We improved the photovoltaic properties of Cu_2O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by a sputtering apparatus with our newly developed multi-chamber system. We also o...We improved the photovoltaic properties of Cu_2O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by a sputtering apparatus with our newly developed multi-chamber system. We also obtained the highest efficiency(3.21%) in an AZO/p-Cu_2O heterojunction solar cell prepared with optimized pre-sputtering conditions using our newly developed multi-chamber sputtering system. This value achieves the same or higher characteristics than AZO/Cu_2O solar cells with a similar structure prepared by the pulse laser deposition method.展开更多
Ti thin films were firstly deposited on glass substrates by magnetron sputtering method, then sintered the Ti thin films in air atmosphere and finally TiO2 transparence thin films on glass substrates were obtained. Th...Ti thin films were firstly deposited on glass substrates by magnetron sputtering method, then sintered the Ti thin films in air atmosphere and finally TiO2 transparence thin films on glass substrates were obtained. The structure and surface morphologies of the thin films were characterized by X-ray diffraction and SEM. The growth process of the thin films has been observed. The annealing time and annealing temperatures have an affect on the growth of the films.展开更多
The influence of amorphous TiO_2 seeding layers on the phase composition of lead magnesium niobate-lead titanate(0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3,PMN-PT) films deposited on Pt/Ti/SiO2/Si substrate by RF magnetron sputter...The influence of amorphous TiO_2 seeding layers on the phase composition of lead magnesium niobate-lead titanate(0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3,PMN-PT) films deposited on Pt/Ti/SiO2/Si substrate by RF magnetron sputtering was examined.The relation between seeding layer thickness and phase composition at different post annealing temperature was observed by XRD.The thickness of amorphous TiO_2 seeding layer and post annealing temperature had remarkable effects on PMN-PT film phase composition.When amorphous seeding layer becomes thick,a new phase of Nb2O5 exists in the films.Only when the seeding layer thickness is suitable,the film with pure perovskite phase can be attained.展开更多
In this work, structural and optical properties of the TiO2 films deposited on unheated substrates by dual cathode dc unbalanced magnetron sputtering at long substrate-target distance (ds-t) were studied. Titanium dio...In this work, structural and optical properties of the TiO2 films deposited on unheated substrates by dual cathode dc unbalanced magnetron sputtering at long substrate-target distance (ds-t) were studied. Titanium dioxide (TiO2) thin films were deposited on unheated Si (110) wafers, glass slides and carbon coated copper grids at different substrate to target (ds-t) distances. The structural properties of TiO2 thin films were characterized by X-ray diffraction (XRD) and transmission electron microcopy (TEM) with selected-area electron diffraction (SAED), surface morphology using atomic force microscopy (AFM) and optical transmission spectra using a spectrophotometer. XRD results show that TiO2 films deposited at various ds-t distances have only rutile crystal structure. The crystallinity and thickness of the films increased while the roughness decreased with decreasing ds-t distance. The refractive indices of the deposited films were found to be in the range of 2.51 - 2.82 and increased with decreasing ds-t distance.展开更多
This study demonstrates that magnetron-sputtered NbSe_(2)film can be used as a lubricant for space current-carrying sliding contact,which accommodates both metal-like conductivity and MoS_(2)-like lubricity.Deposition...This study demonstrates that magnetron-sputtered NbSe_(2)film can be used as a lubricant for space current-carrying sliding contact,which accommodates both metal-like conductivity and MoS_(2)-like lubricity.Deposition at low pressure and low energy is performed to avoid the generation of the interference phase of NbSe_(3).The composition,microstructure,and properties of the NbSe_(2)films are further tailored by controlling the sputtering current.At an appropriate current,the film changed from amorphous to crystalline,maintained a dense structure,and exhibited excellent comprehensive properties.Compared to the currently available electrical contact lubricating materials,the NbSe_(2)film exhibits a significant advantage under the combined vacuum and current-carrying conditions.The friction coefficient decreases from 0.25 to 0.02,the wear life increases more than seven times,and the electric noise reduces approximately 50%.展开更多
