improve the adhesive property of Cu-W thin films. Indentation and scratching test show that,the critical load is doubled over than the sample only sputter-cleaned by ion beam.The enhancing mechanism of ion beam assisting bombardment implanting of Cu-W thin films was analyzed.With the help of mid-energy Ar+ion beam,W atoms can diffuse into the Fe-substrate surface layer;Fe atoms in the substrate surface layer and W atoms interlace with one another;and microcosmic mechanical meshing and diffusing combination on atom-scale among the Fe and W atoms through the film/substrate interface can be formed.The wettability and thermal expansion properties of the W atoms diffusion zone containing plentiful W atoms are close to those of pure W or W-based Cu-W film.
文摘Excellent epitaxial growth of supercon-ducting YBaCuOthin films have beenrealized on(100)SrTiOand(100)ZrOsubstrates by a planar rf or DC-magnetronsputtering apparatus with UHV system.Thequality of growth and the epitaxial orientationof the film strongly depended on substratetemperature,the substrate orientation and ox-ygen partial pressure.The films exhibitedsuperconducting onset at 92K and zero resist-ance at 90K with critical current density of
文摘Precursor pastes were obtained by milling Cu-In alloys and Se powders. CulnSe2 thin films were successfully prepared by precursor layers, which were coated using these pastes, and were annealed in a H2 atmosphere. The pastes were tested by laser particle diameter analyzer, simultaneous thermogravimetric and differential thermal analysis instruments （TG-DTA）, and X-ray diffractometry （XRD）. Selenized films were characterized by XRD, scanning electron microscopy （SEM）, and energy dispersive spectroscopy （EDS）. The results indicate that chalcopyrite CuInSe2 is formed at 180℃ and the crystallinity of this phase is improved as the temperature rises. All the CuInSe2 thin films, which were annealed at various temperatures, exhibit the preferred orientation along the （112） plane. The compression of precursor layers before selenization step is one of the most essential factors for the preparation of perfect CuInSe2 thin films.
基金The authors would like to thank Prof. Y.B. Wang and Mr. S. Liang of the Department of Material Physics for supporting AFM observations. The authors also would like to thank Ms. J.P. He of the State Key Laboratory for Advanced Metals and Materials for sup
文摘Cu films with thickness of 630-1300nm were deposited on glass substrates without heating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to 0.5, 1.0 and 1.5Pa respectively. The target voltage was fixed at 500V but the target current increased from 200 to 1150mA with Ar pressure increasing. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. At all the Ar pressures, the Cu films have mixture crystalline orientations of [111], [200] and [220] in the direction of the film growth. The film deposited at lower pressure shows more [111] orientation while that deposited at higher pressure has more [220] orientation. The amount of larger grains in the film prepared at 0.5Pa Ar pressure is slightly less than that prepared at 1.0Pa and 1.5Pa Ar pressures. The resistivities of the films prepared at three different Ar pressures represent few differences, about 3-4 times of that of bulk material. Besides the deposition rate increases with Ar pressure because of the increase in target current. The contribution of the bombardment of energetic reflected Argon atoms to these phenomena is discussed.
基金This work was financially supported by the National Natural Science Foundation (No.10574106), the Science & Technology Plan of Guangdong Province (No.2003C105005) and the Scientific Research Foundation for the Returned Overseas Chinese Scholars of Chinese State Education Ministry (No.(2004)176).
文摘Cu2ZnSnS4 (CZTS) thin films were successfully prepared by sulfurization of ion bean sputtered precursors on soda-lime glass substrate. The single phase of stannite-type structure CZTS films were obtained as revealed in EDS and XRD analysis when the ratios of the constituents of CZTS thin films are close to stoichiometric by optimizing the conditions of precursor preparation and sulfurization. A low sheet resistivity as about 0.156 Ω·cm and a high absorption coefficient as 1×104 cm-1 were achieved in this method by Hall effect measurements and UV-VIS spectrophotometer. The optical band-gap energy of the CZTS sample is about 1.51 eV, which is very close to the optimum value for a solar-cell absorber.
