Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer

We investigate the negative transconductance effect in p-GaN gate AlGaN/GaN high-electron-mobility transistor(HEMT) associated with traps in the unintentionally doped GaN buffer layer. We find that a negative transconductance effect occurs with increasing the trap concentration and capture cross section when calculating transfer characteristics.The electron tunneling through AlGaN barrier and the reduced electric field discrepancy between drain side and gate side induced by traps are reasonably explained by analyzing the band diagrams, output characteristics, and the electric field strength of the channel of the devices under different trap concentrations and capture cross sections.

PARASITIC TOLERANT DIFFERENTIAL SC TRANSCONDUCTANCE USING UNITY GAIN BUFFERS

The unity gain buffer will be good to design high frequency SCF if its resistiveeffects can be eliminated,and therefore the whole parasitic sensitivities will greatly be reduced.On the basis of this concept,a novel parasitic tolerant SC DTE(differential transconductanceelement)is proposed.SC floating inductor and integrator fit for high frequency applications areformed by the DTE.The computer simulation and experiment on a third order elliptic LP filterverify its validity.

New Voltage Mode Sinusoidal Oscillator Using Voltage Differencing Transconductance Amplifiers (VDTAs)

The purpose of this paper is to introduce a new electronically controlled voltage mode sinusoidal oscillator (VMSO) using Voltage Differencing Transconductance Amplifiers (VDTA). The proposed circuit provides electronic control of ω0 and independent condition of oscillation (CO). It is found that the oscillator works very satisfactorily and pure sinusoidal waveforms are available at the outputs. The PSPICE simulation confirms the theoretical results. The proposed oscillator circuit employs only two VDTAs, along with two grounded capacitor and single grounded resistor. The circuit exhibits low active and passive sensitivities for ω0. Simulation results are obtained by using PSPICE software with TSMC CMOS 0.18 um process parameters.

Realization of a New Current Mode Second-Order Biquad Using Two Current Follower Transconductance Amplifiers (CFTAs)

A new circuit for realization of universal current-mode filter using current Follower Transconductance Amplifiers (CFTAs) is presented. The proposed circuit realizes current-mode low pass, high pass and band pass filter functions simultaneously with a single current source at the input. The band reject and all pass filters can also be obtained from the proposed circuit without any extra hardware. The proposed circuit employs three passive grounded elements and two CFTAs. Linear electronic control of natural frequency ω0 is available in the proposed circuit. The quality factor can be independently adjusted through grounded resistor. The proposed circuit employs two grounded capacitors and a grounded resistor along with two CFTAs. The grounded resistor can be replaced by an OTA based circuit for linear electronic control of quality factor Q0. The circuit exhibits low active and passive sensitivities for ω0 and Q0. Simulation results are obtained using PSPICE software which is in conformity with the theoretical findings.

Current Mode Universal Filter Using Single Current Controlled Differential Difference Current Conveyor Transconductance Amplifier

This research paper contains a new electronically tunable current-mode biquadratic universal filter using a new active building block;current controlled differential difference current conveyor transconductance amplifier (CCDDCCTA). The proposed filter provides the following important and desirable features: (i) One can use only one CCDDCCTA and two capacitors;(ii) One can get low pass (LP), band pass (BP), high pass (HP), notch (NF) and all pass (AP) current responses from the same configuration without any alteration;(iii) Passive components are grounded, which ease the integrated circuit implementation;(iv) Responses are electronically tunable;and (v) Sensitivity is low. Moreover, the non-ideality analysis shows that the parasitic passive components can be compensated for the proposed circuit. The functionality of the design is verified through SPICE simulations using 0.25 μm CMOS TSMC technology process parameters. Simulation result agrees well with the theoretical analysis.

A review on GaN HEMTs:nonlinear mechanisms and improvement methods

The GaN HEMT is a potential candidate for RF applications due to the high frequency and large power handling capability.To ensure the quality of the communication signal,linearity is a key parameter during the system design.However,the GaN HEMT usually suffers from the nonlinearity problems induced by the nonlinear parasitic capacitance,transconductance,channel transconductance etc.Among them,the transconductance reduction is the main contributor for the nonlinearity and is mostly attributed to the scattering effect,the increasing resistance of access region,the self-heating effect and the trapping effects.Based on the mechanisms,device-level improvement methods of transconductance including the trapping suppression,the nanowire channel,the graded channel,the double channel,the transconductance compensation and the new material structures have been proposed recently.The features of each method are reviewed and compared to provide an overview perspective on the linearity of the GaN HEMT at the device level.

Systematic Synthesis of Compressive VDTA-Based T-T Filter with Orthogonal Control of f_o and Q

Based on sixteen nullor-mirror models of the voltage differencing transconductance amplifier (VDTA) and port admittance matrices of the tow-Thomas (T-T) filter with orthogonal control between the characteristic frequency(f_0) and figure of merit (Q),two different categories of the voltage-mode and transconductance-mode T-T filters are synthesized by the means of the nodal admittance matrix (NAM) expansion method.The category A filter that employs two compressive VDTAs and two grounded capacitors includes four structures,and the category B filter that uses two compressive VDTAs,two grounded capacitors,and one grounded resistor,also includes four structures.These circuits are suitable for integrated circuit manufacture,and their parameters f_0 and Q can be orthogonally adjusted with varying the bias currents of VDTAs.After the paper and pencil test is completed,the computer analyses,including alternating current (AC),parameter sweep,Monte Carlo (MC),and noise analyses,are performed to support the synthesis approach.

