Preparation,Characterization and Photothermal Study of PVA/Ti_(2)O_(3) Composite Films

In this work,flexible photothermal PVA/Ti_(2)O_(3) composite films with different amount(0 wt%,5 wt%,10 wt%,15 wt%)of Ti_(2)O_(3) particles modified by steric acid were prepared by a simple solution casting method.The microstructures,XRD patterns,FTIR spectra,UV-Vis-NIR spectra thermo-conductivity,thermo-stability and photothermal effects of these composite films were all characterized.These results indicated that Ti_(2)O_(3) particles were well dispersed throughout the polyvinyl alcohol(PVA)matrix in the PVA/Ti_(2)O_(3) composite films.And Ti_(2)O_(3) particles could also effectively improve the photothermal properties of the composite films which exhibited high light absorption and generated a high temperature(about 57.4℃for film with 15 wt%Ti_(2)O_(3) amount)on the surface when it was irradiated by a simulated sunlight source(1 kW/m^(2)).

Numerical Analysis on the Effect of n-Si on Cu(In, Ga)Se2 Based Thin-Films for High-Performance Solar Cells by 1D-SCAPS

We report the performances of a chalcopyrite Cu(In, Ga)Se2 CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In2S3, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In2S3/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.

Uniform deposition of ultra-thin TiO_(2) film on mica substrate by atmospheric pressure chemical vapor deposition: Effect of precursor concentration

The performance of pearlescent pigment significantly affected by the grain size and the roughness of deposited film. The effect of TiCl_(4) concentration on the initial deposition of TiO_(2) on mica by atmospheric pressure chemical vapor deposition(APCVD) was investigated. The precursor concentration significantly affected the deposition and morphology of TiO_(2) grains assembling the film. The deposition time for fully covering the surface of mica decreased from 120 to 10 s as the TiCl_(4) concentration increased from 0.38%to 2.44%. The grain size increased with the TiCl_(4) concentration. The AFM and TEM analysis demonstrated that the aggregation of TiO_(2) clusters at the initial stage finally result to the agglomeration of fine TiO_(2) grains at high TiCl_(4) concentrations. Following the results, it was suggested that the nucleation density and size was easy to be adjusted when the TiCl_(4) concentration is below 0.90%.

Centimeter-sized Cs_(3)Cu_(2)I_(5)single crystals grown by oleic acid assisted inverse temperature crystallization strategy and their films for high-quality X-ray imaging

Low-dimensional halide perovskites have become the most promising candidates for X-ray imaging,yet the issues of the poor chemical stability of hybrid halide perovskite,the high poisonousness of lead halides and the relatively low detectivity of the lead-free halide perovskites which seriously restrain its commercialization.Here,we developed a solution inverse temperature crystal growth(ITCG)method to bring-up high quality Cs_(3)Cu_(2)I_(5)crystals with large size of centimeter order,in which the oleic acid(OA)is introduced as an antioxidative ligand to inhibit the oxidation of cuprous ions effieiently,as well as to decelerate the crystallization rate remarkalby.Based on these fine crystals,the vapor deposition technique is empolyed to prepare high quality Cs_(3)Cu_(2)I_(5)films for efficient X-ray imaging.Smooth surface morphology,high light yields and short decay time endow the Cs_(3)Cu_(2)I_(5)films with strong radioluminescence,high resolution(12 lp/mm),low detection limits(53 nGyair/s)and desirable stability.Subsequently,the Cs_(3)Cu_(2)I_(5)films have been applied to the practical radiography which exhibit superior X-ray imaging performance.Our work provides a paradigm to fabricate nonpoisonous and chemically stable inorganic halide perovskite for X-ray imaging.

Effects of irradiation on superconducting properties of small-grained MgB_(2) thin films

We investigate the effect of ion irradiation on MgB_(2) thin films with small grains of approximately 122 nm and 140 nm.The flux pinning by grain boundaries is insignificant in the pristine MgB_(2) films due to good inter-grain connectivity,but is significantly improved after 120-keV Mn-ion irradiation.The scaling behavior of the flux pinning force density for the ion-irradiated MgB_(2) thin films with nanoscale grains demonstrates the predominance of pinning by grain boundaries,in contrast to the single-crystalline MgB_(2) films where normal point pinning was dominant after low-energy ion irradiation.These results suggest that irradiation-induced defects can accumulate near the grain boundaries in metallic MgB_(2) superconductors.