In the present study,WB_2(N) films are fabricated on silicon and YG8 substrates at different N_2 pressures by reactive magnetron sputtering.The influence of N_2 partial pressure(P_(N2)) on the film microstructure and ...In the present study,WB_2(N) films are fabricated on silicon and YG8 substrates at different N_2 pressures by reactive magnetron sputtering.The influence of N_2 partial pressure(P_(N2)) on the film microstructure and characteristics is studied systematically,including the chemical composition,crystalline structure,residual stress,surface roughness as well as the surface and the cross-section morphology.Meanwhile,nano-indentation and ball-on-disk tribometer are performed to analyze the mechanical and tribological properties of the films.The results show that the addition of nitrogen apparently leads to the change of the structure from(1 0 1) to(0 0 1) orientation then to the amorphous structure with the formation of BN phase.And the addition of nitrogen can greatly refine the grain size and microstructure of the films.Furthermore,the residual stress of the film is also found to change from tensile to compressive stress as a function of P_(N2),and the compressive stress increases with P_(N2),The WB_2(N) films with small nitrogen content,which are deposited at P_(N2) of 0.004 and 0.006 Pa,exhibit better mechanical,tribological and corrosion properties than those of other films.Further increase of nitrogen content accelerates the formation of BN phase and fast decreases the film hardness.In addition,the large N_2 partial pressure gives rise to the target poisoning accompanied by the increase of the target voltage and the decrease of the deposition rate.展开更多
The work is mainly to study the thermal stability including the phase stability, microstructure and tribo-mechanical properties of the AlB_2-type WB_2 and W–B–N(5.6 at.% N) films annealed in vacuum at various temper...The work is mainly to study the thermal stability including the phase stability, microstructure and tribo-mechanical properties of the AlB_2-type WB_2 and W–B–N(5.6 at.% N) films annealed in vacuum at various temperatures, which are deposited on Si and GY8 substrates by magnetron sputtering. For the WB_2 and W–B–N films deposited on Si wafers, as the annealing temperature increases from 700 to 1000 °C, a-WB(700 °C) and Mo_2B_5-type WB_2(1000 °C) are successively observed in the AlB_2-type WB_2 films, which show many cracks at the temperature ≥ 800 °C resulting in the performance failure; by contrast, only slight α-WB is observed at 1000 °C in the W–B–N films due to the stabilization eff ect of a-BN phase, and the hardness increases to 34.1 GPa fi rst due to the improved crystallinity and then decreases to 31.5 GPa ascribed to the formation of α-WB. For the WB_2 and the W–B–N films deposited on WC–Co substrates, both the WB_2 and W–B–N films react with the YG8(WC–Co) substrates leading to the formation of CoWB, CoW_2B_2 and CoW_3B_3 with the annealing temperature increasing to 900 °C; a large number of linear cracks occur on the surface of these two films annealed at ≥ 800 °C leading to the fi lm failure; after vacuum annealing at 700 °C, the friction performance of the W–B–N films is higher than that of the deposited W–B–N films, while the wear resistance of the WB_2 films shows a slight decrease compared with that of the deposited WB_2 films.展开更多
Tungsten-doped indium oxide (IWO) thin films were deposited on glass substrate by DC reactive magnetron sputtering. The effects of sputtering power and growth temperature on the structure, surface morphology, optical ...Tungsten-doped indium oxide (IWO) thin films were deposited on glass substrate by DC reactive magnetron sputtering. The effects of sputtering power and growth temperature on the structure, surface morphology, optical and electrical properties of IWO thin films were investigated. The thickness and surface morphology of the films are both closely dependent on the sputtering power and the substrate temperature. The transparency of the films decreases with the increase of the sputtering power but is not seriously influenced by substrate temperature. All the IWO thin film samples have high transmittance in near-infrared spectral range. With either the sputtering power or the growth temperature increases, the resistivity of the film decreases at the beginning and increases after the optimum parameters. The as-deposited IWO films with minimum resistivity of 6.4 10 4 cm were obtained at a growth temperature of225 C and sputteringpower of 40 W, with carrier mobility of 33.0 cm 2 V 1 s 1 and carrier concentration of 2.8 10 20 cm 3 and the average transmittance of about 81% in near-infrared region and about 87% in visible region.展开更多
