Influences of working pressure on properties for TiO_2 films deposited by DC pulse magnetron sputtering

TiO2 films were deposited at room temperature by DC pulse magnetron sputtering system.The crystalline structures,morphological features and photocatalytic activity of TiO2 films were systematically investigated by X-ray diffraction（XRD）,atomic force microscopy（AFM） and ultraviolet spectrophotometer,respectively.The results indicated that working pressure was the key deposition parameter in？uencing the TiO2 film phase composition at room temperature,which directly affected its photocatalytic activity.With increasing working pressure,the target self-bias decreases monotonously.Therefore,low temperature TiO2 phase（anatase） could be deposited with high working pressure.The anatase TiO2 films deposited with 1.4 Pa working pressure displayed the highest photocatalytic activity by the decomposition of Methyl Orange solution,which the degradation rate reached the maximum（35%） after irradiation by ultraviolet light for 1 h.

Doped-TiO_2 Photocatalysts and Synthesis Methods to Prepare TiO_2 Films

TiO2 is a promising photocatalyst. However, the low photocatalytic efficiency calls for the modification of TiO2. Metal- and nonmetal-doping of TiO2 have been proved to be effective ways to enhance photocatalytic properties. This review provides a deep insight into the understanding of the metal- and nonmetal-doped TiO2 photocatalysts. This article begins with the introduction of the crystal structures of TiO2 and applications of TiO2 materials. We then reviewed the doped-TiO2 system in two categories： （1） metal-doped TiO2 photocatalysts system, and （2） nonmetal-doped TiO2 photocatalysts system. Both experimental results and theoretical analyses are elaborated in this section. In the following part, for the advantages of TiO2 thin films over particles, various preparation methods to obtain TiO2 thin films are briefly discussed. Finally, this review ends with a concise conclusion and outlook of new trends in the development of TiO2-based photocatalysts.

Photoelectric properties of thin Eu^(3+)-doped TiO_2 films sensitized by cis-RuL_2(SCN)_2·2H_2O

Thin nanocrystalline TiO2 films doped by europium ions (Eu3+) were obtained by the sol-gel method. The photoelectric properties of Eu3+-doped TiO2 film electrode sensitized by cis-RuL2(SCN)2·2H2O (L=cis-2,2′-bipyridine-4,4′-dicarboxlic acid) ruthenium complex were studied. The thin films were characterized by X-ray diffraction, atomic force microscopy and X-ray photoelectron spectroscopy. Effect of doping Eu3+ on microscopic structure and photoelectrical properties were discussed. The result shows that doping europium ions makes specific surface area of these films larger, which contributes to improving the photoelectric properties. It is found that an optimal composition doped with 0.2 mol.% Eu3+ exhibits the highest photoelectric properties. Isc is 0.37 mA·cm-2, which is 0.17 mA·cm-2 bigger than that of un-doped films; Voc is 405 mV, which is 50 mV bigger than that of un-doped films.

Preparation and Characterization of Nano-ZnFe_2O_4/TiO_2 Films

The nano-ZnFe2O4/TiO2 films possess the functions of desulfurization and degradation for organic pollutants. The sols of ZnFe2O4/TiO2 were prepared by sol-gel method and coated on glass and porous ceramic by vertical coating and dipping-lift processes, respectively, and the samples were obtained after drying and sintering. The composition, appearance, absorption spectrum of the films, and the influence of the film on porous ceramic performances were analyzed using SEM, AFM, UVVis spectrometer, and mercury porosimeter, respectively, to determine the operation parameters of the multifunction porous ceramic elements for gas-purification.

Fabrication and Fluorescence Study of Sensitizing Dye/TiO_2 Films

Fluorescence spectra of the sensitizing dye/ TiO2 bilayer films were studied. Charge-transfer complexes were formed in the above bilayer.

UV-Vis and Photoluminescent Spectra of TiO_2 Films

TiO 2 films have been deposited on glass substrates using DC reactive magnetron sputtering at different oxygen partial pressures from 0.10Pa to 0.65Pa.The transmittance (UV vis) and photoluminescence (PL) spectra of the films were recorded.The results of the UV vis spectra show that the deposition rate of the films decreased at oxygen partial pressure P(O 2)≥0.15Pa,the band gap increased from 3.48eV to 3.68eV for direct transition and from 3.27eV to 3.34eV for indirect transition with increasing the oxygen partial pressure.The PL spectra show convincingly that the transtion for films was indirect,and there were some oxygen defect energy levels at the band gap of the films.With increasing the O 2 partial pressure,the defect energy levels decreased.For the films sputtered at 0.35 and 0.65Pa there were two defect energy levels at 2.63eV and 2.41eV,corresponding to 0.72eV and 0.94eV below the conduction band for a band gap of 3.35eV,respectively.For the films sputtered at 0.10Pa and 0.15Pa,there was an energy band formed between 3.12eV and 2.06eV,corresponding to 0.23eV and 1.29eV below the conduction band.