Optical and electrical properties of BaSnO_(3) and In_2O_(3) mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature

For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.

XPS Study of Electroless Deposited Sb2Se3 Thin Films for Solar Cell Absorber Material

As a thin film solar cell absorber material, antimony selenide (Sb2Se3) has become a potential candidate recently because of its unique optical and electrical properties and easy fabrication method. X-ray photoelectron spectroscopy (XPS) was used to determine the stoichiometry and composition of electroless Sb2Se3 thin films using depth profile studies. The surface layers were analyzed nearly stoichiometric. But the abundant amount of antimony makes the inner layer electrically more conductive.

Transparent Thermally Tunable Microwave Absorber Prototype Based on Patterned VO2 Film

Transparent microwave absorbers that exhibit high optical transmittance and microwave absorption capability are ideal,although having a fixed absorption performance limits their applicability.Here,a simple,transparent,and thermally tunable microwave absorber is proposed,based on a patterned vanadium dioxide(VO_(2))film.Numerical calculations and experiments demonstrate that the proposed VO_(2)absorber has a high optical transmittance of 84.9%at 620 nm;its reflection loss at 15.06 GHz can be thermally tuned from–4.257 to–60.179 dB,and near-unity absorption is achieved at 523.750 K.Adjusting only the patterned VO_(2)film duty cycle can change the temperature of near-unity absorption.Our VO_(2)absorber has a simple composition,a high optical transmittance,a thermally tunable microwave absorption performance,a large modulation depth,and an adjustable temperature tuning range,making it promising for application in tunable sensors,thermal emitters,modulators,thermal imaging,bolometers,and photovoltaic devices.

Thickness effect on solar-blind photoelectric properties of ultrathinβ-Ga_(2)O_(3)films prepared by atomic layer deposition

Theβ-Ga_(2)O_(3)films with different thicknesses are prepared by an atomic layer deposition system.The influence of film thickness on the crystal quality is obvious,indicating that the thicker films perform better crystal quality,which is verified from x-ray diffraction(XRD)and scanning electron microscope(SEM)results.The Ga_(2)O_(3)-based solar blind photodetectors with different thicknesses are fabricated and studied.The experimental results show that the responsivity of the photodetectors increases exponentially with the increase of the film thickness.The photodetectors with inter-fingered structure based on 900 growth cyclesβ-Ga_(2)O_(3)active layers(corresponding film thickness of 58 nm)exhibit the best performances including a low dark current of 134 fA,photo-to-dark current ratio of 1.5×10^(7),photoresponsivity of 1.56 A/W,detectivity of 2.77×10^(14)Jones,and external quantum efficiency of 764.49%at a bias voltage of 10 V under 254-nm DUV illumination.The photoresponse rejection ratio(R_(254)/R_(365))is up to 1.86×10^(5).In addition,we find that the photoelectric characteristics also depend on the finger spacing of the MSM structure.As the finger spacing decreases from 50μm to10μW,the photoresponsivity,detectivity,and external quantum efficiency increase significantly.

The effects of radio frequency atmospheric pressure plasma and thermal treatment on the hydrogenation of TiO_(2) thin film