Universal Current-Mode Biquad Filter Using a VDTA

This paper presents a new current-mode single input multi output (SIMO) type biquad employing one voltage differencing transconductance amplifier (VDTA), two grounded capacitors and a single grounded resistor. The configuration realizes all basic filter functions (i.e. Low Pass (LP), High Pass (HP), Band Pass (BP), Notch (BR) and All Pass (AP)). The natural frequency (ω0) and bandwidth (BW) are independently tunable. The workability of proposed configuration has been verified using SPICE simulation with TSMC CMOS 0.18 μm process parameters.

THE DESIGN OF ACTIVE CURRENT-MODE FILTER WITH STATE VARIABLE METHOD

Basing on the state variable method, a block diagram of the current-mode biquad active circuit was proposed, whose integrators were realized using three kinds of active elements such as operational amplifier, second generation current conveyors and operational transconduc-tance amplifiers-electric capacity. The characteristics of each circuit were analyzed.

New Current Mode Lossy Integrator Employing CDDITA

This work presents a novel current-mode (CM) lossless integrator that uses one current differencing differential input transconductance amplifier (CDDITA) and one grounded capacitor. The configuration based on single active element has several advantages from the aspect of monolithic integration, few are: reduced power consumption, chip miniaturization. Employment of grounded capacitor is also beneficial for monolithic integration. Specifying some of the key features of integrator proposed are: 1) purely resistorless, 2) electronically tunable, 3) current output available at the port having high impedance, and 4) excellent performance under non-ideal conditions. So, a resister-less current mode lossy integrator with electronic control employing single CDDITA has been proposed in this paper. The verification of workability of the proposed current mode integrator is well explained by the help of SPICE simulations using TSMC CMOS 0.18 μm technology node.

Electronically-Controlled Current-mode second order Sinusoidal Oscillators Using MO-OTAs and Grounded Capacitors

Five new electronically-controllable second order current-mode sinusoidal oscillators using three mul-ti-output operational transconductance amplifiers (MO-OTAs) and two grounded capacitors (GC) have been presented. Simulation results are included to confirm the theoretical analysis based upon CMOS OTAs implementable in 0.5 μm technology.

CMOS Realization of VDTA Based Electronically Tunable Wave Active Filter with Minimum Power Consumption at Low Supply Voltage ±0.82 V

This paper presents a higher order voltage and current mode low pass or high pass filter for wave active filter based on Voltage Differencing Transconductance Amplifiers (VDTAs). The wave equivalent variable technique and topological simulation as well as operational realization using wave variables techniques are proposed for basic active building blocks of wave active filters. The proposed wave equivalent technique is employed for wave active filter with the proper selection of the terminal connections. This work presented the basic element for the realizing wave active filter is the series inductor with parallel grounded capacitor. The proposed wave active filter is verified by realizing a 4th order low pass and high pass Butterworth filter with minimum power consumption at ±0.82 V using SPICE simulation with 0.18 μm TSMC CMOS technology parameters.

Single VDVTA-Based Voltage-Mode Biquad Filter

In this paper, an application of voltage differencing voltage transconductance amplifier (VDVTA) in the realization of voltage-mode (VM) multi-input single output (MISO) type biquad is presented. The proposed topology uses one VDVTA as an active element, two capacitors and a grounded resistor. The configuration realizes low pass (LP), high pass (HP), band pass (BP) and notch (BR) filters without the requirement of any matching condition. The natural frequency (w0) and bandwidth (BW) are independently controllable. The proposed circuit offers low active and passive sensitivities of w0. The operation of the proposed circuit has been verified through SPICE simulation with TSMC CMOS 0.18 μm process parameters.

VDTA-Based Wave Active Filter

In this paper we present a wave active filter based on Voltage Differencing Transconductance Amplifiers (VDTAs). The synthesis of active filters basically based on processing of wave quantities. The wave method is presented for basic building blocks of active filters i.e. a series inductor and parallel capacitor through which realization of various active circuits is made by appropriate connections. The proposed wave active filter is verified by realizing a 4th order low pass Butterworth filter using SPICE simulation with 0.18 μm TSMC CMOS technology parameters.

High-Performance CMOS Current Mirrors: Application to Linear Voltage-to-Current Converter Used for Two-Stage Operational Amplifier

This paper presents two schemes of high performance CMOS current mirror, one of them is used for operational tran-sconductance amplifier (OTA) in analog VLSI systems. The linearity, output impedance, bandwidth and accuracy are the most parameters to determine the performance of the current mirror. Here a comparison of two architectures based on same architecture of the amplifier is presented. This comparison includes: linearity, output impedance, bandwidth and accuracy. These two circuits are validated with simulation in technology AMS 0.35 μm. An operational amplifier based on the adapted current mirror is proposed. Its frequency analysis with large bandwidth is validated with the same technology.

