The effects of BaCu（B2Os） （BCB） addition on the microstructure, phase formation, and microwave dielectric proper- ties of BasNb4015-BaWO4 ceramic are investigated. As a sintering aid, BaCu（B2Os） ceramic could ef...The effects of BaCu（B2Os） （BCB） addition on the microstructure, phase formation, and microwave dielectric proper- ties of BasNb4015-BaWO4 ceramic are investigated. As a sintering aid, BaCu（B2Os） ceramic could effectively lower the sintering temperature of BasNb4015-BaWO4 ceramic from 1100 ℃ to 950 ℃ due to the liquid-phase effect. Meanwhile, BaCu（B2Os） addition effectively improves the densification of BasNb4015-BaWO4 ceramic and significantly influences the microwave dielectric properties. X-ray diffraction analysis reveals that BasNb4015 and BaWO4 coexist with no crystal phase of BaCu（B2Os） in the sintered ceramics. The BasNb4015-BaWO4 ceramics with 1.0 wt% BaCu（B2Os） sintered at 950 ℃ for 2 h presents good microwave dielectric properties of er = 19.0, high Q× f of 33802 GHz and low vf of 2.5 ppm/℃.展开更多
The microwave dielectric properties and microstructure of BaTi4.3ZnyO9.6＋y ＋0.02 mol% SnO2＋0.01 mol% MnCO3＋x mol% Nb2O5（x=0-0.05, y=0-0.08） system ceramics were studied as a function of the amount of ZnO and Nb2...The microwave dielectric properties and microstructure of BaTi4.3ZnyO9.6＋y ＋0.02 mol% SnO2＋0.01 mol% MnCO3＋x mol% Nb2O5（x=0-0.05, y=0-0.08） system ceramics were studied as a function of the amount of ZnO and Nb2O5 doped. Addition of （y=0-0.05） ZnO and （x=0-0.025） Nb2O5 enhanced the reactivity and decreased the sintering temperature effectively. It also increased the dielectric constant ε r and quality factor Q（=1/tan 8） of the system due to the substitution of Ti^4＋ ions with incorporating Zn^2＋and Nb^5＋ ions, which was analyzed by the reaction ZnO＋Nb2O5＋ 3 TiTxTi →ZnTi＋ 2NbTi＋3TiO2. When the system doped with （y=0.05） ZnO and （x=0.025） Nb205 were sintered at 1 160 ℃ for 6 h, the εr. Qf0 value and rfwere 36.5, 42 000 GHz, and＋1.8 ppm/℃, respectively, at 5 GHz.展开更多
The microwave dielectric properties of ZrO2-SnO2-TiO2 （ZST） system ceramics were studied as a function of the amount of Sb2O5 dopant. With the addition of 0-0.5% Sb2O5（molar ratio）, the substitution of Ti4^＋ ions...The microwave dielectric properties of ZrO2-SnO2-TiO2 （ZST） system ceramics were studied as a function of the amount of Sb2O5 dopant. With the addition of 0-0.5% Sb2O5（molar ratio）, the substitution of Ti4^＋ ions with Sb^5＋ ions decreased the sintering temperature and increased the quality factor Q due to the reduction of oxygen vacancies, When the amount of Sb^5＋ increased further （above 0.5%）, Q was decreased by increasing the electron concentration. When the system doped with 0.5% Sb2O5 was sintered at 1 150℃ for 6 h, the relative dielectric constant ε, Qf0, and the temperature coefficient of resonant frequency （TCF） were 38.46, 44 500 GHz, 20.0×10^-6/℃, respectively, at 6 GHz,展开更多
To investigate the correct reaction sequence of BaO-Al2O3-5TiO2 system, powders calcined at different temperatures are analyzed by x-ray diffraction. The results show that the source phase BaCO3 decomposes below 800&#...To investigate the correct reaction sequence of BaO-Al2O3-5TiO2 system, powders calcined at different temperatures are analyzed by x-ray diffraction. The results show that the source phase BaCO3 decomposes below 800°C, TiO2 and Al2O3 start to consume at 900 and 1100°C, respectively. BaTi4O9 phase appears at 1000°C while BaAl2Ti5O14 phase starts to reveal at 1200°C. As the temperature increases, the density, dielectric constant and quality factor of the BaAl2Ti5O14 ceramic increase and keep unchanged at 1350°C. The dielectric properties of BaAl2Ti5O14 ceramic sintered at 1350°C for 3h are: εr=35.8, Q×f=5130GHz, τf=-6.8ppm/°C.展开更多
Varistor ceramics of ZnO Bi 2O 3 TiO 2 Sb 2O 3 system have been fabricated by introducing pre fabricated ZnO seed grains with different size distributions respectively. The results show that the varistor properties we...Varistor ceramics of ZnO Bi 2O 3 TiO 2 Sb 2O 3 system have been fabricated by introducing pre fabricated ZnO seed grains with different size distributions respectively. The results show that the varistor properties were significantly influenced by the size of introduced seed grains, and introducing larger seed grains is more advantageous to the modification of microstructure and the improvement of varistor properties. The varistor properties were considerably improved with a moderately increased sintering temperature or time, whereas degraded apparently when the sintering temperature or time was excessively increased. Compared with the sintering time, the sintering temperature plays a more critical role in determining the varistor properties. By introducing pre fabricated ZnO seed grains into the original powders, low voltage ZnO varistor ceramics possessing the desired electrical properties have been produced with a sintering temperature of about 1 210 ℃ and a sintering temperature of 2～2.5 h. [展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51372031,61171047,51132003,and 61271038)the Program for New Century Excellent Talents in University,China(Grant No.NCET-12-0090)Science Fund from the Science and Technology Department of Sichuan Province,China(Grant No.2013GZX0144)
文摘The effects of BaCu（B2Os） （BCB） addition on the microstructure, phase formation, and microwave dielectric proper- ties of BasNb4015-BaWO4 ceramic are investigated. As a sintering aid, BaCu（B2Os） ceramic could effectively lower the sintering temperature of BasNb4015-BaWO4 ceramic from 1100 ℃ to 950 ℃ due to the liquid-phase effect. Meanwhile, BaCu（B2Os） addition effectively improves the densification of BasNb4015-BaWO4 ceramic and significantly influences the microwave dielectric properties. X-ray diffraction analysis reveals that BasNb4015 and BaWO4 coexist with no crystal phase of BaCu（B2Os） in the sintered ceramics. The BasNb4015-BaWO4 ceramics with 1.0 wt% BaCu（B2Os） sintered at 950 ℃ for 2 h presents good microwave dielectric properties of er = 19.0, high Q× f of 33802 GHz and low vf of 2.5 ppm/℃.
