The total conductivity,oxygen sorption property,oxygen permeability and stability of pure perovskite-type oxide BaCo0.7Fe0.2Nb0.1O3-δ (BCFNO) in real operating conditions were investigated. Its total conductivity was...The total conductivity,oxygen sorption property,oxygen permeability and stability of pure perovskite-type oxide BaCo0.7Fe0.2Nb0.1O3-δ (BCFNO) in real operating conditions were investigated. Its total conductivity was measured to be 3.6 S·cm-1 at 600°C. Though the total conductivity of the BCFNO membrane is much smaller than that of the Ba0.5Sr0.5Co0.8Fe0.2O3-δ (BSCFO) membrane,the oxygen permeability of the BCFNO membrane is similar to that of the BSCFO membrane. SEM observation and EDX analysis of the BCFN...展开更多
目的探讨术后延长吸氧时间对老年全膝关节置换术(TKA)病人术后疼痛、炎症因子及免疫功能的影响。方法选取2022年1月至2023年1月西安交通大学第二附属医院收治的拟行TKA治疗的病人142例,男65例,女77例;年龄(73.35±7.30)岁。采用随...目的探讨术后延长吸氧时间对老年全膝关节置换术(TKA)病人术后疼痛、炎症因子及免疫功能的影响。方法选取2022年1月至2023年1月西安交通大学第二附属医院收治的拟行TKA治疗的病人142例,男65例,女77例;年龄(73.35±7.30)岁。采用随机数字表法将病人分为观察组和对照组,每组71例。对照组病人术后给予8 h的常规鼻导管低流量(3 L/min)吸氧,观察组在对照组的基础上延长吸氧时间至术后48 h。观察两组术前和术后8、24、48 h简易精神状态检查量表(MMSE)评分和疼痛视觉模拟量表(VAS)评分,术前和术后8、48 h血清炎症因子和免疫功能指标水平;术前和术后24、48 h脉搏血氧饱和度(SpO_(2))、心率和呼吸频率情况。结果观察组术后24、48 h MMSE评分显著高于对照组(P<0.05),VAS评分显著低于对照组(P<0.05)。两组术后24、48 h VAS评分较术前均显著降低(P<0.05)。对照组术后各时点MMSE评分较术前均显著降低(P<0.05),观察组术后8、24 h MMSE评分显著降低(P<0.05)。观察组术后24、48 h SpO_(2)显著高于对照组(P<0.05),心率、呼吸频率显著低于对照组(P<0.05)。观察组术后48 h白介素-10(IL-10)、CD3^(+)、CD4^(+)、CD8^(+)、CD4^(+)/CD8^(+)水平显著高于对照组(P<0.05),白介素-6(IL-6)、肿瘤坏死因子-α(TNF-α)水平显著低于对照组(P<0.05)。与术前比较,两组术后8、48 h血清IL-6、TNF-α水平均显著升高(P<0.05),CD3^(+)、CD4^(+)、CD8^(+)、CD4^(+)/CD8^(+)水平均显著降低(P<0.05)。结论术后延长吸氧时间可降低老年TKA病人疼痛,提高病人术后免疫功能,改善炎症因子水平。展开更多
The La0.7Sr0.3CryMnzCo(1-y-z)O3-δ samples were prepared by solid state reaction.The phases,microstructure and properties of the samples were investigated by XRD,SEM,DC four-probe method and iodometry method.The singl...The La0.7Sr0.3CryMnzCo(1-y-z)O3-δ samples were prepared by solid state reaction.The phases,microstructure and properties of the samples were investigated by XRD,SEM,DC four-probe method and iodometry method.The single orthorhombic phase La0.7Sr0.3CryMnzCo(1-y-z)O3-δ perovskite oxides were obtained when sintered at l350 °C for 10 h.The oxygen nonstoichiometry of the materials varied inversely with the total electronic conductivity.The sample with composition of La0.7Sr0.3Cr0.5Mn0.35 Co0.15O3-δ had the maxima...展开更多
The hardening of the buried oxide （BOX） layer of separation by implanted oxygen （SIMOX） silicon-on-insulator （SOI） wafers against total-dose irradiation was investigated by implanting ions into the BOX layers. T...The hardening of the buried oxide （BOX） layer of separation by implanted oxygen （SIMOX） silicon-on-insulator （SOI） wafers against total-dose irradiation was investigated by implanting ions into the BOX layers. The tolerance to total-dose irradiation of the BOX layers was characterized by the comparison of the transfer characteristics of SOI NMOS transistors before and after irradiation to a total dose of 2.7 Mrad（SiO2）. The experimental results show that the implantation of silicon ions into the BOX layer can improve the tolerance of the BOX layers to total-dose irradiation. The investigation of the mechanism of the improvement suggests that the deep electron traps introduced by silicon implantation play an important role in the remarkable improvement in radiation hardness of SIMOX SOI wafers.展开更多
基金the National High-Tech Research and Development Program of China (No. 2006AA11A189)the Science and Technology Commission of Shanghai Municipality (No. 07DZ12036)+1 种基金the National Engineering Research Center of Advanced Steel Technology (NERCAST, No. 050209)the Education Commission of Shanghai Municipality.