The effects of radio frequency(RF)atmospheric pressure(AP)He/H_(2)plasma and thermal treatment on the hydrogenation of TiO_(2)thin films were investigated and compared in this work.The color of the original TiO_(2)film changes from white to black after being hydrogenated in He/H_(2)plasma at160 W(gas temperature~381℃)within 5 min,while the color of the thermally treated TiO_(2)film did not change significantly even in pure H_(2)or He/H_(2)atmosphere with higher temperature(470℃)and longer time(30 min).This indicated that a more effective hydrogenation reaction happened through RF AP He/H_(2)plasma treatment than through pure H_(2)or He/H_(2)thermal treatment.The color change of TiO_(2)film was measured based on the Commission Internationale d’Eclairage L*a*b*color space system.Hydrogenated TiO_(2)film displayed improved visible light absorption with increased plasma power.The morphology of the cauliflower-like nanoparticles of the TiO_(2)film surface remained unchanged after plasma processing.X-ray photoelectron spectroscopy results showed that the contents of Ti3+species and Ti-OH bonds in the plasma-hydrogenated black TiO_(2)increased compared with those in the thermally treated TiO_(2).X-ray diffraction(XRD)patterns and Raman spectra indicated that plasma would destroy the crystal structure of the TiO_(2)surface layer,while thermal annealing would increase the overall crystallinity.The different trends of XRD and Raman spectra results suggested that plasma modification on the TiO_(2)surface layer is more drastic than on its inner layer,which was also consistent with transmission electron microscopy results.Optical emission spectra results suggest that numerous active species were generated during RF AP He/H_(2)plasma processing,while there were no peaks detected from thermal processing.A possible mechanism for the TiO_(2)hydrogenation process by plasma has been proposed.Numerous active species were generated in the bulk plasma region,accelerated in the sheath region,and bumped toward the TiO_(2)film,which will react with the TiO_(2)surface to form OVs and disordered layers.This leads to the tailoring of the band gap of black TiO_(2)and causes its light absorption to extend into the visible region.

Multilevel optoelectronic hybrid memory based on N-doped Ge_(2)Sb_(2)Te_(5)film with low resistance drift and ultrafast speed

Multilevel phase-change memory is an attractive technology to increase storage capacity and density owing to its high-speed,scalable and non-volatile characteristics.However,the contradiction between thermal stability and operation speed is one of key factors to restrain the development of phase-change memory.Here,N-doped Ge_(2)Sb_(2)Te_(5)-based optoelectronic hybrid memory is proposed to simultaneously implement high thermal stability and ultrafast operation speed.The picosecond laser is adopted to write/erase information based on reversible phase transition characteristics whereas the resistance is detected to perform information readout.Results show that when N content is 27.4 at.%,N-doped Ge_(2)Sb_(2)Te_(5)film possesses high ten-year data retention temperature of 175℃and low resistance drift coefficient of 0.00024 at 85℃,0.00170 at 120℃,and 0.00249 at 150℃,respectively,owing to the formation of Ge–N,Sb–N,and Te–N bonds.The SET/RESET operation speeds of the film reach 520 ps/13 ps.In parallel,the reversible switching cycle of the corresponding device is realized with the resistance ratio of three orders of magnitude.Four-level reversible resistance states induced by various crystallization degrees are also obtained together with low resistance drift coefficients.Therefore,the N-doped Ge_(2)Sb_(2)Te_(5)thin film is a promising phase-change material for ultrafast multilevel optoelectronic hybrid storage.

Depth Profile Study of Electroless Deposited Sb2S3 Thin Films Using XPS for Photovoltaic Applications

Sb2S3 has gained tremendous research recently for thin film solar cell absorber material because of their easy synthesis, unique electrical and optical properties. The stoichiometry and composition of electroless Sb2S3 thin films were analyzed using XPS depth profile studies. The surface layers were found nearly stoichiometric. On the other hand, the inner layer was rich in antimony composition making it more conductive electrically.

Investigation of Sprayed Lu2O3 Thin Films Using XPS

Spray pyrolysis method was used to deposit Lutetium Oxide (Lu2O3) thin films using lutetium (III) chloride as source material and water as oxidizer. Annealing was carried out in argon atmosphere at 450°C for 60 minutes of the films. To investigate the composition and stoichiometry of sprayed as-deposited and annealed Lu2O3 thin films, depth profile studies using X-ray photoelectron spectroscopy (XPS) was done. Nearly stoichiometric was observed for both annealed and as-deposited films in inner and surface layers.

XPS Depth Profile Study of Sprayed Ga2O3 Thin Films

Ga2O3 thin films were fabricated by spray pyrolysis method using gallium acetylacetonate as source material and water as oxidizer. The films were annealed at 450°C for 60 minutes in argon atmosphere. X-ray photoelectron spectroscopy (XPS) depth profile studies were carried out to analyze the stoichiometry and composition of sprayed as-deposited and annealed Ga2O3 thin films. Surface layers and the inner layers of as-deposited and annealed films were found nearly stoichiometric.

