CMOS Realization of VDVTA and OTA Based Fully Electronically Tunable First Order All Pass Filter with Optimum Linearity at Low Supply Voltage ±0.85 V

This paper presents a new first order all pass filter configurations. The proposed all pass filter configuration employs two configurations namely VDVTA and OTAs based first order all pass filter configuration. The first proposed configuration employs a single VDVTA and one grounded capacitor whereas the second proposed configuration employs two OTAs and one grounded capacitor. Both types of proposed configurations are fully electronically tunable and their quality factors do not depend on tunable pole frequency range. The reported configurations yield low active and passive sensitivities and also have low power consumption with very low supply voltage ± 0.85 V with Bias Voltage ± 0.50 V. The PSPICE simulation of the proposed VDVTA and two OTAs based first order all pass filter configurations are verified using 0.18 μm CMOS Technology Process Parameters.

Synthesis for Current-Mode Sallen-Key Filter Using VDTAs

In this work, an original Sallen-Key second-order low-pass filter is first turned into a current-mode one by means of the adjoint network theorem. Two nodal admittance matrices(NAM) of the filter are then educed. Furthermore, these two matrices are expanded through NAM expansion approach, generating one current-mode Sallen-Key filter, which uses two compact voltage differential trans-conductance amplifiers(VDTAs) and two grounded capacitors, implements not only one low-pass transfer function but two band-pass transfer functions, and provides the non-interrelated control between the natural frequency and quality factor. As an example of the synthesized filter, a second-order VDTA filter with fo=1 MHz, Q=1, HLP=-HBP1=HBP2=1 is designed. The used synthesis approach has been confirmed with the help of circuit and computer analysis.

Analysis and performance exploration of high performance(HfO_2) SOI FinFETs over the conventional(Si_3N_4) SOI FinFET towards analog/RF design

Nowadays FinFET devices have replaced the MOS devices almost in all complex integrated circuits of electronic gadgets like computer peripherals, tablets, and smartphones in portable electronics. The scaling of FinFET is ongoing and the analog/RF performance is most affected by increased SCEs(short channel effects) in sub22 nm technology nodes. This paper explores the analog/RF performance study and analysis of high performance device-D2(conventional Hf02 spacer SOI FinFET) and device-D3(source/drain extended Hf02 spacer SOI FinFET) over the device-D1(conventional Si3 N4 spacer SOI FinFET) at 20 nm technology node through the 3-D(dimensional) simulation process. The major performance parameters like I(ON current), I(OFF current), gm(transconductance), gd(output conductance), A(intrinsic gain), SS(sub-threshold slope), TGF = g/I(trans-conductance generation factor), VEA(early voltage), GTFP(gain trans-conductance frequency product), TFP(tansconductance frequency product), GFP(gain frequency product), and f(cut-off frequency) are studied for evaluating the analog/RF performance of different flavored SOI FinFET structures. For analog performance evaluation,device-D3 and D2 give better results in terms of gm, ID(drain current) and SS parameters, and for RF performance evaluation device-D1 is better in terms of f, GTFP, TFP, and GFP parameters both at low and high values of V=0.05 V and V=0.7 V respectively.