Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method

The resistive switching characteristics of TiO_2 nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the supply of Ti atoms for growth of the TiO_2 nanowires, making the preparation straightforward. It also acts as a bottom electrode for the device. A top Al electrode was fabricated by e-beam evaporation process. The Al/TiO_2 nanowire networks/Ti device fabricated in this way displayed a highly repeatable and electroforming-free bipolar resistive behavior with retention for more than 10~4 s and an OFF/ON ratio of approximately 70. The switching mechanism of this Al/TiO_2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field. This provides a facile way to obtain metal oxide nanowire-based Re RAM device in the future.

Analysis of optoelectronic properties of TiO_2 nanowiers/Si heterojunction arrays

The optoelectronic properties of n-TiO2NW/p-Si heterojunction fabricated by depositing TiO2 nanowires on a p-Si substrate are studied. Under excitation at a wavelength of 370 nm, the TiO2 nanowires produce a light emission at 435 nm due to the emission of free excitons. The I-V characteristics are measured to investigate the heterojunction effects under the dark environment and ultraviolet （UV） illumination, n-TiOzNW/p-Si has a p-n junction formed in the n-TiOz/p-Si beterojunction. TiO2NW/Si photodiode produces a pbotocurrent larger than dark current under UV illumination. It is observed that UV photons are absorbed in TiO2 and the heterojunction shows a 0.034-A/W responsivity at 4-V reverse bias.

Fabrication and Growth Mechanism of Single-crystalline Rutile TiO_2 Nanowires by Liquid-phase Deposition Process in a Porous Alumina Template

TiO2 nanowire arrays were successfully fabricated by liquid-phase deposition method using porous alumina templates. The obtained TiO2 nanowires were characterized using Raman spectroscopy, X-ray diffraction （XRD）, scanning electron microscopy （SEM）, field emission scanning electron microscopy （FE- SEM）, transmission electron microscopy （TEM）, and selected area electron diffraction （SAED） analysis. Results of electron microscopic observations indicated that the nanowires were smooth and uniform with a diameter of about 50-80 nm and several micrometers in length. SAED, Raman, and XRD mea- surements showed that TiO2 nanowires were single-crystalline with a pure rutile structure after heating at 800 ~C for 10 h. In this situation, the nanowire constituents grew preferentially along the 〈001〉 direction. Furthermore, the formation process and mechanistic study of the Ti02 nanowire arrays were proposed and discussed in detail. The nanowires are clearly produced by the deposition of TiO2 particles on the inner wall of the template nanochannels.

Effect of MWCNT Inclusion in TiO_2 Nanowire Array Film on the Photoelectrochemical Performance

Rutile TiO2 nanowire array films with multi-walled carbon nanotube （MWCNT） inclusion perpendicularly grown on fluorine-doped tin oxide （FTO） substrate were prepared by a facile hydrothermal method. The absorption edges of the TiO2 nanowire array films are blue-shifted with increasing MWCNT content. The resistance of the TiO2 nanowire array film is decreased by MWCNT inclusion. The optimum TiO2/MWCNT molar ratio in the feedstock is 1：0.1. For the TiO2 nanowire array film with MWCNT inclusion served as electrode in dye-sensitized solar cell （DSSC）, an overall 194% increase of photoelectric conversion efficiency has been achieved.

Micro-scale hierarchical photoanode for quantum-dot-sensitized solar cells based on Ti02 nanowires

This paper proposed a new architecture design for nanowire-based quantum-dot-sensitized solar cells to improve the photovoltaic performance. Microstructured rough substrate was used to increase the surface area of the photoanode without influence on charge carrier transport in the system. Compared to conventional devices, the short circuit current density and power conversion efficiency were enhanced by 50%. And the technology can be widely used in the photoelectroehemical （PEC） field, and it can be combined with other hierarchical nanostructures.