Time-resolved photoluminescence of anatase/rutile TiO_2 phase junction revealing charge separation dynamics

Junctions are an important structure that allows charge separation in solar cells and photocatalysts. Here, we studied the charge transfer at an anatase/rutile TiO2 phase junction using time-resolved photoluminescence spectroscopy. Visible （-S00 nm） and near-infrared （NIR, -830 nm） emissions were monitored to give insight into the photoinduced charges of anatase and rutile in the junction, respectively, New fast photoluminescence decay components appeared in the visible emission of futile-phase dominated TiO2 and in the NIR emission of many mixed phase TiO2samples. The fast decays confirmed that the charge separation occurred at the phase junction. The visible emission intensity from the mixed phase TiO2 increased, revealing that charge transfer from rutile to anatase was the main pathway. The charge separation slowed the microsecond time scale photolumines- cence decay rate for charge carriers in both anatase and rutile. However, the millisecond decay of the charge carriers in anatase TiO2 was accelerated, while there was almost no change in the charge carrier dynamics of rutile TiO2. Thus, charge separation at the anatase/rutile phase junction caused an increase in the charge carrier concentration on a microsecond time scale, because of slower electron-hole recombination. The enhanced photocatalytic activity previously observed at ana- tase/rutile phase junctions is likely caused by the improved charge carrier dynamics we report here. These findings may contribute to the development of improved photocatalytic materials.

Enhancing redshift phenomenon in time-resolved photoluminescence spectra of AlGaN epilayer

AlGaN epitaxial layer has been studied by means of temperature-dependent time-integrated photoluminescence（PL）and time-resolved photoluminescence（TRPL）. An enhancing redshift phenomenon in TRPL spectra with increasing temperature was observed, and the localized excitons behaved like quasi two-dimensional excitons between 6 K and 90 K. We demonstrated that these behaviors are caused by a change in the carrier dynamics with increasing temperature due to the competition of carriers＇ localization and delocalization in the AlGaN alloy.

Time-Resolved Photoluminescence Study of Silicon Nanoporous Pillar Array

A silicon nanoporous pillar array （Si-NPA） is thought to be a promising functional substrate for constructing a variety of Si-based optoelectronic nanodevices, due to its unique hierarchical structure and enhanced physical properties. This makes the in-depth understanding of the photoluminescence （PL） of Si-NPA crucial for both scientific research and practical applications. In this work, the PL properties of Si-NPA are studied by measuring both the steady-state and time-resolved PL spectrum. Based on the experimental data, the three PL bands of Si-NPA, i.e., the ultraviolet band, the purple-blue plateau and the red band are assigned to the oxygen-excess defects in Si oxide or silanol groups at the surface of Si nanocrystallites （nc-Si）, oxygen deficiency defects in Si oxide, and band-to-band transition of nc-Si under the frame of quantum confinement combining with the surface states like Si=O and Si-O^i bonds at the surface of nc-Si, respectively. These results may provide some novel insight into the PL process of Si-NPA and may be helpful for clarifying the PL mechanism.

Time-Resolved Photoluminescence Spectra of Porous Si

he photoluminescence spectra of porous Si have been studied. Its timere-solved luminescence spectra show a red shift of luminescencc peak with increasingdelay time after exciting and a nonexponential decay. Several spectral bands withdifferent Gaussian center appear by means of the decomposition of a spetrum. Theresuits of our experiments show quantum confined characters in porous Si, and wespeculate that the short wavelength band at 465 nm is the direct band froni P_(15) toP_(25)

Linear and nonlinear characteristics of time-resolved photoluminescence modulation by terahertz pulse

The linear and nonlinear characteristics of time-resolved photoluminescence （PL） of n-type bulk semiconductor GaAs modulated with terahertz （THz） pulse are studied by using an ensemble Monte Carlo （EMC） method. In this paper the center energy valley （Г valley） electron concentration changes with the pulse delay time, sampling time and the outfield are mainly discussed. The results show that the sampling time and the THz field should exceed certain thresholds to effectively excite photoluminescence quenching （PLQ）. Adopting a direct current （DC） field makes the sampling time threshold shortened and the linear range of THz field-modulation PL expanded. Moreover, controlling the sampling time and the outfield intensity can improve the linear quality： with forward time, the larger outfield is used; with backward time, the smaller outfield is used. This study can provide a theoretical basis of THz field linear modulation in a larger range for new light emitting devices.