Switched Capacitor Biquad Filter Using CDTA

A switched capacitor biquad filter using current differencing transconductance amplifier (CDTA) is presented in this paper. The proposed circuit employs only one CDTA, two virtually grounded capacitors and one switched capacitor. It is a resistorless circuit, so it is beneficial to IC implementation in terms of space consideration. The proposed circuit is a second order single input multiple output (SIMO) current-mode filter. This filter can simultaneously realize all basic filter functions high pass, low pass and band pass responses without any component-matching conditions. All the active and passive sensitivities are low. The natural angular frequency (ω0) and quality factor (Q) of proposed filter can be electronically controlled. Owing to current mode operation it consumes less power. PSPICE simulation results are used to verify the theoretical analysis.

An Ultra Low-Voltage and Low-Power OTA Using Bulk-Input Technique and Its Application in Active-RC Filters

This paper presents the design of a two-stage bulk-input pseudo-differential operational transconductance amplifier (OTA) and its application in active-RC filters. The OTA was designed in 90 nm CMOS process and operates at a single supply voltage of 0.5 V. Using a two-path bulk-driven OTA by the combination of two different amplifiers the DC gain and speed of the OTA is increased. Rail-to-rail input is made possible using the transistor’s bulk terminal as in input. Also a Miller-Feed-forward (MFF) compensation is utilized which is improved the gain bandwidth (GBW) and phase margin of the OTA. In addition, a new merged cross-coupled self-cascode pair is used that can provide higher gain. Also, a novel cost-effective bulk-input common-mode feedback (CMFB) circuit has been designed. Simplicity and ability of using this new merged CMFB circuit is superior compared with state-of-the-art CMFBs. The OTA has a 70.2 dB DC gain, a 2.5 MHz GBW and a 70.8o phase margin for a 20 PF capacitive load whereas consumes only 25 μw. Finally, an 8th order Butterworth active Biquadrate RC filter has been designed and this OTA was checked by a typical switched-capacitor (SC) integrator with a 1 MHz clock-frequency.

A 0.4 V Bulk-Driven Amplifier for Low-Power Data Converter Applications

This paper presents the design of an ultra low-voltage (ULV) pseudo operational transconductance amplifier (P-OTA) that is able to operate with a single supply voltage as low as 0.4 V. The proposed circuit is based on the bulk-driven technique and use of cross-coupled self-cascode pairs that boosts the differential DC gain. The stability condition of this structure for the DC gain is considered by definition of two coefficients to cancel out a controllable percentage of the denominator. This expression for stability condition yield optimized value for the DC gain. Also, as the principle of operation of the proposed technique relies on matching conditions, Monte Carlo analyzes are considered to study of the behavior of the proposed circuit against mismatches. The designed P-OTA have a DC gain of 64 dB, 212 KHz unity gain bandwidth, 57phase margin that is loaded by 10 pF differential capacitive loads, while consume only 16 μW. Eventually, from the proposed P-OTA, a low-power Sample and Hold (S/H) circuit with sampling frequency of 10 KS/s has been designed and simulated. The correct functionality for this configuration is verified from –30℃ to 70℃. The simulated data presented is obtained using the HSPICE Environment and is valid for the 90 nm triple-well CMOS process.

Design and Analysis of a Power Efficient Linearly Tunable Cross-Coupled Transconductor Having Separate Bias Control

A common current source, generally used to bias cross-coupled differential amplifiers in a transconductor, controls third harmonic distortion (HD3) poorly. Separate current sources are shown to provide better control on HD3) . In this paper, a detailed design and analysis is presented for a transconductor made using this biasing technique. The transconductor, in addition, is made to offer high Gm, low power dissipation and is designed for linearly tunable Gm with current mode load as one of the applications. The circuit exhibits HD3) of less than –43.7 dB, high current efficiency of 1.18 V-1 and Gm of 390 μS at 1 VGp-p @ 50 MHz. UMC 0.18 μm CMOS process technology is used for simulation at supply voltage of 1.8 V.

CMOS Realization of VDVTA and OTA Based Fully Electronically Tunable First Order All Pass Filter with Optimum Linearity at Low Supply Voltage ±0.85 V

This paper presents a new first order all pass filter configurations. The proposed all pass filter configuration employs two configurations namely VDVTA and OTAs based first order all pass filter configuration. The first proposed configuration employs a single VDVTA and one grounded capacitor whereas the second proposed configuration employs two OTAs and one grounded capacitor. Both types of proposed configurations are fully electronically tunable and their quality factors do not depend on tunable pole frequency range. The reported configurations yield low active and passive sensitivities and also have low power consumption with very low supply voltage ± 0.85 V with Bias Voltage ± 0.50 V. The PSPICE simulation of the proposed VDVTA and two OTAs based first order all pass filter configurations are verified using 0.18 μm CMOS Technology Process Parameters.