Control of Sudden Death of Entanglement by Transient Effects

We investigate the properties of entanglement between an isolated atom and a Jaynes-Cummings atom in the presence of transient effects. These effects are due to the modulation of the atom-field coupling whose explicit time-dependence is considered for the case of the linear sweep. We show that the sudden death of entanglement can be controlled by the transient effects. These effects can suppress the sudden death of entanglement in time.

TRANSIENT EFFECT OF A BOGER FLUID FLOWING AROUND A CONFINED CYLINDER

This paper is concerned with the numerical simulation of the transient effect of an inertialess Boger flow past a confined circular cylinder and the comparison of predictions with particle image velocimetry (PIV) measurements given by Shiang et al.. Dynamic simulation based on the Oldroyd-B constitutive model was carried out using a Lagrangian-Eulerian algorithm. The evolution of velocity field was obtained for the flow at two Deborah (De) numbers, i.e. De = 1.2 and 3.0. At low De, the flow reached steady state rapidly, and showed a symmetric flow regime. However, at high De, the time required to reach steady flow behind the cylinder increased significantly, and the distribution of the velocity field appears to be asymmetric with respect to the stagnation line. Fairly good agreement between the numerical results and the experimental observations is reported. It can be concluded that both the experimental measurements and the present simulations indicate that the elasticity of the polymeric flow strongly affect the flow regime of viscoelastic flow around a confined cylinder.

Analytical solution for a circular roadway considering the transient effect of excavation unloading

The rocks surrounding a roadway exhibit some special and complex phenomena with increasing depth of excavation in underground engineering.Quasi-static analysis cannot adequately explain these engineering problems.The computational model of a circular roadway considering the transient effect of excavation unloading is established for these problems.The time factor makes the solution of the problem difficult.Thus,the computational model is divided into a dynamic model and a static model.The Laplace integral transform and inverse transform are performed to solve the dynamic model and elasticity theory is used to analyze the static model.The results from an example show that circumferential stress increases and radial stress decreases with time.The stress difference becomes large gradually in this progress.The displacement increases with unloading time and decreases with the radial depth of surrounding rocks.It can be seen that the development trend of unloading and displacement is similar by comparing their rates.Finally,the results of ANSYS are used to verify the analytical solution.The contrast indicates that the laws of the two methods are basically in agreement.Thus,the analysis can provide a reference for further study.

Analyzing the transient effects of 60Co gamma rays in a CIS by Monte Carlo method

The objective of this work is to analyze the transient effects of ^60Co gamma rays in the CMOS image sensor (CIS) using the Monte Carlo method, based on Geant4. The track, energy spectrum, and angle of produced electrons when gamma rays traversed a silicon or silicon dioxide cube were calculated. A simplified model of a 500 × 500 CIS array was established, and the transient effects of gamma rays in the CIS were simulated. The raw images were captured when the CIS was irradiated by gamma rays. The experimental results were compared with the simulation results. The characteristics of the typical events induced by transient effects were analyzed.

Effect of the Transient Response in Si/Ge Parallelizing PN Junction

There are some new results about photovoltaic transient response in the new effect. We suggest a theoretical model to explain the effect reasonably. The theoretical calculation results agree with that in experiments.

Multi-Electron Effects in Attosecond Transient Absorption of CO Molecules

Using the fully propagated time-dependent Hartree–Fock method, we identify that both the dynamic core polarization and multiorbital contributions are important in the attosecond transient absorption of CO molecules.The dynamics of core electrons effectively modifies the behaviors of electrons in the highest occupied molecular orbital, resulting in the modulation of intensity and position of the absorption peaks. Depending on the alignment angles, different inner orbitals are identified to contribute, and even dominate the total absorption spectra. As a result, multi-electron fingerprints are encoded in the absorption spectra, which shed light on future applications of attosecond transient absorption in complex systems.

