Optical and electrical properties of BaSnO_(3) and In_2O_(3) mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature

For the crystalline temperature of BaSnO_(3)(BTO)was above 650℃,the transparent conductive BTO-based films were always deposited above this temperature on epitaxy substrates by pulsed laser deposition or molecular beam epitaxy till now which limited there application in low temperature device process.In the article,the microstructure,optical and electrical of BTO and In_(2)O_(3) mixed transparent conductive BaInSnO_(x)(BITO)film deposited by filtered cathodic vacuum arc technique(FCVA)on glass substrate at room temperature were firstly reported.The BITO film with thickness of 300 nm had mainly In_(2)O_(3) polycrystalline phase,and minor polycrystalline BTO phase with(001),(011),(111),(002),(222)crystal faces which were first deposited at room temperature on amorphous glass.The transmittance was 70%–80%in the visible light region with linear refractive index of 1.94 and extinction coefficient of 0.004 at 550-nm wavelength.The basic optical properties included the real and imaginary parts,high frequency dielectric constants,the absorption coefficient,the Urbach energy,the indirect and direct band gaps,the oscillator and dispersion energies,the static refractive index and dielectric constant,the average oscillator wavelength,oscillator length strength,the linear and the third-order nonlinear optical susceptibilities,and the nonlinear refractive index were all calculated.The film was the n-type conductor with sheet resistance of 704.7Ω/□,resistivity of 0.02Ω⋅cm,mobility of 18.9 cm2/V⋅s,and carrier electron concentration of 1.6×10^(19) cm^(−3) at room temperature.The results suggested that the BITO film deposited by FCVA had potential application in transparent conductive films-based low temperature device process.

Preparation and characterization of ZnO/Cu/ZnO transparent conductive films

ZnO/Cu/ZnO transparent conductive thin films were prepared by RF sputtering deposition of ZnO target and DC sputtering deposition of Cu target on n-type （001） Si and glass substrates at room temperature. The mor- phology, structure, optical, and electrical properties of the multilayer films were characterized by field emission scanning electron microscope （FESEM）, X-ray diffraction （XRD）, UV/Vis spectrophotometer, and Hall effect mea- surement system. The influence of Cu layer thickness and the oxygen pressure in sputtering atmosphere on the film properties were studied. ZnO/Cu/ZnO transparent conduc- tive film fabricated in pure Ar atmosphere with 10 nm Cu layer thickness has the best performance： resistivity of 2.3 × 10^-4 Ω.cm, carrier concentration of 6.44 × 10^16 cm-2, mobility of 4.51 cm2.（V.s）-1, and acceptable aver- age transmittance of 80 % in the visible range. The trans- mittance and conductivity of the films fabricated with oxygen are lower than those of the films fabricated without oxygen, which indicates that oxygen atmosphere does not improve the optical and electrical properties of ZnO/Cu/ ZnO films.

Characteristics Improvement of PEDOT:PSS Transparent Conductive Film Prepared by Ink-Jet Printing

Recently, a high-performance and low-priced transparent conductive film has been expected to be developed because flexible devices produced using organic materials have been actively studied. An indium tin oxide (ITO) thin film, which has been generally used as a material for a transparent conductive film, has problems, such as fragility to bending stress and depletion of the resource. The present study used poly(3, 4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS), an organic electroconductive material, and examined the improvement in the resistance value and visible light transmittance of a transparent conductive film produced using the ink-jet method. In previous studies, we reported that, to improve the resistance value and visible light transmittance of a thin film, it was effective to clean the film substrate with ultraviolet/ozone (UV/O3) treatment, anneal the film after it was deposited on the substance, and dip the annealed film into a polar solvent. Focusing on the thin film processing between printing operations, the present study improved resistance value and visible light transmittance by examining both the application methods of a polar solvent and the annealing time between printing operations. As a result, the resistance value and visible light transmittance of a PEDOT:PSS thin film were 390.4 Ω and 86.6%, respectively. This film was obtained by applying a polar solvent and performing annealing for 30 min between printing operations. The printing was performed three times.

Flexible, Transparent and Conductive Metal Mesh Films with Ultra‑High FoM for Stretchable Heating and Electromagnetic Interference Shielding

Despite the growing demand for transparent conductive films in smart and wearable electronics for electromagnetic interference(EMI)shielding,achieving a flexible EMI shielding film,while maintaining a high transmittance remains a significant challenge.Herein,a flexible,transparent,and conductive copper(Cu)metal mesh film for EMI shielding is fabricated by self-forming crackle template method and electroplating technique.The Cu mesh film shows an ultra-low sheet resistance(0.18Ω□^(-1)),high transmittance(85.8%@550 nm),and ultra-high figure of merit(>13,000).It also has satisfactory stretchability and mechanical stability,with a resistance increases of only 1.3%after 1,000 bending cycles.As a stretchable heater(ε>30%),the saturation temperature of the film can reach over 110°C within 60 s at 1.00 V applied voltage.Moreover,the metal mesh film exhibits outstanding average EMI shielding effectiveness of 40.4 dB in the X-band at the thickness of 2.5μm.As a demonstration,it is used as a transparent window for shielding the wireless communication electromagnetic waves.Therefore,the flexible and transparent conductive Cu mesh film proposed in this work provides a promising candidate for the next-generation EMI shielding applications.

