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氧化锡表面的原子簇模型计算 被引量:1
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作者 吴雄 苏克和 《物理化学学报》 SCIE CAS CSCD 北大核心 1996年第4期357-360,共4页
Cluster models 0of SnO2(110) face and oxygen vacancies and oxygen adsorption on its surface have been calculated by EHMO method. The results show that a tin atom.with a coordination number of four is the adsorption ce... Cluster models 0of SnO2(110) face and oxygen vacancies and oxygen adsorption on its surface have been calculated by EHMO method. The results show that a tin atom.with a coordination number of four is the adsorption center, because the total energy of cluster model becomes lower when an oxygen atom adsorpts on the tin atom with a coordination number of four. The tin atom with this coordination number gains and loses electrons more easily than tin atoms with a coordination number of five. All tin atoms in the cluster of SnO2(110) face are Sn4+. 展开更多
关键词 氧化锡 表面结构 ehmo 原子簇
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氧在SnO_2(110)面吸附机理的研究
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作者 吴雄 苏克和 程永清 《传感技术学报》 CAS CSCD 1996年第2期6-9,共4页
用EHMO方法计算了SnO_2(110)面原子簇模型,并计算了表面存在氧空位和氧原子吸附的情况.计算结果表明,表面四配位锡原子是吸附中心,因电子得失而引起的原子净电荷变化是完全定域的.四配位锡原子的净电荷变化很明显,而五配位锡原子吸附的... 用EHMO方法计算了SnO_2(110)面原子簇模型,并计算了表面存在氧空位和氧原子吸附的情况.计算结果表明,表面四配位锡原子是吸附中心,因电子得失而引起的原子净电荷变化是完全定域的.四配位锡原子的净电荷变化很明显,而五配位锡原子吸附的净电荷变化很小. 展开更多
关键词 二氧化锡 SnO2(110)面 氧吸附机理 气敏半导体材
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ITO surface modification for inverted organic photovoltaics
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作者 Mingzhang DENG Weina SHI Chen ZHAO Bingbing CHEN Yan SHEN 《Frontiers of Optoelectronics》 CSCD 2015年第3期269-273,共5页
The work function (WF) of indium-tin-oxide (ITO) substrates plays an important role on the inverted organic photovoltaic device performance. And electrode engineering has been a useful method to facilitate carrier... The work function (WF) of indium-tin-oxide (ITO) substrates plays an important role on the inverted organic photovoltaic device performance. And electrode engineering has been a useful method to facilitate carrier extraction or charge collection to enhance organic photovoltaic (OPV) performance. By using self-assembly technique, we have deposited poly(dimethyl diallylammonium chloride) (PDDA) layers onto ITO coated glass substrates. The results indicate that the surface WF of ITO is reduced by about 0.3 eV after PDDA modification, which is attributed to the modulation in electron affinity. In addition, the surface roughness of ITO substrate became smaller after PDDA modification. These modified ITO substrates can be applied to fabricate inverted OPVs, in which ITO works as the cathode to collect electrons. As a result, the photovoltaic performance of inverted OPV is substantially improved, mainly reflecting on the increase of short circuit current density. 展开更多
关键词 organic photovoltaic (OPV) indium tin oxide(ITO) inverted structure surface modification workfunction (WF)
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