Motion simulation and test on threshed grains in tapered threshing and transmission device for plot wheat breeding based on CFD-DEM

Mechanization of field experiments is the only way to improve crop breeding and seed propagation effects.In order to further clarify and improve the working performance of tapered threshing device for plot breeding,and reduce the remaining seeds in the device,the numerical simulation was carried out on the motion process of materials in the longitudinal-axial tapered cylinder threshing and transmission device of the plot wheat breeding combine harvester based on CFD-DEM method.Simulation results showed that,threshing and transmission of particles and short stalks at axial direction could be realized under the influence of air flow.Meanwhile,the material transference and distribution rule and stream field distribution rule of air flow in the threshing and transmission device were obtained,the variations of velocity and displacement of particles and short stalks with time were obtained;the motion trajectories and forms of particles in different types of retention were also studied.At rotating speed of 1300-1600 r/min for the tapered threshing cylinder in the verification test,the particle retention rate in the enclosure was 0-0.13%,while in the simulation the particle retention rate in the enclosure was 0-0.11%,only a 0.02%difference between them.The results proved a favorable feasibility to simulate the working performance of the tapered threshing and transmission device for plot breeding through gas-solid coupling method.

Optimum allocation of FACTS devices in Fars Regional Electric Network using genetic algorithm based goal attainment

This paper presents a novel approach to find optimum locations and capacity of flexible alternating current transmission system (FACTS) devices in a power system using a multi-objective optimization function. Thyristor controlled series compensators (TCSCs) and static var compensators (SVCs) are the utilized FACTS devices. Our objectives are active power loss reduction, newly introduced FACTS devices cost reduction, voltage deviation reduction, and increase on the robustness of the security margin against voltage collapse. The operational and controlling constraints, as well as load constraints, were considered in the optimum allocation. A goal attainment method based on the genetic algorithm (GA) was used to approach the global optimum. The estimated annual load profile was utilized in a sequential quadratic programming (SQP) optimization sub-problem to the optimum siting and sizing of FACTS devices. Fars Regional Electric Network was selected as a practical system to validate the performance and effectiveness of the proposed method. The entire investment of the FACTS devices was paid off and an additional 2.4% savings was made. The cost reduction of peak point power generation implies that power plant expansion can be postponed.

CMOS implementation of a low-power BPSK demodulator for wireless implantable neural command transmission

A new BPSK demodulator was presented.By using a clock multiplier with very simple circuit structure to replace the analog multiplier in the traditional BPSK demodulator,the circuit structure of the demodulator became simpler and hence its power consumption became lower.Simpler structure and lower power will make the designed demodulator more suitable for use in an internal single chip design for a wireless implantable neural recording system.The proposed BPSK demodulator was implemented by Global Foundries 0.35μm CMOS technology with a 3.3 V power supply.The designed chip area is only 0.07 mm;and the power consumption is 0.5 mW.The test results show that it can work correctly.

Optimization of ohmic contact for InP-based transferred electronic devices

The effect of the annealing time and annealing temperature on Ni/Ge/Au electrode contacts deposited on the n-type InP contact layer has been studied using a circular transmission line model. The minimum specific contact resistance of 3.210 7 cm2was achieved on the low-doped n-type InP contact layer with a 40 s anneal at 425 ℃. In order to improve the ohmic contact and reduce the difficulty in the fabrication of the high doped InP epi-layer, the doping concentration in the InP contact layer was chosen to be 51018cm 3in the fabrication of transferred electronic devices. Excellent differential negative resistance properties were obtained by an electron beam evaporating the Ni/Ge/Au/Ge/Ni/Au composite electrode on an InP epi-layer with a 60 s anneal at 380 ℃.