Fluorine,chlorine,and gallium co-doped zinc oxide transparent conductive films fabricated using the sol-gel spin method

Transparent conductive films(TCFs)are crucial components of solar cells.In this study,F,Cl,and Ga codoped ZnO(FCGZO)TCFs were deposited onto a glass substrate using the sol-gel spin-coating method and rapid thermal annealing.The effects of F-doping content on the structural,morphological,electrical,and optical properties of FCGZO films were examined by XRD,TEM,FE-SEM,PL spectroscopy,XPS,Hall effects testing,and UVeviseNIR spectroscopy.All prepared ZnO films exhibited a hexagonal wurtzite structure and preferentially grew along the c axis perpendicular to the substrate.Changes in the doping concentration of F changed the interplanar crystal spacing and O vacancies in the film.At a doping ratio of 2%(in mole),the F,Cl,and Ga co-doped ZnO film exhibited the best photoelectric performance,with a carrier concentration of 2.62×10^(20)cm^(-3),mobility of 14.56 cm^(2)/(V·s),and resistivity of 1.64×10^(-3)Ucm.The average transmittance(AT)in the 380-1600 nm region nearly 90%with air as the reference,and the optical band gap was 3.52 eV.

Flexible Transparent Conductive Films on the Basis of Ag Nanowires:Design and Applications:A Review

Transparent conductive films are used ubiquitously in optoelectronic devices.The properties of transparent films are extremely important for device performance,and the specifications vary according to types of devices.Over the past few years,various types of transparent conductive films on the basis of nanomaterials have emerged,and among these materials,silver nanowire networks show promising performance and represent a viable alternative to the commonly used,scarce and brittle indium tin oxide.In this paper,the working principle and the design protocol of Ag nanowire network flexible transparent conductive films are reviewed,and the applications of Ag nanowircs transparent conductive film are also briefly introduced.Concluding remarks are provided to propose future research in this field towards real-world applications.

High-performance single-wall carbon nanotube transparent conductive films

A single-wall carbon nanotube(SWCNT)has superior optical,electrical,and mechanical properties due to its unique structure and is therefore expected to be able to form flexible high-performance transparent conductive films(TCFs).However,the optoelectronic performance of these films needs to be improved to meet the requirements of many devices.The electrical resistivity of SWCNTTCFs is mainly determined by the intrinsic resistivity of individual SWCNTs and their junction resistance in networks.We analyze these key factors and focus on the optimization of SWCNTs and their networks,which include the diameter,length,crystallinity and electrical type of the SWCNTs,and the bundle size and interconnects in networks,as well as chemical doping and microgrid design.We conclude that isolated/small-bundle,heavily doped metallic or semiconducting SWCNTs with a large diameter,long length and high crystallinity are necessary to fabricate high-performance SWCNTTCFs.A simple,controllable way to construct macroscopic SWCNT networks with Y-type connections,welded junctions or microgrid design is important in achieving a low resistivity.Finally,some insights into the key challenges in the manufacture and use of SWCNT TCFs and their prospects are presented,hoping to shed light on promoting the practical application of SWCNT TCFs in future flexible and stretchable optoelectronics.

Fabrication of Flexible Transparent Conductive Films with Silver Nanowire by Vacuum Filtration and PET Mold Transfer

The flexible transparent conductive films （FrCFs） of silver nanowire-polyethylene terephthalate （AgNW- PET） were prepared by a facile method including vacuum filtration and mold transferring. The effect of silver nanowire weight density on the optical and electrical properties of films, as well as the electrical percolation was investigated. The obtained typical AgNW-PET film exhibited high figure of merit of 31.3 × 10^-3 Ω^-1 with low sheet resistance of 4.95 D sq^-1 and high transparency at 550 nm of 83.0% （excluding PET substrate）. The resulting FTCFs based on PET substrate with high transmittance and low sheet resistance have a great potential in the application of high-performance flexible electronics and photovoltaic devices.