Diffusion effect on the decay of time-resolved photoluminescence under low illumination in lead halide perovskites

Time-resolved photoluminescence(TRPL)has been extensively used to measure the carrier lifetime in lead halide perovskites.The TRPL curves of perovskite materials are usually fitted with a multi-exponential function,instead of a single exponential one.This was considered to be a result of the surface and the bulk recombination or the additional radiative recombination caused by the high excited carrier density.Here,a new model considering the diffusion and the trap-assisted recombination of carriers is proposed to explain the TRPL curves.The expressions of the TRPL curves and the transient absorption(TA)dynamic curves are theoretically derived,demonstrating that the TRPL curve is an infinite exponential series,regardless of the presence of surface recombination or not.Our newly developed highly sensitive nanosecond TA and TRPL were employed to measure the carrier dynamics of the same sample under low illumination in the linear response region of TA,thereby experimentally verifying our model.These results suggest that the decay of the TRPL is not only a consequence of the carrier recombination but also the carrier diffusion.TRPL cannot provide a direct measurement of the carrier lifetime,whereas TA spectroscopy can.Furthermore,the surface and the bulk recombination can be resolved and the average diffusion coefficient(D)can also be correctly obtained by combining TRPL and TA measurements.We also propose an approximate method for calculating the carrier lifetime and diffusion coefficient of high-quality perovskite films.Our model provides not only a new interpretation of the dynamics of the PL decay but also a deep insight into the carrier dynamics in the nanosecond time scale under working condition of perovskites solar cells.

Mn^(2+)-activated calcium fluoride nanoprobes for time-resolved photoluminescence biosensing

Time-resolved (TR)photoluminescence (PL) technique has shown great promise in ultrasensitive biodetection and high-resolution bioimaging.Hitherto,almost all the TRPL bioprobes are based on the parity-forbidden f→f transition of lanthanide ions.Herein,we report TRPL biosensing by taking advantage of the d→d transition of transition metal (TM)Mn^2+ ion.We demonstrate that the Forster resonance energy transfer (FRET)signal can be distinguished from that of radiative reabsorption process through measuring the PL lifetime of Mn^2+,thus establishing a reliable method for Mn^2+ in homogeneous TR-FRET biodetection.We also demonstrate the biotin receptor-targeted cancer cell imaging by utilizing biotinylated CaF2:Ce,Mn nanoprobes.Furthermore,we show in a proof-of-concept experiment the appli- cation of the long-lived PL of Mn^2+ for TRPL bioimaging through the burst shot with a cell phone.These findings provide a general approach for exploiting the long-lived PL of TM ions for TRPL biosensing,thereby opening up a new avenue for the exploration of novel and versatile applications of TM ions.

Ultrafast carrier dynamics in GeSn thin film based on time-resolved terahertz spectroscopy

We measure the time-resolved terahertz spectroscopy of GeSn thin film and studied the ultrafast dynamics of its photo-generated carriers.The experimental results show that there are photo-generated carriers in GeSn under femtosecond laser excitation at 2500 nm,and its pump-induced photoconductivity can be explained by the Drude–Smith model.The carrier recombination process is mainly dominated by defect-assisted Auger processes and defect capture.The firstand second-order recombination rates are obtained by the rate equation fitting,which are(2.6±1.1)×10^(-2)ps^(-1)and(6.6±1.8)×10^(-19)cm^(3)·ps^(-1),respectively.Meanwhile,we also obtain the diffusion length of photo-generated carriers in GeSn,which is about 0.4μm,and it changes with the pump delay time.These results are important for the GeSn-based infrared optoelectronic devices,and demonstrate that Ge Sn materials can be applied to high-speed optoelectronic detectors and other applications.