文摘The total conductivity,oxygen sorption property,oxygen permeability and stability of pure perovskite-type oxide BaCo0.7Fe0.2Nb0.1O3-δ (BCFNO) in real operating conditions were investigated. Its total conductivity was measured to be 3.6 S·cm-1 at 600°C. Though the total conductivity of the BCFNO membrane is much smaller than that of the Ba0.5Sr0.5Co0.8Fe0.2O3-δ (BSCFO) membrane,the oxygen permeability of the BCFNO membrane is similar to that of the BSCFO membrane. SEM observation and EDX analysis of the BCFN...
文摘目的探讨术后延长吸氧时间对老年全膝关节置换术(TKA)病人术后疼痛、炎症因子及免疫功能的影响。方法选取2022年1月至2023年1月西安交通大学第二附属医院收治的拟行TKA治疗的病人142例,男65例,女77例;年龄(73.35±7.30)岁。采用随机数字表法将病人分为观察组和对照组,每组71例。对照组病人术后给予8 h的常规鼻导管低流量(3 L/min)吸氧,观察组在对照组的基础上延长吸氧时间至术后48 h。观察两组术前和术后8、24、48 h简易精神状态检查量表(MMSE)评分和疼痛视觉模拟量表(VAS)评分,术前和术后8、48 h血清炎症因子和免疫功能指标水平;术前和术后24、48 h脉搏血氧饱和度(SpO_(2))、心率和呼吸频率情况。结果观察组术后24、48 h MMSE评分显著高于对照组(P<0.05),VAS评分显著低于对照组(P<0.05)。两组术后24、48 h VAS评分较术前均显著降低(P<0.05)。对照组术后各时点MMSE评分较术前均显著降低(P<0.05),观察组术后8、24 h MMSE评分显著降低(P<0.05)。观察组术后24、48 h SpO_(2)显著高于对照组(P<0.05),心率、呼吸频率显著低于对照组(P<0.05)。观察组术后48 h白介素-10(IL-10)、CD3^(+)、CD4^(+)、CD8^(+)、CD4^(+)/CD8^(+)水平显著高于对照组(P<0.05),白介素-6(IL-6)、肿瘤坏死因子-α(TNF-α)水平显著低于对照组(P<0.05)。与术前比较,两组术后8、48 h血清IL-6、TNF-α水平均显著升高(P<0.05),CD3^(+)、CD4^(+)、CD8^(+)、CD4^(+)/CD8^(+)水平均显著降低(P<0.05)。结论术后延长吸氧时间可降低老年TKA病人疼痛,提高病人术后免疫功能,改善炎症因子水平。
基金supported by the National Natural Science Foundation of China (50204007)Program for New Century Excellent Talents in University (NCET-07-0387)
文摘The La0.7Sr0.3CryMnzCo(1-y-z)O3-δ samples were prepared by solid state reaction.The phases,microstructure and properties of the samples were investigated by XRD,SEM,DC four-probe method and iodometry method.The single orthorhombic phase La0.7Sr0.3CryMnzCo(1-y-z)O3-δ perovskite oxides were obtained when sintered at l350 °C for 10 h.The oxygen nonstoichiometry of the materials varied inversely with the total electronic conductivity.The sample with composition of La0.7Sr0.3Cr0.5Mn0.35 Co0.15O3-δ had the maxima...
基金Project supported by the National Fund for Distinguished Young Scholars （Grant No 59925205）, the Basic Research Program of Shanghai （Grant No 02DJ14069）, and the National Natural Science Foundation of China （Grant No 10305018）.
文摘The hardening of the buried oxide （BOX） layer of separation by implanted oxygen （SIMOX） silicon-on-insulator （SOI） wafers against total-dose irradiation was investigated by implanting ions into the BOX layers. The tolerance to total-dose irradiation of the BOX layers was characterized by the comparison of the transfer characteristics of SOI NMOS transistors before and after irradiation to a total dose of 2.7 Mrad（SiO2）. The experimental results show that the implantation of silicon ions into the BOX layer can improve the tolerance of the BOX layers to total-dose irradiation. The investigation of the mechanism of the improvement suggests that the deep electron traps introduced by silicon implantation play an important role in the remarkable improvement in radiation hardness of SIMOX SOI wafers.