Multicomponent oxide(Ga_(x)In_(1−x))_(2)O_(3)films are prepared on(0001)sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing.The optical properties and ban...Multicomponent oxide(Ga_(x)In_(1−x))_(2)O_(3)films are prepared on(0001)sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing.The optical properties and band structure evolution over the whole range of compositions in ternary compounds(Ga_(x)In_(1−x))_(2)O_(3)are investigated in detail.The X-ray diffraction spectra clearly indicate that(Ga_(x)In_(1−x))_(2)O_(3)films with Ga content varying from 0.11 to 0.55 have both cubic and monoclinic structures,and that for films with Ga content higher than 0.74,only the monoclinic structure appears.The transmittance of all films is greater than 86%in the visible range with sharp absorption edges and clear fringes.In addition,a blue shift of ultraviolet absorption edges from 380 to 250 nm is noted with increasing Ga content,indicating increasing band-gap energy from 3.61 to 4.64 eV.The experimental results lay a foundation for the application of transparent conductive compound(Ga_(x)In_(1−x))_(2)O_(3)thin films in photoelectric and photovoltaic industry,especially in display,light-emitting diode,and solar cell applications.展开更多
The In 2 O 3 : W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigate...The In 2 O 3 : W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigated. Results showed that both the carrier concentration and carrier mobility were increased with the doping of W. The IWO film with the lowest resistivity of 1.0×10 3 cm, highest carrier mobilityof 43.7 cm 2 V 1 s 1 and carrier concentration of 1.4×10 20 cm 3 was obtained at the content of 2.8 wt.%. The average optical transmittance from 300 nm to 900 nm reached 87.6%.展开更多
TiO 2 films have been deposited on glass substrates using DC reactive magnetron sputtering at different oxygen partial pressures from 0.10Pa to 0.65Pa.The transmittance (UV vis) and photoluminescence (PL) spectra of t...TiO 2 films have been deposited on glass substrates using DC reactive magnetron sputtering at different oxygen partial pressures from 0.10Pa to 0.65Pa.The transmittance (UV vis) and photoluminescence (PL) spectra of the films were recorded.The results of the UV vis spectra show that the deposition rate of the films decreased at oxygen partial pressure P(O 2)≥0.15Pa,the band gap increased from 3.48eV to 3.68eV for direct transition and from 3.27eV to 3.34eV for indirect transition with increasing the oxygen partial pressure.The PL spectra show convincingly that the transtion for films was indirect,and there were some oxygen defect energy levels at the band gap of the films.With increasing the O 2 partial pressure,the defect energy levels decreased.For the films sputtered at 0.35 and 0.65Pa there were two defect energy levels at 2.63eV and 2.41eV,corresponding to 0.72eV and 0.94eV below the conduction band for a band gap of 3.35eV,respectively.For the films sputtered at 0.10Pa and 0.15Pa,there was an energy band formed between 3.12eV and 2.06eV,corresponding to 0.23eV and 1.29eV below the conduction band.展开更多
基金partly supported by Grant-in-Aid for Scientific Research on Innovative Areas from the Ministry of Education, Culture, Sports, Science and Technology of Japan (No.15K04723)
文摘We improved the photovoltaic properties of Cu_2O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by a sputtering apparatus with our newly developed multi-chamber system. We also obtained the highest efficiency(3.21%) in an AZO/p-Cu_2O heterojunction solar cell prepared with optimized pre-sputtering conditions using our newly developed multi-chamber sputtering system. This value achieves the same or higher characteristics than AZO/Cu_2O solar cells with a similar structure prepared by the pulse laser deposition method.
基金The authors would like to thank the Hundred Talents Project of The Chinese Academy of SciencesScience and Technology Committ
文摘Ti thin films were firstly deposited on glass substrates by magnetron sputtering method, then sintered the Ti thin films in air atmosphere and finally TiO2 transparence thin films on glass substrates were obtained. The structure and surface morphologies of the thin films were characterized by X-ray diffraction and SEM. The growth process of the thin films has been observed. The annealing time and annealing temperatures have an affect on the growth of the films.
文摘The influence of amorphous TiO_2 seeding layers on the phase composition of lead magnesium niobate-lead titanate(0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3,PMN-PT) films deposited on Pt/Ti/SiO2/Si substrate by RF magnetron sputtering was examined.The relation between seeding layer thickness and phase composition at different post annealing temperature was observed by XRD.The thickness of amorphous TiO_2 seeding layer and post annealing temperature had remarkable effects on PMN-PT film phase composition.When amorphous seeding layer becomes thick,a new phase of Nb2O5 exists in the films.Only when the seeding layer thickness is suitable,the film with pure perovskite phase can be attained.