Assembly of functional carboxymethyl cellulose/polyethylene oxide/anatase TiO_(2) nanocomposites and tuning the dielectric relaxation, optical, and photoluminescence performances

Nanocomposite films consisting of carboxymethyl cellulose,polyethylene oxide(CMC/PEO),and anatase titanium diox-ide(TO)were produced by the use of sol-gel and solution casting techniques.TiO2 nanocrystals were effectively incorporated into CMC/PEO polymers,as shown by X-ray diffraction(XRD)and attenuated total reflectance fourier transform infrared(ATR-FTIR)analysis.The roughness growth is at high levels of TO nanocrystals(TO NCs),which means increasing active sites and defects in CMC/PEO.In differential scanning calorimetry(DSC)thermograms,the change in glass transition temperature(Tg)val-ues verifies that the polymer blend interacts with TO NCs.The increment proportions of TO NCs have a notable impact on the dielectric performances of the nanocomposites,as observed.The electrical properties of the CMC/PEO/TO nanocomposite undergo significant changes.The nanocomposite films exhibit a red alteration in the absorption edge as the concentration of TO NCs increases in the polymer blend.The decline in the energy gap is readily apparent as the weight percentage of TO NCs increases.The photoluminescence(PL)emission spectra indicate that the sites of the luminescence peak maximums show slight variation;peaks get wider,while their intensities decrease dramatically as the concentration of TO increases.These nanocomposite materials show potential for multifunctional applications including optoelectronics,antireflection coatings,pho-tocatalysis,light emitting diodes,and solid polymer electrolytes.

Time-resolved characteristics of a nanosecond pulsed multi-hollow needle plate packed bed dielectric barrier discharge

In this paper,self-designed multi-hollow needle electrodes are used as a high-voltage electrode in a packed bed dielectric barrier discharge reactor to facilitate fast gas flow through the active discharge area and achieve large-volume stable discharge.The dynamic characteristics of the plasma,the generated active species,and the energy transfer mechanisms in both positive discharge(PD)and negative discharge(ND)are investigated by using fast-exposure intensified charge coupled device(ICCD)images and time-resolved optical emission spectra.The experimental results show that the discharge intensity,number of discharge channels,and discharge volume are obviously enhanced when the multi-needle electrode is replaced by a multihollow needle electrode.During a single voltage pulse period,PD mainly develops in a streamer mode,which results in a stronger discharge current,luminous intensity,and E/N compared with the diffuse mode observed in ND.In PD,as the gap between dielectric beads changes from 0 to250μm,the discharge between the dielectric bead gap changes from a partial discharge to a standing filamentary micro-discharge,which allows the plasma to leave the local area and is conducive to the propagation of surface streamers.In ND,the discharge only appears as a diffusionlike mode between the gap of dielectric beads,regardless of whether there is a discharge gap.Moreover,the generation of excited states N_(2)^(+)(B^(2)∑_(u)^(+))and N2(C^(3)Π_(u))is mainly observed in PD,which is attributed to the higher E/N in PD than that in ND.However,the generation of the OH(A^(2)∑^(+))radical in ND is higher than in PD.It is not directly dominated by E/N,but mainly by the resonant energy transfer process between metastable N_(2)(A^(3)∑_(u)^(+))and OH(X^(2)Π).Furthermore,both PD and ND demonstrate obvious energy relaxation processes of electron-to-vibration and vibration-to-vibration,and no vibration-to-rotation energy relaxation process is observed.

Ostensibly perpetual optical data storage in glass with ultra-high stability and tailored photoluminescence

Long-term optical data storage(ODS)technology is essential to break the bottleneck of high energy consumption for information storage in the current era of big data.Here,ODS with an ultralong lifetime of 2×10^(7)years is attained with single ultrafast laser pulse induced reduction of Eu^(3+)ions and tailoring of optical properties inside the Eu-doped aluminosilicate glasses.We demonstrate that the induced local modifications in the glass can stand against the temperature of up to 970 K and strong ultraviolet light irradiation with the power density of 100 kW/cm^(2).Furthermore,the active ions of Eu^(2+)exhibit strong and broadband emission with the full width at half maximum reaching 190 nm,and the photoluminescence(PL)is flexibly tunable in the whole visible region by regulating the alkaline earth metal ions in the glasses.The developed technology and materials will be of great significance in photonic applications such as long-term ODS.