Atomic Force Microscopy Studies on the Chemical Treatment of Nanocrystalline Porous TiO_2 Films

AFM has been utilized to study the surface topography and the local conductivity of nanocrystalline TiO2 films. Improving the local conductivity by Ti(iso-C3H7O)4 treatment is characterized by quantitative analysis of the simultaneous current image. The mechanism of Ti(iso C3H7O)4 treatment is discussed.

Influence of Annealing Temperature on the Properties of TiO_2 Films Annealed by ex situ and in situ TEM

TiO2 thin films were deposited on quartz substrates by DC reactive magnetron sputtering of a pure Ti target in Ar/O2 plasma at room temperature. The TiO2 films were annealed at different temperatures ranging from 300 to 800 ℃ in a tube furnace under flowing oxygen gas for half an hour each. The effect of annealing temperatures on the structure, optical properties, and morphologies were presented and discussed by using X-ray diffraction, optical absorption spectrura, and atomic force microscope. The films show the presence of diffraction peaks from the （101）, （004）, （200） and （105） lattice planes of the anatase TiO2 lattice. The direct band gap of the annealed films decreases with the increase of annealing temperature. While, the roughness of the films increases with the increases of annealing temperature, and some significant roughness changes of the TiO2 film surfaces were observed after the annealing temperature reached 800 ℃. Moreover, the influences of annealing on the microstructures of the TiO2 film were investigated also by in situ observation in transmission electron microscope.

Effects of Substrate Temperature on Properties of Transparent Conductive Ta-Doped TiO_2 Films Deposited by Radio-Frequency Magnetron Sputtering

Ta-doped titanium dioxide films are deposited on fused quartz substrates using the rf magnetron sputtering technique at different substrate temperatures. After post-annealing at 550℃ in a vacuum, all the films are crystallized into the polycrystalline anatase TiO2 structure. The effects of substrate temperature from room temperature up to 350℃ on the structure, morphology, and photoelectric properties of Ta-doped titanium dioxide films are analyzed. The average transmittance in the visible region（400-800 nm） of all films is more than 73%.The resistivity decreases firstly and then increases moderately with the increasing substrate temperature. The polycrystalline film deposited at 150℃ exhibits a lowest resistivity of 7.7 × 10^-4Ω·cm with the highest carrier density of 1.1×10^21 cm^-3 and the Hall mobility of 7.4 cm^2·V^-1s^-1.

Preparation,Characterization and Photothermal Study of PVA/Ti_(2)O_(3) Composite Films

In this work,flexible photothermal PVA/Ti_(2)O_(3) composite films with different amount(0 wt%,5 wt%,10 wt%,15 wt%)of Ti_(2)O_(3) particles modified by steric acid were prepared by a simple solution casting method.The microstructures,XRD patterns,FTIR spectra,UV-Vis-NIR spectra thermo-conductivity,thermo-stability and photothermal effects of these composite films were all characterized.These results indicated that Ti_(2)O_(3) particles were well dispersed throughout the polyvinyl alcohol(PVA)matrix in the PVA/Ti_(2)O_(3) composite films.And Ti_(2)O_(3) particles could also effectively improve the photothermal properties of the composite films which exhibited high light absorption and generated a high temperature(about 57.4℃for film with 15 wt%Ti_(2)O_(3) amount)on the surface when it was irradiated by a simulated sunlight source(1 kW/m^(2)).

Numerical Analysis on the Effect of n-Si on Cu(In, Ga)Se2 Based Thin-Films for High-Performance Solar Cells by 1D-SCAPS

We report the performances of a chalcopyrite Cu(In, Ga)Se2 CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In2S3, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In2S3/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.

Rapid communication Preparation of TiO_2 nanometer thin films with high photocatalytic activity by reverse micellar method

Two kinds of TiO_2 nanometer thin films were prepared on stainless steel bythe reverse micellar and sol-gel methods, respectively. The calcined TiO_ 2 thin films werecharacterized by X-ray diffraction (XRD), atomic force microscopy (AFM), BET surface area and X-rayphotoelectron spectroscopy (XPS). Photocatalytic activity was evaluated by photocatalyticdecoloration of methyl orange aqueous solution. The results showed that the TiO_2 thin filmsprepared by reverse micellar method (designated as RM-TiO_2 films) showed higher photocatalyticactivity than those by sol-gel method (designated as SG-TiO_2 films). This is attributed to the factthat the former is composed of smaller monodispersed spherical particles with a size of about 15 nmand possesses higher surface areas.

Preparation and Properties of Ag-TiO_2 Thin Films on Glass Substrates

Ag TiO 2 thin films were prepared on glasses.The morphology and structure of Ag TiO 2 films were investigated by XRD, SEM and FT IR.The photocatalytic and hydrophilic properties of Ag TiO 2 thin films were also evaluated by examining photocatalytic degradation dichlorophos under sunlight illumination and the change of contact angle respectively.The research results show that the Ag TiO 2 thin film is mainly composed of 20-100nm Ag and TiO 2 particles.The Ag TiO 2 thin films possess a super hydrophilic ability and higher photocatalytic activity than that of pure TiO 2 thin film.