文摘In this work, structural and optical properties of the TiO2 films deposited on unheated substrates by dual cathode dc unbalanced magnetron sputtering at long substrate-target distance (ds-t) were studied. Titanium dioxide (TiO2) thin films were deposited on unheated Si (110) wafers, glass slides and carbon coated copper grids at different substrate to target (ds-t) distances. The structural properties of TiO2 thin films were characterized by X-ray diffraction (XRD) and transmission electron microcopy (TEM) with selected-area electron diffraction (SAED), surface morphology using atomic force microscopy (AFM) and optical transmission spectra using a spectrophotometer. XRD results show that TiO2 films deposited at various ds-t distances have only rutile crystal structure. The crystallinity and thickness of the films increased while the roughness decreased with decreasing ds-t distance. The refractive indices of the deposited films were found to be in the range of 2.51 - 2.82 and increased with decreasing ds-t distance.
基金The authors are grateful to the National Natural Science Foundation of China(Grant No.51775537)Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.Y202084)for financial support.
文摘This study demonstrates that magnetron-sputtered NbSe_(2)film can be used as a lubricant for space current-carrying sliding contact,which accommodates both metal-like conductivity and MoS_(2)-like lubricity.Deposition at low pressure and low energy is performed to avoid the generation of the interference phase of NbSe_(3).The composition,microstructure,and properties of the NbSe_(2)films are further tailored by controlling the sputtering current.At an appropriate current,the film changed from amorphous to crystalline,maintained a dense structure,and exhibited excellent comprehensive properties.Compared to the currently available electrical contact lubricating materials,the NbSe_(2)film exhibits a significant advantage under the combined vacuum and current-carrying conditions.The friction coefficient decreases from 0.25 to 0.02,the wear life increases more than seven times,and the electric noise reduces approximately 50%.
基金supported by the National Key Basic Research Program of China (973 Program,No.2012CB625100)the Natural Science Foundation of Liaoning Province of China (No.2013020093)
文摘In the present study,WB_2(N) films are fabricated on silicon and YG8 substrates at different N_2 pressures by reactive magnetron sputtering.The influence of N_2 partial pressure(P_(N2)) on the film microstructure and characteristics is studied systematically,including the chemical composition,crystalline structure,residual stress,surface roughness as well as the surface and the cross-section morphology.Meanwhile,nano-indentation and ball-on-disk tribometer are performed to analyze the mechanical and tribological properties of the films.The results show that the addition of nitrogen apparently leads to the change of the structure from(1 0 1) to(0 0 1) orientation then to the amorphous structure with the formation of BN phase.And the addition of nitrogen can greatly refine the grain size and microstructure of the films.Furthermore,the residual stress of the film is also found to change from tensile to compressive stress as a function of P_(N2),and the compressive stress increases with P_(N2),The WB_2(N) films with small nitrogen content,which are deposited at P_(N2) of 0.004 and 0.006 Pa,exhibit better mechanical,tribological and corrosion properties than those of other films.Further increase of nitrogen content accelerates the formation of BN phase and fast decreases the film hardness.In addition,the large N_2 partial pressure gives rise to the target poisoning accompanied by the increase of the target voltage and the decrease of the deposition rate.
基金supported by the National Natural Science Foundation of China (Nos. 51701157 and 51505378)the Natural Science Foundation of Shaanxi Province of China (No. 2017JQ5031)
文摘The work is mainly to study the thermal stability including the phase stability, microstructure and tribo-mechanical properties of the AlB_2-type WB_2 and W–B–N(5.6 at.% N) films annealed in vacuum at various temperatures, which are deposited on Si and GY8 substrates by magnetron sputtering. For the WB_2 and W–B–N films deposited on Si wafers, as the annealing temperature increases from 700 to 1000 °C, a-WB(700 °C) and Mo_2B_5-type WB_2(1000 °C) are successively observed in the AlB_2-type WB_2 films, which show many cracks at the temperature ≥ 800 °C resulting in the performance failure; by contrast, only slight α-WB is observed at 1000 °C in the W–B–N films due to the stabilization eff ect of a-BN phase, and the hardness increases to 34.1 GPa fi rst due to the improved crystallinity and then decreases to 31.5 GPa ascribed to the formation of α-WB. For the WB_2 and the W–B–N films deposited on WC–Co substrates, both the WB_2 and W–B–N films react with the YG8(WC–Co) substrates leading to the formation of CoWB, CoW_2B_2 and CoW_3B_3 with the annealing temperature increasing to 900 °C; a large number of linear cracks occur on the surface of these two films annealed at ≥ 800 °C leading to the fi lm failure; after vacuum annealing at 700 °C, the friction performance of the W–B–N films is higher than that of the deposited W–B–N films, while the wear resistance of the WB_2 films shows a slight decrease compared with that of the deposited WB_2 films.