基金the Natural Science Foundation of Tianjin (No. 06YFJMJC01000)
文摘The microwave dielectric properties and microstructure of BaTi4.3ZnyO9.6＋y ＋0.02 mol% SnO2＋0.01 mol% MnCO3＋x mol% Nb2O5（x=0-0.05, y=0-0.08） system ceramics were studied as a function of the amount of ZnO and Nb2O5 doped. Addition of （y=0-0.05） ZnO and （x=0-0.025） Nb2O5 enhanced the reactivity and decreased the sintering temperature effectively. It also increased the dielectric constant ε r and quality factor Q（=1/tan 8） of the system due to the substitution of Ti^4＋ ions with incorporating Zn^2＋and Nb^5＋ ions, which was analyzed by the reaction ZnO＋Nb2O5＋ 3 TiTxTi →ZnTi＋ 2NbTi＋3TiO2. When the system doped with （y=0.05） ZnO and （x=0.025） Nb205 were sintered at 1 160 ℃ for 6 h, the εr. Qf0 value and rfwere 36.5, 42 000 GHz, and＋1.8 ppm/℃, respectively, at 5 GHz.
基金Supported by Natural Science Foundation of Tianjin (No.06YFJMJC01000) the High Technique Research and Development Pro-gram of China (No.2001AA325110).
文摘The microwave dielectric properties of ZrO2-SnO2-TiO2 （ZST） system ceramics were studied as a function of the amount of Sb2O5 dopant. With the addition of 0-0.5% Sb2O5（molar ratio）, the substitution of Ti4^＋ ions with Sb^5＋ ions decreased the sintering temperature and increased the quality factor Q due to the reduction of oxygen vacancies, When the amount of Sb^5＋ increased further （above 0.5%）, Q was decreased by increasing the electron concentration. When the system doped with 0.5% Sb2O5 was sintered at 1 150℃ for 6 h, the relative dielectric constant ε, Qf0, and the temperature coefficient of resonant frequency （TCF） were 38.46, 44 500 GHz, 20.0×10^-6/℃, respectively, at 6 GHz,
文摘To investigate the correct reaction sequence of BaO-Al2O3-5TiO2 system, powders calcined at different temperatures are analyzed by x-ray diffraction. The results show that the source phase BaCO3 decomposes below 800°C, TiO2 and Al2O3 start to consume at 900 and 1100°C, respectively. BaTi4O9 phase appears at 1000°C while BaAl2Ti5O14 phase starts to reveal at 1200°C. As the temperature increases, the density, dielectric constant and quality factor of the BaAl2Ti5O14 ceramic increase and keep unchanged at 1350°C. The dielectric properties of BaAl2Ti5O14 ceramic sintered at 1350°C for 3h are: εr=35.8, Q×f=5130GHz, τf=-6.8ppm/°C.
文摘Varistor ceramics of ZnO Bi 2O 3 TiO 2 Sb 2O 3 system have been fabricated by introducing pre fabricated ZnO seed grains with different size distributions respectively. The results show that the varistor properties were significantly influenced by the size of introduced seed grains, and introducing larger seed grains is more advantageous to the modification of microstructure and the improvement of varistor properties. The varistor properties were considerably improved with a moderately increased sintering temperature or time, whereas degraded apparently when the sintering temperature or time was excessively increased. Compared with the sintering time, the sintering temperature plays a more critical role in determining the varistor properties. By introducing pre fabricated ZnO seed grains into the original powders, low voltage ZnO varistor ceramics possessing the desired electrical properties have been produced with a sintering temperature of about 1 210 ℃ and a sintering temperature of 2～2.5 h. [
基金Supported by Fundamental Research Funds for Central Universities(HEUCF201403002)Advanced Technique Project Funds of the Manufacture and Information Ministry