Time-resolved photoluminescence:a precision tool for shallow trap density determination in perovskite films

Determining the trap density in the absorbing layer thin film of perovskite solar cells is a critically important task,as it directly influences the efficiency of the devices.Here,we proposed time-resolved photoluminescence(TRPL)as a nondestructive method to assess trap density.A model was constructed to investigate carrier recombination and transition in perovskite materials.The model was utilized for numerical calculations and successfully fitted TRPL signals of perovskite materials.Furthermore,a genetic algorithm was employed to optimize the parameters.Finally,statistical methods were applied to obtain the parameters associated with the trap states of the material.This approach facilitates the successful determination of trap densities for different samples with clear differentiation.

Photoluminescence Enhancement of Aluminum Ion Intercalated MoS_(2)Quantum Dots

Low photolumines-cence(PL)quantum yield of molybdenum disulfide(MoS_(2))quan-tum dots(QDs)has lim-ited practical applica-tion as potential fluores-cent materials.Here,we report the intercalation of aluminum ion(Al^(3+))to enhance the PL of MoS_(2)QDs and the un-derlying mechanism.With detailed characterization and exciton dynamics study,we suggest that additional surface states including new emission centers have been effectively introduced to MoS_(2)QDs by the Al^(3+)intercalation.The synergy of new radiative pathway for exciton re-combination and the passivation of non-radiative surface traps is responsible for the en-hanced fluorescence of MoS_(2)QDs.Our findings demonstrate an efficient strategy to improve the optical properties of MoS_(2)QDs and are important for understanding the regulation effect of surface states on the emission of two dimensional sulfide QDs.

Temperature-dependent photoluminescence of lead-free cesium tin halide perovskite microplates

Tin halide perovskites recently have attracted extensive research attention due to their similar electronic and band structures but non-toxicity compared with their lead analogues. In this work, we prepare high-quality CsSnX_(3)(X=Br,I) microplates with lateral sizes of around 1–4 μm by chemical vapor deposition and investigate their low-temperature photoluminescence(PL) properties. A remarkable splitting of PL peaks of the CsSnBr_(3)microplate is observed at low temperatures. Besides the possible structural phase transition at below 70 K, the multi-peak fittings using Gauss functions and the power-dependent saturation phenomenon suggest that the PL could also be influenced by the conversion from the emission of bound excitons into free excitons. With the increase of temperature, the peak position shows a blueshift tendency for CsSnI_(3), which is governed by thermal expansion. However, the peak position of the CsSnBr3microplate exhibits a transition from redshift to blueshift at ~160 K. The full width at half maximum of CsSnX_(3)broadens with increasing temperature, and the fitting results imply that longitudinal optical phonons dominate the electron–phonon coupling and the coupling strength is much more robust in CsSnBr3than in CsSnI_(3). The PL intensity of CsSnX_(3)microplates is suppressed due to the enhanced non-radiative relaxation and exciton dissociation competing with radiative recombination. According to the Arrhenius law, the exciton binding energy of CsSnBr_(3)is ~38.4 meV, slightly smaller than that of CsSnI_(3).

Time-resolved K-shell x-ray spectra of nanosecond laser-produced titanium tracer in gold plasmas

A study of a nanosecond laser irradiation on the titanium-layer-buried gold planar target is presented. The timeresolved x-ray emission spectra of titanium tracer are measured by a streaked crystal spectrometer. By comparing the simulated spectra obtained by using the FLYCHK code with the measured titanium spectra, the temporal plasma states, i.e.,the electron temperatures and densities, are deduced. To evaluate the feasibility of using the method for the characterization of Au plasma states, the deduced plasma states from the measured titanium spectra are compared with the Multi-1D hydrodynamic simulations of laser-produced Au plasmas. By comparing the measured and simulated results, an overall agreement for the electron temperatures is found, whereas there are deviations in the electron densities. The experiment–theory discrepancy may suggest that the plasma state could not be well reproduced by the Multi-1D hydrodynamic simulation, in which the radial gradient is not taken into account. Further investigations on the spectral characterization and hydrodynamic simulations of the plasma states are needed. All the measured and FLYCHK simulated spectra are given in this paper as datasets. The datasets are openly available at http://www.doi.org/10.57760/sciencedb.j00113.00032.