Preparation of Nanometer-structured TiO_2 Thin Films by Sol-Gel Method

The transparent anatase TiO 2 nanometer thin films were prepared by the sol-gel method on soda-lime glass.X-ray diffraction,thermal analysis and UV-visible spectrophotometer were used to analyze the formation of the phases.Only increasing the heat-treatment time,the average grain size has no obvious change.The mechanism of grain growth in TiO 2 thin film is probably as follows:the grain of coating will become grain core later;TiO 2 sol constantly deposited on the surface of TiO 2 grain and formed membrane with increasing of coating cycle times;TiO 2 grain in the film grow steadily.

Low-temperature Preparation of Photocatalytic TiO_2 Thin Films on Polymer Substrates by Direct Deposition from Anatase Sol

Anatase TiO2 sol was synthesized under mild conditions （75℃ and ambient pressure） by hydrolysis of titaniumn-butoxide in abundant acidic aqueous solution and subsequent reflux to enhance crystallization. At room temperature and in ambient atmosphere, crystalline TiO2 thin films were deposited on polymethylmethacrylate （PMMA）, SiO2-coated PMMA and SiO2-coated silicone rubber substrates from the as-prepared TiO2 sol by a dip-coating process. SiO2 layers prior to TiO2 thin films on polymer substrates could not only protect the substrates from the photocatalytic decomposition of the TiO2 thin films but also enhance the adhesion of the TiO2 thin films to the substrates. Field-emission type scanning electron microscope （FE-SEM） investigations revealed that the average particle sizes of the nanoparticles composing the TiO2 thin films were about 35-47 nm. The TiO2 thin films exhibited high photocatalytic activities in the degradation of reactive brilliant red dye X-3B in aqueous solution under aerated conditions. The preparation process of photocatalytic TiO2 thin films on the polymer substrates was quite simple and a low temperature route.

Preparation and Characterization of CeO_2-TiO_2/SnO_2:Sb Films Deposited on Glass Substrates by R.F.Sputtering

CeO2-TiO2 films and CeO2-TiO/SnO2：Sb （6 mol%） double films were deposited on glass substrates by radio-frequency magnetron sputtering （R.F. Sputtering）, using SnO2：Sb（6 mol%） target, and CeO2- TiO2 targets with different molar ratio of CeO2 to TiO2 （CeO2：TiO2-0：1.0; 0.1：0.9; 0.2：0.8; 0.3：0.7; 0.4：0.6; 0.5：0.5; 0.6：0.4; 0.7：0.3; 0.8：0.2; 0.9：0.1; 1.0：0）. The films are characterized by UV-visible transmission and infrared reflection spectra, scanning electron microscopy （SEM）, Raman spectroscopy, X-ray photoelectron spectroscopy （XPS） and X-ray diffraction （XRD）, respectively. The obtained results show that the amorphous phases composed of CeO2-TiO2 play an important role in absorbing UV, there are Ce^3-, Ce^4- and Ti^4- on the surface of the films; the glass substrates coated with CeO2-TiO2 （Ce/Ti=0.5：0.5; 0.6：0.4）/SnO2：Sb（6 mol%） double films show high absorbing UV（〉99）, high visible light transmission （75%） and good infrared reflection （〉70%）. The sheet resistance of the films is 30-50 Ω/□. The glass substrates coated with the double functional films can be used as window glass of buildings, automobile and so on.

STUDY ON PHOTOCATALYTIC MECHANISM OF SOL-GEL-DERIVED Pb-DOPED TiO_2 THIN FILMS

Pb-doped TiO2 photocatalytic thin films were prepared on a soda-lime glass substrate via sol-gel method using TiO2 sol solution containing lead and characterized by X-ray photoelectron spectroscopy (XPS). The results showed that besides oxides of Ti(IV) there is a certain amount of oxides of To(?) and Ti(?) and Pb exists in the forms of PbTiO3 and PbO. The photocatalytic activity of the Pb-doped TiO2 films was evaluated by the photocatalytic decolorization of aqueous methyl orange and photocatalytic mechanism mas also analyzed.

PREPARATION OF TiO_2 THIN FILMS BY MOCVD METHOD

Preparation of TiO2 thin films by MOCVD method is presented in this paper. A MOCVD system has been designed and built. A wide range of processing conditions are investigated to deposit TiO2 films on Si wafers starting from metal-organic precursor tetrabutyl titanate. Activation energy of the film formation （E） is obtained to be 23.6 kJ/mol. Structure of films is pure anatase when deposit temperatures are low, rutile forms at 700℃. The films also exhibit preferred crystallographic orientations which strongly depend on deposit conditions. Refractive index increases with increasing of film thickness and decreasing of deposit temperature.