溶胶-凝胶SiO_(2)减反膜的制备与光学性能研究

碱催化溶胶-凝胶多孔SiO_(2)减反膜具有优异的光学性能及抗激光损伤性能,是高功率激光装置中的重要组成部分,但其与光学元件之间的结合强度低,使得膜层易发生接触破坏。本研究以“神光II”高功率激光装置溶胶-凝胶多孔SiO_(2)减反膜为基础,通过提拉法在其表层涂覆致密的SiO_(2)薄层后得到机械强度提升的双层SiO_(2)减反膜(SiO_(2)-MTES),并与常用的单层氨固化SiO_(2)减反膜(SiO_(2)-HMDS)进行相关应用性能的综合比较。结果表明,涂覆SiO_(2)-MTES的熔石英在约800 nm处的峰值透过率大于99.6%,运用1-on-1激光损伤阈值测试方法测得该双层SiO_(2)减反膜的零几率激光损伤阈值为51.9 J/cm^(2)(1064 nm,9.1 ns),与涂覆SiO_(2)-HMDS的性能相当。同时,SiO_(2)-MTES膜层与水的接触角达到117.3°,且在相对湿度大于90%的高湿环境中膜层的透过率较稳定。多次擦拭实验结果表明SiO_(2)-MTES的耐摩擦机械强度明显优于SiO_(2)-HMDS,有效提升了膜层与光学元件之间的结合强度。

溶胶-凝胶法制备SiO_(2)减反射薄膜及其耐久性

目的增加太阳光在太阳能电池玻璃盖板的透过率,以期提高太阳能电池的转换效率。方法以正硅酸乙酯为原料、乙醇为溶剂、氨水为催化剂,采用碱催化溶胶-凝胶浸渍提拉法,在玻璃表面制备了SiO_(2)减反射薄膜,研究了溶胶中正硅酸乙酯与乙醇物质的量比和提拉镀膜速度对SiO_(2)薄膜光学性质的影响,分析了减反射薄膜的耐久性。结果碱性溶胶制备的SiO_(2)为非晶相,采用浸渍提拉法在玻璃表面制备的薄膜结构疏松,且存在微裂纹。采用正硅酸乙酯与乙醇物质的量比为1∶20、提拉速度为500μm/s及正硅酸乙酯与乙醇物质的量比为1∶30、提拉速度为1000μm/s制备的SiO_(2)薄膜,折射率分别为1.35和1.33,厚度分别为101.11、102.63nm,最大透过率分别高于未镀膜玻璃6.57%和6.94%,在400~1100nm波长范围内的平均透过率分别高于未镀膜玻璃5.01%和5.34%,表明该薄膜具有优异的减反射性能。玻璃表面制备SiO_(2)薄膜后,水接触角约为5°,具有超亲水性。将未镀膜玻璃及镀膜样品在实验室放置5个月后,采用正硅酸乙酯与乙醇物质的量比为1∶20、提拉速度为500μm/s及正硅酸乙酯与乙醇物质的量比为1∶30、提拉速度为1000μm/s的制备SiO_(2)薄膜的最大透过率分别高于未镀膜玻璃7.50%和6.71%,在400~1100 nm波长范围内的平均透过率分别高于未镀膜玻璃5.94%和5.59%,表明SiO_(2)薄膜的减反射性能具有较好的耐久性。结论采用碱催化溶胶-凝胶法在玻璃上制备的SiO_(2)减反射薄膜具有超亲水性及优异的减反射耐久性,在太阳能电池玻璃盖板上具有潜在的应用价值。