基金Projects(51401128,51275095) supported by the National Natural Science Foundation of ChinaProject(SKLRS-2013-MS-03) supported by the Open Fund from the State Key Laboratory of Robotics and System,China
文摘The TiN films were deposited on 316 L stainless steel substrates at low temperature by arc ion plating. The influences of substrate bias voltage and temperature on microstructure, residual stress and mechanical properties of the films were investigated by EDS, SEM, XRD and nanoindenter tester, respectively. The results showed that the TiN films were highly oriented in（111） orientation with a face-centered cubic structure. With the increase of substrate bias voltage and temperature, the diffraction peak intensity increased sharply with simultaneous peak narrowing, and the small grain sizes increased from 6.2 to 13.8 nm. As the substrate temperature increased from 10 to 300℃, the residual compressive stress decreased sharply from 10.2 to 7.7 GPa, which caused the hardness to decrease from 33.1 to 30.6 GPa, while the adhesion strength increased sharply from 9.6 to 21 N.
基金supported by the Natural Science Foundation of China (No. 60776008)the Program for New Century Excellent Talents in Universities, China (No. NECT-07-0527)the Key Project of Chinese Ministry of Education (No. 207020)
文摘CoPt thin films with various Cu contents varying from 0 vol.% to 21.5 vol.% were deposited on glass substrates by magnetron sputtering. The effects of Cu additive on the structural and magnetic properties and the ordering temperature of CoPt films were investigated in detail. The results show that the Cu in CoPt films plays an important role in promoting the ordering parameter S and reducing the ordering temperature of CoPt films. A nearly perfect （001） texture was obtained in a CoPt film doped with 15.3 vol.% Cu. Besides, the preferred orientation of the CoPt film can be changed by annealing temperature. The perpendicular growth of the CoPt film is favored at a high annealing temperature.
基金Supported by National Natural Science Foundation of China (Nos.10775036, 50773015)Program for New Century Excellent Talents in University in ChinaCity University of Hong Kong Strategic Research of China (No.7002138)
文摘Titanium nitride （TIN） films were deposited on AISI 304 stainless steel substrates using hollow cathode plasma physical vapor deposition （HC-PVD）. Titanium was introduced by eroding the Ti cathode nozzle and TiN was formed in the presence of a nitrogen plasma excited by radio frequency （RF）. The substrate bias voltage was varied from 0 to -300 V and the uniformity in film thickness, surface roughness, crystal size, microhardness and wear resistance for the film with a diameter of 20 mm was evaluated. Although the central zone of the plasma had the highest ion density, the film thickness did not vary appreciably across the sample. The results from atomic force microscopy （AFM） revealed a low surface roughness dominated by an island-like morphology with a similar crystal size on the entire surface. Higher microhardness was measured at the central zone of the sample. The sample treated at -200 V had excellent tribological properties and uniformity.
基金financially supported by the National Nature Science Foundation of China (No. 21071098)the Project of International Cooperation of the Ministry of Science and Technology of China (No. 2011DFA50530)the Nanotechnology Program of Shanghai Science & Technology Committee (No. 12nm0504800)
文摘ZnO/Cu/ZnO transparent conductive thin films were prepared by RF sputtering deposition of ZnO target and DC sputtering deposition of Cu target on n-type （001） Si and glass substrates at room temperature. The mor- phology, structure, optical, and electrical properties of the multilayer films were characterized by field emission scanning electron microscope （FESEM）, X-ray diffraction （XRD）, UV/Vis spectrophotometer, and Hall effect mea- surement system. The influence of Cu layer thickness and the oxygen pressure in sputtering atmosphere on the film properties were studied. ZnO/Cu/ZnO transparent conduc- tive film fabricated in pure Ar atmosphere with 10 nm Cu layer thickness has the best performance： resistivity of 2.3 × 10^-4 Ω.cm, carrier concentration of 6.44 × 10^16 cm-2, mobility of 4.51 cm2.（V.s）-1, and acceptable aver- age transmittance of 80 % in the visible range. The trans- mittance and conductivity of the films fabricated with oxygen are lower than those of the films fabricated without oxygen, which indicates that oxygen atmosphere does not improve the optical and electrical properties of ZnO/Cu/ ZnO films.