Simulation of continuous terahertz wave transient state thermal effects on static water

We report a numerical simulation of continuous terahertz beam induced transient thermal effects on static water. The terahertz wave used in this paper has a Gaussian beam profile. Based on the transient heat conduction equation, the finite element method （FEM） is utilized to calculate the temperature distribution. The simulation results show the dynamic process of temperature change in water during terahertz irradiation. After about 300 s, the temperature reaches a steady state with a water layer thickness of 5 mm and a beam radius of 0.25 mm. The highest temperature increase is 7 K/mW approximately. This work motivates further study on the interaction between terahertz wave and bio-tissue, which has a high water content.

NUMERICAL MODEL OF THERMAL TRANSIENT EFFECT IN FIBER OPTIC GYRO

The sensitivity of the interferometric fiber optic gyro in the presence of time varying thermal gradients plays a key role in its performance. It is well known that this sensitivity is due to the difference of index changes between the points symmetrical with respect to the middle of the coil. In order to reduce this sensitivity, different winding patterns, such as quadrupolar winding, were introduced to keep the thermal environment of the symmetrical points. In this paper, a numerical model of the transient temperature distribution in the gyro was established. The temperature gradient of the coil was solved in conjugation with the nature convection heat transfer in the aperture between the coil and the case. Effects of the winding pattern and the design of its case were investigated to optimize the design of the interferometric fiber optic gyro.

New insight into the parasitic bipolar amplification effect in single event transient production

In this paper, a new method is proposed to study the mechanism of charge collection in single event transient （SET） production in 90 nm bulk complementary metal oxide semiconductor （CMOS） technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect （bipolar effect） in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the suhstrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P＋-well layer and can be removed by a buried SO2 layer.

Transient growth in Poiseuille-Rayleigh-Bénard flows of binary fluids with Soret effect

The transient growth due to non-normMity is investigated for the Poiseuille- Rayleigh-Benard problem of binary fluids with the Soret effect. For negative separation factors such as ψ = -0.1, it is found that a large transient growth can be obtained by the non-normal interaction of the two least-stable-modes, i.e., the upstream and downstream modes, which determine the linear critical boundary curves for small Reynolds numbers. The transient growth is so strong that the optimal energy amplification factor G（t） is up to 10^2 - 10^3. While for positive separation factors such as ψ = 0.1, the transient growth is weak with the order O（I） of the amplification factor, which can even be computed by the least-stable-mode. However, for both cases, the least-stable-mode can govern the long-term behavior of the amplification factor for large time. The results also show that large Reynolds numbers have stabilization effects for the maximum amplification within moderate wave number regions. Meanwhile, much small negative or large positive separation factors and large Rayleigh numbers can enlarge the maximum transient growth of the pure streamwise disturbance with the wavenumber α= 3.14. Moreover, the initial and evolutionary two-dimensional spatial patterns of the large transient growth for the pure streamwise disturbance are exhibited with a plot of the velocity vector, spanwise vorticity, temperature, and concentration field. The initial three-layer cell vorticity struc- ture is revealed. When the amplification factor reaches the maximum Gmax, it develops into one cell structure with large amplification for the vorticity strength.

Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients

The contribution of parasitic bipolar amplification to SETs is experimentally verified using two P-hit target chains in the normal layout and in the special layout. For PMOSs in the normal layout, the single-event charge collection is composed of diffusion, drift, and the parasitic bipolar effect, while for PMOSs in the special layout, the parasitic bipolar junction transistor cannot turn on. Heavy ion experimental results show that PMOSs without parasitic bipolar amplification have a 21.4% decrease in the average SET pulse width and roughly a 40.2% reduction in the SET cross-section.

Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor

In this paper, two-dimensional （2D） transient simulations of an A1GaN/GaN high-electron-mobility transistor （HEMT） are carded out and analyzed to investigate the current collapse due to trapping effects. The coupling effect of the trapping and thermal effects are taken into account in our simulation. The turn-on pulse gate-lag transient responses with different quiescent biases are obtained, and the pulsed current-voltage （l-V） curves are extracted from the transients. The experimental results of both gate-lag transient current and pulsed I-V curves are reproduced by the simulation, and the current collapse due to the trapping effect is explained from the view of physics based on the simulation results. In addition, the results show that bulk acceptor traps can influence the gate-lag transient characteristics of A1GaN/GaN HEMTs besides surface traps and that the thermal effect can accelerate the emission of captured electrons for traps. Pulse transient simulation is meaningful in analyzing the mechanism of dynamic current collapse, and the work in this paper will benefit the reliability study and model development of GaN-based devices.

Transient Characteristics of a High-Capacity Centrifugal Pump during Rapidly Regulating Discharge Valve

In order to reveal the instantaneous characteristics of a high-capacity centrifugal pump during rapidly regulating discharge valve,theoretical analysis and numerical simulation are employed.The transient characteristics of the pump model under off-design condition were theoretically analyzed based on the generalized basic equation of vane pumps.The study showed that a centrifugal pump with radial straight blades at off-design condition almost had no transient effect,whereas a centrifugal pump with common backward-curved blades had transient effects that were directly related to the regularity of adjusting flowrate.Calculation examples show that transient effects are insignificant.The finite volume method and re-normalization group(RNG)κ-ε turbulence model were adopted to accomplish a 3D numerical calculation of a mediumspecific-speed centrifugal pump under the off-design condition.The transient process at the off-design condition is mainly caused by the time-varying intrinsic pulsation from the stator-rotor interference and by the time-varying consequent pulsation from the changes in flow rate.

Axial effect analysis of relativistic electron beam propagation in vacuum

In geostationary orbits and other quasi-vacuum environments,relativistic electron beams are affected by the initial emittance and space charge effects during the propagation process,resulting in beam quality degradation.Furthermore,axial energy distribution change in the beam and the axial transient electromagnetic effect caused by current changes in the head and tail regions of the beam also cause the beam to expand and affect its quality.In this study,the particle-in-cell method was used to construct a long-range propagation model of a relativistic electron beam in a vacuum environment.By calculating and simulating the axial energy distribution of the beam and the changes in the transient electromagnetic field,the axial effect during the propagation process was analyzed,and the parameter change law of the effective propagation of the beam was explored.This provided a theoretical reference for a more accurate assessment of the beam quality during propagation.

Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain

A comparison of the temperature dependence of the P-hit single event transient （SET） in a two-transistor （2T） inverter with that in a three-transistor （3T） inverter is carried out based on a three-dimensional numerical simulation. Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters, the temperature plays different roles in the SET production and propagation. The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases. The investigation provides a new insight into the SET mitigation under the extreme environment, where both the high temperature and the single event effects should be considered. The 3T inverter layout structure （or similar layout structures） will be a better solution for spaceborne integrated circuit design for extreme environments.

应急供水多级泵意外停机水力过渡过程瞬态特性

应急供水多级泵的意外停机会引起系统性能参数的剧烈变化,严重威胁供水安全。为了探究多级泵停机水力过渡过程内部流场的瞬态效应,该研究建立了基于叶轮转动平衡方程的泵停机过程转速预测方法,数值模拟分析了意外停机过程中多级泵内部流动特性。研究结果表明:在意外停机过程中,多级泵分别经历水泵工况、制动工况、反转工况以及飞逸工况4个阶段,转速呈现先减小至0后沿负方向增大的趋势,最后稳定在飞逸转速-4210 r/min附近;流量呈现先减小至0后沿负方向增大的趋势,然后再沿正方向增大,最终稳定在飞逸流量-14.32 kg/s附近;扭矩呈现先减小再增加,最后减小并稳定在零点附近。泵内流量和转速的大小、方向不断变化引起叶轮流道内流体的流动分离和回流,伴随着涡的形成、发展和破碎等时空演变;熵产值的变化与多级泵内不稳定流动密切相关,由湍流耗散所带来的损失起主导作用,在达到飞逸工况后湍流耗散熵产占比约65.2%,能量损失主要发生在叶轮流道内,且制动工况中内流场的损失较大;多级泵首级流道内监测点压力变化最为剧烈,各级监测点的压力脉动系数波动幅值随着级数的增加呈减小趋势;压力脉动振幅主导频率与多级泵转速呈现正相关关系,主导分量对应于叶轮流道的叶片通过频率,且沿着流体流动方向压力脉动频率振幅逐渐增大,压力脉动的频率特性可以反应出意外停机过程中流量的不稳定变化。研究成果可为应急供水系统安全稳定运行提供理论指导。