基金supported by the National Natural Science Foundation of China (No. 50902006)the National High Technology Development 863 Program of China (No.2009AA03Z428)
文摘Tungsten-doped indium oxide (IWO) thin films were deposited on glass substrate by DC reactive magnetron sputtering. The effects of sputtering power and growth temperature on the structure, surface morphology, optical and electrical properties of IWO thin films were investigated. The thickness and surface morphology of the films are both closely dependent on the sputtering power and the substrate temperature. The transparency of the films decreases with the increase of the sputtering power but is not seriously influenced by substrate temperature. All the IWO thin film samples have high transmittance in near-infrared spectral range. With either the sputtering power or the growth temperature increases, the resistivity of the film decreases at the beginning and increases after the optimum parameters. The as-deposited IWO films with minimum resistivity of 6.4 10 4 cm were obtained at a growth temperature of225 C and sputteringpower of 40 W, with carrier mobility of 33.0 cm 2 V 1 s 1 and carrier concentration of 2.8 10 20 cm 3 and the average transmittance of about 81% in near-infrared region and about 87% in visible region.
基金Project supported by the National Natural Science Foundation of China(Nos.61764001,61665001,51665009,11965009,61874036,and 61805053)the Guangxi Science and Technology Base and Talent Special Project,China(Nos.AD18281084,AD18281030,AD18281034,and AD18281037)+3 种基金the Guangxi Key Laboratory of Precision Navigation Technology and Application,China(No.DH201808)the One Hundred Person Project of Guangxi as well as the Thousands of Key Teacher Training Project of Guangxi Education Department,Chinathe Innovation Project of Guilin University of Electronic Technology Graduate Education,China(No.2019YCXS021)the Natural Science Foundation of Shanghai,China(No.19ZR1420100)。
文摘Multicomponent oxide(Ga_(x)In_(1−x))_(2)O_(3)films are prepared on(0001)sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing.The optical properties and band structure evolution over the whole range of compositions in ternary compounds(Ga_(x)In_(1−x))_(2)O_(3)are investigated in detail.The X-ray diffraction spectra clearly indicate that(Ga_(x)In_(1−x))_(2)O_(3)films with Ga content varying from 0.11 to 0.55 have both cubic and monoclinic structures,and that for films with Ga content higher than 0.74,only the monoclinic structure appears.The transmittance of all films is greater than 86%in the visible range with sharp absorption edges and clear fringes.In addition,a blue shift of ultraviolet absorption edges from 380 to 250 nm is noted with increasing Ga content,indicating increasing band-gap energy from 3.61 to 4.64 eV.The experimental results lay a foundation for the application of transparent conductive compound(Ga_(x)In_(1−x))_(2)O_(3)thin films in photoelectric and photovoltaic industry,especially in display,light-emitting diode,and solar cell applications.
基金financially supported by the National Natural Science Foundation of China (No. 50902006)the National High Technology Development 863 Program of China (No. 2009AA03Z428)National Student Innovative Experiment Plan
文摘The In 2 O 3 : W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigated. Results showed that both the carrier concentration and carrier mobility were increased with the doping of W. The IWO film with the lowest resistivity of 1.0×10 3 cm, highest carrier mobilityof 43.7 cm 2 V 1 s 1 and carrier concentration of 1.4×10 20 cm 3 was obtained at the content of 2.8 wt.%. The average optical transmittance from 300 nm to 900 nm reached 87.6%.
文摘TiO 2 films have been deposited on glass substrates using DC reactive magnetron sputtering at different oxygen partial pressures from 0.10Pa to 0.65Pa.The transmittance (UV vis) and photoluminescence (PL) spectra of the films were recorded.The results of the UV vis spectra show that the deposition rate of the films decreased at oxygen partial pressure P(O 2)≥0.15Pa,the band gap increased from 3.48eV to 3.68eV for direct transition and from 3.27eV to 3.34eV for indirect transition with increasing the oxygen partial pressure.The PL spectra show convincingly that the transtion for films was indirect,and there were some oxygen defect energy levels at the band gap of the films.With increasing the O 2 partial pressure,the defect energy levels decreased.For the films sputtered at 0.35 and 0.65Pa there were two defect energy levels at 2.63eV and 2.41eV,corresponding to 0.72eV and 0.94eV below the conduction band for a band gap of 3.35eV,respectively.For the films sputtered at 0.10Pa and 0.15Pa,there was an energy band formed between 3.12eV and 2.06eV,corresponding to 0.23eV and 1.29eV below the conduction band.