文摘In this paper, the synthesis process of TiC+TiN multiple films on super-low-carbon stainless steels is reported. The TiC layer is coated as the first layer in the multiple film, the change of growth rate of the film on the 316L Stainless steel is not same as the one on carbides substrates, while the mole ratio of CRi to TiCLi (mCH/TiCl4) is changed from 1.2 to 2.0. The Ti [C, N], as a kind of inter-layer between TiC and TiN layers, is helpful to improve the adhesion between the TiC and TiN layer. The cooling rate greatly influences the quality of the adhesion between the TiC+TiN film and substrates.
基金National Natural Science Foundation of China(Nos.50277003,10505005)
文摘Metallic copper（Cu） films were deposited on a Si （100） substrate by unbalanced magnetron sputtering enhanced by radio-frequency plasma and external magnetic field confinement. The morphology and structure of the films were examined by scanning electron microscopy （SEM）, atomic force microscope （AFM） and X-ray diffraction （XRD）. The surface average roughness of the deposited Cu films was characterized by AFM data and resistivity was measured by a four-point probe. The results show that the Cu films deposited with radio-frequency discharge enhanced ionization and external magnetic field confinement have a smooth surface, low surface roughness and low resistivity. The reasons may be that the radio-frequency discharge and external magnetic field enhance the plasma density, which further improves the ion bombardment effect under the same bias voltage conditions. Ion bombardment can obviously influence the growth features and characteristics of the deposited Cu films.
基金financially supported by National Key Research and Development Program of China (Nos. 2018YFC1106601 and 2016YFC1100601)Liaoning Revitalization Talents Program (No. XLYC1807069)+1 种基金National Natural Science Foundation of China (Nos. 51631009 and 31870954)Key Projects for Foreign Cooperation of Bureau of International Cooperation Chinese Academy of Sciences (No. 174321KYSB20180006)
文摘Foreign body reactions to the wear debris and corrosion products from the implants,and bacterial infections are the main factors leading to the implant failures.In order to resolve these problems,the antibacterial TiN/Cu nanocomposite coatings with various N_(2) partial pressures were deposited on 304 stainless steels(SS)using an arc ion plating(AIP)system,named TiN/Cu-x(x=0.5,1.0,1.5 Pa).The results of X-ray diffraction analysis,energy-dispersive X-ray spectroscopy,and scanning electron microscopy showed that the N_(2) partial pressures determined the Cu contents,surface defects,and crystallite sizes of TiN/Cu nanocomposite coatings,which further influenced the comprehensive abilities.And the hardness and wear resistances of TiN/Cu coatings were enhanced with increase of the crystallite sizes.Under the co-actions of surface defects,crystallite sizes,and Cu content,TiN/Cu-1.0 and TiN/Cu-1.5 coatings possessed excellent corrosion resistance.Besides,the biological tests proved that all the TiN/Cu coatings showed no cytotoxicity with strong antibacterial ability.Among them,TiN/Cu-1.5 coating significantly promoted the cell proliferation,which is expected to be a novel antibacterial,corrosion-resistant,and wear-resistant coating on the surfaces of medical implants.
文摘Thin films of copper indium gallium selenide Cu（In,Ga）Se2 （CIGS） were prepared by sequential elemental layer deposition in vacuum at room temperature. The as-deposited films were heated in vacuum for compound formation, and were studied at temperature as high as 1250℃ for the first time. These films were concurrently studied for their structural properties by X-ray diffraction （XRD） technique. The XRD analyses include phase transition studies, grain size variation and microstrain measurements with the reaction temperature and time.It has been observed that there are three distinct regions of variation in all these parameters. These regions belong to three temperature regimes： 〈450℃, 450-950℃, and 〉950℃. It is also seen that the compound formation starts at 250℃, with ternary phases appearing at 350℃ or above. Whereas, there is another phase shift at 950℃ without any preference to the quaternary compound.