High performance flexible metal oxide/silver nanowire based transparent conductive films by a scalable lamination-assisted solution method

Flexible MoO_(3)/silver nanowire(AgNW)/MoO_(3)/TiO_(2)/Epoxy electrodes with comparable performance to ITO were fabricated by a scalable solution-processed method with lamination assistance for transparent and conductive applications.Silver nanoparticle-based electrodes were also prepared for comparison.Using a simple spin-coating and lamination-assisted planarization method,a full solution-based approach allows preparation of AgNW-based composite electrodes at temperatures as low as 140℃.The resulting flexible AgNW-based electrodes exhibit higher transmittance of 82%at 550 nm and lower sheet resistance about 12-15Ωsq^(-1),in comparison with the values of 68%and 22-25Ωsq^(-1) separately for AgNP based electrodes.Scanning electron microscopy(SEM)and Atomic force microscopy(AFM)reveals that the multi-stacked metal-oxide layers embedded with the AgNWs possess lower surface roughness(<15 nm).The AgNW/MoO_(3) composite network could enhance the charge transport and collection efficiency by broadening the lateral conduction range due to the built of an efficient charge transport network with long-sized nanowire.In consideration of the manufacturing cost,the laminationassisted solution-processed method is cost-effective and scalable,which is desire for large-area fabrication.While in view of the materials cost and comparable performance,this AgNW-based transparent and conductive electrodes is potential as an alternative to ITO for various optoelectronic applications.

Properties of doped ZnO transparent conductive thin films deposited by RF magnetron sputtering using a series of high quality ceramic targets

To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets（ZnO：Al,ZnO：（Al,Dy）,ZnO：（Al,Gd）,ZnO：（Al,Zr）,ZnO：（Al,Nb）,and ZnO：（Al,W）） were fabricated and used to deposit thin films onto glass substrates by radio frequency（RF） magnetron sputtering.X-ray diffraction（XRD） analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the（002） plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10^-3 Ω·cm was obtained.

A Novel Method of Fabricating Flexible Transparent Conductive Large Area Graphene Film

We fabricate flexible conductive and transparent graphene films on position-emission-tomography substrates and prepare large area graphene films by graphite oxide sheets with the new technical process. The multi-layer graphene oxide sheets can be chemically reduced by HNO3 and HI to form a highly conductive graphene film on a substrate at lower temperature. The reduced graphene oxide sheets show a high conductivity sheet with resistance of 476Ω/sq and transmittance of 76% at 550nm （6 layers）. The technique used to produce the transparent conductive graphene thin film is facile, inexpensive, and can be tunable for a large area production applied for electronics or touch screens.

Effect of Oxygen Concentration and Annealing Theatment on the Optical Properties of the Transparent Conductive CdIn_2O_4 Thin Films

Transparent conductive cadmium indium oxide films (CdIn2O4) were prepared by r.f. reactive sputtering from Cd-In alloy targets under an Ar-O2 atmosphere. Electrical conductivity of the order of 105Ω-1.m-1 and the optical transmission as high as 94% are easily attained by postdeposition annealing treatment. The effects of oxygen concentration in the reactive gas mixture and post-deposition annealing treatment on the optical transmittance as well as optical parameters, such as refractive index (n), extinction coefficient (k), real part (ε') and imaginary part (ε') of the dielectric constant, were studied in the visible and near-infrared region. The highfrequency dielectric constant ε∞ the plasma frequency ωP, and the conduction band effective mass mc of different samples were also investigated

Preparation and Characterization of Transparent Conductive Zinc Doped Tin Oxide Thin Films Prepared by Radio-frequency Magnetron Sputtering

High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.

Effects of Substrate Temperature on Properties of Transparent Conductive Ta-Doped TiO_2 Films Deposited by Radio-Frequency Magnetron Sputtering

Ta-doped titanium dioxide films are deposited on fused quartz substrates using the rf magnetron sputtering technique at different substrate temperatures. After post-annealing at 550℃ in a vacuum, all the films are crystallized into the polycrystalline anatase TiO2 structure. The effects of substrate temperature from room temperature up to 350℃ on the structure, morphology, and photoelectric properties of Ta-doped titanium dioxide films are analyzed. The average transmittance in the visible region（400-800 nm） of all films is more than 73%.The resistivity decreases firstly and then increases moderately with the increasing substrate temperature. The polycrystalline film deposited at 150℃ exhibits a lowest resistivity of 7.7 × 10^-4Ω·cm with the highest carrier density of 1.1×10^21 cm^-3 and the Hall mobility of 7.4 cm^2·V^-1s^-1.

Fabrication of High-Haze Flexible Transparent Conductive PMMA Films Embedded with Silver Nanowires

High-haze flexible transparent conductive polymethyl methacrylate （PMMA） films embedded with silver nanowires （AgNWs） are fabricated by a low-cost and simple process. The volatilization rate of the solvent in PMMA solution affects the surface microstructures and morphologies, which results in different haze factors of the composite films. The areal mass density of AgNW shows a significant influence on the optical and electrical properties of composite films. The AgNW/PMMA transparent conductive films with the sheet resistance of 5.5Ω sq ^-1 exhibit an excellent performance with a high haze factor of 81.0% at 550？nm.