Anomalous photoluminescence enhancement and resonance charge transfer in type-II 2D lateral heterostructures

Type-Ⅱband alignment can realize the efficient charge transfer and separation at the semiconductor heterointerface,which results in photoluminescence(PL)quenching.Recently,several researches demonstrated great enhancement of localized PL at the interface of type-Ⅱtwo-dimensional(2D)heterostructure.However,the dominant physical mechanism of this enhanced PL emission has not been well understood.In this work,we symmetrically study the exciton dynamics of type-Ⅱlateral heterostructures of monolayer MoS_(2) and WS_(2) at room temperatures.The strong PL enhancement along the one-dimensional(1D)heterointerface is associated with the trion emission of the WS_(2) shell,while a dramatic PL quenching of neutral exciton is observed on the MoS_(2) core.The enhanced quantum yield of WS2trion emission can be explained by charge-transfer-enhanced photoexcited carrier dynamics,which is facilitated by resonance hole transfer from MoS_(2) side to WS_(2) side.This work sheds light on the 1D exciton photophysics in lateral heterostructures,which has the potential to lead to new concepts and applications of optoelectronic device.

Thermally enhanced photoluminescence and temperature sensing properties of Sc2W3O12:Eu3+ phosphors

Recently, lanthanide-ion-doped luminescent materials have been extensively used as optical thermometry probes due to their fast responses, non-contact, and high sensitivity properties. Based on different responses of two emissions to temperature, the fluorescence intensity ratio(FIR) technique can be used to estimate the sensitivities for assessing the optical thermometry performances. In this study, we introduce different doping concentrations of Eu^(3+) ions into negative thermal expansion material Sc2W3O12to increase the thermal-enhanced luminescence from 373 K to 548 K, and investigate the temperature sensing properties in detail. All samples can exhibit their good luminescence behaviors thermally enhanced.The emission intensity of Sc2W3O12:6-mol% Eu3+phosphor reaches 147.8% of initial intensity at 473 K. As the Eu3+doping concentration increases, the resistance of the sample to thermal quenching decreases. The FIR technique based on each of the transitions 5D→7F_(1)(592 nm) and 5D→7F_(2)(613 nm) of Eu3+ions demonstrates a maximum relative temperature sensitivity of 3.063% K-1at 298 K for Sc_(2)W_(3)O_(12):6-mol% Eu3+phosphor. The sensitivity of sample decreases with the increase of Eu3+concentration. Benefiting from the thermal-enhanced luminescence performance and good temperature sensing properties, the Sc_(2)W_(3)O_(12):Eu^(3+)phosphors can be used as optical thermometers.

Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

Amorphous silicon carbide films are deposited by the plasma enhanced chemical vapour deposition technique,and optical emissions from the near-infrared to the visible are obtained.The optical band gap of the films increases from 1.91 eV to 2.92 eV by increasing the carbon content,and the photoluminescence（PL） peak shifts from 1.51 eV to 2.16 eV.The band tail state PL mechanism is confirmed by analysing the optical band gap,PL intensity,the Stocks shift of the PL,and the Urbach energy of the film.The PL decay times of the samples are in the nanosecond scale,and the dependence of the PL lifetime on the emission energy also supports that the optical emission is related to the radiative recombination in the band tail state.

Low-Temperature Growth and Photoluminescence of SnO_2 Nanowires

SnO2 nanowires with a diameter of 25nm are synthesized at 550~C by Au-Ag catalyst assisted thermal evapora- tion of SnO powders. The room-temperature photoluminescence spectra （PL） of the prepared nanowires are measured. Among the four PL peaks,the peak of 418nm is newly observed. This peak is caused by the plane defects of the twinned crystal nanowires. The formation of SnO2 nanowires at low temperature is pursued on the basis of the VLS mechanism and application of the reaction source of SnO. We suggest that the chemical reactions of the low temperature and low concen- tration of the vaporized species are responsible for the thinner size of the SnO2 nanowires.

Origin of Photoluminescence of Neodymium-Implanted Silicon

Neodymium is incorporated into single crystalline silicon on MEVVA (Metal Vapor Vacuum Arc) ion source.At room temperature,strong ultra violet and visible fluorescence are observed at the excitation wavelength of 220nm.Luminescence intensity increases with the increase of ion fluence.XPS results manifest that Si-O,Nd-O,Si-Si and O-O bonds exist in the implanted layers.Luminescence mainly results from the radiation transition in the intra 4f shell of Nd 3+ ion.The defects' and damages' contribution to the luminescence is also presented.