The diffusion coefficient of the minority charge carriers in the base of a silicon solar cell under temperature and subjected to a magnetic field, passes in reso-nance at temperature (T<sub>opt</sub>). For...The diffusion coefficient of the minority charge carriers in the base of a silicon solar cell under temperature and subjected to a magnetic field, passes in reso-nance at temperature (T<sub>opt</sub>). For this same magnetic field, the diffusion coeffi-cient of the photogenerated carriers by a monochromatic light in frequency modulation enters into resonance, at the frequency (ω<sub>c</sub>). Under this double resonance in temperature and frequency, the diffusion coefficient is used in the expression of the recombination velocity of the minority charge carriers on the back side of the base of the solar cell (n<sup>+</sup>/p/p<sup>+</sup>), to obtain, by a graphical method, the optimum thickness. A modeling of the results obtained shows a material saving (Si), in the development of the solar cell.展开更多
New expressions of back surface recombination of excess minority carriers in the base of silicon solar are expressed dependent on both, the thickness and the diffusion coefficient which is in relationship with the dop...New expressions of back surface recombination of excess minority carriers in the base of silicon solar are expressed dependent on both, the thickness and the diffusion coefficient which is in relationship with the doping rate. The optimum thickness thus obtained from the base of the solar cell allows the saving of the amount of material needed in its manufacture without reducing its efficiency.展开更多
The minority carrier’s recombination velocity at the junction and at the back surface is used for the modeling and determination of the optimum thickness of the base of a silicon solar cell in the static regime, unde...The minority carrier’s recombination velocity at the junction and at the back surface is used for the modeling and determination of the optimum thickness of the base of a silicon solar cell in the static regime, under magnetic field and temperature influence. This study takes into account the Umklapp process and the Lorentz effect on the minority carriers photogenerated in the base.展开更多
文摘The diffusion coefficient of the minority charge carriers in the base of a silicon solar cell under temperature and subjected to a magnetic field, passes in reso-nance at temperature (T<sub>opt</sub>). For this same magnetic field, the diffusion coeffi-cient of the photogenerated carriers by a monochromatic light in frequency modulation enters into resonance, at the frequency (ω<sub>c</sub>). Under this double resonance in temperature and frequency, the diffusion coefficient is used in the expression of the recombination velocity of the minority charge carriers on the back side of the base of the solar cell (n<sup>+</sup>/p/p<sup>+</sup>), to obtain, by a graphical method, the optimum thickness. A modeling of the results obtained shows a material saving (Si), in the development of the solar cell.
文摘New expressions of back surface recombination of excess minority carriers in the base of silicon solar are expressed dependent on both, the thickness and the diffusion coefficient which is in relationship with the doping rate. The optimum thickness thus obtained from the base of the solar cell allows the saving of the amount of material needed in its manufacture without reducing its efficiency.
文摘The minority carrier’s recombination velocity at the junction and at the back surface is used for the modeling and determination of the optimum thickness of the base of a silicon solar cell in the static regime, under magnetic field and temperature influence. This study takes into account the Umklapp process and the Lorentz effect on the minority carriers photogenerated in the base.