Effect of RF power on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering

Transparent and conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared by radio frequency （RF） msgnetron sputtering at room temperature, The RF power is varied from 75 to 150 W. At first the crystallinity and conductivity of the film are improved and then both of them show deterioration with the increase of the RF power, The lowest resistivity achieved is 2.07 × 10^-3Ωcm at an RF power of 100W with a Hall mobility of 16cm^2V^-1s^-1 and a carrier concentration of 1.95 × 10^20 cm^-3. The films obtained are polycryetalline with a hexagonal structure and a preferred orientation along the c-axis, All the films have a high transmittance of approximately 92% in the visible range. The optical band gap is about 3.33 eV for the films deposited at different RF powers.

Conduction Properties and Scattering Mechanisms in F-doped Textured Transparent Conducting SnO_2 Films Deposited by APCVD

Transparent conducting F-doped texture SnO2 films with resistivity as low as 5× 10-4 Ω ·cm,with carrier concentrations between 3.5 × 1020 and 7× 1020 cm-3 and Hall mobilities from 15.7 to 20.1 cm2/(V/s) have been prepared by atmosphere pressure chemical vapour deposition (APCVD). These polycrystalline films possess a variable preferred orientation, the polycrystallite sizes and orientations vary with substrate temperature. The substrate temperature and fluorine flow rate dependence of conductivity, Hall mobility and carrier conentration fOr the resultingfilms have been obtained. The temperature dependence of the mobiity and carrier concentrationhave been measured over a temperature range 16～400 K. A systematically theoretical analysis on scattering mechanisms for the highly conductive SnO2 films has been given. Both theoretical analysis and experimental results indicate that for these degenerate, polycrystalline SnO2 ：F films in the low temperature range (below 100 K), ionized impurity scattering is main scattering mechanism. However, when the temperature is higher than 100 K, the lattice vibration scattering becomes dominant. The grain boundary scattering makes a small contribution to limit the mobility of the films.

THE BAND STRUCTURE AND WORK FUNCTION OF TRANSPARENT CONDUCTING ALUMINUM AND MANGANESE CO-DOPED ZINC OXIDE FILMS

Al and Mn co-doped-ZnO films have been prepared at room temperature by DC reacti ve magnetron sputtering technique. The optical absorption coefficient, apparent and fundamental band gap, and work function of the films have been investigated using optical spectroscopy, band structure analyses and ultraviolet photoelectro n spectroscopy (UPS). ZnO films have direct allowed transition band structure, w hich has been confirmed by the character of the optical absorption coefficient. The apparent band gap has been found directly proportional to N2/3, showing that the effect of Burstein-Moss shift on the band gap variations dominates over the many-body effect. With only standard cleaning protocols, the work function of ZnO: (Al, Mn) and ZnO: Al films have been measured to be 4.26 and 4.21eV, respec tively. The incorporation of Mn element into the matrix of ZnO, as a relatively deep donor, can remove some electrons from the conduction band and deplete the d ensity of occupied states at the Fermi energy, which causes a loss in measured p hotoemission intensity and an increase in the surface work function. Based on th e band gap and work function results, the energy band diagram of the ZnO: (Al, M n) film near its surface is also given.

Fabrication and properties of ZAO powder,sputtering target materials and the related films

Aluminum-doped zinc oxide （ZnO：Al）, abbreviated as ZAO, is a novel and widely used transparent conductive material. The ZAO powder was synthesized by chemical coprecipitation. The ZAO ceramic sputtering target materials were fabricated by sintering in air, and ZAO transparent conductive films were prepared by RF magnetron sputtering on glass substrates. XRD proved that such films had an orientation of （002） crystal panel paralleled to the surface of the glass substrate. The average transmittance of the films in the visible region exceeded 80%.

Electrical and optical properties of deep ultraviolet transparent conductive Ga_2O_3/ITO films by magnetron sputtering

Ga2O3/ITO films were prepared by magnetron sputtering on quartz glass substrates. The transmittance and sheet resistance of ITO films and Ga2O3/ITO films were measured by using a double beam spectrophotometer and four point probes. The effect of the ITO layer and Ga2O3 layer thickness on the electrical and optical properties of Ga2O3/ITO hi-layer films were investigated in detail. Ga2O3 （50 nm）/ITO （23 nm） films exhibited a low sheet resistance of 323 Ω/□ and high deep ultraviolet transmittance of 77.6% at a wavelength of 280 nm. The ITO layer controls the ultraviolet transmittance and sheet resistance of Ga2O3/ITO films. The Ga2O3 layer thickness has a marked effect on the transmission spectral shape of Ga2O3/ITO films in the violet spectral region.