This paper analyses the transient characteristics of high temperature CMOS inverters and gate circuits, and gives the computational formulas of their rise time, fall time and delay time. It may be concluded that the t...This paper analyses the transient characteristics of high temperature CMOS inverters and gate circuits, and gives the computational formulas of their rise time, fall time and delay time. It may be concluded that the transient characteristics of CMOS inverters and gate circuits deteriorate due to the reduction of carrier mobilities and threshold voltages of MOS transistors and the increase of leakage currents of MOS transistors drain terminal pn junctions. The calculation results can explain the experimental phenomenon.展开更多
Detailed analysis on transient characteristics of ECL circuits are performed in this paper, then a relatively exact propagation delay expression applied for all temperatures is presented. The cryogenic characteristics...Detailed analysis on transient characteristics of ECL circuits are performed in this paper, then a relatively exact propagation delay expression applied for all temperatures is presented. The cryogenic characteristics of some dominant parameters contributed to propagation delay are also discussed. The model achieved is suitable for optimum designs of high speed devices and circuits at all temperatures.展开更多
为了合理评估高比例新能源并网的多馈入高压直流输电(multi-infeed HVDC,MIDC)系统电压支撑能力,该文首先分析MIDC系统结构特点,随后基于多馈入短路比(multi-infeed short circuit ratio,MISCR)指标,并结合新能源短路电流幅值和相位随...为了合理评估高比例新能源并网的多馈入高压直流输电(multi-infeed HVDC,MIDC)系统电压支撑能力,该文首先分析MIDC系统结构特点,随后基于多馈入短路比(multi-infeed short circuit ratio,MISCR)指标,并结合新能源短路电流幅值和相位随机端电压变化的特性(以下简称“幅相特性”),提出多馈入暂态短路比(multi-infeed transient short circuit ratio,MITSCR)指标;其次,根据国家标准的要求分析以双馈风机(doubly-fed induction generator,DFIG)为代表的新能源在不同控制模式下的幅相特性,并通过MITSCR指标分析DFIG接入对MIDC系统节点电压支撑能力影响;最后,利用PSACD/EMTDC软件进行时域仿真分析,结果表明,MITSCR指标能有效表征节点的电压支撑能力,验证了该指标的有效性与优越性。展开更多
基金Supported by the National Native Science Foundation of China
文摘This paper analyses the transient characteristics of high temperature CMOS inverters and gate circuits, and gives the computational formulas of their rise time, fall time and delay time. It may be concluded that the transient characteristics of CMOS inverters and gate circuits deteriorate due to the reduction of carrier mobilities and threshold voltages of MOS transistors and the increase of leakage currents of MOS transistors drain terminal pn junctions. The calculation results can explain the experimental phenomenon.
文摘Detailed analysis on transient characteristics of ECL circuits are performed in this paper, then a relatively exact propagation delay expression applied for all temperatures is presented. The cryogenic characteristics of some dominant parameters contributed to propagation delay are also discussed. The model achieved is suitable for optimum designs of high speed devices and circuits at all temperatures.
