回顾了在 Ti Ni二元系合金基础上发展起来的 Ti Ni-X三元系高温形状记忆合金及 Ni Al系高温形状记忆合金。重点研究了 Ti Ni Pd系合金成分、相变温度和相变滞后的关系。结果表明 :当 Pd的原子百分数大于3 3 %,相变点的增加尤为显著 ,Pd...回顾了在 Ti Ni二元系合金基础上发展起来的 Ti Ni-X三元系高温形状记忆合金及 Ni Al系高温形状记忆合金。重点研究了 Ti Ni Pd系合金成分、相变温度和相变滞后的关系。结果表明 :当 Pd的原子百分数大于3 3 %,相变点的增加尤为显著 ,Pd的原子百分数提高 1 %,将导致合金的相变温度升高 2 0℃ ,当 Pd的原子百分数为 4 0 %时 ,Ms点可达 3 79.8℃。温度滞后ΔT随 Pd含量的增加基本不变 ,只是在 Pd原子百分数达到4 0 %时ΔT略有增加。相变热ΔH随 Pd含量增大呈线性增加 。展开更多
Amorphous thin films of Ti51.78Ni22.24Pd25.98 alloys were deposited onto n-type（100） Si wafer by radio frequency magnetron sputtering. From X-ray diffraction patterns, the crystallization temperature of thin film on...Amorphous thin films of Ti51.78Ni22.24Pd25.98 alloys were deposited onto n-type（100） Si wafer by radio frequency magnetron sputtering. From X-ray diffraction patterns, the crystallization temperature of thin film on Si wafer is found to be higher than 553.1℃. The film heated at 750℃ for 1h quite crystallizes along with some precipitation, but at 550℃ it partially crystallizes. With heating for 50h at 450℃ before crystallization, the film will contain more B19′ phases after succeeding heat-treatment at 650℃, but less B19′ phases after 750℃ treatment are found. The fracture morphology of the film heated at 550℃ shows a flat pattern with more steps, whereas that of the film preparing at 750℃ displays a well-defined fine granulation structure. 550℃-heated film is harder than as-deposited film because of good cohesion between film and Si wafer.展开更多
基金Project(20020248037) supported by the Specialized Research Fund for the Doctoral Program of Higher Education ofChina Project(02DJ14042) supported by the Science and Technology Commission of the Shanghai Municipal Government , China
文摘Amorphous thin films of Ti51.78Ni22.24Pd25.98 alloys were deposited onto n-type（100） Si wafer by radio frequency magnetron sputtering. From X-ray diffraction patterns, the crystallization temperature of thin film on Si wafer is found to be higher than 553.1℃. The film heated at 750℃ for 1h quite crystallizes along with some precipitation, but at 550℃ it partially crystallizes. With heating for 50h at 450℃ before crystallization, the film will contain more B19′ phases after succeeding heat-treatment at 650℃, but less B19′ phases after 750℃ treatment are found. The fracture morphology of the film heated at 550℃ shows a flat pattern with more steps, whereas that of the film preparing at 750℃ displays a well-defined fine granulation structure. 550℃-heated film is harder than as-deposited film because of good cohesion between film and Si wafer.