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

In this paper, we investigate the temperature and drain bias dependency of single event transient （SET） in 25-nm fin field-effect-transistor （FinFET） technology in a temperature range of 0-135 ℃ and supply voltage range of 0.4 V- 1.6 V. Technology computer-aided design （TCAD） three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135 ℃. The charge collected increases from 45.5 ℃ to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V. Furthermore, simulation results and the mechanism of temperature and bias dependency are discussed.

PIPBQ Effect Aware SER Analysis for Combinational Logic Circuits

Technology scaling results in the propagation-induced pulse broadening and quenching（PIPBQ） effect become more noticeable.In order to effectively evaluate the soft error rate for combinational logic circuits,a soft error rate analysis approach considering the PIPBQ effect is proposed.As different original pulse propagating through logic gate cells,pulse broadening and quenching are measured by HSPICE.After that,electrical effect look-up tables（EELUTs） for logic gate cells are created to evaluate the PIPBQ effect.Sensitized paths are accurately retrieved by the proposed re-convergence aware sensitized path search algorithm.Further,by propagating pulses on these paths to simulate fault injection,the PIPBQ effect on these paths can be quantified by EELUTs.As a result,the soft error rate of circuits can be effectively computed by the proposed technique.Simulation results verify the soft error rate improvement comparing with the PIPBQ-not-aware method.

Heat transfer enhancement in MOSFET mounted on different FR4 substrates by thermal transient measurement

Miniaturization of electronic package leads to high heat density and heat accumulation in electronics device, resulting in short life time and premature failure of the device. Junction temperature and thermal resistance are the critical parameters that determine the thermal management and reliability in electronics cooling. Metal oxide field effect transistor（MOSFET）is an important semiconductor device for light emitting diode-integrated circuit（LED IC） driver application, and thermal management in MOSFET is a major challenge. In this study, investigations on thermal performance of MOSFET are performed for evaluating the junction temperature and thermal resistance. Suitable modifications in FR4 substrates are proposed by introducing thermal vias and copper layer coating to improve the thermal performance of MOSFET. Experiments are conducted using thermal transient tester（T3ster） at 2.0 A input current and ambient temperature varying from25℃ to 75℃. The thermal parameters are measured for three proposed designs： FR4 with circular thermal vias, FR4 with single strip of copper layer and embedded vias, and FR4 with I-shaped copper layer, and compared with that of plain FR4 substrate. From the experimental results, FR4I-shaped shows promising results by 33.71% reduction in junction temperature and 54.19% reduction in thermal resistance. For elevated temperature, the relative increases in junction temperature and thermal resistance are lower for FR4I-shaped than those for other substrates considered. The introduction of thermal vias and copper layer plays a significant role in thermal performance.

The dual role of multiple-transistor charge sharing collection in single-event transients

As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients （SETs） due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal–oxide semiconductor field-effect transistor （PMOS FET）, but also the on-state PMOS is struck by a heavy-ion in the two-transistor inverter chain, due to the charge sharing collection and the electrical interaction. The SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by an ion striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in a three-transistor inverter in depth, and the study illustrates that the three-transistor inverter is still a better replacement for spaceborne integrated circuit design in advanced technologies.