Amorphous thin films of Ti51.78Ni22.24Pd25.98 alloys were deposited onto n-type（100） Si wafer by radio frequency magnetron sputtering. From X-ray diffraction patterns, the crystallization temperature of thin film on...Amorphous thin films of Ti51.78Ni22.24Pd25.98 alloys were deposited onto n-type（100） Si wafer by radio frequency magnetron sputtering. From X-ray diffraction patterns, the crystallization temperature of thin film on Si wafer is found to be higher than 553.1℃. The film heated at 750℃ for 1h quite crystallizes along with some precipitation, but at 550℃ it partially crystallizes. With heating for 50h at 450℃ before crystallization, the film will contain more B19′ phases after succeeding heat-treatment at 650℃, but less B19′ phases after 750℃ treatment are found. The fracture morphology of the film heated at 550℃ shows a flat pattern with more steps, whereas that of the film preparing at 750℃ displays a well-defined fine granulation structure. 550℃-heated film is harder than as-deposited film because of good cohesion between film and Si wafer.展开更多
基金Project(20020248037) supported by the Specialized Research Fund for the Doctoral Program of Higher Education ofChina Project(02DJ14042) supported by the Science and Technology Commission of the Shanghai Municipal Government , China
文摘Amorphous thin films of Ti51.78Ni22.24Pd25.98 alloys were deposited onto n-type（100） Si wafer by radio frequency magnetron sputtering. From X-ray diffraction patterns, the crystallization temperature of thin film on Si wafer is found to be higher than 553.1℃. The film heated at 750℃ for 1h quite crystallizes along with some precipitation, but at 550℃ it partially crystallizes. With heating for 50h at 450℃ before crystallization, the film will contain more B19′ phases after succeeding heat-treatment at 650℃, but less B19′ phases after 750℃ treatment are found. The fracture morphology of the film heated at 550℃ shows a flat pattern with more steps, whereas that of the film preparing at 750℃ displays a well-defined fine granulation structure. 550℃-heated film is harder than as-deposited film because of good cohesion between film and Si wafer.