不同摩擦副条件下二硫化钼薄膜的摩擦学性能研究

为了研究MoS_(2)-Ti薄膜与9Cr18钢、W-DLC和DLC薄膜的摩擦学行为,分别采用磁控溅射技术和等离子体增强化学气相沉积技术在9Cr18钢表面沉积了MoS_(2)-Ti薄膜、W-DLC和DLC薄膜。用扫描电子显微镜(SEM)、能量色散谱仪(EDS)和X射线衍射仪(XRD)研究了薄膜的表面形貌、化学成分和相组成。利用纳米压痕仪和球-盘摩擦试验机对不同薄膜的纳米硬度和摩擦学性能进行了分析。研究结果表明,MoS_(2)-Ti薄膜与DLC薄膜的摩擦因数和磨损率最小。相比MoS_(2)-Ti薄膜与不镀膜的9Cr18钢球摩擦副,MoS_(2)-Ti薄膜与W-DLC薄膜摩擦副的摩擦因数和磨损率没有减小。MoS_(2)-Ti薄膜与W-DLC薄膜摩擦副的磨损机制为磨粒磨损和黏着磨损,与DLC薄膜摩擦副的磨损机制为黏着磨损。摩擦副表面沉积DLC薄膜有助于降低MoS_(2)-Ti薄膜的摩擦因数和磨损率。

退火温度对Ta_(2)O_(5)薄膜光学和表面特性的影响

针对退火温度影响Ta_(2)O_(5)薄膜的光学和表面特性的问题,采用电子束蒸发技术在石英基底上制备了该薄膜,并将薄膜样品分别在200℃、400℃和600℃下进行退火。利用光谱仪测试了薄膜的透射率并反演计算得到薄膜的折射率和消光系数的变化规律,采用X射线衍射仪和原子力显微镜表征了薄膜的表面性能。研究表明,薄膜透射率曲线的峰值随退火温度升高而显著提升。随着退火温度升高,薄膜的折射率和消光系数均逐渐变大,表面粗糙度呈现下降的趋势,表面变得致密。退火前后薄膜均为非晶态。该研究为进一步提高Ta_(2)O_(5)薄膜的性能提供了试验数据。

5Cr油套管钢在含Cl^(-)的CO_(2)环境中的腐蚀特性研究

目的掌握油气井生产中CO_(2)腐蚀对油套管的影响规律,研究兼顾耐蚀性和经济性的5Cr油套管材料在含Cl^(-)的CO_(2)环境中不同时间下的腐蚀演变规律。方法采用XRD、XPS、SEM和EDS等技术分析5Cr油套管钢在不同时间下腐蚀产物膜的演变情况,利用丝束电极(WBE)和阻抗测试(EIS)技术对其腐蚀电化学行为进行研究。结果5Cr油套管钢腐蚀后期的平均腐蚀速率约为初期的1/2,在腐蚀14 d后,腐蚀产物膜中的Cr富集大于30%,Cr、Fe质量比达到较高水平,约为基体的15倍。随着腐蚀的进行,电荷传递电阻和产物膜覆盖引起的电阻增大,电化学反应阻力增大。在腐蚀前期具有局部不均匀性,随着腐蚀的进行,电极腐蚀电位有负移现象,最终分布区间为−0.59~−0.61 V,电极表面阳极电流区域大幅减少。结论在腐蚀时间延长的条件下,5Cr油套管钢腐蚀产物膜的致密性增加,电荷传递电阻呈变大趋势。在产物膜下的5Cr油套管钢区域,电流发生由阴极向阳极极性转变的现象,产物膜存在的孔隙使5Cr油套管钢基体金属被腐蚀,从而导致阳极电流的出现。表面局部腐蚀电位阳极区的形成和扩展使其有产生点蚀的倾向,但腐蚀产物逐渐沉积在点蚀坑内壁,形成了Cr富集的保护性表面层,原发生点蚀区域由原阳极活性点位转变为阴极区,对其发展起到了抑制作用。

基于共溅射ZnO/SnO_(2)异质结薄膜的气体传感器研究

采用射频磁控共溅射法在叉指电极上制备了ZnO/SnO_(2)n-n异质结复合薄膜,系统测试了其气敏特性,并分析了其气敏机理。结果表明,与ZnO薄膜和SnO_(2)薄膜气体传感器相比,ZnO/SnO_(2)异质结薄膜气体传感器具有更低的工作温度、更高的灵敏度以及更快的响应和恢复速度。ZnO/SnO_(2)异质结薄膜气体传感器对乙醇具有较好的选择性,最低检测体积分数为1×10^(-6),最佳工作温度为250℃;对1×10^(-4)乙醇气体的灵敏度可达18.4,响应时间和恢复时间分别为10 s和19 s。